TWO LEVEL LIGHTING BALLAST
    21.
    发明申请
    TWO LEVEL LIGHTING BALLAST 有权
    两级照明灯

    公开(公告)号:US20120206059A1

    公开(公告)日:2012-08-16

    申请号:US13024443

    申请日:2011-02-10

    CPC classification number: H05B41/2827 H02M7/53832 H05B41/42 Y02B20/185

    Abstract: A two level lighting ballast is provided, which includes a self-oscillating inverter circuit and a control circuit. The inverter includes an input; an output to selectively provide current to energize a lamp; a switching circuit operating at a switching frequency; a feedback transformer; and an impedance component. The feedback transformer is connected to the output, and drives the switching circuit based on the lamp current. The impedance component is connected in parallel with the feedback transformer, and is operated by the control circuit. When the control circuit enables the impedance component, the switching circuit operates in a first frequency range, and a first lamp current is provided. When the control circuit disables the impedance component, the switching circuit operates in a second frequency range, and a second lamp current is provided. The first frequency range is lower than the second, and the first lamp current is greater than the second.

    Abstract translation: 提供了两级照明镇流器,其包括自振荡逆变器电路和控制电路。 逆变器包括一个输入端; 输出以选择性地提供电流以激励灯; 以开关频率工作的开关电路; 反馈变压器; 和阻抗分量。 反馈变压器连接到输出,并根据灯电流驱动开关电路。 阻抗元件与反馈变压器并联,由控制电路工作。 当控制电路使能阻抗分量时,开关电路在第一频率范围内工作,并提供第一灯电流。 当控制电路禁止阻抗分量时,开关电路在第二频率范围内工作,并提供第二灯电流。 第一个频率范围低于第二个频率范围,第一个灯电流大于第二个。

    METHODS FOR FORMING RESISTIVE SWITCHING MEMORY ELEMENTS
    22.
    发明申请
    METHODS FOR FORMING RESISTIVE SWITCHING MEMORY ELEMENTS 有权
    形成电阻式开关记忆元件的方法

    公开(公告)号:US20110201149A1

    公开(公告)日:2011-08-18

    申请号:US13096719

    申请日:2011-04-28

    Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

    Abstract translation: 提供电阻式开关存储器元件,其可以包含由无电金属形成的化学金属电极和金属氧化物。 电阻式开关存储器元件可以表现出双稳态,并且可以用于高密度多层存储器集成电路中。 诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。 无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。 可以沉积多层导电材料,每层具有不同的氧化速率。 可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。

    Methods for forming resistive switching memory elements
    23.
    发明授权
    Methods for forming resistive switching memory elements 有权
    形成电阻式开关存储元件的方法

    公开(公告)号:US07972897B2

    公开(公告)日:2011-07-05

    申请号:US11702966

    申请日:2007-02-05

    Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

    Abstract translation: 提供电阻式开关存储器元件,其可以包含由无电金属形成的化学金属电极和金属氧化物。 电阻式开关存储器元件可以表现出双稳态,并且可以用于高密度多层存储器集成电路中。 诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。 无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。 可以沉积多层导电材料,每层具有不同的氧化速率。 可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。

    RESTART CIRCUIT FOR MULTIPLE LAMP ELECTRONIC BALLAST
    25.
    发明申请
    RESTART CIRCUIT FOR MULTIPLE LAMP ELECTRONIC BALLAST 有权
    多灯电子镇流器的重启电路

    公开(公告)号:US20100301759A1

    公开(公告)日:2010-12-02

    申请号:US12474141

    申请日:2009-05-28

    Abstract: A restart circuit for causing an electronic ballast to perform a restart in response to reconnecting any lamp of a multiple lamp configuration of the electronic ballast to the electronic ballast is disclosed. The electronic ballast includes a filament health check circuit for providing a first current through a monitored filament of the lamps to a controller of the ballast. The controller restarts the electronic ballast when a determined ratio of the first current to a reference current indicates that the monitored filament has been disconnected or broken (i.e., the first current substantially decreases) and is subsequently replaced or reconnected to the ballast (i.e., the first current returns to a predetermined level). The ballast further comprises a dv/dt circuit for reducing the first current for a transient time period in response to reconnecting a filament other than the monitored filament to the ballast, causing the controller to restart the ballast.

    Abstract translation: 公开了一种用于使电子镇流器响应于将电子镇流器的多灯配置的任何灯重新连接到电子镇流器而进行重启的重启电路。 电子镇流器包括灯丝健康检查电路,用于通过所监视的灯的灯丝将第一电流提供到镇流器的控制器。 当第一电流与参考电流的确定比率指示所监测的灯丝已经断开或断开(即,第一电流基本上减小)并且随后被替换或重新连接到镇流器时,控制器重新启动电子镇流器(即, 第一电流返回到预定水平)。 镇流器还包括dv / dt电路,用于响应于除了被监测的灯丝之外的灯丝重新连接到镇流器而使第一电流减小一个瞬时时间段,导致控制器重新启动镇流器。

    Forwarding packets using next-hop information
    26.
    发明授权
    Forwarding packets using next-hop information 有权
    使用下一跳信息转发数据包

    公开(公告)号:US07680117B1

    公开(公告)日:2010-03-16

    申请号:US11694738

    申请日:2007-03-30

    CPC classification number: H04L45/00 H04L45/38 H04L45/54

    Abstract: A method may include receiving a packet associated with a flow of packets, the packet including a destination address; selecting one of a plurality of memory banks, the selected memory bank being associated with the flow of packets, wherein each of the plurality of memory banks stores the same next-hop information for forwarding the packet to the destination address; accessing, in the selected memory bank, the next-hop information for forwarding the packet to the destination address; and forwarding the packet to the destination address based on the next-hop information.

    Abstract translation: 方法可以包括接收与分组流相关联的分组,所述分组包括目的地地址; 选择多个存储体之一,所选择的存储体与分组流相关联,其中多个存储体中的每一个存储用于将分组转发到目的地地址的相同的下一跳信息; 在所选择的存储体中访问用于将分组转发到目的地地址的下一跳信息; 并根据下一跳信息将报文转发到目的地址。

    Methods for forming nonvolatile memory elements with resistive-switching metal oxides
    27.
    发明授权
    Methods for forming nonvolatile memory elements with resistive-switching metal oxides 有权
    用电阻式开关金属氧化物形成非易失性存储元件的方法

    公开(公告)号:US07629198B2

    公开(公告)日:2009-12-08

    申请号:US11714334

    申请日:2007-03-05

    Abstract: Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.

    Abstract translation: 提供具有电阻开关金属氧化物的非易失性存储元件。 非易失性存储元件可以通过将含金属的材料沉积在含硅材料上而形成。 含金属材料可以被氧化以形成电阻式开关金属氧化物。 当施加热量时,含硅材料中的硅与含金属材料中的金属反应。 这形成用于非易失性存储元件的金属硅化物下电极。 上部电极可以沉积在金属氧化物的顶部。 由于含硅层中的硅与含金属层中的一些金属反应,与由相同金属形成的化学计量的金属氧化物相比,形成的电阻 - 开关金属氧化物是金属缺陷的。

    METHOD AND SYSTEM FOR ELIMINATING DC BIAS ON ELECTROLYTIC CAPACITORS AND SHUTDOWN DETECTING CIRCUIT FOR CURRENT FED BALLAST
    28.
    发明申请
    METHOD AND SYSTEM FOR ELIMINATING DC BIAS ON ELECTROLYTIC CAPACITORS AND SHUTDOWN DETECTING CIRCUIT FOR CURRENT FED BALLAST 失效
    用于消除电流电容器直流偏置的方法和系统以及用于电流放电的关断检测电路

    公开(公告)号:US20090115340A1

    公开(公告)日:2009-05-07

    申请号:US11934943

    申请日:2007-11-05

    CPC classification number: H05B41/2856 H05B41/2827

    Abstract: A system and method is provided that eliminates DC bias on at least one of a first electrolytic capacitor and a second electrolytic capacitor of a bipolar junction transistor (BJT) based inverter ballast having a shutdown control circuit in association with only one of at least two BJT switches. A duty cycle dependent capacitor is connected in a series with a bus of the ballast, and a resonant circuit, including primary winding of the output transformer and a resonant capacitor. A balancing/charging resistor is connected at one end between the first electrolytic capacitor and the second electrolytic capacitor, and at another end to the duty cycle dependent capacitor and the resonant circuit.

    Abstract translation: 提供了一种系统和方法,其消除了具有关闭控制电路的双极结型晶体管(BJT)型逆变器镇流器的第一电解电容器和第二电解电容器中的至少一个上的DC偏压,仅与至少两个BJT 开关。 与占空比相关的电容器与镇流器的总线串联连接,并且包括谐振电路,包括输出变压器的初级绕组和谐振电容器。 平衡/充电电阻器一端连接在第一电解电容器和第二电解电容器之间,另一端连接到占空比相关电容器和谐振电路。

    Rotating identifications in light-based positioning systems

    公开(公告)号:US10117316B1

    公开(公告)日:2018-10-30

    申请号:US15783237

    申请日:2017-10-13

    Abstract: Various embodiments disclosed herein include a light-based communication system. The system includes a plurality of luminaires, in which each of the plurality of luminaires is configured to transmit light-based communication (LCom) signals, and a server communicatively coupled to the plurality of luminaires. The server is configured to assign an identifier to each of the plurality of luminaires, transmit the assigned identifier to each of the plurality of luminaires, in which each of the plurality of luminaires transmits the assigned identifier via LCom signals, rotate, in response to receiving a trigger signal, the assigned identifier for each of the plurality of luminaires, and transmit the rotated identifier to each of the plurality of luminaires, in which each of the plurality of luminaires transmits the rotated identifier via LCom signals.

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