Abstract:
A two level lighting ballast is provided, which includes a self-oscillating inverter circuit and a control circuit. The inverter includes an input; an output to selectively provide current to energize a lamp; a switching circuit operating at a switching frequency; a feedback transformer; and an impedance component. The feedback transformer is connected to the output, and drives the switching circuit based on the lamp current. The impedance component is connected in parallel with the feedback transformer, and is operated by the control circuit. When the control circuit enables the impedance component, the switching circuit operates in a first frequency range, and a first lamp current is provided. When the control circuit disables the impedance component, the switching circuit operates in a second frequency range, and a second lamp current is provided. The first frequency range is lower than the second, and the first lamp current is greater than the second.
Abstract:
Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.
Abstract:
Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.
Abstract:
Embodiments of the current invention describe a high performance combinatorial method and apparatus for the combinatorial development of coatings by a dip-coating process. The dip-coating process may be used for multiple applications, including forming coatings from varied sol-gel formulations, coating substrates uniformly with particles to combinatorially test particle removal formulations, and the dipping of substrates into texturing formulations to combinatorially develop the texturing formulations.
Abstract:
A restart circuit for causing an electronic ballast to perform a restart in response to reconnecting any lamp of a multiple lamp configuration of the electronic ballast to the electronic ballast is disclosed. The electronic ballast includes a filament health check circuit for providing a first current through a monitored filament of the lamps to a controller of the ballast. The controller restarts the electronic ballast when a determined ratio of the first current to a reference current indicates that the monitored filament has been disconnected or broken (i.e., the first current substantially decreases) and is subsequently replaced or reconnected to the ballast (i.e., the first current returns to a predetermined level). The ballast further comprises a dv/dt circuit for reducing the first current for a transient time period in response to reconnecting a filament other than the monitored filament to the ballast, causing the controller to restart the ballast.
Abstract:
A method may include receiving a packet associated with a flow of packets, the packet including a destination address; selecting one of a plurality of memory banks, the selected memory bank being associated with the flow of packets, wherein each of the plurality of memory banks stores the same next-hop information for forwarding the packet to the destination address; accessing, in the selected memory bank, the next-hop information for forwarding the packet to the destination address; and forwarding the packet to the destination address based on the next-hop information.
Abstract:
Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.
Abstract:
A system and method is provided that eliminates DC bias on at least one of a first electrolytic capacitor and a second electrolytic capacitor of a bipolar junction transistor (BJT) based inverter ballast having a shutdown control circuit in association with only one of at least two BJT switches. A duty cycle dependent capacitor is connected in a series with a bus of the ballast, and a resonant circuit, including primary winding of the output transformer and a resonant capacitor. A balancing/charging resistor is connected at one end between the first electrolytic capacitor and the second electrolytic capacitor, and at another end to the duty cycle dependent capacitor and the resonant circuit.
Abstract:
Various embodiments disclosed herein include a light-based communication system. The system includes a plurality of luminaires, in which each of the plurality of luminaires is configured to transmit light-based communication (LCom) signals, and a server communicatively coupled to the plurality of luminaires. The server is configured to assign an identifier to each of the plurality of luminaires, transmit the assigned identifier to each of the plurality of luminaires, in which each of the plurality of luminaires transmits the assigned identifier via LCom signals, rotate, in response to receiving a trigger signal, the assigned identifier for each of the plurality of luminaires, and transmit the rotated identifier to each of the plurality of luminaires, in which each of the plurality of luminaires transmits the rotated identifier via LCom signals.
Abstract:
A driver port that provides selectable output currents based on connections thereto, and a driver including the same, is provided. A plurality of shunt resistors are connected in series between a negative output of a driver and a ground. A driver port having a plurality of connection points is provided, each respective connection point connected to a different connection between two of the plurality of shunt resistors. A load including one or more solid state light sources is capable of being connected between one of the connection points of the driver port and a positive output of the driver.