利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

188 条记录 (耗时 0.025 秒)

    APPARATUS FOR MEASURING TRANSMITTANCE OF COVER GLASS FOR PHOTOVOLTAIC CELL
    21.
    发明申请
    APPARATUS FOR MEASURING TRANSMITTANCE OF COVER GLASS FOR PHOTOVOLTAIC CELL 有权
    用于测量光伏玻璃的透射度的装置

    公开(公告)号：US20130222804A1

    公开(公告)日：2013-08-29

    申请号：US13742734

    申请日：2013-01-16

    申请人： SAMSUNG CORNING PRECISION MATERIALS CO., LTD.

    发明人： Misun KIM ,  Taeho KEEM ,  Hyun Woo KIM ,  Taekmin KWON ,  Shio SEONG

    IPC分类号： G01N21/59

    CPC分类号： G01N21/59 ,  G01N21/958

    摘要： An apparatus for measuring the transmittance of a piece of cover glass for a photovoltaic cell which can measure an accurate transmittance irrespective of whether or not the cover glass has a pattern and irrespective of the shape of the pattern. The apparatus includes a light source part disposed in front of the piece of cover glass. The light source part directs light into the piece of cover glass. A detector is disposed in the rear of the piece of cover glass, and detects light that has been directed into the piece of cover glass and then has passed through the piece of cover glass. The detector is disposed within a range where the intensity of the light that has passed through the piece of cover glass is uniform.

    摘要翻译： 一种用于测量一块太阳能电池的玻璃罩的透射率的装置，其可以测量准确的透射率，而不管盖玻璃是否具有图案，而与图案的形状无关。 该装置包括设置在该盖玻片前方的光源部。 光源部分将光引导到玻璃片中。 检测器设置在玻璃片的后部，并且检测已经被导入到玻璃片中并且然后已经穿过该玻璃盖的光。 检测器设置在通过该盖玻片的光的强度均匀的范围内。

    ZINC OXIDE PRECURSOR AND METHOD OF DEPOSITING ZINC OXIDE-BASED THIN FILM USING THE SAME
    24.
    发明申请
    ZINC OXIDE PRECURSOR AND METHOD OF DEPOSITING ZINC OXIDE-BASED THIN FILM USING THE SAME 有权
    氧化锌前驱体和使用其形成基于氧化锌的薄膜的方法

    公开(公告)号：US20130171341A1

    公开(公告)日：2013-07-04

    申请号：US13681191

    申请日：2012-11-19

    申请人： Samsung Corning Precision Materials Co., Ltd

    发明人： Sooho Park ,  Seohyun Kim ,  Jeongwoo Park ,  Taejung Park ,  YoungZo Yoo ,  GunSang Yoon ,  Eun-Ho Choi ,  Myong Woon Kim ,  Bogyeong Kim ,  Hyung Soo Shin ,  Seung Ho Yoo ,  Sang Do Lee ,  Sang Ick Lee ,  Sang Jun Yim

    IPC分类号： C07F3/06

    CPC分类号： C07F3/06 ,  C07F17/00 ,  C23C16/407

    摘要： A zinc oxide precursor for use in deposition of a zinc oxide-based thin film contains a zincocene having the following formula or a derivative thereof: where R1 and R2 are hydrogen or CnH2n+1. The n is a number selected from 1 to 3, and the R1 and R2 is one selected from the group consisting of hydrogen, a methyl group, an ethyl group and an i-propyl group. A method of depositing a zinc oxide-based thin film includes the following steps of: loading a substrate into a deposition chamber; and supplying the above-described zinc oxide precursor and an oxidizer into the deposition chamber and forming a zinc oxide-based thin film on the substrate via chemical vapor deposition. In an exemplary embodiment, the zinc oxide-based thin film may be formed on the substrate via atmospheric pressure chemical vapor deposition.

    摘要翻译： 用于沉积氧化锌基薄膜的氧化锌前体含有具有下式的一种或多种其衍生物：其中R 1和R 2是氢或C n H 2n + 1。 n为选自1至3的数，R1和R2为选自氢，甲基，乙基和异丙基的一个。 沉积氧化锌基薄膜的方法包括以下步骤：将基底装载到沉积室中; 并将上述氧化锌前体和氧化剂供给到沉积室中，并通过化学气相沉积在衬底上形成氧化锌基薄膜。 在一个示例性实施例中，氧化锌基薄膜可以通过大气压化学气相沉积在基板上形成。

    METHOD OF MANUFACTURING FREE-STANDING GALLIUM NITRIDE SUBSTRATE
    26.
    发明申请
    METHOD OF MANUFACTURING FREE-STANDING GALLIUM NITRIDE SUBSTRATE 审中-公开
    自由置换氮化镓衬底的制备方法

    公开(公告)号：US20130034951A1

    公开(公告)日：2013-02-07

    申请号：US13559310

    申请日：2012-07-26

    申请人： JunSung Choi ,  Bongmo Park ,  Kwangje Woo ,  Joon Hoi Kim ,  Cheolmin Park

    发明人： JunSung Choi ,  Bongmo Park ,  Kwangje Woo ,  Joon Hoi Kim ,  Cheolmin Park

    IPC分类号： H01L21/20

    CPC分类号： C04B35/58 ,  C04B41/009 ,  C04B41/5062 ,  C04B41/87 ,  C04B2111/0025 ,  C04B2111/00844 ,  C04B2235/3852 ,  C30B25/02 ,  C30B25/20 ,  C30B29/406 ,  H01L33/0075 ,  C04B41/4531

    摘要： A method of manufacturing a free-standing gallium nitride (GaN) substrate, by which a free-standing GaN substrate can be manufactured without warping or cracks. The method includes the steps of collecting polycrystalline GaN powder that is deposited in a reactor or on a susceptor in a process of growing single crystalline GaN, loading the collected polycrystalline GaN powder into a forming mold, preparing a polycrystalline GaN substrate by sintering the loaded polycrystalline GaN powder, and forming a single crystalline GaN layer by growing single crystalline GaN over the polycrystalline GaN substrate. It is possible to reduce warping and cracks that are caused, due to the difference in the coefficient of thermal expansion, during the growth or cooling of single crystalline GaN in the process of manufacturing the free-standing GaN substrate.

    摘要翻译： 制造自立式氮化镓（GaN）衬底的方法，通过该方法可以制造独立的GaN衬底而没有翘曲或裂纹。 该方法包括在生长单晶GaN的过程中收集沉积在反应器或基座上的多晶GaN粉末的步骤，将收集的多晶GaN粉末加载到成型模具中，通过烧结加载的多晶 GaN粉末，并通过在多晶GaN衬底上生长单晶GaN而形成单晶GaN层。 在制造独立的GaN衬底的过程中，可以减少在单晶GaN的生长或冷却期间由于热膨胀系数的差异而引起的翘曲和裂纹。

    Display Device
    27.
    发明申请
    Display Device 审中-公开
    显示设备

    公开(公告)号：US20120307191A1

    公开(公告)日：2012-12-06

    申请号：US13482135

    申请日：2012-05-29

    申请人： Seong-Sik Park ,  Euisoo Kim ,  Joosok Kim ,  You min Shin ,  Jinhoon Lee ,  EunYoung Cho

    发明人： Seong-Sik Park ,  Euisoo Kim ,  Joosok Kim ,  You min Shin ,  Jinhoon Lee ,  EunYoung Cho

    IPC分类号： G02F1/1343

    CPC分类号： G02F1/133526 ,  G02B3/0037 ,  G02B5/0236 ,  G02B5/0294 ,  G02F1/133504 ,  G02F2001/133562 ,  H01L51/5275

    摘要： A display device that can reduce color shift and prevent the quality of an image from degrading due to moiré. The display device includes a display panel and an optical film, which includes a background layer disposed in front of the display panel, and a lens section formed on the background layer. Patterns of the lens section is spaced apart from each other to diffuse incident light. The spacing τ and pitch T of the patterns are determined by the following m value in the following formulae. I max - I min I max + I min ≈  2  sin  ( π · k · p / P ) ( π · k · p / P )  sin  ( π · m · p / P ) ( π · m · p / P )  ≤ 0.01 k = τ / T p / P m = P / T p/P is an aperture ratio of sub-pixels of the display panel, τ/T is an aperture ratio of the lens section, I is an intensity of light exiting the optical film after being diffused through the sub-pixels, P and p are a pitch and a width of the sub-pixels, T is a pitch of the patterns, and τ=T−W.

    摘要翻译： 可以减少颜色偏移并防止图像质量下降的显示设备。 显示装置包括显示面板和光学膜，其包括设置在显示面板前方的背景层和形成在背景层上的透镜部。 透镜部分的图案彼此间隔开以扩散入射光。 图案的间隔τ和间距T由以下公式中的以下m值决定。 （＆pgr。·k·p / P）（＆pgr。·m·p / P）（＆pgr··p·P） ＆pgr;·m·p / P）骸≤0.01 k =τ/ T p / P m = P / T p / P是显示面板的子像素的开口率，τ/ T是 透镜部分，I是在通过子像素扩散之后离开光学膜的光的强度，P和p是子像素的间距和宽度，T是图案的间距，τ= T- W.

    ZnO-BASED TRANSPARENT CONDUCTIVE THIN FILM FOR PHOTOVOLTAIC CELL AND MANUFACTURING METHOD THEREOF
    28.
    发明申请
    ZnO-BASED TRANSPARENT CONDUCTIVE THIN FILM FOR PHOTOVOLTAIC CELL AND MANUFACTURING METHOD THEREOF 审中-公开
    用于光伏电池的基于ZnO的透明导电薄膜及其制造方法

    公开(公告)号：US20120270013A1

    公开(公告)日：2012-10-25

    申请号：US13449689

    申请日：2012-04-18

    申请人： Seo Hyun Kim ,  Young Zo Yoo ,  Gun Sang Yoon ,  Eun-Ho Choi ,  Taejung Park

    发明人： Seo Hyun Kim ,  Young Zo Yoo ,  Gun Sang Yoon ,  Eun-Ho Choi ,  Taejung Park

    IPC分类号： H01B1/08 ,  C23C16/40

    CPC分类号： H01L31/1884 ,  H01L31/022483 ,  Y02E10/50 ,  Y10T428/24355

    摘要： A zinc oxide (ZnO)-based transparent conductive thin film for a photovoltaic cell and a manufacturing method thereof, in which the transparent conductive thin film has an excellent textured surface and can be mass-produced. The ZnO-based transparent conductive film is formed on a substrate, is doped with a dopant, and has a textured surface. The textured surface has a plurality of protrusions. The manufacturing method forms the zinc oxide-based transparent conductive film on a substrate by atmospheric pressure chemical vapor deposition (APCVD) involving organic precursor gas and oxidizer gas.

    摘要翻译： 一种用于光伏电池的基于氧化锌（ZnO）的透明导电薄膜及其制造方法，其中透明导电薄膜具有优异的纹理表面并且可以批量生产。 ZnO基透明导电膜形成在基板上，掺杂有掺杂剂并具有纹理表面。 纹理表面具有多个突起。 制造方法通过涉及有机前体气体和氧化剂气体的大气压化学气相沉积（APCVD）在基板上形成氧化锌基透明导电膜。