利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

286 条记录 (耗时 0.041 秒)

    CARBON NANOTUBE TRANSISTOR HAVING LOW FRINGE CAPACITANCE AND LOW CHANNEL RESISTANCE
    22.
    发明申请
    CARBON NANOTUBE TRANSISTOR HAVING LOW FRINGE CAPACITANCE AND LOW CHANNEL RESISTANCE 审中-公开
    具有低FREE电容和低通道电阻的碳纳米管晶体管

    公开(公告)号：US20080173864A1

    公开(公告)日：2008-07-24

    申请号：US11625307

    申请日：2007-01-20

    申请人： Shinobu Fujita ,  Bipul C. Paul

    发明人： Shinobu Fujita ,  Bipul C. Paul

    IPC分类号： H01L51/30

    CPC分类号： H01L51/0541 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/17 ,  H01L51/0048 ,  H01L51/055 ,  H01L51/105

    摘要： A CNT transistor has source extension 36a and drain extension 36b that shunt electrical current and reduce the effective CNT resistance and allow significant reductions in fringe capacitances 28 30. The extensions 36a 36b are electrically conductive, and are electrically connected to the source electrode 22 and drain electrode 24. The extensions each span a portion of gaps 35a 35b. Consequently, the source and drain can be located relatively far from the gate electrode 26, thereby reducing the fringe capacitances 28 30. Nanotube 20 is a semiconducting single-walled carbon nanotube, and the extensions 36a 36b comprise metallic-conducting nanotubes surrounding and coaxial with the nanotube 20. The nanotube 20 and extensions 36a 36b are fabricated from a multiwalled nanotube by selectively removing outer nanotubes in a region near the gate electrode. Alternatively, the extensions 36a 36b can comprise metal deposited on peripheral portions of the semiconducting CNT 20.

    摘要翻译： CNT晶体管具有源极延伸部分36a和漏极延伸部分36b，其分流电流并且降低有效的CNT电阻并允许边缘电容28 30的显着降低。 延伸部36,36b是导电的，并且电连接到源电极22和漏电极24。 延伸部分跨越间隙35a 35b的一部分。 因此，源极和漏极可以位于相对远离栅电极26的位置，从而减小边缘电容28 30。 纳米管20是半导体单壁碳纳米管，并且延伸部36a 36b包括与纳米管20包围并与纳米管20同轴的金属导电纳米管。 纳米管20和延伸部36a 36b由多壁纳米管制造，通过选择性地去除栅电极附近的区域中的外部纳米管。 或者，延伸部分36a 36b可以包括沉积在半导体CNT 20的周边部分上的金属。

    Random access memory including nanotube switching elements
    23.
    发明申请
    Random access memory including nanotube switching elements 有权
    随机存取存储器包括纳米管开关元件

    公开(公告)号：US20080062744A1

    公开(公告)日：2008-03-13

    申请号：US11879352

    申请日：2007-07-17

    申请人： CLaude Bertin ,  Thomas Rueckes ,  Brent Segal

    发明人： CLaude Bertin ,  Thomas Rueckes ,  Brent Segal

    IPC分类号： G11C11/00

    CPC分类号： G11C11/412 ,  B82Y10/00 ,  G11C13/025 ,  G11C14/00 ,  G11C23/00 ,  G11C2213/17 ,  H01H1/0094 ,  H01H1/027 ,  H01L27/28 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/73 ,  H01L29/78 ,  H01L51/0048 ,  H01L51/0508 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/943 ,  Y10T29/49002

    摘要： Random access memory including nanotube switching elements. A memory cell includes first and second nanotube switching elements and an electronic memory. Each nanotube switching element includes conductive terminals, a nanotube article and control circuitry capable of controllably form and unform an electrically conductive channel between the conductive terminals. The electronic memory is a volatile storage device capable of storing a logic state in response to electrical stimulus. In certain embodiment the electronic memory has cross-coupled first and second inverters in electrical communication with the first and second nanotube switching elements. The cell can operate as a normal electronic memory, or can operate in a shadow memory or store mode (e.g., when power is interrupted) to transfer the electronic memory state to the nanotube switching elements. The device may later be operated in a recall mode where the state of the nanotube switching elements may be transferred to the electronic memory.

    摘要翻译： 随机存取存储器包括纳米管开关元件。 存储单元包括第一和第二纳米管切换元件和电子存储器。 每个纳米管切换元件包括导电端子，纳米管制品和能够可控地形成和取消导电端子之间的导电通道的控制电路。 电子存储器是能够响应于电刺激而存储逻辑状态的易失性存储装置。 在某些实施例中，电子存储器具有与第一和第二纳米管切换元件电连通的交叉耦合的第一和第二反相器。 电池可以作为普通电子存储器工作，或者可以在阴影存储器或存储模式（例如，当电力中断时）操作以将电子存储器状态传送到纳米管开关元件。 该装置可以稍后在调谐模式下操作，其中纳米管切换元件的状态可以被传送到电子存储器。

    Nanotube-based switching elements with multiple controls
    25.
    发明授权
    Nanotube-based switching elements with multiple controls 有权
    基于纳米管的开关元件具有多个控制

    公开(公告)号：US07339401B2

    公开(公告)日：2008-03-04

    申请号：US11197196

    申请日：2005-08-04

    申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

    发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

    IPC分类号： H03K19/20

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/17 ,  H01H1/0094 ,  H01H1/027 ,  H01L27/28 ,  H01L29/0673 ,  H01L29/73 ,  H01L29/78 ,  H01L51/0048 ,  H01L51/0508 ,  Y10S977/708 ,  Y10S977/932 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/94 ,  Y10S977/943

    摘要： Nanotube-based switching elements with multiple controls and circuits made from such. A switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. The control structure includes a control electrode and a release electrode, disposed on opposite sides of the nanotube channel element. The control and release may be used to form a differential input, or if the device is constructed appropriately to operate the circuit in a non-volatile manner. The switching elements may be arranged into logic circuits and latches having differential inputs and/or non-volatile behavior depending on the construction.

    摘要翻译： 基于纳米管的开关元件具有由此制成的多个控制和电路。 开关元件包括输入节点，输出节点和具有至少一个导电纳米管的纳米管通道元件。 相对于纳米管通道元件设置控制结构，以可控地形成和取消所述输入节点和所述输出节点之间的导电通道。 输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。 控制结构包括设置在纳米管通道元件的相对侧上的控制电极和释放电极。 控制和释放可用于形成差分输入，或者如果该装置被适当地构造以以非易失性方式操作电路。 根据结构，开关元件可以被布置成具有差分输入和/或非易失性行为的逻辑电路和锁存器。

    Receiver circuit using nanotube-based switches and transistors
    26.
    发明授权
    Receiver circuit using nanotube-based switches and transistors 有权
    使用基于纳米管的开关和晶体管的接收器电路

    公开(公告)号：US07329931B2

    公开(公告)日：2008-02-12

    申请号：US11033213

    申请日：2005-01-10

    申请人： Claude L. Bertin

    发明人： Claude L. Bertin

    IPC分类号： H01L27/14 ,  B82B1/00

    CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C23/00 ,  G11C2213/17 ,  H01L51/0048 ,  H01L51/0591 ,  Y10S977/70

    摘要： Receiver circuits using nanotube-based switches and transistors. A receiver circuit includes a differential input having a first and second input link, a differential output having a first and second output link, and first and second switching elements in electrical communication with the input links and the output links. Each switching element has an input node, an output node, a nanotube channel element, and a control structure disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node. First and second MOS transistors are each in electrical communication with a reference signal and with the output node of a corresponding one of the first and second switching elements.

    摘要翻译： 使用基于纳米管的开关和晶体管的接收器电路。 接收器电路包括具有第一和第二输入链路的差分输入，具有第一和第二输出链路的差分输出以及与输入链路和输出链路电连通的第一和第二开关元件。 每个开关元件具有输入节点，输出节点，纳米管通道元件和相对于纳米管通道元件设置的控制结构，以在所述输入节点和所述输出节点之间可控制地形成和取消导电通道。 第一和第二MOS晶体管各自与参考信号电连通，并且与第一和第二开关元件中相应的一个的输出节点电连通。

    Crossbar-array designs and wire addressing methods that tolerate misalignment of electrical components at wire overlap points
    27.
    发明申请
    Crossbar-array designs and wire addressing methods that tolerate misalignment of electrical components at wire overlap points 有权
    横线阵列设计和线寻址方法，可以容忍电线重叠点处的电气元件的未对准

    公开(公告)号：US20080032233A1

    公开(公告)日：2008-02-07

    申请号：US11906886

    申请日：2007-10-03

    申请人： Wei Wu ,  Philip Kuekes ,  R. Williams

    发明人： Wei Wu ,  Philip Kuekes ,  R. Williams

    IPC分类号： G03C5/00

    CPC分类号： G11C13/025 ,  B82Y10/00 ,  B82Y30/00 ,  G11C2213/16 ,  G11C2213/17 ,  H01L21/76838 ,  H01L23/53271 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10S977/721 ,  Y10S977/742 ,  H01L2924/00

    摘要： Various embodiments of the present invention are directed to crossbar array designs that interfaces wires to address wires, despite misalignments between electrical components and wires. In one embodiment, a nanoscale device may be composed of a first layer of two or more wires and a second layer of two or more address wires that overlays the first layer. The nanoscale device may also include an intermediate layer positioned between the first layer and the second layer. Two or more redundant electrical component patterns may be fabricated within the intermediate layer so that one or more of the electrical component patterns is aligned with the first and second layers.

    摘要翻译： 尽管本发明的各种实施例涉及将电线接合到地址线的交叉列阵列设计，尽管电气部件和电线之间未对准。 在一个实施例中，纳米级器件可以由两条或更多条线的第一层和覆盖第一层的两条或更多条地址线的第二层组成。 纳米级器件还可以包括位于第一层和第二层之间的中间层。 可以在中间层内制造两个或更多个冗余电组件图案，使得一个或多个电组件图案与第一层和第二层对准。

    Integrated nanotube and field effect switching device
    28.
    发明授权
    Integrated nanotube and field effect switching device 有权
    集成纳米管和场效应开关器件

    公开(公告)号：US07288970B2

    公开(公告)日：2007-10-30

    申请号：US11033089

    申请日：2005-01-10

    申请人： Claude L. Bertin

    发明人： Claude L. Bertin

    IPC分类号： H03K19/20

    CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C23/00 ,  G11C2213/17 ,  H01H1/0094 ,  H03K17/545 ,  H03K19/08 ,  Y10S977/70 ,  Y10S977/94

    摘要： Hybrid switching devices integrate nanotube switching elements with field effect devices, such as NFETs and PFETs. A switching device forms and unforms a conductive channel from the signal input to the output subject to the relative state of the control input. In embodiments of the invention, the conductive channel includes a nanotube channel element and a field modulatable semiconductor channel element. The switching device may include a nanotube switching element and a field effect device electrically disposed in series. According to one aspect of the invention, an integrated switching device is a four-terminal device with a signal input terminal, a control input terminal, a second input terminal, and an output terminal. The devices may be non-volatile. The devices can form the basis for a hybrid NT-FET logic family and can be used to implement any Boolean logic circuit.

    摘要翻译： 混合开关器件将纳米管开关元件与诸如NFET和PFET之类的场效应器件集成。 开关装置根据控制输入的相对状态，将导电通道从输入到输出的信号输入形成和取消。 在本发明的实施例中，导电通道包括纳米管通道元件和场可调制半导体通道元件。 开关装置可以包括串联电配置的纳米管开关元件和场效应器件。 根据本发明的一个方面，集成开关装置是具有信号输入端子，控制输入端子，第二输入端子和输出端子的四端子装置。 这些设备可能是非易失性的。 这些器件可以构成混合型NT-FET逻辑系列的基础，可用于实现任何布尔逻辑电路。