公开(公告)号：US07148621B2

公开(公告)日：2006-12-12

申请号：US10825754

申请日：2004-04-16

Applicant: Zhizhang Chen ,  Ronald L. Enck ,  Sriram Ramamoorthi ,  Qin Liu

Inventor： Zhizhang Chen ,  Ronald L. Enck ,  Sriram Ramamoorthi ,  Qin Liu

IPC: H01J1/62 ,  H01J63/04

CPC classification number: H01J3/02 ,  B82Y10/00 ,  H01J1/30 ,  H01J1/312 ,  H01J3/021 ,  H01J9/022 ,  H01J2237/1205

Abstract: A method for creating an electron lens includes the steps of applying a polymer layer on an emitter surface of an electron emitter and then curing the polymer layer to reduce volatile content.

公开(公告)号：US20060267480A1

公开(公告)日：2006-11-30

申请号：US11501745

申请日：2006-08-10

Applicant: Toshiaki Kusunoki ,  Masakazu Sagawa ,  Mutsumi Suzuki

Inventor： Toshiaki Kusunoki ,  Masakazu Sagawa ,  Mutsumi Suzuki

IPC: H01J63/04

CPC classification number: H01J31/127 ,  B82Y10/00 ,  H01J1/312 ,  Y10S345/905

Abstract: The invention provides a display device using thin film type electron sources having a structure that can be formed in a simple manufacturing process. A lower electrode, a protective insulating layer and an interlayer film are formed on a cathode substrate. An upper bus electrode made from a laminated film of a metal film lower layer and a metal film upper layer is provided further on the interlayer film. A film of an upper electrode of a thin film type electron source for each pixel constituted by an insulating layer serving as an electron accelerating layer on the lower electrode and the upper electrode is formed on two stripe electrodes of the upper bus electrode in that pixel and another upper bus electrode in an adjacent pixel by sputtering. Then, the upper electrode is separated by self-alignment due to a setback portion of the metal film lower layer and an appentice of the metal film upper layer of the corresponding upper bus electrode. Thus, a thin film type electron source separated in accordance with each pixel is formed.

公开(公告)号：US07129641B2

公开(公告)日：2006-10-31

申请号：US10724149

申请日：2003-12-01

Applicant: Toshiaki Kusunoki ,  Masakazu Sagawa ,  Mutsumi Suzuki

Inventor： Toshiaki Kusunoki ,  Masakazu Sagawa ,  Mutsumi Suzuki

IPC: G09G3/10

CPC classification number: H01J31/127 ,  B82Y10/00 ,  H01J1/312 ,  Y10S345/905

Abstract: The invention provides a display device using thin film type electron sources having a structure that can be formed in a simple manufacturing process. A lower electrode, a protective insulating layer and an interlayer film are formed on a cathode substrate. An upper bus electrode made from a laminated film of a metal film lower layer and a metal film upper layer is provided further on the interlayer film. A film of an upper electrode of a thin film type electron source for each pixel constituted by an insulating layer serving as an electron accelerating layer on the lower electrode and the upper electrode is formed on two stripe electrodes of the upper bus electrode in that pixel and another upper bus electrode in an adjacent pixel by sputtering. Then, the upper electrode is separated by self-alignment due to a setback portion of the metal film lower layer and an appentice of the metal film upper layer of the corresponding upper bus electrode. Thus, a thin film type electron source separated in accordance with each pixel is formed.

Abstract translation: 本发明提供一种使用薄膜型电子源的显示装置，其具有能够以简单的制造工艺形成的结构。 在阴极基板上形成下电极，保护绝缘层和中间膜。 在层间膜上还设置由金属膜下层和金属膜上层的叠层膜制成的上部总线电极。 在该像素中的上部总线电极的两个条状电极上形成由用于在下部电极和上部电极上的电子加速层的绝缘层构成的每个像素的薄膜型电子源的上部电极的膜， 通过溅射在相邻像素中的另一个上总线电极。 然后，由于金属膜下层的后退部分和相应的上部总线电极的金属膜上层的附着，上部电极由于自对准而分离。 因此，形成根据每个像素分离的薄膜型电子源。

公开(公告)号：US07118982B2

公开(公告)日：2006-10-10

申请号：US10935795

申请日：2004-09-07

Applicant: Alexander Govyadinov ,  Michael J. Regan

Inventor： Alexander Govyadinov ,  Michael J. Regan

IPC: H01L21/331

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J29/467 ,  H01J2201/304 ,  H01J2201/3125

Abstract: An emitter includes an electron source and a cathode. The cathode has an emissive surface. The emitter further includes a continuous anisotropic conductivity layer disposed between the electron source and the emissive surface of the cathode. The anisotropic conductivity layer has an anisotropic sheet resistivity profile and provides for substantially uniform emissions over the emissive surface of the emitter.

公开(公告)号：US07078855B2

公开(公告)日：2006-07-18

申请号：US11035806

申请日：2005-01-12

Applicant: Zhizhang Chen ,  Sriram Ramamoorthi ,  Terry E McMahon ,  Timothy F. Myers

Inventor： Zhizhang Chen ,  Sriram Ramamoorthi ,  Terry E McMahon ,  Timothy F. Myers

IPC: H01L29/02 ,  H01J1/30

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/022

Abstract: A light device includes an electron supply defining an emitter surface. A dielectric tunneling layer is disposed between the electron supply and a cathode layer. The cathode layer has at least partial photon transparency that is substantially uniform across the emitter surface.

公开(公告)号：US07071628B2

公开(公告)日：2006-07-04

申请号：US10719521

申请日：2003-11-21

Applicant: Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada

Inventor： Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada

IPC: G09G3/10

CPC classification number: B82Y10/00 ,  H01J1/30 ,  H01J1/312 ,  H01J1/32

Abstract: An electronic pulse generation device has an emitter section having a plate shape, a cathode electrode formed on a front surface of the emitter section, an anode electrode formed on a back surface of the emitter section, and a pulse generation source which applies a drive voltage between the cathode electrode and the anode electrode through a resistor. The anode electrode is connected to GND through another resistor. A collector electrode is provided above the cathode electrode, and the collector electrode is coated with a phosphor layer. A bias voltage is applied to the collector electrode through another resistor.

Abstract translation: 电子脉冲发生装置具有板状的发射极部分，形成在发射极部分的前表面上的阴极电极，形成在发射极部分的背面上的阳极电极和施加驱动电压的脉冲发生源 通过电阻器在阴极电极和阳极电极之间。 阳极通过另一个电阻连接到GND。 集电极设置在阴极电极的上方，集电极涂覆荧光体层。 偏置电压通过另一个电阻施加到集电极。

公开(公告)号：US20060082318A1

公开(公告)日：2006-04-20

申请号：US11236423

申请日：2005-09-27

Applicant: Iwao Ohwada ,  Takayoshi Akao ,  Tetsuyuki Kameji ,  Hirokazu Nakamura

Inventor： Iwao Ohwada ,  Takayoshi Akao ,  Tetsuyuki Kameji ,  Hirokazu Nakamura

IPC: H05B37/00

CPC classification number: G09G3/22 ,  B82Y10/00 ,  G09G2310/0275 ,  G09G2310/06 ,  G09G2320/043 ,  G09G2330/025 ,  H01J1/312 ,  H05B41/2806 ,  Y02B20/22

Abstract: An electron-emitting element has an electron emission unit including a lower electrode, an emitter section composed of a dielectric material, and an upper electrode having a plurality of micro through holes; and a power supply for applying a power supply voltage to the electron emission unit. During the period between the point at which emission of electrons accumulated in the emitter section is started and the point at which the electron emission is completed, the power supply generates a first power supply voltage, whose absolute value changes with forming a sinusoidal wave so that the potential of the upper electrode is higher than the potential of the lower electrode. During the period between the point at which the electron accumulation in the emitter section is started and the point at which the electron accumulation is completed, the power supply generates a second power supply voltage whose absolute value increases with forming a sinusoidal wave so that the potential of the lower electrode is higher than the potential of the upper electrode.

Abstract translation: 电子发射元件具有电子发射单元，其包括下电极，由电介质材料构成的发射极部分和具有多个微通孔的上电极; 以及用于向电子发射单元施加电源电压的电源。 在开始发射部分的电子发射点与电子发射完成点之间的时间段期间，电源产生第一电源电压，其绝对值随着形成正弦波而改变，使得 上电极的电位高于下电极的电位。 在开始发射部分的电子积分点和电子积累完成点之间的时间段期间，电源产生绝对值随形成正弦波而增加的第二电源电压，使得电位 下电极的电位高于上电极的电位。

公开(公告)号：US20060044730A1

公开(公告)日：2006-03-02

申请号：US11209332

申请日：2005-08-23

Applicant: Hirofumi Yamaguchi ,  Kei Sato ,  Toshikatsu Kashiwaya

Inventor： Hirofumi Yamaguchi ,  Kei Sato ,  Toshikatsu Kashiwaya

IPC: H01H47/00

CPC classification number: H01J1/312 ,  B82Y10/00 ,  C04B35/493 ,  C04B35/499 ,  C04B2235/3206 ,  C04B2235/3213 ,  C04B2235/3255 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3267 ,  C04B2235/3279 ,  C04B2235/3298 ,  C04B2235/5445 ,  C04B2235/768 ,  C04B2235/79 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/3125 ,  H01J2201/317 ,  H01J2329/0484 ,  H01J2329/0492

Abstract: [Problems] To provide a dielectric component which remedies the degradation of amount of electron emission of an electron emitter. [Means to Solve the Problems] Provided is a dielectric composition which, when applied to an electron emitter, enables suppression of reduction of electron emission quantity with passage of time. The dielectric composition contains, as a primary component, a PMN-PZ-PT ternary solid solution composition represented by the following formula PbxBip(Mgy/3Nb2/3)aTib-zMzZrcO3 [wherein x, p, and y satisfy the following relations: 0.85≦x≦1.05, 0.02≦p≦0.1, and 0.8≦y≦1.0; a, b, and c are decimal numbers falling within a region formed by connecting the following five points (0.550, 0.425, 0.025), (0.550, 0.150, 0.300), (0.100, 0.150, 0.750), (0.100, 0.525, 0.375), and (0.375, 0.425, 0.200); z satisfies the following relation: 0.02≦z≦0.10; and M is at least one element selected from among Nb, Ta, Mo, and W], and contains Ni in an amount of 0.05 to 2.0 wt. % as reduced to NiO.

Abstract translation: [问题]提供补偿电子发射体的电子发射量的劣化的电介质成分。 解决问题的手段提供一种电介质组合物，当应用于电子发射体时，可以抑制电子发射量随时间的减少。 电介质组合物含有作为主要成分的由下式表示的PMN-PZ-PT三元固溶体组合物Pb（Mg y / y） 3 Nb 2/3 3）a z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / 其中x，p和y满足以下关系：0.85 <= x <= 1.05,0.02 <= p <= 0.1，0.8 <= y <= 1.0; a，b，c是分别连接以下五个点（0.550,0.425,0.025），（0.550,0.150,0.300），（0.100,0.150,0.7050），（0.100,0.525,0.375），（0.100,0.525,0.375）， ）和（0.375,0.425,0.200）; z满足以下关系：0.02 <= z <= 0.10; 并且M是选自Nb，Ta，Mo和W中的至少一种元素，并且含有0.05-2.0重量％的Ni。 ％减少到NiO。

公开(公告)号：US06953946B2

公开(公告)日：2005-10-11

申请号：US10674459

申请日：2003-10-01

Applicant: In-kyeong Yoo ,  Chang-wook Moon ,  Soo-hwan Jeong ,  Dong-wook Kim

Inventor： In-kyeong Yoo ,  Chang-wook Moon ,  Soo-hwan Jeong ,  Dong-wook Kim

IPC: G03F7/20 ,  H01J1/312 ,  H01J9/02 ,  H01J37/06 ,  H01J37/073 ,  H01J37/305 ,  H01L21/027 ,  H01L29/06 ,  H01L29/12 ,  H01L29/82 ,  H01L43/00

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/022 ,  H01J9/027 ,  H01J2237/31774 ,  H01J2237/31783

Abstract: An emitter for an electron-beam projection lithography (EPL) system and a manufacturing method therefor are provided. The electron-beam emitter includes a substrate, an insulating layer overlying the substrate, and a gate electrode including a base layer formed on top of the insulating layer to a uniform thickness and an electron-beam blocking layer formed on the base layer in a predetermined pattern. The manufacturing method includes steps of: preparing a substrate; forming an insulating layer on the substrate; forming a base layer of a gate electrode by depositing a conductive metal on the insulating layer to a predetermined thickness; forming an electron-beam blocking layer of the gate electrode by depositing a metal capable of anodizing on the base layer to a predetermined thickness; and patterning the electron-beam blocking layer in a predetermined pattern by anodizing. The emitter provides a uniform electric field within the insulating layer and simplify the manufacturing method therefor.

Abstract translation: 提供了一种用于电子束投影光刻（EPL）系统的发射器及其制造方法。 电子束发射器包括衬底，覆盖衬底的绝缘层，以及包括形成在绝缘层顶部上的基底层至均匀厚度的栅极电极和以预定的方式形成在基底层上的电子束阻挡层 模式。 该制造方法包括以下步骤：制备衬底; 在所述基板上形成绝缘层; 通过在所述绝缘层上沉积导电金属至预定厚度来形成栅电极的基层; 通过在基底层上沉积能够阳极氧化的金属至预定的厚度来形成栅电极的电子束阻挡层; 并通过阳极氧化将预定图案中的电子束阻挡层图案化。 发射极在绝缘层内提供均匀的电场，并简化其制造方法。

公开(公告)号：US06891176B2

公开(公告)日：2005-05-10

申请号：US10601090

申请日：2003-06-20

Applicant: Petr Viscor ,  Michael Jensen ,  Rolf Stribolt Andersen ,  Vladimir Kolarik ,  Armin Delong

Inventor： Petr Viscor ,  Michael Jensen ,  Rolf Stribolt Andersen ,  Vladimir Kolarik ,  Armin Delong

IPC: G11B9/10 ,  H01J1/312 ,  H01J7/24 ,  H01J37/06 ,  H01J37/317

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J2201/3125

Abstract: Metal-insulator-metal planar electron emitters (PEES) have potential for use in advanced lithography for future generations of semiconductor devices. The PEE has, however, a limited lifetime, which restricts its commercial applicability. It is believed that the limited lifetime of the PEE is limited by in-diffusion of metal ions from the anode. The in-diffusion may be countered in a number of different ways. One way is to cool the PEE to temperatures below room temperature. This lowers the metal ion mobility, and so the metal ions are less likely to diffuse into the insulator layer. Another way is to occasionally reverse the electrical potential across the PEE from the polarity used to generate the electron beam. This counteracts the electrical driving force that drives the positively charged metal ions from the PEE anode to the PEE cathode.

Abstract translation: 金属 - 绝缘体 - 金属平面电子发射体（PEES）有潜力用于未来几代半导体器件的先进光刻技术。 然而，PEE的寿命有限，限制了其商业应用。 据信，PEE的有限寿命受到来自阳极的金属离子的扩散的限制。 内扩散可以以多种不同的方式进行反驳。 一种方法是将PEE冷却到低于室温的温度。 这降低了金属离子迁移率，因此金属离子不太可能扩散到绝缘体层中。 另一种方法是偶尔从用于产生电子束的极性反转PEE两端的电位。 这抵消了驱动从PEE阳极到PEE阴极的带正电荷的金属离子的电驱动力。