Vacuum device having a getter
    3.
    发明授权
    Vacuum device having a getter 有权
    具有吸气剂的真空装置

    公开(公告)号:US07045958B2

    公开(公告)日:2006-05-16

    申请号:US10413048

    申请日:2003-04-14

    IPC分类号: H01J17/24 H01J19/70 H01J61/26

    CPC分类号: H01J7/186 F04B37/02 H01J19/70

    摘要: A vacuum device, including a substrate and a support structure having a support perimeter, where the support structure is disposed over the substrate. In addition, the vacuum device also includes a non-evaporable getter layer having an exposed surface area. The non-evaporable getter layer is disposed over the support structure, and extends beyond the support perimeter, in at least one direction, of the support structure forming a vacuum gap between the substrate and the non-evaporable getter layer increasing the exposed surface area.

    摘要翻译: 一种真空装置,包括基底和具有支撑周边的支撑结构,其中所述支撑结构设置在所述基底上。 此外,真空装置还包括具有暴露表面积的不可蒸发的吸气剂层。 不可蒸发的吸气剂层设置在支撑结构上方,并且在支撑结构的至少一个方向上延伸超过支撑周边,所述支撑结构在衬底和非蒸发性吸气剂层之间形成真空间隙,增加暴露的表面积。

    Method of making a getter structure
    4.
    发明授权
    Method of making a getter structure 有权
    制作吸气剂结构的方法

    公开(公告)号:US06988924B2

    公开(公告)日:2006-01-24

    申请号:US10412918

    申请日:2003-04-14

    CPC分类号: H01J7/183

    摘要: A method of manufacturing a getter structure, including forming a support structure having a support perimeter, where the support structure is disposed over a substrate. In addition, the method includes forming a non-evaporable getter layer having an exposed surface area, where the non-evaporable getter layer is disposed over the support structure, and includes forming a vacuum gap between the substrate and the non-evaporable getter layer. The non-evaporable getter layer extends beyond the support perimeter of the support structure increasing the exposed surface area.

    摘要翻译: 一种制造吸气剂结构的方法,包括形成具有支撑周长的支撑结构,其中所述支撑结构设置在衬底上。 此外,该方法包括形成具有暴露表面积的不可蒸发的吸气剂层,其中非蒸发性吸气剂层设置在支撑结构上方,并且包括在衬底和非蒸发性吸气剂层之间形成真空间隙。 不可蒸发的吸气剂层延伸超过支撑结构的支撑周边,增加暴露的表面积。

    Vacuum device having non-evaporable getter component with increased exposed surface area
    5.
    发明授权
    Vacuum device having non-evaporable getter component with increased exposed surface area 有权
    具有不可蒸发的吸气剂组分的真空装置具有增加的暴露表面积

    公开(公告)号:US07608998B2

    公开(公告)日:2009-10-27

    申请号:US11387222

    申请日:2006-03-22

    IPC分类号: H01J17/24 H01J19/70 H01J61/26

    CPC分类号: H01J7/186 F04B37/02 H01J19/70

    摘要: A vacuum device, including a substrate and a support structure having a support perimeter, where the support structure is disposed over the substrate. In addition, the vacuum device also includes a non-evaporable getter layer having an exposed surface area. The non-evaporable getter layer is disposed over the support structure, and extends beyond the support perimeter, in at least one direction, of the support structure forming a vacuum gap between the substrate and the non-evaporable getter layer increasing the exposed surface area.

    摘要翻译: 一种真空装置,包括基底和具有支撑周边的支撑结构,其中所述支撑结构设置在所述基底上。 此外,真空装置还包括具有暴露表面积的不可蒸发的吸气剂层。 不可蒸发的吸气剂层设置在支撑结构上方,并且在支撑结构的至少一个方向上延伸超过支撑周边,所述支撑结构在衬底和非蒸发性吸气剂层之间形成真空间隙,增加暴露的表面积。

    Silicon-based dielectric tunneling emitter
    8.
    发明授权
    Silicon-based dielectric tunneling emitter 有权
    硅基电介质隧道发射极

    公开(公告)号:US06753544B2

    公开(公告)日:2004-06-22

    申请号:US09846047

    申请日:2001-04-30

    IPC分类号: H01L2906

    CPC分类号: B82Y10/00 H01J1/312 H01J9/022

    摘要: An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

    摘要翻译: 发射体具有形成在电子供给层上的电子供给层和硅基电介质层。 硅基电介质层优选小于约500埃。 可选地,在电子供给层上形成绝缘体层,并且限定了形成硅基电介质层的开口。 在硅基电介质层上形成阴极层,以提供电子和/或光子能量发射的表面。 优选地,对发射极进行退火处理,从而增加从电子供给层隧穿到阴极层的电子的供应。

    Method of treating a metal surface to increase polymer adhesion
    10.
    发明授权
    Method of treating a metal surface to increase polymer adhesion 失效
    处理金属表面以增加聚合物粘合力的方法

    公开(公告)号:US06441838B1

    公开(公告)日:2002-08-27

    申请号:US09765825

    申请日:2001-01-19

    IPC分类号: G01D928

    CPC分类号: B41J2/1606 B41J2/14129

    摘要: A thermal ink jet printhead that includes a thin film substrate including a plurality of thin film layers, a plurality of ink firing heater resistors defined in the plurality of thin film layers, a patterned tantalum layer disposed on said plurality of thin film layers, a barrier adhesion layer disposed on the patterned tantalum layer, an ink barrier layer disposed over the barrier adhesion layer, and respective ink chambers formed in the ink barrier layer over respective thin film resistors, each chamber formed by a chamber opening in barrier layer, the barrier adhesion layer more particularly comprises a tantalum nitride layer or a deposited tantalum, carbon, fluorine, and oxygen containing layer that is formed pursuant to exposure of the patterned tantalum layer to a plasma that includes a fluorinated hydrocarbon such as carbon tetrafluoride (CF4), fluoroform (CHF3), hexafluoroethane (C2F6), difluoromethane (CH2F2), pentafluoroethane (C2HF5), tetrafluoroethane (C2H2F4), or octafluorobutene (C4F8).

    摘要翻译: 一种热喷墨打印头,其包括具有多个薄膜层的薄膜基板,多个薄膜层中限定的多个喷墨加热电阻器,设置在所述多个薄膜层上的图案化钽层, 设置在图案化的钽层上的粘合层,设置在阻挡粘附层上的油墨阻挡层和在各个薄膜电阻器上形成在油墨阻挡层中的各个油墨室,每个室由阻挡层中的开口形成, 层更具体地包括氮化钽层或沉积的钽,碳,氟和含氧层,其是通过将图案化的钽层暴露于等离子体而形成的,所述等离子体包括氟化烃如四氟化碳(CF 4),氟代( CHF3),六氟乙烷(C2F6),二氟甲烷(CH2F2),五氟乙烷(C2HF5),四氟乙烷(C2H2F4)或八氟 (C4F8)。