公开(公告)号：US08872287B2

公开(公告)日：2014-10-28

申请号：US12056286

申请日：2008-03-27

Applicant: Bang-Chiang Lan ,  Li-Hsun Ho ,  Wei-Cheng Wu ,  Hui-Min Wu ,  Min Chen ,  Tzung-I Su ,  Chien-Hsin Huang

Inventor： Bang-Chiang Lan ,  Li-Hsun Ho ,  Wei-Cheng Wu ,  Hui-Min Wu ,  Min Chen ,  Tzung-I Su ,  Chien-Hsin Huang

IPC: H01L29/84 ,  B81C1/00

CPC classification number: B81C1/00246 ,  B81C1/00801 ,  B81C2201/014 ,  B81C2203/0714 ,  B81C2203/0742 ,  B81C2203/0792 ,  H01L27/0688

Abstract: The present invention relates to an integrated structure for a MEMS device and a semiconductor device and a method of fabricating the same, in which an etch stopping element is included on a substrate between the MEMS device and the semiconductor device for protecting the semiconductor device from lateral damage when an oxide releasing process is performed to fabricate the MEMS device. The etch stopping element has various profiles and is selectively formed by an individual fabricating process or is simultaneously formed with the semiconductor device in the same fabricating process. It is a singular structure or a combined stacked multilayered structure, for example, a plurality of rows of pillared etch-resistant material plugs, one or a plurality of wall-shaped etch-resistant material plugs, or a multilayered structure of a stack of which and an etch-resistant material layer.

Abstract translation: 本发明涉及用于MEMS器件和半导体器件的集成结构及其制造方法，其中在MEMS器件和半导体器件之间的衬底上包括蚀刻停止元件，用于保护半导体器件免受横向 执行氧化物释放处理以制造MEMS器件时的损坏。 蚀刻停止元件具有各种形状，并且通过单独的制造工艺选择性地形成，或者在相同的制造工艺中与半导体器件同时形成。 它是单一结构或组合堆叠的多层结构，例如，多排支柱抗蚀刻材料插塞，一个或多个壁状耐蚀刻材料插塞或其堆叠的多层结构 和耐蚀刻材料层。

公开(公告)号：US20140312436A1

公开(公告)日：2014-10-23

申请号：US13868125

申请日：2013-04-23

Applicant: Matthieu Lagouge

Inventor： Matthieu Lagouge

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00801 ,  B81B2201/0235 ,  B81B2203/0307 ,  B81C2201/014 ,  B81C2203/036

Abstract: A method of fabricating a microelectromechanical (MEMS) device includes bonding a transducer wafer to a substrate wafer along a bond interface. An unpatterned transducer layer included within the transducer wafer is patterned. A release etch process is then performed during which a sacrificial layer is exposed to a selected release etchant to remove at a least a portion of the sacrificial layer through the openings in the patterned transducer layer. A release etch stop layer is formed between the sacrificial layer and the bond interface prior to exposing the sacrificial layer to the release etchant. The release etch stop layer prevents the ingress of the selected release etchant into the region of the MEMS device containing the bond interface during the release etch process.

Abstract translation: 一种制造微机电（MEMS）装置的方法包括沿着键合界面将换能器晶片连接到衬底晶片。 包含在换能器晶片内的未图案化的换能器层被图案化。 然后执行释放蚀刻工艺，在此期间，牺牲层暴露于所选择的释放蚀刻剂，以通过图案化的换能器层中的开口在牺牲层的至少一部分上移除。 在将牺牲层暴露于释放蚀刻剂之前，在牺牲层和接合界面之间形成释放蚀刻停止层。 释放蚀刻停止层在释放蚀刻工艺期间防止所选择的剥离蚀刻剂进入包含结合界面的MEMS器件的区域中。

公开(公告)号：US08829630B2

公开(公告)日：2014-09-09

申请号：US13699614

申请日：2011-05-25

Applicant: Masahiro Sakuragi ,  Toma Fujita ,  Mizuho Okada

Inventor： Masahiro Sakuragi ,  Toma Fujita ,  Mizuho Okada

IPC: H01L29/84 ,  B81C1/00 ,  H01L21/762 ,  G01L9/00

CPC classification number: G01L9/0042 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C2201/014 ,  G01L9/0045 ,  G01L9/0054 ,  G01L9/0073 ,  H01L21/76264 ,  H01L21/76283

Abstract: [Subject] To provide a pressure sensor capable of implementing cost reduction and miniaturization.[Solving Means] A pressure sensor 1 includes a silicon substrate 2 provided therein with a reference pressure chamber 8, a diaphragm 10, consisting of part of the silicon substrate 2, formed on a surface layer portion of the silicon substrate 2 to partition a reference pressure chamber 8, and an etching stop layer 9 formed on a lower surface of the diaphragm 10 facing the reference pressure chamber 8. A through-hole 11 communicating with the reference pressure chamber 8 is formed on the diaphragm 10, and a filler 13 is arranged in the through-hole 11.

Abstract translation: 提供能够实现成本降低和小型化的压力传感器。 解决方法压力传感器1包括设置有基准压力室8的硅基板2，由硅基板2的一部分构成的振动板10，其形成在硅基板2的表层部分上，以分隔基准 压力室8和形成在隔膜10的与基准压力室8相对的下表面上的蚀刻停止层9.在隔膜10上形成有与基准压力室8连通的通孔11，填料13 布置在通孔11中。

公开(公告)号：US08546265B2

公开(公告)日：2013-10-01

申请号：US12997942

申请日：2009-04-08

Applicant: Yoshiyuki Nozawa ,  Takashi Yamamoto

Inventor： Yoshiyuki Nozawa ,  Takashi Yamamoto

IPC: H01L21/3065 ,  B81C1/00

CPC classification number: B81C1/00619 ,  B81B2203/033 ,  B81C1/00531 ,  B81C1/00626 ,  B81C2201/0132 ,  B81C2201/014 ,  H01L21/3065 ,  H01L21/30655

Abstract: A method for manufacturing a silicon structure according to the present invention includes, in a so-called dry-etching process wherein gas-switching is employed, the steps of: etching a portion in the silicon region at a highest etching rate under a high-rate etching condition such that the portion does not reach the etch stop layer; subsequently etching under a transition etching condition in which an etching rate is decreased with time from the highest etching rate in the high-rate etching condition; and thereafter, etching the silicon region under a low-rate etching condition of a lowest etching rate in the transition etching condition.

Abstract translation: 根据本发明的制造硅结构的方法包括：在所谓的干法蚀刻工艺中采用气体切换，其步骤为：以高蚀刻速率蚀刻硅区中的部分， 速率蚀刻条件使得该部分不到达蚀刻停止层; 随后在高速蚀刻条件下从最高蚀刻速率随着时间从而蚀刻速率降低的过渡蚀刻条件下进行蚀刻; 然后在转变蚀刻条件下以最低蚀刻速率的低速蚀刻条件蚀刻硅区域。

公开(公告)号：US20130199301A1

公开(公告)日：2013-08-08

申请号：US13368370

申请日：2012-02-08

Applicant: Thoralf Kautzsch

Inventor： Thoralf Kautzsch

IPC: G01L9/16 ,  H01L21/02

CPC classification number: B81C1/00158 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/053 ,  B81C2201/014 ,  H04R19/005 ,  H04R31/00

Abstract: Embodiments related to pressure sensitive structures are described and depicted.

Abstract translation: 描述和描绘与压敏结构相关的实施例。

公开(公告)号：US20120225559A1

公开(公告)日：2012-09-06

申请号：US13411871

申请日：2012-03-05

Applicant: Ricky Alan JACKSON ,  Walter Baker MEINEL ,  Karen Hildegard Ralston KIRMSE

Inventor： Ricky Alan JACKSON ,  Walter Baker MEINEL ,  Karen Hildegard Ralston KIRMSE

IPC: H01L21/302

CPC classification number: B81C1/00047 ,  B81B2203/0315 ,  B81B2203/0353 ,  B81C1/00801 ,  B81C2201/014

Abstract: A process of forming a MEMS device with a device cavity underlapping an overlying dielectric layer stack having an etchable sublayer over an etch-resistant lower portion, including: etching through at least the etchable sublayer of the overlying dielectric layer stack in an access hole to expose a lateral face of the etchable sublayer, covering exposed surfaces of the etchable sublayer by protective material, and subsequently performing a cavity etch. A cavity etch mask may cover the exposed surfaces of the etchable sublayer. Alternatively, protective sidewalls may be formed by an etchback process to cover the exposed surfaces of the etchable sublayer. Alternatively, the exposed lateral face of the etchable sublayer may be recessed by an isotropic etch, than isolated by a reflow operation which causes edges of an access hole etch mask to drop and cover the exposed lateral face of the etchable sublayer.

Abstract translation: 一种形成具有器件空腔的MEMS器件的过程，该器件空腔将覆盖在具有可蚀刻子层的覆盖介质层堆叠覆盖在耐蚀刻下部上，包括：至少蚀刻入口孔中的上覆电介质层堆叠的可蚀刻子层以暴露 可蚀刻子层的侧面，通过保护材料覆盖可蚀刻子层的暴露表面，并随后执行腔蚀刻。 腔蚀刻掩模可以覆盖可蚀刻子层的暴露表面。 或者，可以通过回蚀工艺形成保护侧壁，以覆盖可蚀刻子层的暴露表面。 或者，可蚀刻子层的暴露的侧面可以通过各向同性蚀刻来凹陷，而不是通过回流操作来隔离，这导致访问孔蚀刻掩模的边缘落下并覆盖可蚀刻子层的暴露的侧面。

公开(公告)号：US20120181638A1

公开(公告)日：2012-07-19

申请号：US13349696

申请日：2012-01-13

Applicant: Mickael Renault ,  Joseph Damian Gordon Lacey ,  Vikram Joshi ,  Thomas L. Maguire

Inventor： Mickael Renault ,  Joseph Damian Gordon Lacey ,  Vikram Joshi ,  Thomas L. Maguire

IPC: H01L29/84 ,  H01L21/00

CPC classification number: B81B3/0072 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2207/096 ,  B81C1/00039 ,  B81C1/00333 ,  B81C1/00476 ,  B81C2201/0132 ,  B81C2201/014 ,  B81C2203/0145 ,  B81C2203/0714

Abstract: The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion.

Abstract translation: 本发明一般涉及用于生产MEMS或NEMS装置和装置本身的方法。 与悬臂结构相比，具有较低复合系数的材料的薄层可以沉积在悬臂结构，RF电极和拉出电极上。 薄层允许引入空腔的蚀刻气体降低空腔内的整体蚀刻剂复合速率，从而提高空腔内的牺牲材料的蚀刻速率。 蚀刻剂本身可以通过与悬臂结构的锚固部分线性对准的封装层中的开口引入，使得首先蚀刻最顶层的牺牲材料。 此后，密封材料可以密封空腔并且一直延伸到空腔中，以锚定部分，以向锚固部分提供额外的强度。

公开(公告)号：US08218229B2

公开(公告)日：2012-07-10

申请号：US12711634

申请日：2010-02-24

Applicant: Teruo Sasagawa ,  Clarence Chui ,  Manish Kothari ,  SuryaPrakash Ganti ,  Jeffrey B. Sampsell ,  Chun-Ming Wang

Inventor： Teruo Sasagawa ,  Clarence Chui ,  Manish Kothari ,  SuryaPrakash Ganti ,  Jeffrey B. Sampsell ,  Chun-Ming Wang

IPC: G02B26/00 ,  G02B26/08

CPC classification number: G02B26/0841 ,  B81B2201/042 ,  B81B2203/0307 ,  B81C1/00595 ,  B81C2201/014 ,  G02B26/001

Abstract: A microelectromechanical systems device having support structures formed of sacrificial material surrounded by a protective material. The microelectromechanical systems device includes a substrate having an electrode formed thereon. Another electrode is separated from the first electrode by a cavity and forms a movable layer, which is supported by support structures formed of a sacrificial material.

Abstract translation: 具有由保护材料围绕的牺牲材料形成的支撑结构的微机电系统装置。 微机电系统装置包括其上形成有电极的基板。 另一电极通过空腔与第一电极分离，并形成可移动层，该可移动层由牺牲材料形成的支撑结构支撑。

公开(公告)号：US08163586B2

公开(公告)日：2012-04-24

申请号：US12265256

申请日：2008-11-05

Applicant: Patrice Rey ,  Mouna Salhi

Inventor： Patrice Rey ,  Mouna Salhi

IPC: H01L21/00

CPC classification number: B81C1/00158 ,  B81C2201/014

Abstract: A method for producing a device with at least one suspended membrane, including the following steps: Producing a trench through a first sacrificial layer and a second layer deposited on the first sacrificial layer, the trench completely surrounding at least a portion of the first sacrificial layer and at least a portion of the second layer, filling all or a portion of the trench with at least one material capable of resisting at least one etching agent, and etching the portion of the first sacrificial layer with the etching agent through at least one opening made in the second layer, the portion of the second layer forming at least one portion of the suspended membrane.

Abstract translation: 一种用于制造具有至少一个悬浮膜的器件的方法，包括以下步骤：通过沉积在第一牺牲层上的第一牺牲层和第二层产生沟槽，所述沟槽完全围绕第一牺牲层的至少一部分 和所述第二层的至少一部分，用至少一种能够抵抗至少一种蚀刻剂的材料填充所述沟槽的全部或一部分，以及用蚀刻剂通过至少一个开口蚀刻所述第一牺牲层的所述部分 制成在第二层中，第二层的部分形成悬浮膜的至少一部分。

公开(公告)号：US20110279919A1

公开(公告)日：2011-11-17

申请号：US13057411

申请日：2009-07-06

Applicant: Stefan Finkbeiner ,  Tjalf Pirk ,  Christoph Friese

Inventor： Stefan Finkbeiner ,  Tjalf Pirk ,  Christoph Friese

IPC: G02B7/182 ,  B05D3/10

CPC classification number: B81C1/00166 ,  B81B2201/033 ,  B81C2201/014

Abstract: A method for manufacturing a micromechanical component is described, including the steps of: forming a first etch stop layer on a base substrate, the first etch stop layer being formed in such a way that it has a first pattern of through-cutouts; forming a first electrode-material layer on the first etch stop layer; forming a second etch stop layer on the first electrode-material layer, the second etch stop layer being formed in such a way that it has a second pattern of through-cutouts differing from the first pattern; forming a second electrode-material layer on the second etch stop layer; forming a patterned mask on the second electrode-material layer; and carrying out a first etching step in a first direction and a second etching step in a second direction counter to the first direction in order to etch at least one first electrode unit out of the first electrode-material layer and to etch at least one second electrode unit out of the second electrode-material layer. Also described are micromechanical components.

Abstract translation: 描述了一种用于制造微机械部件的方法，包括以下步骤：在基底基板上形成第一蚀刻停止层，第一蚀刻停止层以这样的方式形成：其具有第一图形的通孔; 在所述第一蚀刻停止层上形成第一电极材料层; 在所述第一电极材料层上形成第二蚀刻停止层，所述第二蚀刻停止层以这样的方式形成：其具有不同于所述第一图案的通孔的第二图案; 在所述第二蚀刻停止层上形成第二电极材料层; 在所述第二电极材料层上形成图案化掩模; 并且在与第一方向相反的第二方向上沿第一方向和第二蚀刻步骤进行第一蚀刻步骤，以便从第一电极材料层中蚀刻至少一个第一电极单元并蚀刻至少一个第二 电极单元排出第二电极材料层。 还描述了微机械部件。