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公开(公告)号：US11555964B1
公开(公告)日：2023-01-17
申请号：US17363846
申请日：2021-06-30
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor： Michal Rakowski , Petar I. Todorov , Yusheng Bian , Won Suk Lee , Asif J. Chowdhury , Kenneth J. Giewont
Abstract: Disclosed is a photonic structure and associated method. The structure includes a closed-curve waveguide having a first height, as measured from the top surface of an insulator layer, and an outer curved sidewall that extends essentially vertically the full first height (e.g., to minimize signal loss). The structure includes a closed-curve thermal coupler and a heating element. The closed-curve thermal coupler is thermally coupled to and laterally surrounded by the closed-curve waveguide and has a second height that is less than the first height. In some embodiments, the closed-curve waveguide and the closed-curve thermal coupler are continuous portions of the same semiconductor layer having different thicknesses. The heating element is thermally coupled to the closed-curve thermal coupler and thereby indirectly thermally coupled to the closed-curve waveguide. Thus, the heating element is usable for thermally tuning the closed-curve waveguide via the closed-curve thermal coupler to minimize any temperature-dependent resonance shift (TDRS).
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公开(公告)号：US20230009597A1
公开(公告)日：2023-01-12
申请号：US17369253
申请日：2021-07-07
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor： Yusheng Bian
Abstract: Structures for an edge coupler and methods of fabricating a structure for an edge coupler. A waveguide core includes a waveguide core section that has a first notched sidewall, a second notched sidewall, and an end surface connecting the first notched sidewall to the second notched sidewall. Segments are positioned with a spaced arrangement adjacent to the end surface of the waveguide core section, and a slab layer is adjoined to the segments, the first notched sidewall of the waveguide core section, the second notched sidewall of the waveguide core section, and the end surface of the waveguide core section. The segments and the waveguide core section have a first thickness, and the slab layer has a second thickness that is less than the first thickness.
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公开(公告)号：US11536914B2
公开(公告)日：2022-12-27
申请号：US17099834
申请日：2020-11-17
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor： Yusheng Bian , Siva P. Adusumilli , Mark D. Levy
IPC: G02B6/42 , H01L31/0256 , H01L31/02 , G02B6/12
Abstract: A photodetector array includes a substrate, and an array of pixels over the substrate. Each pixel includes a set of diffraction gratings directly on a semiconductor photodetector. A pitch of the set of diffraction gratings associated with each pixel in the array of pixels are different to enable each pixel to detect a specific wavelength of light different than other pixels of the array of pixels. An air cavity may be provided in the substrate under the germanium photodetector to improve light absorption. A method of forming the photodetector array is also disclosed.
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304.发明授权公开(公告)号：US11500262B2
公开(公告)日：2022-11-15
申请号：US16842887
申请日：2020-04-08
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor： Bo Peng , Yusheng Bian , Michal Rakowski , Tymon Barwicz
Abstract: One illustrative backscattering generator disclosed herein includes a low-reflection waveguide structure, a slot waveguide structure comprising a first waveguide, a second waveguide and a slot located between the first waveguide and the second waveguide, and a variable direction coupler operatively coupled to the low-reflection waveguide structure and the slot waveguide structure.
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公开(公告)号：US11467341B2
公开(公告)日：2022-10-11
申请号：US17094105
申请日：2020-11-10
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor： Yusheng Bian
Abstract: Structures with waveguide cores in multiple levels and methods of fabricating a structure that includes waveguide cores in multiple levels. The structure includes a first waveguide core and a second waveguide core positioned in a different level than the first waveguide core. The first waveguide core includes a longitudinal axis and a plurality of segments having a spaced arrangement along the longitudinal axis. The second waveguide core is aligned to extend across the plurality of segments of the first waveguide core.
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Patent Agency Ranking
公开(公告)号：US20220268994A1
公开(公告)日：2022-08-25
申请号：US17179532
申请日：2021-02-19
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor： Asli Sahin , Karen A. Nummy , Thomas Houghton , Kevin K. Dezfulian , Kenneth J. Giewont , Yusheng Bian
Abstract: A photonics integrated circuit includes a semiconductor substrate; a buried insulator layer positioned over the semiconductor substrate; and a back-end-of-line (BEOL) insulator stack over a first portion of the buried insulator layer. In addition, the PIC includes a silicon nitride (SiN) waveguide edge coupler positioned in a first region over the buried insulator layer and at least partially under the BEOL insulator stack. An oxide layer extends over a side of the BEOL insulator stack. The SiN waveguide edge coupler provides better power handling and fabrication tolerance than silicon waveguide edge couplers, despite the location under various BEOL layers. The PIC can also include silicon waveguide edger coupler(s).
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公开(公告)号：US11415821B2
公开(公告)日：2022-08-16
申请号：US16868631
申请日：2020-05-07
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor： Yusheng Bian , Ajey Poovannummoottil Jacob
Abstract: Structures for an electro-optic modulator and methods of fabricating a structure for an electro-optic modulator. The electro-optic modulator has a layer stack arranged over a section of a waveguide core. The layer stack includes a first layer, a second layer, and a third layer. The first layer, the second layer, and the third layer are each composed of either copper or indium-tin oxide.
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公开(公告)号：US20220252784A1
公开(公告)日：2022-08-11
申请号：US17170203
申请日：2021-02-08
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor： Alec Hammond , Yusheng Bian , Michal Rakowski , Won Suk Lee , Asif J. Chowdhury , Roderick A. Augur , Abdelsalam Aboketaf
Abstract: Structures for a wavelength-division multiplexing filter and methods of forming a structure for a wavelength-division multiplexing filter. The structure includes a first slab having a first perimeter, a first waveguide core coupled to the first slab, and a plurality of second waveguide cores coupled to the first slab. A second slab is positioned to overlap with the first slab. The second slab includes a second perimeter and openings that are distributed inside the second perimeter. The openings of the second slab penetrate through the second slab.
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309.发明授权公开(公告)号：US11409037B2
公开(公告)日：2022-08-09
申请号：US17082291
申请日：2020-10-28
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor： Yusheng Bian , Ryan W. Sporer , Karen A. Nummy
Abstract: Structures and methods implement an enlarged waveguide. The structure may include a semiconductor-on-insulator (SOI) substrate including a semiconductor-on-insulator (SOI) layer over a buried insulator layer over a semiconductor substrate. An inter-level dielectric (ILD) layer is over the SOI substrate. A first waveguide has a lower surface extending at least partially into the buried insulator layer, which allows vertical enlargement of the waveguide, without increasing the thickness of the ILD layer or increasing the length of interconnects to other devices. The enlarged waveguide may include nitride, and can be implemented with other conventional silicon and nitride waveguides.
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310.发明申请公开(公告)号：US20220247148A1
公开(公告)日：2022-08-04
申请号：US17167201
申请日：2021-02-04
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor： Yusheng Bian , Roderick A. Augur , Michal Rakowski , Kenneth J. Giewont , Karen A. Nummy
Abstract: A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.
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