公开(公告)号：US07903176B2

公开(公告)日：2011-03-08

申请号：US11496480

申请日：2006-08-01

Applicant: Jong-ho Lee ,  Kwang-kee Lee ,  Un-gyo Jung ,  Glenn A. Adams

Inventor： Jong-ho Lee ,  Kwang-kee Lee ,  Un-gyo Jung ,  Glenn A. Adams

IPC: H04N5/445

CPC classification number: G09G5/14 ,  G09G2340/0407 ,  G09G2340/0464 ,  G09G2340/10 ,  G09G2340/12 ,  G09G2340/125 ,  H04N5/445 ,  H04N5/44591 ,  H04N5/45 ,  H04N21/4312 ,  H04N21/4314 ,  H04N21/4316 ,  H04N21/443 ,  H04N21/4622

Abstract: An apparatus for providing multiple screens and a method of dynamically configuring multiple screens. The apparatus for providing multiple screens is capable of connecting a plurality of screens to a plurality of output ports so as to dynamically configure the plurality of screens which provide multiple contents on a single physical display device. The apparatus for providing multiple screens includes a service processing module which generates a plurality of screens for displaying received service and an output module which searches an output port connected to the screen.

Abstract translation: 一种用于提供多个屏幕的设备和一种动态配置多个屏幕的方法。 用于提供多个屏幕的设备能够将多个屏幕连接到多个输出端口，以便在单个物理显示设备上动态地配置提供多个内容的多个屏幕。 用于提供多个屏幕的装置包括产生用于显示所接收的服务的多个屏幕的服务处理模块和搜索连接到屏幕的输出端口的输出模块。

公开(公告)号：US07867839B2

公开(公告)日：2011-01-11

申请号：US12176634

申请日：2008-07-21

Applicant: Xiangdong Chen ,  Jong Ho Lee ,  Weipeng Li ,  Dae-Gyu Park ,  Kenneth J. Stein ,  Voon-Yew Thean

Inventor： Xiangdong Chen ,  Jong Ho Lee ,  Weipeng Li ,  Dae-Gyu Park ,  Kenneth J. Stein ,  Voon-Yew Thean

IPC: H01L21/8238

CPC classification number: H01L21/823857 ,  H01L21/2652 ,  H01L21/823807 ,  H01L29/1054

Abstract: Disclosed are embodiments of a p-type, silicon germanium (SiGe), high-k dielectric-metal gate, metal oxide semiconductor field effect transistor (PFET) having an optimal threshold voltage (Vt), a complementary metal oxide semiconductor (CMOS) device that includes the PFET and methods of forming both the PFET alone and the CMOS device. The embodiments incorporate negatively charged ions (e.g., fluorine (F), chlorine (Cl), bromine (Br), iodine (I), etc.) into the high-k gate dielectric material of the PFET only so as to selectively adjust the negative Vt of the PFET (i.e., so as to reduce the negative Vt of the PFET).

Abstract translation: 公开了具有最佳阈值电压（Vt）的p型硅锗（SiGe），高k电介质金属栅极，金属氧化物半导体场效应晶体管（PFET），互补金属氧化物半导体（CMOS）器件 其包括PFET和形成PFET单独和CMOS器件的方法。 实施例将带负电荷的离子（例如，氟（F），氯（Cl），溴（Br），碘（I）等）并入PFET的高k栅介质材料中，以便选择性地调节 PFET的负Vt（即，以减小PFET的负Vt）。

公开(公告)号：US20100331165A1

公开(公告)日：2010-12-30

申请号：US12438608

申请日：2006-12-08

Applicant: Jong-Ho Lee ,  Hae-Weon Lee ,  Joo-Sun Kim ,  Hue-Sup Song ,  Ji-Won Son ,  Hae-Ryoung Kim ,  Sung-Moon Kim ,  Hyoung-Chul Kim ,  Hwa-Young Jung

Inventor： Jong-Ho Lee ,  Hae-Weon Lee ,  Joo-Sun Kim ,  Hue-Sup Song ,  Ji-Won Son ,  Hae-Ryoung Kim ,  Sung-Moon Kim ,  Hyoung-Chul Kim ,  Hwa-Young Jung

IPC: C03C14/00

CPC classification number: H01M8/0282 ,  C03C8/14 ,  C03C8/18 ,  C03C8/24 ,  H01M8/0286 ,  H01M8/2425 ,  H01M8/2432 ,  H01M2008/1293

Abstract: A composite sealant of the present invention increases a fracture toughness of glass which has an excellent gas tightness but has a low fracture resistance, to enhance the thermal cycle stability while maintaining the gas tightness of a stack. For this, alpha-alumina fiber particles, alpha-alumina granular particles, and metallic particles are mixed and added to a glass matrix for remarkably increasing the fracture toughness from 0.5 MPa·m05 to 6 MPa·m°'5 through the multiple effects of crack deflection and crack bridging by the fiber and granular particles, and effects of crack arresting and plastic deformation by the metallic particles. When using the high fracture toughness composite sealant of the present invention, since the gas tightness and the stability of the stack can be maintained even when there is a thermal stress produced by a non-uniform temperature distribution or a thermal cycle condition in the stack, increasing the fracture toughness of the composite sealant works as the most important factor for enhancing the reliability of a large-area stack.

Abstract translation: 本发明的复合密封剂提高了具有优异的气密性但具有低抗断裂性的玻璃的断裂韧性，以提高热循环的稳定性，同时保持了叠层的气密性。 为此，将α-氧化铝纤维颗粒，α-氧化铝颗粒和金属颗粒混合并加入到玻璃基质中，通过多种效应将断裂韧性从0.5MPa·m05显着提高到6MPa·m·5 由纤维和颗粒颗粒引起的裂纹弯曲和裂纹桥接，以及金属颗粒的裂纹阻滞和塑性变形的影响。 当使用本发明的高断裂韧性复合密封剂时，即使当堆叠中存在由不均匀的温度分布或热循环条件产生的热应力时，由于能够保持气密性和堆叠的稳定性， 提高复合密封胶的断裂韧性是提高大面积叠层可靠性的最重要因素。

公开(公告)号：US20100237674A1

公开(公告)日：2010-09-23

申请号：US12305861

申请日：2007-06-20

Applicant: Jong Ho Lee

Inventor： Jong Ho Lee

IPC: A47C7/46

CPC classification number: A47C7/40 ,  A47C7/54

Abstract: A chair with an automatically movable back, having a support, and a seat and a back installed on the support. The chair comprises a base frame coupled to a lower surface of the seat in such a way as to define a space between the base frame and the seat; a horizontal movement frame coupled to an upper surface of the base frame to be moved forwards and rearwards, connected at left and right ends thereof to a back frame which in turn is connected with the back of the chair, and having on a lower surface thereof a follower which receives force required for forward and rearward movement; a vertical movement frame which has an upper surface which is connected to the lower surface of the base frame and a lower surface which is connected to the support, and which is coupled to the support such that the vertical movement frame can slide upwards and downwards with respect to the support; and rotation force generation means installed in the vertical movement frame to transmit rotation force generated by upward and downward movement of the vertical movement frame to the follower such that the horizontal movement frame can be moved forwards and rearwards.

Abstract translation: 具有自动移动的后座椅，具有支撑件的椅子，以及安装在支撑件上的座椅和后背。 椅子包括底座框架，其以这样的方式联接到座椅的下表面，以便在基座框架和座椅之间限定空间; 水平运动框架，其联接到基架的上表面以向前和向后移动，在其左端和右端连接到后框架，后框架又与椅背相连，并且在其下表面上 接收向前和向后运动所需的力的跟随器; 垂直运动框架，其具有连接到基架的下表面的上表面和连接到支撑件的下表面，并且其连接到支撑件，使得垂直运动框架可以向上和向下滑动， 尊重支持; 以及旋转力产生装置，安装在垂直运动框架中，以将由垂直运动框架的向上和向下运动产生的旋转力传递到跟随器，使得水平运动框架能够向前和向后移动。

公开(公告)号：US20100230811A1

公开(公告)日：2010-09-16

申请号：US12722794

申请日：2010-03-12

Applicant: Dong-Kil Shin ,  Shle-Ge Lee ,  Jong-Joo Lee ,  Jong-Ho Lee

Inventor： Dong-Kil Shin ,  Shle-Ge Lee ,  Jong-Joo Lee ,  Jong-Ho Lee

IPC: H01L23/498

CPC classification number: H01L24/13 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/02126 ,  H01L2224/0401 ,  H01L2224/05558 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/1132 ,  H01L2224/1134 ,  H01L2224/11464 ,  H01L2224/13006 ,  H01L2224/13018 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00012

Abstract: In one embodiment, a semiconductor device includes a semiconductor substrate and a bonding pad disposed thereon. The semiconductor device also includes a passivation layer, a buffer layer, and an insulating layer sequentially stacked on the semiconductor substrate. According to one aspect, a first recess is defined within the passivation layer, the buffer layer, and the insulating layer to expose at least a region of the bonding pad and a second recess is defined within the insulating layer to expose at least a region of the buffer layer and spaced apart from the first recess such that a portion of the insulating layer is interposed therebetween. Further, the semiconductor device includes a conductive solder bump disposed within the first and second recesses. The conductive solder bump may be connected to the bonding pad in the first recess and supported by the buffer layer through a protrusion of the conductive solder bump extending into the second recess.

Abstract translation: 在一个实施例中，半导体器件包括半导体衬底和设置在其上的接合焊盘。 半导体器件还包括依次堆叠在半导体衬底上的钝化层，缓冲层和绝缘层。 根据一个方面，在钝化层，缓冲层和绝缘层内限定第一凹槽，以露出焊盘的至少一个区域，并且在绝缘层内限定第二凹槽，以暴露至少一个区域 缓冲层，并且与第一凹部间隔开，使得绝缘层的一部分插入其间。 此外，半导体器件包括设置在第一和第二凹槽内的导电焊料凸块。 导电焊料凸块可以连接到第一凹槽中的焊盘，并且通过延伸到第二凹部中的导电焊料凸块的突起被缓冲层支撑。

公开(公告)号：US07789999B2

公开(公告)日：2010-09-07

申请号：US12530189

申请日：2009-01-22

Applicant: Jong Ho Lee

Inventor： Jong Ho Lee

IPC: C10B51/00

CPC classification number: F23G5/0273 ,  F23G5/46 ,  F23G5/50 ,  F23G2207/101 ,  F23G2207/102 ,  F23J15/06 ,  Y02E20/363 ,  Y02P80/152

Abstract: Described is a thermal decomposition treatment system and method of using the thermal decomposition treatment system wherein flammable waste is inputted into a trash burner which is shielded from air or gas and the waste is thermally decomposed and carbonized. The thermal decomposition treatment chamber includes a plurality of heating tubes wherein the flammable waste is inputted into the chambers while hot air is passed through the heating tubes which indirectly heats the flammable waste in an anaerobic environment the resulting gases are purified, recovered and reused.

Abstract translation: 描述了使用热分解处理系统的热分解处理系统和方法，其中将易燃废物输入到避免空气或气体的垃圾燃烧器中，并且废物被热分解和碳化。 热分解处理室包括多个加热管，其中将可燃废物输入到室中，同时热空气通过加热管，间接加热在厌氧环境中的可燃废物，所得气体被净化，回收和再利用。

公开(公告)号：US07745907B2

公开(公告)日：2010-06-29

申请号：US11764072

申请日：2007-06-15

Applicant: Jong-Ho Lee ,  Young-Lyong Kim

Inventor： Jong-Ho Lee ,  Young-Lyong Kim

IPC: H01L29/40

CPC classification number: H01L23/3128 ,  H01L21/563 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/06 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/31 ,  H01L24/90 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05568 ,  H01L2224/06136 ,  H01L2224/11332 ,  H01L2224/13099 ,  H01L2224/16105 ,  H01L2224/16108 ,  H01L2224/16237 ,  H01L2224/73203 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/90 ,  H01L2224/9202 ,  H01L2924/0002 ,  H01L2924/01021 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/3025 ,  H01L2224/05552

Abstract: A semiconductor package and a method of fabricating the same are provided. The semiconductor package includes a semiconductor chip and a circuit board. The semiconductor chip has a bond pad. The circuit board has a base substrate with a throughole, and a conductive film pattern placed on a sidewall of the throughole. The throughole is aligned with the bond pad to expose the bond pad. A connector located within the throughole electrically connects the conductive film pattern to the bond pad. A sealing layer covers the connector.

Abstract translation: 提供半导体封装及其制造方法。 半导体封装包括半导体芯片和电路板。 半导体芯片具有接合焊盘。 电路板具有带有通孔的基底基板和位于通孔的侧壁上的导电膜图案。 通孔与接合焊盘对准以暴露接合焊盘。 位于通孔内的连接器将导电膜图案电连接到接合垫。 密封层覆盖连接器。

公开(公告)号：US07687376B2

公开(公告)日：2010-03-30

申请号：US11697537

申请日：2007-04-06

Applicant: Pun Jae Choi ,  Jong Ho Lee

Inventor： Pun Jae Choi ,  Jong Ho Lee

IPC: H01L21/20

CPC classification number: H01L33/0079 ,  H01L33/0075 ,  H01L33/22

Abstract: A method of manufacturing a vertical GaN-based LED comprises preparing an n-type GaN substrate; sequentially forming an active layer and a p-type nitride semiconductor layer on the n-type GaN substrate through an epitaxial growth method; forming a p-electrode on the p-type nitride semiconductor layer; wet-etching the lower surface of the n-type GaN substrate so as to reduce the thickness of the n-type GaN substrate; forming a flat n-type bonding pad on the wet-etched lower surface of the n-type GaN substrate, the n-type bonding pad defining an n-electrode formation region; and forming an n-electrode on the n-type bonding pad.

Abstract translation: 制造垂直GaN基LED的方法包括制备n型GaN衬底; 通过外延生长法在n型GaN衬底上依次形成有源层和p型氮化物半导体层; 在p型氮化物半导体层上形成p电极; 湿式蚀刻n型GaN衬底的下表面以减小n型GaN衬底的厚度; 在n型GaN衬底的湿蚀刻下表面上形成平坦的n型焊盘，n型焊盘限定n电极形成区域; 在n型接合焊盘上形成n电极。

公开(公告)号：US20100006415A1

公开(公告)日：2010-01-14

申请号：US12530189

申请日：2009-01-22

Applicant: Jong Ho Lee

Inventor： Jong Ho Lee

IPC: C10B47/10

CPC classification number: F23G5/0273 ,  F23G5/46 ,  F23G5/50 ,  F23G2207/101 ,  F23G2207/102 ,  F23J15/06 ,  Y02E20/363 ,  Y02P80/152

Abstract: The present invention relates to a system for treating flammable wastes and a method for treating the same, and more particularly, to a thermal decomposition treatment system of the flammable waste and a waste treatment method of the waste using the same through which the flammable waste inputted into a trash burner is shielded from air or gas and the waste is thermally decomposed and carbonated through a indirect heating by a heating tube for combustible gas to be extracted and recovered for a reuse without emitting contaminated gas, etc. The thermal decomposition treatment system according to the present invention includes a trash burner including a thermal decomposition chamber, a combustion chamber, and a cooling water chamber; a water vapor generator which is communicated to the thermal decomposition chamber through the water vapor supply tube and into which over heated water vapor is forced to be inputted; a cooling unit which is communicated to the cooling water chamber through a cooling water input tube and a cooling water discharging tube, and the cooling water is provided and circulated through this configuration; a purifier which is communicated to the thermal decomposition chamber through the gas discharging tube, and poisonous gases contained in rare gases and combustible gas are removed through this configuration; a combustible gas storage reservoir which is communicated to the purifier through a gas transfer tube and stores the purified combustible gas, and allows some of it to be inputted into the combustion chamber through a gas circulation tube; and a cooling tower which is communicated to a waste heat recovery tube connected to the heating tube and which collects high temperature air passed therethrough, and allows the high temperature air to be cooled and discharged to atmosphere.

Abstract translation: 本发明涉及一种用于处理易燃废物的系统及其处理方法，更具体地涉及一种易燃废物的热分解处理系统和使用该废物的废物处理方法，通过该废物处理方法输入了易燃废物 垃圾燃烧器与空气或气体隔绝，并且通过用于可燃气体的加热管的间接加热而将废物热分解和碳酸化以提取和回收以再利用而不发生污染气体等。热分解处理系统 本发明包括一种包括热分解室，燃烧室和冷却水室的垃圾燃烧器; 水蒸汽发生器，其通过水蒸气供给管连通到热分解室，并且强制输入过热水蒸汽; 冷却单元，其通过冷却水输入管和冷却水排出管与冷却水室连通，并且通过该构造设置并循环冷却水; 通过气体排出管与热分解室连通的净化器，通过该结构除去稀有气体和可燃性气体中含有的有害气体; 一个可燃气体储存容器，通过气体输送管与净化器连通并储存纯化的可燃气体，并允许其中的一些通过气体循环管道输入燃烧室; 以及冷却塔，其与连接到加热管的废热回收管连通并且收集通过其的高温空气，并且允许高温空气被冷却并排放到大气中。

公开(公告)号：US07586159B2

公开(公告)日：2009-09-08

申请号：US11723705

申请日：2007-03-21

Applicant: Jong-Ho Lee ,  Ho-Kyu Kang ,  Yun-Seok Kim ,  Seok-Joo Doh ,  Hyung-Suk Jung

Inventor： Jong-Ho Lee ,  Ho-Kyu Kang ,  Yun-Seok Kim ,  Seok-Joo Doh ,  Hyung-Suk Jung

IPC: H01L29/94

CPC classification number: H01L21/823857 ,  H01L27/0922

Abstract: A semiconductor device includes first and second transistor devices. The first device includes a first substrate region, a first gate electrode, and a first gate dielectric. The first gate dielectric is located between the first substrate region and the first gate electrode. The second device includes a second substrate region, a second gate electrode, and a second gate dielectric. The second gate dielectric is located between the second substrate region and the second gate electrode. The first gate dielectric includes a first high-k layer having a dielectric constant of 8 or more. Likewise, the second gate dielectric includes a second high-k layer having a dielectric constant of 8 or more. The second high-k layer has a different material composition than the first high-k layer.

Abstract translation: 半导体器件包括第一和第二晶体管器件。 第一器件包括第一衬底区域，第一栅极电极和第一栅极电介质。 第一栅极电介质位于第一衬底区域和第一栅电极之间。 第二器件包括第二衬底区域，第二栅极电极和第二栅极电介质。 第二栅极电介质位于第二基板区域和第二栅极电极之间。 第一栅极电介质包括介电常数为8以上的第一高k层。 类似地，第二栅极电介质包括介电常数为8或更大的第二高k层。 第二高k层具有与第一高k层不同的材料组成。