High voltage driving electronic circuit arrangement having a short circuit protection, corresponding apparatus and method

    公开(公告)号:US11264982B2

    公开(公告)日:2022-03-01

    申请号:US15944377

    申请日:2018-04-03

    Abstract: A high voltage driving circuit for driving a load receives a low voltage input signal and generates a high voltage output signal. A short circuit protection circuit including a first electronic switch operated by the low voltage input signal and a second electronic switch operated by a low voltage signal obtained by a voltage division of the output high voltage signal. The first electronic switch causing a first pull-up current to be sent to a capacitive element whose voltage controls an input of a threshold comparator. A second electronic switch causes a second pull-down current to be drawn from the capacitive element whose voltage controls the input of the threshold comparator. A short circuit detection signal is generated at an output of said threshold comparator, indicating a short circuit and capable of inhibiting operation of the driving circuit.

    MOSFET device with shielding region and manufacturing method thereof

    公开(公告)号:US11251296B2

    公开(公告)日:2022-02-15

    申请号:US16528410

    申请日:2019-07-31

    Abstract: A MOSFET device comprising: a structural region, made of a semiconductor material having a first type of conductivity, which extends between a first side and a second side opposite to the first side along an axis; a body region, having a second type of conductivity opposite to the first type, which extends in the structural region starting from the first side; a source region, having the first type of conductivity, which extends in the body region starting from the first side; a gate region, which extends in the structural region starting from the first side, traversing entirely the body region; and a shielding region, having the second type of conductivity, which extends in the structural region between the gate region and the second side. The shielding region is an implanted region self-aligned, in top view, to the gate region.

    Integrated circuit and related audio amplifier

    公开(公告)号:US11245369B2

    公开(公告)日:2022-02-08

    申请号:US16935649

    申请日:2020-07-22

    Abstract: An integrated circuit includes a die that includes a circuit configured to generate a PWM signal in response to a first clock signal, and a first set of pads configured to provide amplified PWM signals to external filters. An amplifier stage is configured to provide the amplified PWM signals. The die includes two pads configured to be coupled to an external inductor, and a second set of pads configured to provide regulated voltages. An electronic converter circuit is configured to generate the regulated voltages to supply the amplifier stage. The electronic converter circuit includes a control circuit configured to drive electronic switches in response to a second clock signal to regulate the regulated voltages to a respective target value. The die includes a control block to synchronize the switching activity of the electronic switches with the switching activity of the amplifier stage.

    Apparatus and methods for G3-PLC bootstrap in a hybrid network

    公开(公告)号:US11233540B2

    公开(公告)日:2022-01-25

    申请号:US17210135

    申请日:2021-03-23

    Abstract: An embodiment method implemented by an agent device comprises receiving, by the agent device, from a device, a bootstrap request message over a first communication channel; transmitting, by the agent device, to a coordinating device, a request message comprising the bootstrap request message and a first channel type indicator indicating a channel type of the first communication channel; receiving, by the agent device, from the coordinating device, a response message comprising a bootstrap response message and a second channel type indicator indicating the channel type of the first communication channel; and transmitting, by the agent device, to a device, the bootstrap response message over a second communication channel in accordance with the second channel type indicator.

    Processing of electrophysiological signals

    公开(公告)号:US11229404B2

    公开(公告)日:2022-01-25

    申请号:US16195114

    申请日:2018-11-19

    Abstract: Blood pressure signals are reconstructed from PhotoPlethysmoGraphy (PPG) signals by: receiving PPG signals including systolic, diastolic and dicrotic phases; and determining first and second derivatives of the PPG signals and: a first set of values indicative of lengths of the signal paths of the PPG signal, the first derivative and the second derivative thereof in the systolic, diastolic and dicrotic phases; a second set of values indicative of relative durations of the PPG signal and the first and second derivatives thereof in the systolic, diastolic and dicrotic phases; and a third set of values indicative of the time separation of peaks and/or valleys in subsequent waveforms of the PPG signal. Reconstruction also includes applying artificial neural network processing to the first, second and third set of values. The artificial neural network processing includes artificial neural network training as a function of blood pressure signals to produce reconstructed blood pressure signals.

    WIDE BAND GAP SEMICONDUCTOR ELECTRONIC DEVICE HAVING A JUNCTION-BARRIER SCHOTTKY DIODE

    公开(公告)号:US20220020884A1

    公开(公告)日:2022-01-20

    申请号:US17370886

    申请日:2021-07-08

    Inventor: Simone RASCUNÁ

    Abstract: The vertical-conduction electronic power device is formed by a body of wide band gap semiconductor which has a first conductivity type and has a surface, and is formed by a drift region and by a plurality of surface portions delimited by the surface. The electronic device is further formed by a plurality of first implanted regions having a second conductivity type, which extend into the drift region from the surface, and by a plurality of metal portions, which are arranged on the surface. Each metal portion is in Schottky contact with a respective surface portion of the plurality of surface portions so as to form a plurality of Schottky diodes formed by first Schottky diodes and second Schottky diodes, wherein the first Schottky diodes have, at equilibrium, a Schottky barrier having a height different from that of the second Schottky diodes.

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