Abstract:
An ion-implantation machine has an implantation chamber with a vent inlet; a vacuum pump is connected to the implantation chamber through a vacuum valve. A pipe connects the vent inlet of the implantation chamber to a source of a fluid containing oxygen. The fluid containing oxygen is preferably environmental air. A flow-rate control valve is arranged on the pipe and is activated only after closing the vacuum valve.
Abstract:
A micro-electro-mechanical device formed by a body of semiconductor material having a thickness and defining a mobile part and a fixed part. The mobile part is formed by a mobile platform, supporting arms extending from the mobile platform to the fixed part, and by mobile electrodes fixed to the mobile platform. The fixed part has fixed electrodes facing the mobile electrodes, a first biasing region fixed to the fixed electrodes, a second biasing region fixed to the supporting arms, and an insulation region of insulating material extending through the entire thickness of the body. The insulation region insulates electrically at least one between the first and the second biasing regions from the rest of the fixed part.
Abstract:
The program to be executed is compiled by translating it into native instructions of the instruction-set architecture of the processor system, organizing the instructions deriving from the translation of the program into respective bundles in an order of successive bundles, each bundle grouping together instructions adapted to be executed in parallel by the processor system. The bundles of instructions are ordered into respective sub-bundles, said sub-bundles identifying a first set of instructions, which must be executed before the instructions belonging to the next bundle of said order, and a second set of instructions, which can be executed both before and in parallel with respect to the instructions belonging to said subsequent bundle of said order. There is defined a sequence of execution of the instructions in successive operating cycles of the processor system, assigning each sub-bundle to an operating cycle, thus preventing simultaneous assignment to the same operating cycle of two sub-bundles belonging to the first set of two successive bundles. The instructions of the sequence may be executed by the various processors of the system in conditions of binary compatibility.
Abstract:
The cells of the stacked type each comprise a MOS transistor formed in an active region of a substrate of semiconductor material and a capacitor formed above the active region; each MOS transistor has a first and a second conductive region and a control electrode and each capacitor has a first and a second plate separated by a dielectric region material, for example, ferroelectric one. The first conductive region of each MOS transistor is connected to the first plate of a respective capacitor, the second conductive region of each MOS transistor is connected to a respective bit line, the control electrode of each MOS transistor is connected to a respective word line, the second plate of each capacitor is connected to a respective plate line. The plate lines run perpendicular to the bit line and parallel to the word lines. At least two cells adjacent in a parallel direction to the bit lines share the same dielectric region material and the same plate line. In this way, the manufacturing process is not critical and the size of the cells is minimal.
Abstract:
The timing system includes a plurality of timing units interconnected to perform a count operation. Software programmable registers interconnect the plurality of timing units, and a control circuit generates a clock signal for the plurality of timing units. The control circuit includes an interface for connection to an external bus to receive and transmit data.
Abstract:
A method of driving an electrical load having a complex electrical impedance, such as a voice-coil motor controlling the position of a read/write head in a data storage disk drive system, comprises providing a voltage-mode driver generating drive signals for the electrical load in response to drive commands. Compensated commands for the voltage-mode driver are generated filtering the drive commands, compensating for a phase shift between electrical quantities delivered to the electrical load. The voltage-mode drive thus emulates a conventional, but more expensive, current-mode drive. In a preferred embodiment, the method comprises estimating characteristic parameters of the electrical load during the operation, and adapting the filtering to the estimated characteristic parameters. The estimation comprises implementing a Kalman filtering algorithm, particularly an extended Kalman filtering.
Abstract:
The present invention relates to a driving method for flat panel display devices, particularly a driving method combining a Multi Line Addressing (MLA) technique and a Frame Rate Control (FRC) technique, for flat panel display devices such as Liquid Crystal Display (LCD). In an embodiment the method of driving an image display device comprises the following steps: dividing row electrodes of an image device, having a plurality of row electrodes and a plurality of column electrodes, into a plurality of subgroups; selecting one of the plurality of said subgroups having a prefixed number of electrodes; performing a gray scale display by a frame rate control (FRC) by using a prefixed number of frames and a prefixed number of bits representing the gray levels; decomposing one of said frame in a number of time instants proportional to said prefixed number of electrodes; putting the bits representing the gray levels equally distributed in said prefixed number of frames.
Abstract:
A read/write assembly for magnetic hard disks includes at least: one supporting element; one read/write (R/W) transducer; one micro-actuator, set between the R/W transducer and the supporting element; one electrical-connection structure for connection to a remote device carried by the supporting element and connected to the R/W transducer and to the micro-actuator. In addition, a protective structure, set so as to cover the micro-actuator is made of a single piece with the electrical-connection structure.
Abstract:
MOS-gated power device including a plurality of elementary functional units, each elementary functional unit including a body region of a first conductivity type formed in a semiconductor material layer of a second conductivity type. A plurality of doped regions of a first conductivity type is formed in the semiconductor material layer, each one of the doped regions being disposed under a respective body region and being separated from other doped regions by portions of the semiconductor material layer.
Abstract:
The invention provides a protocol cycle during which a memory address and all the data bytes to be written are transmitted, and the writing process is carried out only once for all the transmitted data bytes, by writing a first byte in the memory sector corresponding to a first address generated by resetting to zero the 2 least significant bits of the transmitted address and all the other transmitted bytes in successive addresses. The method includes writing a certain number N of data bytes, in consecutive memory addresses in a memory array of a memory device, and includes unprotecting the memory sectors in which data are to be written, communicating the programming command to the memory device, communicating to the memory device the bits to be stored and specifying a relative memory address of a sector to write in, and writing the data bits in the memory.