公开(公告)号：US11551735B2

公开(公告)日：2023-01-10

申请号：US15555470

申请日：2016-03-11

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Ely Tsern ,  John Eric Linstadt

IPC: G11C11/00 ,  G11C5/04 ,  G11C5/06 ,  G06F3/06 ,  G06F11/10 ,  G11C7/10 ,  G11C7/12

Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, a memory module includes a pin interface for coupling to a memory controller via a bus. The module includes at least two non-volatile memory devices, and a buffer disposed between the pin interface and the at least two non-volatile memory devices. The buffer receives non-volatile memory access commands from the memory controller that are interleaved with DRAM memory module access commands.

公开(公告)号：US20220350763A1

公开(公告)日：2022-11-03

申请号：US17748762

申请日：2022-05-19

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Ely Tsern ,  John Eric Linstadt ,  Thomas J. Giovannini ,  Kenneth L. Wright

IPC: G06F13/28 ,  G11C5/04 ,  G11C7/10 ,  G06F13/16

Abstract: The embodiments described herein describe technologies of dynamic random access memory (DRAM) components for high-performance, high-capacity registered memory modules, such as registered dual in-line memory modules (RDIMMs). One DRAM component may include a set of memory cells and steering logic. The steering logic may include a first data interface and a second data interface. The first and second data interfaces are selectively coupled to a controller component in a first mode and the first data interface is selectively coupled to the controller component in a second mode and the second data interface is selectively coupled to a second DRAM component in the second mode.

公开(公告)号：US20220345155A1

公开(公告)日：2022-10-27

申请号：US17744311

申请日：2022-05-13

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt

IPC: H03M13/05 ,  G06F13/16 ,  G06F3/06 ,  G06F11/10

Abstract: Memory controllers, devices and associated methods are disclosed. In one embodiment, a memory controller includes write circuitry to transmit write data to a memory device, the write circuitry includes a write error detection correction (EDC) encoder to generate first error information associated with the write data. Data bus inversion (DBI) circuitry conditionally inverts data bits associated with each of the write data words based on threshold criteria. Read circuitry receives read data from the memory device. The read circuitry includes a read EDC encoder to generate second error information associated with the received read data. Logic evaluates the first and second error information and conditionally reverse-inverts at least a portion of the read data based on the decoding.

公开(公告)号：US20220300441A1

公开(公告)日：2022-09-22

申请号：US17715404

申请日：2022-04-07

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Brent Haukness

IPC: G06F13/16

Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, a memory controller is disclosed. The memory controller includes write queue logic that has first storage to temporarily store signal components of a write operation. The signal components include an address and write data. A transfer interface issues the signal components of the write operation to a bank of a storage class memory (SCM) device and generates a time value. The time value represents a minimum time interval after which a subsequent write operation can be issued to the bank. The write queue logic includes an issue queue to store the address and the time value for a duration corresponding to the time value.

公开(公告)号：US20220276956A1

公开(公告)日：2022-09-01

申请号：US17673277

申请日：2022-02-16

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Craig E. Hampel

IPC: G06F12/02

Abstract: Improvements are disclosed for “leveling” or averaging out more evenly the number of activate/precharge cycles seen by the rows of a memory component, so that one or more particular rows are not excessively stressed (relative to the other rows). In one embodiment, a memory controller includes remapping facilities arranged to move data stored in a physical row from RPK to RPK′ and modify the mapping from logical row RLK while minimizing impact on normal read/write operations. Remapping operations may be scheduled relative to refresh or other maintenance operations. Remapping operations may be conditionally deferred so as to minimize performance impact.

公开(公告)号：US20220262410A1

公开(公告)日：2022-08-18

申请号：US17665738

申请日：2022-02-07

Applicant: Rambus Inc.

Inventor： Frederick A. Ware

IPC: G11C7/10

Abstract: A lateral transfer path within an adjustable-width signaling interface of an integrated circuit component is formed by a chain of logic segments that may be intercoupled in different groups to effect the lateral data transfer required in different interface width configurations, avoiding the need for a dedicated transfer path per width configuration and thereby substantially reducing number of interconnects (and thus the area) required to implement the lateral transfer structure.

公开(公告)号：US11385959B2

公开(公告)日：2022-07-12

申请号：US16872929

申请日：2020-05-12

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Ely Tsern

IPC: G06F11/00 ,  G06F11/10 ,  G06F11/16 ,  G11C29/42 ,  G11C29/44 ,  G11C7/10 ,  G11C29/52 ,  G11C29/00 ,  H03M13/15 ,  G06F11/20

Abstract: A memory module is disclosed that includes a substrate, a memory device that outputs read data, and a buffer. The buffer has a primary interface for transferring the read data to a memory controller and a secondary interface coupled to the memory device to receive the read data. The buffer includes error logic to identify an error in the received read data and to identify a storage cell location in the memory device associated with the error. Repair logic maps a replacement storage element as a substitute storage element for the storage cell location associated with the error.

公开(公告)号：US20220214940A1

公开(公告)日：2022-07-07

申请号：US17585654

申请日：2022-01-27

Applicant: Rambus Inc.

Inventor： Frederick A. Ware

IPC: G06F11/10 ,  G06F11/07 ,  G06F11/30 ,  G06F12/02 ,  G06F12/0882

Abstract: A hybrid volatile/non-volatile memory employs a relatively fast, durable, and expensive dynamic, random-access memory (DRAM) cache to store a subset of data from a larger amount of relatively slow and inexpensive nonvolatile memory (NVM). The memory supports error-detection and correction (EDC) techniques by allocating a fraction of DRAM storage to information calculated for each unit of stored data that can be used to detect and correct errors. An interface between the DRAM cache and NVM executes a wear-leveling scheme that aggregates and distributes NVM data and EDC write operations in a manner that prolongs service life.

公开(公告)号：US20220164305A1

公开(公告)日：2022-05-26

申请号：US17540909

申请日：2021-12-02

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Kishore Kasamsetty

IPC: G06F13/40 ,  G06F12/02 ,  G06F13/16 ,  G06F12/00 ,  G06F3/06 ,  G06F13/42 ,  G11C5/02

Abstract: A multi-chip package includes a logic integrated circuit (IC) die formed with plural memory controller circuits, a first memory IC die and a second memory IC die. The second memory IC die is mounted to the first memory IC die. The first memory IC die and the logic IC die are mounted to one another. The logic IC die includes a serial link interface for coupling to multiple serial links. The first memory die includes a first memory group accessed by a first one of the plural memory controller circuits, and a second memory group accessed by a second one of the plural memory controller circuits.

公开(公告)号：US11327831B2

公开(公告)日：2022-05-10

申请号：US16832263

申请日：2020-03-27

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John E. Linstadt ,  Liji Gopalakrishnan

IPC: G06F11/10 ,  G06F3/06

Abstract: A memory system employs an addressing scheme to logically divide rows of memory cells into separate contiguous regions, one for data storage and another for error detection and correction (EDC) codes corresponding to that data. Data and corresponding EDC codes are stored in the same row of the same bank. Accessing data and corresponding EDC code in the same row of the same bank advantageously saves power and avoids bank conflicts. The addressing scheme partitions the memory without requiring the requesting processor to have an understanding of the memory partition.