公开(公告)号：US11581401B2

公开(公告)日：2023-02-14

申请号：US17370397

申请日：2021-07-08

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Pascal Fornara

IPC: H01L29/00 ,  H01L29/04 ,  H01L29/66 ,  H01L29/861 ,  H01L29/868

Abstract: A diode is formed by a polycrystalline silicon bar which includes a first doped region with a first conductivity type, a second doped region with a second conductivity type and an intrinsic region between the first and second doped regions. A conductive layer extends parallel to the polycrystalline silicon bar and separated from the polycrystalline silicon bar by a dielectric layer. The conductive layer is configured to be biased by a bias voltage.

公开(公告)号：US11575254B2

公开(公告)日：2023-02-07

申请号：US17095652

申请日：2020-11-11

Applicant: STMicroelectronics International N.V. ,  STMicroelectronics (Rousset) SAS

Inventor： Manoj Kumar ,  Ravinder Kumar ,  Nicolas Demange

IPC: H02H3/20 ,  H02H1/00

Abstract: An integrated circuit includes an overvoltage protection circuit. The overvoltage protection circuit detects overvoltage events at a pad of the integrated circuit. The overvoltage protection circuit generates a max voltage signal that is the greater of the voltage at the pad and a supply voltage of the integrated circuit. The overvoltage protection circuit disables a PMOS transistor coupled to the pad by supplying the max voltage signal to the gate of the PMOS transistor when an overvoltage event is present at the pad.

公开(公告)号：US11562933B2

公开(公告)日：2023-01-24

申请号：US16800448

申请日：2020-02-25

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Alexandre Sarafianos ,  Abderrezak Marzaki

IPC: H01L21/66 ,  H01L23/00 ,  H03K19/00 ,  H01L29/00

Abstract: A semiconductor substrate includes a buried semiconductor layer and semiconductor wells. A device for detecting a possible thinning of the semiconductor substrate via the rear face thereof is formed on and in the semiconductor wells. The device is a non-inverting buffer including an input terminal and an output terminal, the device being powered between a supply terminal and a reference terminal where the buried semiconductor layer provides the supply terminal. A control circuit delivers an input signal in a first state to the input terminal and outputs a control signal indicating a detection of a thinning of the substrate if a signal generated at the output terminal in response to the input signal is in a second state different from the first state.

公开(公告)号：US20230018738A1

公开(公告)日：2023-01-19

申请号：US17812122

申请日：2022-07-12

Applicant: STMicroelectronics (Rousset) SAS ,  STMicroelectronics International N.V.

Inventor： Francesco La Rosa ,  Marco Bildgen

IPC: G11C16/04 ,  H01L27/11524 ,  G11C16/08 ,  G11C16/10 ,  G11C16/26

Abstract: In an embodiment a noon-volatile memory device includes a memory plane including at least one memory area including an array of memory cells having two rows and N columns, wherein each memory cell comprises a state transistor having a control gate and a floating gate selectable by a vertical selection transistor buried in a substrate and including a buried selection gate, and wherein each column of memory cells includes a pair of twin memory cells, two selection transistors of the pair of twin memory cells having a common selection gate and a processor configured to store in the memory area information including a succession of N bits so that, with exception of the last bit of the succession, a current bit of the succession is stored in two memory cells located on the same row and on two adjacent columns and a current bit and the following bit are respectively stored in two twin cells.

公开(公告)号：US11550749B2

公开(公告)日：2023-01-10

申请号：US17143679

申请日：2021-01-07

Applicant: STMicroelectronics International N.V. ,  STMicroelectronics (Rousset) SAS

Inventor： Manoj Kumar ,  Kailash Kumar ,  Nicolas Demange

IPC: G06F13/42 ,  G06F1/06

Abstract: A serial peripheral interface (SPI) device includes a serial clock (SCK) pad receiving a serial clock, first and second Schmitt triggers directly electrically connected to the SCK pad to selectively respectively generate first and second clocks in response to rising and falling edges of the serial clock, first and second flip flops clocked by the first and second clocks to output bits of data to a data node, a multiplexer having an input coupled to the data node and an output coupled to driving circuitry, and driving circuitry transmitting data via a master-in-slave-out (MISO) pad.

公开(公告)号：US11546177B2

公开(公告)日：2023-01-03

申请号：US16784495

申请日：2020-02-07

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Francesco La Rosa

IPC: H04L29/06 ,  H04L9/32 ,  G11C16/04 ,  G11C16/10 ,  G11C16/28 ,  G11C16/30 ,  H04L9/06

Abstract: In accordance with an embodiment, a physically unclonable function device includes a set of floating gate transistor pairs, floating gate transistors of the set of floating gate transistor pairs having a randomly distributed effective threshold voltage belonging to a common random distribution; a differential read circuit configured to measure a threshold difference between the effective threshold voltages of floating gate transistors of floating gate transistor pairs of the set of floating gate transistor pairs, and to identify a floating gate transistor pair in which the measured threshold difference is smaller than a margin value as being an unreliable floating gate transistor pair; and a write circuit configured to shift the effective threshold voltage of a floating gate transistor of the unreliable floating gate transistor pair to be inside the common random distribution.

公开(公告)号：US20220416845A1

公开(公告)日：2022-12-29

申请号：US17845368

申请日：2022-06-21

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Hugues CREUSY

IPC: H04B5/00 ,  H01Q7/00 ,  H02J50/27 ,  H02J50/23

Abstract: An antenna configured for near field communication includes a first coil for transmitting and receiving signals having a first frequency and a second coil for transmitting and receiving signals having a second frequency greater than at least twice the first frequency. The first and second coils are magnetically coupled with a coupling coefficient greater than 0.5.

公开(公告)号：US11537833B2

公开(公告)日：2022-12-27

申请号：US17492839

申请日：2021-10-04

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Julien Mercier

IPC: G06K19/07

Abstract: A first element and a second element of a same device communicate with each other. The first element sends the second element a first piece of information representative of energy supplied by an electromagnetic field supplying power the device. The second element adapts its operating frequency as a function of the first piece of information.

公开(公告)号：US20220406668A1

公开(公告)日：2022-12-22

申请号：US17839976

申请日：2022-06-14

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Francois TAILLIET

IPC: H01L21/66 ,  H01L23/58 ,  H01L23/00

Abstract: An electronic chip includes a seal ring whose shape is contained within a rectangle, of a width equal to a maximum width of the electronic chip and a length equal to a maximum length of the electronic chip. At least one test pad is arranged at least partially within the rectangle. The test pad is shared with at least one other adjacent electronic chip.

公开(公告)号：US11533081B2

公开(公告)日：2022-12-20

申请号：US17229337

申请日：2021-04-13

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Alexandre Tramoni ,  Pierre Rizzo ,  Guillaume Jaunet

IPC: H04B5/00 ,  G06K7/10 ,  H04B5/02 ,  H04W52/02

Abstract: In accordance with an embodiment, a method includes: transmitting, by a first near-field communication (NFC) device, a field emission burst; comparing a characteristic property of a signal of the field emission burst to a detection threshold; determining a presence of a detection error based on the comparing; and adjusting the detection threshold based on a number of determined detection errors.