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公开(公告)号:US20240359973A1
公开(公告)日:2024-10-31
申请号:US18028567
申请日:2022-04-27
Inventor: Yingli SHI , Chao ZHOU , Yanzhao LI
CPC classification number: B81B7/02 , B81C1/00142 , H01H59/0009 , H01P1/122 , B81B2201/01 , B81B2203/0109 , B81B2203/0323 , B81B2203/0353 , B81C2201/0105
Abstract: A MEMS switch, a preparation method thereof, and an electronic apparatus. The MEMS switch includes: a substrate, a coplanar waveguide line structure disposed on a side of the substrate, an isolation structure disposed on a side of the coplanar waveguide line structure away from the substrate, a film bridge disposed on a side of the isolation structure away from the substrate. The coplanar waveguide line structure includes a first wire, a first DC bias line, a second wire, a second DC bias line and a third wire arranged at intervals sequentially. The second wire is one of an RF signal transmission line and a ground line, the first wire and the third wire are the other of the RF signal transmission line and the ground line. The film bridge is crossed between the first wire and third wire, and is connected with the first wire and the third wire respectively.
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公开(公告)号:US20240359972A1
公开(公告)日:2024-10-31
申请号:US18766713
申请日:2024-07-09
Applicant: Beijing BOE Sensor Technology Co., Ltd. , BOE Technology Group Co., Ltd. , Beijing BOE Technology Development Co., Ltd.
Inventor: Lihui WANG , Yue LI , Qiuxu WEI , Weilong GUO , Wenbo CHANG , Taonan ZHANG , Jie SUN , Nana HE , Yanfei REN , Feng QU
IPC: B81B7/00
CPC classification number: B81B7/0045 , B81B2201/0264 , B81B2207/096 , B81B2207/11
Abstract: Provided is a package structure, including: an insulating dielectric layer having a first surface and a second surface opposite to each other, wherein at least one first accommodation space running from the first surface to the second surface is formed in the insulating dielectric layer; and at least one conductive post in one-to-one correspondence with the at least one first accommodation space, wherein the conductive post is within the corresponding first accommodation space, a material of the conductive post comprises a non-metallic conductive material, and an absolute value of a difference between a thermal expansion coefficient of the conductive post and a thermal expansion coefficient of the insulating dielectric layer is less than or equal to 8×10−6/° C.; wherein the at least one conductive post comprises at least one first conductive post, two end faces of the first conductive post are flush with the first surface and the second surface, respectively.
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33.
公开(公告)号:US12131700B2
公开(公告)日:2024-10-29
申请号:US17792755
申请日:2021-08-30
Inventor: Tuo Sun , Ying Zhou , Yichi Zhang
IPC: G09G3/32 , G09G3/3233 , H10K59/121 , H10K59/131
CPC classification number: G09G3/3233 , G09G3/32 , G09G2300/0426 , G09G2300/0439 , G09G2330/021 , H10K59/121 , H10K59/131
Abstract: The pixel circuit includes a first driving circuit, a first light emitting device, a second light emitting device and a second driving circuit that are sequentially connected in series; first driving circuit includes a first driving transistor, a source electrode of first driving transistor is connected to a first power-supply terminal, and a drain electrode of first driving transistor is connected to a first electrode of first light emitting device; second driving circuit includes a second driving transistor, a source electrode of second driving transistor is connected to a second power-supply terminal, and a drain electrode of second driving transistor is connected to a first electrode of second light emitting device; a second electrode of first light emitting device is connected to a second electrode of second light emitting device; and a channel type of first driving transistor and a channel type of second driving transistor are different.
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公开(公告)号:US20240357855A1
公开(公告)日:2024-10-24
申请号:US18028558
申请日:2022-04-24
Inventor: Jingwen FENG
IPC: H10K50/852 , H10K50/115 , H10K50/818 , H10K50/828
CPC classification number: H10K50/852 , H10K50/115 , H10K50/818 , H10K50/828
Abstract: The present disclosure provides a quantum dot light emitting diode, includes a first electrode, a second electrode and a quantum dot light emitting layer between the first electrode and the second electrode, where one of the first electrode and the second electrode is a reflective electrode, and the other is a transmissive electrode or a transflective electrode; at least one optical adjustment layer is arranged between the first electrode and the second electrode, each optical adjustment layer forms a microcavity structure with the reflective electrode, and light extraction efficiency P of the quantum dot light emitting diode satisfies 25%≤P≤98%. An embodiment of the present disclosure further provides a method of manufacturing a quantum dot light emitting diode and a display panel.
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公开(公告)号:US20240351026A1
公开(公告)日:2024-10-24
申请号:US18039220
申请日:2022-03-25
Inventor: Xiangguo MA , Zhukai LIU , Ding DING , Lin DENG
IPC: B01L3/00
CPC classification number: B01L3/502715 , B01L3/5025 , B01L2200/027 , B01L2300/0829
Abstract: A chip packaging structure and a chip packaging method, the structure including: a sample substrate with through holes; first and second cover plates on opposite sides of the sample substrate; and at least one pair of a sample inlet and a sample outlet, each pair of the sample inlet and the sample outlet is in one or both of the first cover plate and the second cover plate, a flow path is between each pair of the sample inlet and the sample outlet, a first flow channel structure is on a surface of the first cover plate opposite to the sample substrate, a second flow channel structure is on a surface of the second cover plate opposite to the sample substrate, and the first flow channel structure and the second flow channel structure are connected with the through holes, to form a continuous channel corresponding to the flow path.
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公开(公告)号:US12119529B2
公开(公告)日:2024-10-15
申请号:US17442197
申请日:2021-01-29
Inventor: Zongmin Liu , Chunxin Li , Wei Li , Xichao Fan , Junwei Guo , Jijing Huang , Mengjun Hou
CPC classification number: H01P1/184 , H01P3/08 , H01P11/003 , H01Q3/36
Abstract: The disclosure provides a phase shifter, a manufacturing method thereof and an antenna, and belongs to the field of communication technology. The phase shifter includes a first substrate; a signal line and reference lines on the first substrate; a first insulating layer on the signal line; a plurality of electrode film bridges on a side of the first insulating layer distal to the signal line; and a first transmission structure on the first insulating layer and electrically connected to the signal line; and an orthographic projection of the first transmission structure on the first substrate is not overlapped with an orthographic projection of the plurality of electrode film bridges on the first substrate.
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公开(公告)号:US12114525B2
公开(公告)日:2024-10-08
申请号:US17052092
申请日:2020-04-11
Inventor: Xueguang Hao , Yong Qiao , Xinyin Wu , Hongfei Cheng
IPC: H10K50/86 , H10K59/122 , H10K59/131 , H10K59/38
CPC classification number: H10K50/865 , H10K59/122 , H10K59/131 , H10K59/38
Abstract: Disclosed are an OLED display panel and a display device. The OLED display panel includes a substrate, a plurality of light emitting components arranged in an array, and a light resistance structure between the light emitting components. The light resistance structure prevents the reflected light of the emergent light from the light emitting components, from emitting out from one side of the substrate between the light emitting components.
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公开(公告)号:US12113261B2
公开(公告)日:2024-10-08
申请号:US17777655
申请日:2021-05-26
Inventor: Jingwen Guo , Feng Qu
Abstract: A phase shifter includes a base substrate; a signal electrode, first and second reference electrodes all on the base substrate, and the first and second reference electrodes being respectively on two sides of a length direction of the signal electrode; an interlayer insulating layer on a side of the signal electrode away from the base substrate; and a phase control unit including a film bridge on a side of the interlayer insulating layer away from the base substrate. The signal electrode is in space enclosed by the base substrate and the film bridge, and two ends of the film bridge respectively overlap with the first and second reference electrodes in a direction perpendicular to the base substrate. The film bridge includes first and second anchor point areas and a functional area between the first and second anchor point areas, and has a hollow pattern in the functional area.
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39.
公开(公告)号:US20240334730A1
公开(公告)日:2024-10-03
申请号:US18675213
申请日:2024-05-28
Inventor: Gang YU
IPC: H10K50/155 , H10K50/115 , H10K50/15 , H10K50/16 , H10K59/12 , H10K71/00 , H10K85/30 , H10K102/00
CPC classification number: H10K50/155 , H10K50/156 , H10K71/00 , H10K85/30 , H10K50/115 , H10K50/16 , H10K59/12 , H10K2102/00 , H10K2102/331
Abstract: A light-emitting diode device and a manufacturing method therefor, and a display panel and a display apparatus. The light-emitting diode device comprises a quantum dot light-emitting layer, and a hole transport layer located at one side of the quantum dot light-emitting layer, wherein the hole transport layer comprises a perovskite material and an organic hole transport material. The high carrier mobility of a perovskite material can improve the carrier transport performance of a hole transport layer.
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公开(公告)号:US20240322434A1
公开(公告)日:2024-09-26
申请号:US18665648
申请日:2024-05-16
Inventor: Yafei Zhang , Dongdong Zhang , Mengwen Jia , Xudong Zhang
CPC classification number: H01Q9/0414 , H01Q1/22
Abstract: An is applied in the display device and includes a first antenna, a first transmission structure, a second antenna, a second transmission structure, and a radio frequency unit; the first antenna is electrically connected to the radio frequency unit at least through the first transmission structure, and the second antenna is electrically connected to the radio frequency unit through the second transmission structure; when the antenna module is applied in a display device, the first antenna is located on the display surface side of the display device, and the second antenna is located on a side of the display device away from the display surface side.
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