公开(公告)号：US20080261120A1

公开(公告)日：2008-10-23

申请号：US11737956

申请日：2007-04-20

Applicant: Jeffrey Peter Gambino ,  Robert Kenneth Leidy ,  Kirk David Peterson ,  Jed Hickory Rankin ,  Edmund Juris Sprogis

Inventor： Jeffrey Peter Gambino ,  Robert Kenneth Leidy ,  Kirk David Peterson ,  Jed Hickory Rankin ,  Edmund Juris Sprogis

IPC: G03C5/00 ,  G03F1/00

CPC classification number: G03F1/30 ,  G03F1/48 ,  G03F1/54

Abstract: A photomask and a method of fabricating the photomask. The photomask including: a substrate transparent to a selected wavelength or wavelengths of radiation, the substrate having a top surface and an opposite bottom surface, the substrate having a printable region and a non-printable region; the printable region having first opaque regions raised above the top surface of the substrate adjacent to clear regions, each opaque region of the first opaque regions having sidewalls and opposite top and bottom surfaces, the first opaque regions including a metal; the non-printable region including metal second opaque region raised above the top surface of the substrate, the second opaque region having sidewalls and opposite top and bottom surface, the second opaque regions including the metal; and a conformal protective metal oxide capping layer on top surfaces and sidewalls of the first and second opaque regions. The conformal layer is formed by oxidation.

Abstract translation: 光掩模和制造光掩模的方法。 所述光掩模包括：对所选择的波长或辐射波长透明的衬底，所述衬底具有顶表面和相对的底表面，所述衬底具有可打印区域和不可打印区域; 所述可印刷区域具有在所述基板的与所述透明区域相邻的顶表面上方的第一不透明区域，所述第一不透明区域的每个不透明区域具有侧壁和相对的顶表面和底表面，所述第一不透明区域包括金属; 所述不可打印区域包括在所述基板的顶表面上方升高的金属第二不透明区域，所述第二不透明区域具有侧壁和相对的顶部和底部表面，所述第二不透明区域包括所述金属; 以及在第一和第二不透明区域的顶表面和侧壁上的共形保护性金属氧化物覆盖层。 保形层通过氧化形成。

公开(公告)号：US07193423B1

公开(公告)日：2007-03-20

申请号：US11275112

申请日：2005-12-12

Applicant: Timothy Joseph Dalton ,  Jeffrey Peter Gambino ,  Mark David Jaffe ,  Stephen Ellinwood Luce ,  Edmund Juris Sprogis

Inventor： Timothy Joseph Dalton ,  Jeffrey Peter Gambino ,  Mark David Jaffe ,  Stephen Ellinwood Luce ,  Edmund Juris Sprogis

IPC: G01R27/26 ,  G01R31/02

CPC classification number: H01L23/544 ,  H01L25/0657 ,  H01L25/50 ,  H01L2223/54453 ,  H01L2225/06513 ,  H01L2225/06531 ,  H01L2225/06593 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Structures for aligning wafers and methods for operating the same. The structure includes (a) a first semiconductor wafer including a first capacitive coupling structure, and (b) a second semiconductor wafer including a second capacitive coupling structure. The first and second semiconductor wafers are in direct physical contact with each other via a common surface. If the first and second semiconductor wafers are moved with respect to each other by a first displacement distance of 1 nm in a first direction while the first and second semiconductor wafers are in direct physical contact with each other via the common surface, then a change of at least 10−18 F in capacitance of a first capacitor comprising the first and second capacitive coupling structures results. The first direction is essentially parallel to the common surface.

Abstract translation: 用于对准晶片的结构及其操作方法。 该结构包括（a）包括第一电容耦合结构的第一半导体晶片和（b）包括第二电容耦合结构的第二半导体晶片。 第一和第二半导体晶片经由公共表面彼此直接物理接触。 如果第一和第二半导体晶片在第一方向上相对于彼此移动了1nm的第一位移距离，同时第一和第二半导体晶片经由公共表面彼此直接物理接触，则 包括第一电容耦合结构和第二电容耦合结构的第一电容器的电容中的至少10 -18 F。 第一个方向基本上平行于共同的表面。

公开(公告)号：US5935763A

公开(公告)日：1999-08-10

申请号：US664283

申请日：1996-06-11

Applicant: Michael Dean Caterer ,  Timothy Harrison Daubenspeck ,  Thomas George Ference ,  Edmund Juris Sprogis

Inventor： Michael Dean Caterer ,  Timothy Harrison Daubenspeck ,  Thomas George Ference ,  Edmund Juris Sprogis

IPC: G03F7/00 ,  G03F7/20 ,  H01L21/60 ,  H01L21/768

CPC classification number: H01L21/76897 ,  G03F7/0035 ,  G03F7/2051 ,  H01L21/76802 ,  H01L21/76819 ,  G03F7/2008

Abstract: An opening in an insulator on a substrate is self-aligned to a reflective region on the substrate. The opening is formed by shining blanket radiation on photoresist on the insulator and developing to open the resist and insulator. The resist region that is above the reflective region absorbs both incident and reflected radiation, a larger total dose of radiation than is absorbed by resist above non-reflective regions. The incident dose is adjusted to provide a below threshold dose everywhere except to those regions of resist that are above highly reflective regions.

Abstract translation: 衬底上的绝缘体的开口与衬底上的反射区域自对准。 开口通过在绝缘体上的光致抗蚀剂上照射毯子辐射而形成，并且显影以打开抗蚀剂和绝缘体。 在反射区域之上的抗蚀剂区域吸收入射和反射辐射，比非抗反射区域上的抗蚀剂吸收的辐射总量更大。 调整入射剂量以提供除了在高反射区域之上的那些抗蚀剂区域之外的其它位置处的低于阈值剂量。