公开(公告)号：US06740430B2

公开(公告)日：2004-05-25

申请号：US10033962

申请日：2002-01-03

Applicant: Kazunori Ueno ,  Koichi Suzuki ,  Akihiro Senoo ,  Hiroshi Tanabe ,  Seiji Mashimo

Inventor： Kazunori Ueno ,  Koichi Suzuki ,  Akihiro Senoo ,  Hiroshi Tanabe ,  Seiji Mashimo

IPC: H05B3304

CPC classification number: H01L23/26 ,  H01L51/5259 ,  H01L2924/0002 ,  H01L2924/12044 ,  H05B33/04 ,  Y10S428/917 ,  Y10T428/239 ,  H01L2924/00

Abstract: An organic luminescence device is constituted by an organic luminescence lamination structure comprising a pair of an anode and a cathode, and at least one organic compound layer disposed between the anode and the cathode, a hermetic sealing housing enclosing therein the organic luminescence lamination structure and blocking external air, and a drying agent disposed within the hermetic sealing housing. The drying agent comprises a compound represented by the following formula (1): R—NCO  (1), wherein R denotes a substituted or unsubstituted alkenyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted styryl group, a substituted or unsubstituted acyl group, or a substituted or unsubstituted heterocyclic group. The drying agent comprises the compound of the formula (1) in a polymerized form.

Abstract translation: 有机发光装置由包括一对阳极和阴极的有机发光层叠结构和设置在阳极和阴极之间的至少一个有机化合物层构成，气密密封壳体包围有机发光层叠结构和封闭 外部空气和设置在气密密封壳体内的干燥剂。 干燥剂包含由下式（1）表示的化合物：其中R表示取代或未取代的烯基，取代或未取代的芳基，取代或未取代的苯乙烯基，取代或未取代的酰基，或取代或未取代的酰基， 未取代的杂环基。 干燥剂包含聚合形式的式（1）化合物。

公开(公告)号：US06657154B1

公开(公告)日：2003-12-02

申请号：US08866331

申请日：1997-05-30

Applicant: Hiroshi Tanabe ,  Setsuo Kaneko

Inventor： Hiroshi Tanabe ,  Setsuo Kaneko

IPC: B23K2600

CPC classification number: H01L29/42384 ,  B23K26/06 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/12 ,  B23K26/1224 ,  B23K26/123 ,  B23K2101/40 ,  H01L27/1285 ,  H01L29/66757 ,  Y10S438/908

Abstract: In a manufacturing technology for forming a thin film transistor comprising a laser irradiation step, objects of the present invention are to obtain a high performance and multifunction semiconductor manufacturing apparatus and thin film transistor manufacturing method. A silicon thin film 201 is formed on a glass substrate 202, and laser 203 is irradiated onto this thin film 201 whereby a re-crystallization film is obtained. This re-crystallization film undergoes a hydrogen plasma processing so that dangling-bonds of silicon are terminated. Moreover, a step for forming a silicon dioxide film 205 on the re-crystallization film is included. These steps are performed under the conditions that the glass substrate 202 is not exposed to the air and a processing temperature is 350° C. or less.

Abstract translation: 在用于形成包括激光照射步骤的薄膜晶体管的制造技术中，本发明的目的是获得高性能和多功能半导体制造装置和薄膜晶体管制造方法。 在玻璃基板202上形成硅薄膜201，将激光203照射在该薄膜201上，由此得到再结晶膜。 该再结晶膜经受氢等离子体处理，以使硅的悬挂键终止。 此外，包括在再结晶膜上形成二氧化硅膜205的步骤。 这些步骤是在玻璃基板202不暴露于空气和处理温度为350℃以下的条件下进行的。

公开(公告)号：US06583557B2

公开(公告)日：2003-06-24

申请号：US09840104

申请日：2001-04-24

Applicant: Yuichi Hashimoto ,  Yoichi Osato ,  Koichi Suzuki ,  Akihiro Senoo ,  Hiroshi Tanabe ,  Kazunori Ueno ,  Seiji Mashimo ,  Shinichi Urakawa

Inventor： Yuichi Hashimoto ,  Yoichi Osato ,  Koichi Suzuki ,  Akihiro Senoo ,  Hiroshi Tanabe ,  Kazunori Ueno ,  Seiji Mashimo ,  Shinichi Urakawa

IPC: H01J162

CPC classification number: H01L51/5253

Abstract: An organic luminescent element includes a substrate, an anode, a cathode, at least one organic material layer interposed between the anode and the cathode, and a sealing film containing a ferroelectric material provided on the anode or the cathode on the organic material layer. Preferably, the organic luminescent element further includes a counter electrode provided on the sealing film. Preferably, the substrate is transparent, and the anode is composed of indium tin oxide.

Abstract translation: 有机发光元件包括基板，阳极，阴极，介于阳极和阴极之间的至少一个有机材料层，以及包含设置在有机材料层上的阳极或阴极上的铁电材料的密封膜。 优选地，有机发光元件还包括设置在密封膜上的对电极。 优选地，基板是透明的，并且阳极由氧化铟锡构成。

公开(公告)号：US06444327B1

公开(公告)日：2002-09-03

申请号：US09556427

申请日：2000-04-24

Applicant: Katsuhisa Yuda ,  Hiroshi Tanabe

Inventor： Katsuhisa Yuda ,  Hiroshi Tanabe

IPC: C01B33113

CPC classification number: C23C16/5096 ,  C23C16/402

Abstract: A silicon oxide film has a ratio of A1 to A2 which is not higher than 0.21, where A1 is a first peak integrated intensity of a first peak belonging to Si—OH and appearing in the vicinity of a wave-number of 970 cm−1, and A2 is a second peak integrated intensity of a second peak belonging to O—Si—O and appearing in the vicinity of a wave-number 820 cm−1, and each of the first and second peak integrated intensities is defined as a product of peak width at half height and a peak height of a Raman spectrum obtained by a Raman scattering spectroscopic analysis of the silicon oxide film. The silicon oxide film is deposited under a condition that a ratio of a first flow rate Fo of oxygen gas to a second flow rate Fsi of a silicon source gas is not lower than 20.

Abstract translation: 氧化硅膜的Al与A2的比率不高于0.21，其中A1是属于Si-OH的第一峰的第一峰积分强度，并且出现在970cm -1的波数附近 A2是属于O-Si-O的第二峰的第二峰积分强度，出现在波数820cm -1附近，第一和第二峰积分强度中的每一个被定义为产物 通过氧化硅膜的拉曼散射光谱分析获得的半高峰宽度和拉曼光谱的峰高。 在氧气的第一流量Fo与硅源气体的第二流量Fsi的比率不低于20的条件下沉积氧化硅膜。

公开(公告)号：US06372039B1

公开(公告)日：2002-04-16

申请号：US09273489

申请日：1999-03-22

Applicant: Hiroshi Okumura ,  Hiroshi Tanabe

Inventor： Hiroshi Okumura ,  Hiroshi Tanabe

IPC: C30B2802

CPC classification number: H01L21/02686 ,  B23K26/06 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/066 ,  B23K26/0665 ,  B23K26/067 ,  C30B1/023 ,  C30B29/06 ,  H01L21/02691 ,  H01L21/2026

Abstract: A method and device for irradiating a pulse laser beam having a linear shape and a rectangular shape beam spot onto a non-single crystal semiconductor thin film. The method includes scanning the pulse laser beam so that previous and next beam spots are partially overlapped. The laser beam has a profile which includes: a first beam profile region having a first energy density which is lower than a micro-crystallization threshold value Ea of an amorphous semiconductor for forming a polycrystallization region; a second beam profile region having a second energy density which is not lower than the micro-crystallization threshold value Ea and is lower than a micro-crystallization threshold value Ep of a polycrystalline semiconductor for forming a first micro-polycrystallization region from an amorphous semiconductor region; and a third beam profile region having a third energy density which is not lower than the micro-crystallization threshold value Ep for forming a second micro-polycrystallization region from a polycrystalline semiconductor region.

Abstract translation: 一种用于将具有线性形状和矩形形状的光斑的脉冲激光束照射到非单晶半导体薄膜上的方法和装置。 该方法包括扫描脉冲激光束，使得前一个和下一个光束点部分重叠。 激光束具有轮廓，该轮廓包括：具有低于用于形成多晶化区域的非晶半导体的微结晶阈值Ea的第一能量密度的第一光束轮廓区域; 第二光束轮廓区域，其具有不低于微结晶阈值Ea的第二能量密度，并且低于用于从非晶半导体区域形成第一微多晶结晶区域的多晶半导体的微结晶阈值Ep ; 以及具有不低于用于形成来自多晶半导体区域的第二微多晶结晶区域的微结晶阈值Ep的第三能量密度的第三光束轮廓区域。

公开(公告)号：US05998838A

公开(公告)日：1999-12-07

申请号：US33609

申请日：1998-03-03

Applicant: Hiroshi Tanabe ,  Katsuhisa Yuda ,  Hiroshi Okumura ,  Yoshinobu Sato

Inventor： Hiroshi Tanabe ,  Katsuhisa Yuda ,  Hiroshi Okumura ,  Yoshinobu Sato

IPC: H01L21/00 ,  H01L21/339 ,  H01L21/4763 ,  H01L21/84 ,  H01L27/01 ,  H01L27/12 ,  H01L31/0392

CPC classification number: H01L29/42384 ,  H01L29/66757 ,  H01L29/78609 ,  H01L27/14665

Abstract: In a thin film transistor, a first insulating film on a silicon layer formed in an island on a substrate is smaller in thickness than the silicon layer so that the stepped island edges is gentle in slope to facilitate covering the island with a second insulating film. This reduces occurrence of gate leak considerably. Since the peripheral region of the stepped island is smaller in thickness than the central region above the channel, it is possible to minimize occurrence of gate electrode breakage. The silicon layer contains two or more inert gas atoms, and the atoms smaller in mass number (e.g., He) are contained in and near an interface with a silicon active layer while the atoms larger in mass number (e.g., Ar) than those smaller in mass number are contained in and near a second interface with a gate electrode.

Abstract translation: 在薄膜晶体管中，形成在基板上的岛上的硅层上的第一绝缘膜的厚度比硅层的厚度小，使得台阶状的岛边缘倾斜平缓以便于用第二绝缘膜覆盖岛。 这可以大大减少闸门泄漏的发生。 由于阶梯状岛的周边区域的厚度比通道上方的中心区域的厚度小，所以能够最小化栅电极断裂的发生。 硅层含有两个或更多个惰性气体原子，质量数较小的原子（例如，He）包含在与硅有源层的界面中和附近，而质量数（例如Ar）的原子比较小 质量数量被包含在与栅电极的第二界面中和附近。

公开(公告)号：US5902627A

公开(公告)日：1999-05-11

申请号：US959742

申请日：1997-10-28

Applicant: Atushi Hamano ,  Masahide Tani ,  Takashi Sasaki ,  Tomohiro Kurokawa ,  Hiroshi Tanabe ,  Mayumi Makiyama

Inventor： Atushi Hamano ,  Masahide Tani ,  Takashi Sasaki ,  Tomohiro Kurokawa ,  Hiroshi Tanabe ,  Mayumi Makiyama

IPC: A23K1/00 ,  A23C9/123 ,  A23C9/13 ,  A23K1/08 ,  A61K35/20 ,  A61P37/04 ,  A23C17/00

CPC classification number: A23C9/1232 ,  A23K10/28 ,  Y02P60/875

Abstract: A process for the production of yogurt powder possessing an immunological activity, in which yogurt is heated at 60.degree. to 100.degree. C. and it is provided with an alkaline agent to adjust the yogurt to pH 7.0 to 96, and thereafter dried to a powder. Before powdering, the yogurt may be subjected either to the addition of a non-ionic surfactant or to high pressure homogenizing treatment. Yogurt retaining immunological activity can be used effectively as food and feed.

Abstract translation: 一种生产具有免疫活性的酸奶粉的方法，其中将酸奶加热至60℃至100℃，并提供碱性试剂以将酸奶调节至pH 7.0至96，然后干燥至粉末 。 在粉化之前，酸奶可以进行非离子表面活性剂的添加或高压均质处理。 保留免疫活性的酸奶可以有效地用作食物和饲料。

公开(公告)号：US5555621A

公开(公告)日：1996-09-17

申请号：US270827

申请日：1994-07-05

Applicant: Hiroshi Tanabe ,  Tsutomu Imamura ,  Katsumi Amada ,  Yuji Shimada

Inventor： Hiroshi Tanabe ,  Tsutomu Imamura ,  Katsumi Amada ,  Yuji Shimada

IPC: F01N3/28 ,  B23P15/00

CPC classification number: F01N3/2853 ,  F01N3/2857 ,  F01N3/2867 ,  F01N2330/06 ,  Y10T29/49345

Abstract: A method of making a catalytic converter for an automotive internal combustion engine comprises a cylindrical honeycomb catalyst carrier made of a ceramic and carrying a catalytic material. The catalyst carrier is encased within a cylindrical container upon being axially supported at its opposite end faces between oppositely disposed annular metal caps through cushioning materials. The metal caps are fixedly secured to the inner peripheral surface of the container by plug welding. In production of the catalytic converter, the plug welding is made in a state in which the metal caps are being biased to the catalyst carrier at a predetermined pressure by a pair of pressing jigs which respectively abut the metal caps.

Abstract translation: 制造用于汽车内燃机的催化转化器的方法包括由陶瓷制成并承载催化材料的圆柱形蜂窝催化剂载体。 当催化剂载体通过缓冲材料轴向地支撑在相对设置的环形金属盖之间的相对端面处时，将催化剂载体封装在圆柱形容器内。 金属盖通过插头焊接固定在容器的内周面上。 在催化转化器的制造中，通过一对分别抵靠金属盖的加压夹具，以预定的压力将金属盖偏压到催化剂载体的状态下进行塞子焊接。

公开(公告)号：US5494737A

公开(公告)日：1996-02-27

申请号：US171439

申请日：1993-12-22

Applicant: Hideo Sakai ,  Kojiro Motai ,  Satoru Kishi ,  Katsuyuki Morita ,  Hiroshi Tanabe

Inventor： Hideo Sakai ,  Kojiro Motai ,  Satoru Kishi ,  Katsuyuki Morita ,  Hiroshi Tanabe

IPC: B29C51/08 ,  B29C51/14 ,  B32B27/04 ,  B60R13/02 ,  B32B5/22 ,  B28B5/00 ,  B60J7/00

CPC classification number: B32B38/00 ,  B29C51/145 ,  B32B27/04 ,  B29C51/08 ,  B29C51/082 ,  B29L2031/3011 ,  B60R13/0225 ,  Y10T428/233 ,  Y10T428/249969 ,  Y10T428/249986 ,  Y10T428/249987 ,  Y10T428/249988 ,  Y10T428/249989 ,  Y10T428/249992 ,  Y10T442/647

Abstract: A ceiling material for vehicles, said ceiling material comprises:a core material (11) composed of a resin foamed article;a protective layer (12) comprising a thermoplastic resin blended with fibers in a range of not less than 40% and not more than 80% in volume content;said protective layer (12) being provided on at least one surface of the core material (11);and a thin sheet-shaped surface material (14) provided on the surface of the protective layer (12).A process of producing ceiling materials for vehicles, which comprises the steps of:a material sheet of a protective layer comprising a thermoplastic resin blended with fibers in a range of not less than 40% and not more than 80% in volume content being heated to not less than a glass transition point of the thermoplastic resin;said material sheet being overlaid with a core material sheet composed of a resin foamed article;a surface material being on the core material sheet;and pressuring and shaping said protective layer, said core material sheet, and said surface material which have been overlaid using a molding mold.

Abstract translation: 一种用于车辆的天花板材料，所述天花板材料包括：由树脂发泡制品构成的芯材料（11）; 保护层（12），其包含与纤维混合的热塑性树脂，所述纤维的体积含量为不小于40％且不大于80％的范围; 所述保护层（12）设置在所述芯材料（11）的至少一个表面上; 以及设置在保护层（12）的表面上的薄片状表面材料（14）。 一种生产车辆用顶棚材料的方法，包括以下步骤：将包含热塑性树脂的保护层的材料片与不同于40重量％且不大于80体积％的纤维混合加热至 不低于热塑性树脂的玻璃化转变点; 所述材料片与由树脂发泡制品构成的芯材片材重叠; 表面材料在芯材片上; 并且使用模制模具将所述保护层，所述芯材片和所述表面材料加压和成型。

公开(公告)号：US5359398A

公开(公告)日：1994-10-25

申请号：US969501

申请日：1992-10-30

Applicant: Katsuhiro Echigo ,  Ichiro Tsuruoka ,  Manabu Mochizuki ,  Tsuneo Kurotori ,  Kenzo Ariyama ,  Kenji Kojima ,  Mayumi Miyao ,  Hiroshi Tanabe ,  Minoru Iwamoto

Inventor： Katsuhiro Echigo ,  Ichiro Tsuruoka ,  Manabu Mochizuki ,  Tsuneo Kurotori ,  Kenzo Ariyama ,  Kenji Kojima ,  Mayumi Miyao ,  Hiroshi Tanabe ,  Minoru Iwamoto

IPC: G03G15/10 ,  G03G21/00

CPC classification number: G03G21/0088 ,  G03G15/104

Abstract: An image forming apparatus which uses a liquid developer to produce a visible image from an image carrier is provided with a movable cleaning unit. This movable cleaning unit is moved in and out of contact with the image carrier. A tank stores the liquid developer which is fed to both the developing unit and to the cleaning unit and is provided with a mechanism for feeding the developing unit and the cleaning unit with the liquid developer which is so stored.

Abstract translation: 使用液体显影剂从图像载体产生可见图像的图像形成装置设置有可移动清洁单元。 该移动清洁单元与图像载体移动接触和脱离接触。 储罐储存供给到显影单元和清洁单元的液体显影剂，并且设置有用于将显影单元和清洁单元与被储存的液体显影剂一起供给的机构。