公开(公告)号：US05998838A

公开(公告)日：1999-12-07

申请号：US33609

申请日：1998-03-03

申请人： Hiroshi Tanabe ,  Katsuhisa Yuda ,  Hiroshi Okumura ,  Yoshinobu Sato

发明人： Hiroshi Tanabe ,  Katsuhisa Yuda ,  Hiroshi Okumura ,  Yoshinobu Sato

IPC分类号： H01L21/00 ,  H01L21/339 ,  H01L21/4763 ,  H01L21/84 ,  H01L27/01 ,  H01L27/12 ,  H01L31/0392

CPC分类号： H01L29/42384 ,  H01L29/66757 ,  H01L29/78609 ,  H01L27/14665

摘要： In a thin film transistor, a first insulating film on a silicon layer formed in an island on a substrate is smaller in thickness than the silicon layer so that the stepped island edges is gentle in slope to facilitate covering the island with a second insulating film. This reduces occurrence of gate leak considerably. Since the peripheral region of the stepped island is smaller in thickness than the central region above the channel, it is possible to minimize occurrence of gate electrode breakage. The silicon layer contains two or more inert gas atoms, and the atoms smaller in mass number (e.g., He) are contained in and near an interface with a silicon active layer while the atoms larger in mass number (e.g., Ar) than those smaller in mass number are contained in and near a second interface with a gate electrode.

摘要翻译： 在薄膜晶体管中，形成在基板上的岛上的硅层上的第一绝缘膜的厚度比硅层的厚度小，使得台阶状的岛边缘倾斜平缓以便于用第二绝缘膜覆盖岛。 这可以大大减少闸门泄漏的发生。 由于阶梯状岛的周边区域的厚度比通道上方的中心区域的厚度小，所以能够最小化栅电极断裂的发生。 硅层含有两个或更多个惰性气体原子，质量数较小的原子（例如，He）包含在与硅有源层的界面中和附近，而质量数（例如Ar）的原子比较小 质量数量被包含在与栅电极的第二界面中和附近。

公开(公告)号：US06703267B2

公开(公告)日：2004-03-09

申请号：US10231045

申请日：2002-08-30

申请人： Hiroshi Tanabe ,  Katsuhisa Yuda ,  Hiroshi Okumura ,  Yoshinobu Sato

发明人： Hiroshi Tanabe ,  Katsuhisa Yuda ,  Hiroshi Okumura ,  Yoshinobu Sato

IPC分类号： H01L2100

CPC分类号： H01L29/42384 ,  H01L27/14665 ,  H01L29/66757 ,  H01L29/78609

摘要： In a thin film transistor, a first insulating film on a silicon layer formed in an island on a substrate is smaller in thickness than the silicon layer so that the stepped island edges is gentle in slope to facilitate covering the island with a second insulating film. This reduces occurrence of gate leak considerably. Since the peripheral region of the stepped island is smaller in thickness than the central region above the channel, it is possible to minimize occurrence of gate electrode breakage. The silicon layer contains two or more inert gas atoms, and the atoms smaller in mass number (e.g., He) are contained in and near an interface with a silicon active layer while the atoms larger in mass number (e.g., Ar) than those smaller in mass number are contained in and near a second interface with a gate electrode.

摘要翻译： 在薄膜晶体管中，形成在基板上的岛上的硅层上的第一绝缘膜的厚度比硅层的厚度小，使得台阶状的岛边缘倾斜平缓以便于用第二绝缘膜覆盖岛。 这可以大大减少闸门泄漏的发生。 由于阶梯状岛的周边区域的厚度比通道上方的中心区域的厚度小，所以能够最小化栅电极断裂的发生。 硅层含有两个或更多个惰性气体原子，质量数较小的原子（例如，He）包含在与硅有源层的界面中和附近，而质量数（例如Ar）的原子比较小 质量数量被包含在与栅电极的第二界面中和附近。

公开(公告)号：US06444508B1

公开(公告)日：2002-09-03

申请号：US09900007

申请日：2001-07-09

申请人： Hiroshi Tanabe ,  Katsuhisa Yuda ,  Hiroshi Okumura ,  Yoshinobu Sato

发明人： Hiroshi Tanabe ,  Katsuhisa Yuda ,  Hiroshi Okumura ,  Yoshinobu Sato

IPC分类号： H01L2184

CPC分类号： H01L29/42384 ,  H01L27/14665 ,  H01L29/66757 ,  H01L29/78609

摘要： In a thin film transistor, a first insulating film on a silicon layer formed in an island on a substrate is smaller in thickness than the silicon layer so that the stepped island edges is gentle in slope to facilitate covering the island with a second insulating film. This reduces occurrence of gate leak considerably. Since the peripheral region of the stepped island is smaller in thickness than the central region above the channel, it is possible to minimize occurrence of gate electrode breakage. The silicon layer contains two or more inert gas atoms, and the atoms smaller in mass number (e.g., He) are contained in and near an interface with a silicon active layer while the atoms larger in mass number (e.g., Ar) than those smaller in mass number are contained in and near a second interface with a gate electrode.

摘要翻译： 在薄膜晶体管中，形成在基板上的岛上的硅层上的第一绝缘膜的厚度比硅层的厚度小，使得台阶状的岛边缘倾斜平缓以便于用第二绝缘膜覆盖岛。 这可以大大减少闸门泄漏的发生。 由于阶梯状岛的周边区域的厚度比通道上方的中心区域的厚度小，所以能够最小化栅电极断裂的发生。 硅层含有两个或更多个惰性气体原子，质量数较小的原子（例如，He）包含在与硅有源层的界面中和附近，而质量数（例如Ar）的原子比较小 质量数量被包含在与栅电极的第二界面中和附近。

公开(公告)号：US06258638B1

公开(公告)日：2001-07-10

申请号：US09451867

申请日：1999-12-01

申请人： Hiroshi Tanabe ,  Katsuhisa Yuda ,  Hiroshi Okumura ,  Yoshinobu Sato

发明人： Hiroshi Tanabe ,  Katsuhisa Yuda ,  Hiroshi Okumura ,  Yoshinobu Sato

IPC分类号： H01L2100

CPC分类号： H01L29/42384 ,  H01L27/14665 ,  H01L29/66757 ,  H01L29/78609

摘要： In a thin film transistor, a first insulating film on a silicon layer formed in an island on a substrate is smaller in thickness than the silicon layer so that the stepped island edges is gentle in slope to facilitate covering the island with a second insulating film. This reduces occurrence of gate leak considerably. Since the peripheral region of the stepped island is smaller in thickness than the central region above the channel, it is possible to minimize occurrence of gate electrode breakage. The silicon layer contains two or more inert gas atoms, and the atoms smaller in mass number (e.g., He) are contained in and near an interface with a silicon active layer while the atoms larger in mass number (e.g., Ar) than those smaller in mass number are contained in and near a second interface with a gate electrode.

摘要翻译： 在薄膜晶体管中，形成在基板上的岛上的硅层上的第一绝缘膜的厚度比硅层的厚度小，使得台阶状的岛边缘倾斜平缓以便于用第二绝缘膜覆盖岛。 这可以大大减少闸门泄漏的发生。 由于阶梯状岛的周边区域的厚度比通道上方的中心区域的厚度小，所以能够最小化栅电极断裂的发生。 硅层含有两个或更多个惰性气体原子，质量数较小的原子（例如，He）包含在与硅有源层的界面中和附近，而质量数（例如Ar）的原子比较小 质量数量被包含在与栅电极的第二界面中和附近。

公开(公告)号：US06372039B1

公开(公告)日：2002-04-16

申请号：US09273489

申请日：1999-03-22

申请人： Hiroshi Okumura ,  Hiroshi Tanabe

发明人： Hiroshi Okumura ,  Hiroshi Tanabe

IPC分类号： C30B2802

CPC分类号： H01L21/02686 ,  B23K26/06 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/066 ,  B23K26/0665 ,  B23K26/067 ,  C30B1/023 ,  C30B29/06 ,  H01L21/02691 ,  H01L21/2026

摘要： A method and device for irradiating a pulse laser beam having a linear shape and a rectangular shape beam spot onto a non-single crystal semiconductor thin film. The method includes scanning the pulse laser beam so that previous and next beam spots are partially overlapped. The laser beam has a profile which includes: a first beam profile region having a first energy density which is lower than a micro-crystallization threshold value Ea of an amorphous semiconductor for forming a polycrystallization region; a second beam profile region having a second energy density which is not lower than the micro-crystallization threshold value Ea and is lower than a micro-crystallization threshold value Ep of a polycrystalline semiconductor for forming a first micro-polycrystallization region from an amorphous semiconductor region; and a third beam profile region having a third energy density which is not lower than the micro-crystallization threshold value Ep for forming a second micro-polycrystallization region from a polycrystalline semiconductor region.

摘要翻译： 一种用于将具有线性形状和矩形形状的光斑的脉冲激光束照射到非单晶半导体薄膜上的方法和装置。 该方法包括扫描脉冲激光束，使得前一个和下一个光束点部分重叠。 激光束具有轮廓，该轮廓包括：具有低于用于形成多晶化区域的非晶半导体的微结晶阈值Ea的第一能量密度的第一光束轮廓区域; 第二光束轮廓区域，其具有不低于微结晶阈值Ea的第二能量密度，并且低于用于从非晶半导体区域形成第一微多晶结晶区域的多晶半导体的微结晶阈值Ep ; 以及具有不低于用于形成来自多晶半导体区域的第二微多晶结晶区域的微结晶阈值Ep的第三能量密度的第三光束轮廓区域。

公开(公告)号：US08508852B2

公开(公告)日：2013-08-13

申请号：US13233774

申请日：2011-09-15

申请人： Hiroshi Okumura ,  Jin Matsushima ,  Hiroshi Tanabe

发明人： Hiroshi Okumura ,  Jin Matsushima ,  Hiroshi Tanabe

IPC分类号： G02B27/10

CPC分类号： G02B3/06 ,  G02B3/0056

摘要： To suppress bad shaping generated due to fusion of neighboring cylindrical lenses in a lens sheet formed by using an ultraviolet curable resin, for example. A lens sheet includes: a substrate formed with a transparent material; a plurality of protruded lines provided on the substrate in parallel at a specific pitch; and a plurality of cylindrical lenses, each of which is provided between the plurality of protruded lines on the substrate. The protruded line for forming the lens is designed to be constituted with a set of two lines, i.e., a left protruded line and a right protruded line, to suppress fusion of the neighboring lenses.

摘要翻译： 为了抑制例如通过使用紫外线固化树脂形成的透镜片中的相邻圆柱形透镜的融合而产生的不良成形。 透镜片包括：形成有透明材料的基板; 以特定间距平行设置在基板上的多条突出线; 以及多个柱面透镜，其各自设置在基板上的多个突出线之间。 用于形成透镜的突出线被设计成由一组两条线构成，即左突出线和右突出线，以抑制相邻透镜的熔合。

公开(公告)号：US20160329548A1

公开(公告)日：2016-11-10

申请号：US15096500

申请日：2016-04-12

申请人： Aya Harada ,  Eiji Hojo ,  Yasuhide Nakayama ,  Shin Osaki ,  Hiroshi Okumura ,  Katsuya Noguchi

发明人： Aya Harada ,  Eiji Hojo ,  Yasuhide Nakayama ,  Shin Osaki ,  Hiroshi Okumura ,  Katsuya Noguchi

IPC分类号： H01M2/30 ,  H01M2/02

CPC分类号： H01M2/305 ,  H01M2/0242 ,  H01M2/30 ,  H01M2220/20 ,  H01R43/00 ,  Y10T29/49208

摘要： A storage battery includes a terminal portion for storage batteries having a plurality of bolt insertion holes bored in one or a plurality of directions, a nut insertion opening through which a nut is inserted, a hollow in communication with the bolt insertion holes and the nut insertion opening and the nut having at least one screw hole threaded in a direction coincident with at least one or the plurality of directions. A fixation portion is formed to fix the nut by deforming the terminal portion with the nut being inserted through the nut insertion opening into the hollow and the at least one screw hole of the nut being in communication respectively with the at least one of the plurality of bolt insertion holes.

摘要翻译： 蓄电池包括：具有多个在一个或多个方向上钻孔的螺栓插入孔的蓄电池的端子部分，插入有螺母的螺母插入口，与螺栓插入孔连通的中空部， 所述螺母具有沿与至少一个或多个方向一致的方向螺纹的至少一​​个螺纹孔。 固定部分形成为通过使螺母插入通过螺母插入口进入中空部的螺母使端子部分变形来固定螺母，并且螺母的至少一个螺纹孔分别与多个 螺栓插孔。

公开(公告)号：US09263406B2

公开(公告)日：2016-02-16

申请号：US13509264

申请日：2010-11-09

申请人： Hiroshi Okumura

发明人： Hiroshi Okumura

IPC分类号： H01L21/00 ,  H01L23/00 ,  H01L21/683 ,  H01L23/31 ,  H01L23/552 ,  H01L29/06 ,  H01L23/525

CPC分类号： H01L24/13 ,  H01L21/6836 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/525 ,  H01L23/552 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/94 ,  H01L29/0657 ,  H01L2221/6834 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/0502 ,  H01L2224/05099 ,  H01L2224/05541 ,  H01L2224/05555 ,  H01L2224/0556 ,  H01L2224/05599 ,  H01L2224/13016 ,  H01L2224/13027 ,  H01L2224/13099 ,  H01L2224/141 ,  H01L2224/94 ,  H01L2924/0001 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10156 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/3025 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device according to the present invention includes a semiconductor chip having a front surface and a rear surface, a sealing resin layer stacked on the front surface of the semiconductor chip, a post passing through the sealing resin layer in the thickness direction and having a side surface flush with a side surface of the sealing resin layer and a forward end surface flush with a front surface of the sealing resin layer, and an external connecting terminal provided on the forward end surface of the post.

摘要翻译： 根据本发明的半导体器件包括具有前表面和后表面的半导体芯片，层叠在半导体芯片的前表面上的密封树脂层，沿厚度方向穿过密封树脂层的柱，并且具有 侧表面与密封树脂层的侧表面齐平，前端表面与密封树脂层的前表面齐平，以及设置在柱的前端表面上的外部连接端子。

公开(公告)号：US08643180B2

公开(公告)日：2014-02-04

申请号：US12003424

申请日：2007-12-26

申请人： Hiroyuki Shinkai ,  Hiroshi Okumura

发明人： Hiroyuki Shinkai ,  Hiroshi Okumura

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor device of the present invention includes a semiconductor chip; an internal pad for electrical connection formed on a surface of the semiconductor chip; a stress relaxation layer formed on the semiconductor chip and having an opening for exposing the internal pad; an under-bump layer formed so as to cover a face exposed in the opening on the internal pad, an inner face of the opening and a circumference of the opening on the stress relaxation layer; a solder terminal for electrical connection with outside formed on the under-bump layer; and a protective layer formed on the stress relaxation layer, encompassing a periphery of the under-bump layer and covering a side face of the under-bump layer.

摘要翻译： 本发明的半导体器件包括半导体芯片; 用于电连接的内部焊盘，形成在所述半导体芯片的表面上; 形成在所述半导体芯片上并且具有用于使所述内部焊盘露出的开口的应力松弛层; 形成为覆盖露出在内部焊盘上的开口中的面的凸起下层，开口的内表面和应力松弛层上的开口的周边; 用于与凹凸层上形成的外部电连接的焊接端子; 以及形成在所述应力松弛层上的保护层，包围所述凸点下层的周边并覆盖所述凸点下层的侧面。

公开(公告)号：US20130107152A1

公开(公告)日：2013-05-02

申请号：US13807405

申请日：2011-04-20

申请人： Hiroshi Okumura

发明人： Hiroshi Okumura

IPC分类号： G02F1/133

CPC分类号： G02F1/13306 ,  G09G3/3677 ,  G09G2310/067 ,  G09G2320/0219 ,  G09G2320/0233

摘要： A liquid crystal display device (1) includes: a plurality of groups of scanning lines (Gia) and (Gib) via which gate signals are outputted to a plurality of pixels (PIX); and scanning line driving circuits (5a) and (5b) which generate the gate signals and which are disposed for each separate one of a plurality of groups of scanning lines (Gia) and (Gib), the liquid crystal display device (1) further including potential control circuits (15a) and (15b), placed in front of the scanning line driving circuits (5a) and (5b), respectively which incline, for each separate one of the groups of scanning lines (Gia) and (Gib), falling edges of high-potential signals (VGH1) and (VGH2) in accordance with which the gate signals are generated and which are composed of pulse waves. This prevents luminance unevenness from occurring in each display region.

摘要翻译： 液晶显示装置（1）包括：多个扫描线组（Gia）和（Gib）组，通过该组扫描线将栅极信号输出到多个像素（PIX）; 和扫描线驱动电路（5a）和（5b），所述扫描线驱动电路（5a）和（5b）产生所述栅极信号，并且被设置用于多组扫描线（Gia）和（Gib）中的每一个分离的所述液晶显示装置（1） 包括对于扫描线组（Gia）和（Gib）中的每一个分别放置在扫描线驱动电路（5a）和（5b）的前面的电位控制电路（15a）和（15b） ，根据其生成栅极信号并由脉冲波组成的高电位信号（VGH1）和（VGH2）的下降沿。 这防止了在每个显示区域中发生亮度不均匀。