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公开(公告)号：US06703267B2
公开(公告)日：2004-03-09
申请号：US10231045
申请日：2002-08-30
IPC分类号： H01L2100
CPC分类号： H01L29/42384 , H01L27/14665 , H01L29/66757 , H01L29/78609
摘要： In a thin film transistor, a first insulating film on a silicon layer formed in an island on a substrate is smaller in thickness than the silicon layer so that the stepped island edges is gentle in slope to facilitate covering the island with a second insulating film. This reduces occurrence of gate leak considerably. Since the peripheral region of the stepped island is smaller in thickness than the central region above the channel, it is possible to minimize occurrence of gate electrode breakage. The silicon layer contains two or more inert gas atoms, and the atoms smaller in mass number (e.g., He) are contained in and near an interface with a silicon active layer while the atoms larger in mass number (e.g., Ar) than those smaller in mass number are contained in and near a second interface with a gate electrode.
摘要翻译： 在薄膜晶体管中，形成在基板上的岛上的硅层上的第一绝缘膜的厚度比硅层的厚度小，使得台阶状的岛边缘倾斜平缓以便于用第二绝缘膜覆盖岛。 这可以大大减少闸门泄漏的发生。 由于阶梯状岛的周边区域的厚度比通道上方的中心区域的厚度小，所以能够最小化栅电极断裂的发生。 硅层含有两个或更多个惰性气体原子，质量数较小的原子（例如，He）包含在与硅有源层的界面中和附近，而质量数（例如Ar）的原子比较小 质量数量被包含在与栅电极的第二界面中和附近。
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公开(公告)号：US05998838A
公开(公告)日：1999-12-07
申请号：US33609
申请日：1998-03-03
IPC分类号： H01L21/00 , H01L21/339 , H01L21/4763 , H01L21/84 , H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L29/42384 , H01L29/66757 , H01L29/78609 , H01L27/14665
摘要： In a thin film transistor, a first insulating film on a silicon layer formed in an island on a substrate is smaller in thickness than the silicon layer so that the stepped island edges is gentle in slope to facilitate covering the island with a second insulating film. This reduces occurrence of gate leak considerably. Since the peripheral region of the stepped island is smaller in thickness than the central region above the channel, it is possible to minimize occurrence of gate electrode breakage. The silicon layer contains two or more inert gas atoms, and the atoms smaller in mass number (e.g., He) are contained in and near an interface with a silicon active layer while the atoms larger in mass number (e.g., Ar) than those smaller in mass number are contained in and near a second interface with a gate electrode.
摘要翻译： 在薄膜晶体管中，形成在基板上的岛上的硅层上的第一绝缘膜的厚度比硅层的厚度小，使得台阶状的岛边缘倾斜平缓以便于用第二绝缘膜覆盖岛。 这可以大大减少闸门泄漏的发生。 由于阶梯状岛的周边区域的厚度比通道上方的中心区域的厚度小，所以能够最小化栅电极断裂的发生。 硅层含有两个或更多个惰性气体原子，质量数较小的原子（例如，He）包含在与硅有源层的界面中和附近，而质量数（例如Ar）的原子比较小 质量数量被包含在与栅电极的第二界面中和附近。
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公开(公告)号：US06444508B1
公开(公告)日：2002-09-03
申请号：US09900007
申请日：2001-07-09
IPC分类号： H01L2184
CPC分类号： H01L29/42384 , H01L27/14665 , H01L29/66757 , H01L29/78609
摘要： In a thin film transistor, a first insulating film on a silicon layer formed in an island on a substrate is smaller in thickness than the silicon layer so that the stepped island edges is gentle in slope to facilitate covering the island with a second insulating film. This reduces occurrence of gate leak considerably. Since the peripheral region of the stepped island is smaller in thickness than the central region above the channel, it is possible to minimize occurrence of gate electrode breakage. The silicon layer contains two or more inert gas atoms, and the atoms smaller in mass number (e.g., He) are contained in and near an interface with a silicon active layer while the atoms larger in mass number (e.g., Ar) than those smaller in mass number are contained in and near a second interface with a gate electrode.
摘要翻译： 在薄膜晶体管中，形成在基板上的岛上的硅层上的第一绝缘膜的厚度比硅层的厚度小，使得台阶状的岛边缘倾斜平缓以便于用第二绝缘膜覆盖岛。 这可以大大减少闸门泄漏的发生。 由于阶梯状岛的周边区域的厚度比通道上方的中心区域的厚度小，所以能够最小化栅电极断裂的发生。 硅层含有两个或更多个惰性气体原子，质量数较小的原子（例如，He）包含在与硅有源层的界面中和附近，而质量数（例如Ar）的原子比较小 质量数量被包含在与栅电极的第二界面中和附近。
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公开(公告)号：US06258638B1
公开(公告)日：2001-07-10
申请号：US09451867
申请日：1999-12-01
IPC分类号： H01L2100
CPC分类号： H01L29/42384 , H01L27/14665 , H01L29/66757 , H01L29/78609
摘要： In a thin film transistor, a first insulating film on a silicon layer formed in an island on a substrate is smaller in thickness than the silicon layer so that the stepped island edges is gentle in slope to facilitate covering the island with a second insulating film. This reduces occurrence of gate leak considerably. Since the peripheral region of the stepped island is smaller in thickness than the central region above the channel, it is possible to minimize occurrence of gate electrode breakage. The silicon layer contains two or more inert gas atoms, and the atoms smaller in mass number (e.g., He) are contained in and near an interface with a silicon active layer while the atoms larger in mass number (e.g., Ar) than those smaller in mass number are contained in and near a second interface with a gate electrode.
摘要翻译： 在薄膜晶体管中，形成在基板上的岛上的硅层上的第一绝缘膜的厚度比硅层的厚度小，使得台阶状的岛边缘倾斜平缓以便于用第二绝缘膜覆盖岛。 这可以大大减少闸门泄漏的发生。 由于阶梯状岛的周边区域的厚度比通道上方的中心区域的厚度小，所以能够最小化栅电极断裂的发生。 硅层含有两个或更多个惰性气体原子，质量数较小的原子（例如，He）包含在与硅有源层的界面中和附近，而质量数（例如Ar）的原子比较小 质量数量被包含在与栅电极的第二界面中和附近。
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公开(公告)号：US08446424B2
公开(公告)日：2013-05-21
申请号：US13540742
申请日：2012-07-03
申请人： Yoshinobu Sato
发明人： Yoshinobu Sato
IPC分类号： G09G5/02
CPC分类号： H04N5/23293 , H04N19/187 , H04N19/59 , H04N19/60
摘要： An image processing apparatus and method converts a moving image signal into an image data format consisting of a luminance signal and a color-difference signal like that of the YUV format at a signal processing circuit 4, compression-encodes the image data at a compression circuit 10 and records it on a recording medium 11, in addition to reducing the same-format image data color-difference signal to generate image data for display, enabling the image processing apparatus for recording a moving image to achieve moving image recording of a quality that is good enough to be used as still images.
摘要翻译： 图像处理装置和方法在信号处理电路4将运动图像信号转换成类似于YUV格式的亮度信号和色差信号的图像数据格式，对压缩电路的图像数据进行压缩编码 并且将其记录在记录介质11上，除了减少相同格式的图像数据色差信号以产生用于显示的图像数据之外，使图像处理装置能够记录运动图像，以实现运动图像记录质量的运动图像记录 足够好用作静止图像。
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6.发明授权Image capture apparatus having display displaying correctly oriented images based on orientation of display, image display method of displaying correctly oriented images, and program 有权具有基于显示方向显示正确定向的图像的图像捕获装置，显示正确定向的图像的图像显示方法和程序公开(公告)号：US07414657B2
公开(公告)日：2008-08-19
申请号：US10950884
申请日：2004-09-27
申请人： Yoshinobu Sato
发明人： Yoshinobu Sato
IPC分类号： H04N5/222
CPC分类号： H04N5/23293 , H04N5/23203
摘要： An image capture apparatus capable of generating a mirror image of a captured image and superimposing character patterns on the mirror image. The image capture apparatus includes an image capture device and a display device. The display device is rotatably coupled to the image capture device such that the display device can rotate between a normal position and self-portrait position. When in the self-portrait position, the display device displays a mirror image of the captured image, a superimposed character pattern, and an operation condition pattern. Furthermore, the image capture apparatus includes operation devices that are inhibited from operating by a user when in the self-portrait mode.
摘要翻译： 能够产生拍摄图像的镜像并将字符图案叠加在镜像上的图像拍摄装置。 图像捕获装置包括图像捕获装置和显示装置。 显示装置可旋转地联接到图像捕获装置，使得显示装置可以在正常位置和自画像位置之间旋转。 当处于自画像位置时，显示装置显示拍摄图像的镜像，叠加的字符图案和操作条件图案。 此外，图像捕获装置包括当处于自拍模式时被用户禁止操作的操作装置。
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7.发明申请LATERAL INSULATED GATE BIPOLAR TRANSISTOR HAVING A RETROGRADE DOPING PROFILE IN BASE REGION AND METHOD OF MANUFACTURE THEREOF 有权具有基底区域中的重新加工型材的侧向绝缘栅双极晶体管及其制造方法公开(公告)号：US20080135972A1
公开(公告)日：2008-06-12
申请号：US11943614
申请日：2007-11-21
申请人： Teruhisa Ikuta , Yoshinobu Sato
发明人： Teruhisa Ikuta , Yoshinobu Sato
IPC分类号： H01L29/739 , H01L21/331
CPC分类号： H01L29/66325 , H01L29/1095 , H01L29/7393
摘要： In a semiconductor device of the present invention, a first base region 16 is extended to a part under a gate electrode 7 while having a vertical concentration profile of an impurity that increases from the surface of a semiconductor layer 3 and becomes maximum under an emitter region 5, and the length in the lateral direction from a point where the impurity concentration becomes maximum located under an end of the gate electrode 7 to the boundary with a second base region is is not smaller than the length in the vertical direction from the point where the impurity concentration becomes maximum to the boundary with the second base region 15.
摘要翻译： 在本发明的半导体器件中，第一基极区域16延伸到栅电极7下方的部分，同时具有从半导体层3的表面增加的杂质的垂直浓度分布，并且在发射极区域处变为最大值 如图5所示，并且从位于栅电极7的端部附近的杂质浓度变为最大的点到与第二基极区域的边界的横向方向上的长度不小于从垂直方向 杂质浓度最大化为与第二基极区域15的边界。
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公开(公告)号：US07342283B2
公开(公告)日：2008-03-11
申请号：US11370038
申请日：2006-03-08
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/1203 , H01L21/76264 , H01L29/0696 , H01L29/086 , H01L29/0878 , H01L29/42364 , H01L29/42368 , H01L29/7824
摘要： An object of the present invention is to provide a semiconductor device which enables to reduce the device area, while securing the breakdown voltage between the drain and the source of each MOS transistor for the semiconductor device including plural MOS transistors, which are arrayed adjacently each other, with different types of channel conductivity. The semiconductor device includes a semiconductor substrate, a buried oxide film and a semiconductor layer, and furthermore the semiconductor layer has an island-like semiconductor layer, in which a MOS transistor is formed, the MOS transistor has a source region, and a drain region that is positioned in the periphery of the source region, an island-like semiconductor layer, in which a MOS transistor is formed, the MOS transistor has a drain region, and a source region that is positioned in the periphery of the drain region, an isolation trench which isolates the former island-like semiconductor layer from other portions of the semiconductor layer, an isolation trench which isolates the latter island-like semiconductor layer from other portions of the semiconductor layer, and a buffer region, in which the electric potential is fixed to the lowest electric potential in a circuit, which prevents an electrical interference occurred between transistors.
摘要翻译： 本发明的目的是提供一种半导体器件，其能够在确保包括多个相互排列的多个MOS晶体管的半导体器件的每个MOS晶体管的漏极和源极之间的击穿电压的同时，减小器件面积 ，具有不同类型的通道电导率。 半导体器件包括半导体衬底，掩埋氧化物膜和半导体层，此外，半导体层具有形成MOS晶体管的岛状半导体层，MOS晶体管具有源极区域和漏极区域 位于源极区域的外围的岛状半导体层，形成有MOS晶体管的岛状半导体层，MOS晶体管具有漏极区域和位于漏极区域的周围的源极区域， 将前述岛状半导体层与半导体层的其他部分隔离的隔离沟槽，将后述的岛状半导体层与半导体层的其他部分隔离的隔离沟槽和电位为 固定在电路中的最低电位，这防止晶体管之间发生电干扰。
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公开(公告)号：US20060062751A1
公开(公告)日：2006-03-23
申请号：US10541361
申请日：2003-12-26
IPC分类号： C07C233/05 , A61K8/42
CPC分类号： C11D1/10 , A61K8/44 , A61K2800/59 , A61Q5/02 , A61Q19/10
摘要： The invention relates to a novel surfactant which is obtained by blending an N—C8-24 acylamino acid and an alkali salt of an amino acid, and also relates to a detergent composition comprising this surfactant as a cleansing component and an emulsion composition comprising this surfactant as an emulsifying component. In the alkali salt of an amino acid, a suitable amino acid is an acidic or neutral α-amino acid, and a suitable alkali is sodium, potassium, triethanolamine, or N-methyltaurine sodium. In the N—C8-24 acylamino acid, a suitable amino acid is acidic or neutral, and a suitable C8-24 acyl is a C12-18 acyl. This surfactant can provide a detergent composition which ensures good lathering ability and foam quality and which does not cause stiff hair or taut skin after use. The surfactant can also provide an emulsion composition which ensures a good emulsion state.
摘要翻译： 本发明涉及通过混合NC 8-24酰基氨基酸和氨基酸的碱金属盐获得的新型表面活性剂，还涉及包含该表面活性剂作为清洁组分的洗涤剂组合物和 包含该表面活性剂作为乳化组分的乳液组合物。 在氨基酸的碱金属盐中，合适的氨基酸是酸性或中性α-氨基酸，合适的碱是钠，钾，三乙醇胺或N-甲基牛磺酸钠。 在NC 8-24酰基氨基酸中，合适的氨基酸是酸性或中性的，合适的C 8-24酰基是C 12-18烷基， 酰基。 该表面活性剂可以提供确保良好的起泡能力和泡沫质量的洗涤剂组合物，并且在使用后不会引起僵硬的头发或绷紧的皮肤。 表面活性剂还可以提供确保良好乳液状态的乳液组合物。
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公开(公告)号：US06960898B2
公开(公告)日：2005-11-01
申请号：US10942943
申请日：2004-09-17
申请人： Yoshinobu Sato
发明人： Yoshinobu Sato
CPC分类号： H02P27/047 , H02P21/00 , H02P29/032 , H02P2207/05
摘要： A control unit is provided that controls a motor that opens and closes a door of an electric train such that, if an abnormality is detected by a position sensor, continuation of its open/closing operation can be maintained. The control unit includes an arrangement for computing the actual rotation speed and the magnetic polar position of the motor; a position sensor abnormality-detecting identifier unit for detecting abnormalities in the output of the position sensor; and a first controlling arrangement that generates voltage-instructing values by applying the magnetic polar position so as to cause a speed detection value to correspond to the speed instruction value. The control unit further includes a second controlling arrangement, which in turn includes an F/V arithmetic unit 24 and integrator 25; and a switcher unit 27. The F/V arithmetic unit 24 generates a voltage instruction value having a specific magnitude and phase corresponding to the speed instruction value by utilization of magnetic polar position data that is obtained via integration of a frequency corresponding to the speed instruction value. The switcher unit 27 selects either of the first and second controlling arrangements so as to generate voltage-instructing values for a power converter 3. When the output of the position sensor is normal, the switcher unit 27 selects a specific voltage-instructing value delivered from the first controlling arrangement, whereas if the position of the sensor 5 is abnormal, the switcher unit 27 selects a specific voltage-instructing value delivered from the second controlling arrangement.
摘要翻译： 提供一种控制单元，其控制打开和关闭电动列车的门的马达，使得如果通过位置传感器检测到异常，则可以保持其打开/关闭操作的继续。 控制单元包括用于计算电动机的实际转速和磁极位置的装置; 位置传感器异常检测识别单元，用于检测所述位置传感器的输出中的异常; 以及第一控制装置，其通过施加磁极位置来产生电压指令值，以使速度检测值对应于速度指令值。 控制单元还包括第二控制装置，该装置又包括F / V运算单元24和积分器25; 和切换单元27。 F / V运算单元24通过利用通过与速度指令值相对应的频率的积分而获得的磁极位置数据，生成具有与速度指令值相对应的特定幅度和相位的电压指令值。 切换单元27选择第一和第二控制装置中的任一个，以产生功率转换器3的电压指令值。 当位置传感器的输出正常时，切换单元27选择从第一控制装置发送的特定电压指令值，而如果传感器5的位置异常，则切换单元27选择特定的电压指令值 从第二控制安排交付。
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