公开(公告)号：US20050031780A1

公开(公告)日：2005-02-10

申请号：US10873624

申请日：2004-06-23

Applicant: Isao Matsui

Inventor： Isao Matsui

IPC: C01B19/04 ,  B01J2/00 ,  B01J2/04 ,  B01J19/00 ,  B82Y30/00 ,  B82Y40/00 ,  B82Y99/00 ,  C01B33/027 ,  C01G23/07 ,  H01M4/02 ,  H01M4/36 ,  H01M4/38 ,  H01M4/40 ,  B05D7/00

CPC classification number: H01M4/134 ,  B01J2/003 ,  B01J2/04 ,  H01M4/366 ,  H01M4/38 ,  H01M4/405

Abstract: A method of forming a particle comprises the steps of: forming a droplet containing a first material; forming a core portion by heating the droplet to thermally decompose in a reaction vessel; and forming a shell portion which coats the core portion by heating a raw material gas containing a second material which differs from the first material to thermally decompose in the reaction vessel.

Abstract translation: 形成颗粒的方法包括以下步骤：形成包含第一材料的液滴; 通过加热液滴在反应容器中热分解形成核心部分; 并且通过加热含有与第一材料不同的第二材料的原料气体在反应容器中热分解而形成包覆芯部的壳部分。

公开(公告)号：US06333246B1

公开(公告)日：2001-12-25

申请号：US09604722

申请日：2000-06-28

Applicant: Masaki Narita ,  Yukimasa Yoshida ,  Katsuaki Aoki ,  Hiroshi Fujita ,  Osamu Yamazaki ,  Toshimitsu Omine ,  Isao Matsui ,  Takashi O

Inventor： Masaki Narita ,  Yukimasa Yoshida ,  Katsuaki Aoki ,  Hiroshi Fujita ,  Osamu Yamazaki ,  Toshimitsu Omine ,  Isao Matsui ,  Takashi O

IPC: H01L2120

CPC classification number: H01J37/321 ,  C23C16/4401 ,  C23C16/50 ,  H01L21/31116

Abstract: A semiconductor device manufacturing method comprises the steps of placing a substrate to be processed on an electrostatic chuck on a substrate stand in a process chamber, and applying a negative voltage to the electrostatic chuck. After applying the negative voltage, the substrate is stuck onto the electrostatic chuck, a process gas is introduced into the process chamber, discharge plasma is generated, and the substrate is processed as predetermined.

Abstract translation: 半导体器件制造方法包括以下步骤：将处理的基板放置在处理室中的基板支架上的静电卡盘上，并向静电卡盘施加负电压。 在施加负电压之后，将基板粘贴到静电卡盘上，将处理气体引入到处理室中，产生放电等离子体，并且如预定的那样处理基板。

公开(公告)号：US5403630A

公开(公告)日：1995-04-04

申请号：US141636

申请日：1993-10-27

Applicant: Isao Matsui ,  Akio Ui

Inventor： Isao Matsui ,  Akio Ui

IPC: H01L21/205 ,  C23C16/40 ,  C23C16/44 ,  C23C16/452 ,  H01L21/31 ,  B05D3/06 ,  C23C16/00

CPC classification number: C23C16/402 ,  C23C16/452

Abstract: A vapor-phase growth method comprising the steps of introducing a silicon-containing gas and ozone into a reaction vessel containing a sample, and introducing excited oxygen obtained by exciting an oxygen gas or an oxygen-containing gas, into the reaction vessel at the same the as, before, or after the silicon-containing gas and the ozone are introduced into the reaction vessel. The silicon-containing gas and the ozone react, forming an intermediate product which can readily condense. The intermediate product reacts with the excited oxygen, thereby forming a thin insulating film which excels in step coverage and has good insulating property.

Abstract translation: 一种气相生长方法，包括以下步骤：将含硅气体和臭氧引入含有样品的反应容器中，并将通过将氧气或含氧气体激发而获得的激发氧引入反应容器中 将含硅气体和臭氧引入反应容器中之前，之前或之后。 含硅气体和臭氧反应，形成可以容易冷凝的中间产物。 中间产物与激发的氧反应，从而形成薄的绝缘膜，其具有优异的台阶覆盖性和良好的绝缘性能。