Abstract:
A semiconductor memory device is capable of performing a test operation in its various operation modes. Particularly, the semiconductor memory device can enter a test mode in other modes, as well as, an all bank pre-charge mode. The semiconductor memory device includes a test mode control block configured to generate a test signal enabled for a predetermined interval in an active mode, and a mode register set control block configured to enable a mode register set signal for a test operation in the predetermined interval in response to the test signal.
Abstract:
A voltage stabilization circuit of a semiconductor memory apparatus includes an operation speed detecting unit configured to detect an operation speed of the semiconductor memory apparatus to generate a detection signal, and a voltage line controlling unit configured to interconnect a first voltage line and a second voltage line in response to the detection signal.
Abstract:
A method to divide a file or merge files using a file allocation table (FAT) in which the method to divide a file includes storing data of a first cluster, among data intended to be separated from the file, into a second cluster, and generating a first cluster chain and a second cluster chain using a file allocation table (FAT), the first cluster chain containing data remaining in the first cluster, and the second cluster containing data existing in the second cluster. As a result, time delay due to a file copy process and shortening of a lifespan of NAND flash are prevented, and a reserve capacity for editing purposes is minimized.
Abstract:
A power generation system includes a compression unit which compresses a gas, a storage which stores the compressed gas output from the compression unit, a first expansion unit which generates first power and outputs a first exhaust gas, a heating unit which heats at least the stored gas output from the storage, a second expansion unit which generates second power and outputs a second exhaust gas, a first regenerator which performs a first heat exchange between the second exhaust gas and the stored gas output from the storage, to generate a first heat exchange gas used to generate the first power and a first regenerator gas, and a second regenerator which performs a second heat exchange between the first exhaust gas and the first regenerator gas to generate a second heat exchange gas used to generate the second power after heated at the heating unit.
Abstract:
A semiconductor system includes a controller configured to apply code signals for setting levels of a reference voltage and data, and to receive output data. The semiconductor system also includes a semiconductor device configured to receive the data for the respective levels of the reference voltage set according to the code signals, to compare the reference voltages with the data to generate new data, to store the new data as internal data, and to process the stored internal data to output as the output data.
Abstract:
A semiconductor device includes a data storage unit configured to receive input data, outputs the input data with a difference in voltage level between logic levels, and output comparison data whose logic level is distinguished from the input data; a test operation unit configured to determine a logic level of test data periodically in response to a data reference voltage whose voltage level is determined in response to a level test code during a test operation period defined by a test entry command and a test exit command, and generate a test result signal by comparing a logic level of the comparison data with the logic level of the test data; and a test operation sensing signal generation unit configured to generate a test operation sensing signal that is activated in response to the test entry command and inactivated in response to the test result signal.
Abstract:
A semiconductor system includes a controller configured to apply code signals for setting levels of a reference voltage and data, and to receive output data. The semiconductor system also includes a semiconductor device configured to receive the data for the respective levels of the reference voltage set according to the code signals, to compare the reference voltages with the data to generate new data, to store the new data as internal data, and to process the stored internal data to output as the output data.
Abstract:
An integrated circuit includes a reference voltage level setting circuit and a reference voltage generation circuit. The reference voltage level setting circuit is configured to set a level of an input reference voltage to a preset level in a power-up period or a self-refresh mode. The reference voltage generation circuit is configured to select one of a plurality of reference voltages and output the selected reference voltage as the input reference voltage when the power-up period is ended and an operation mode is not in the self-refresh mode.
Abstract:
A voltage stabilization circuit of a semiconductor memory apparatus includes an operation speed detecting unit configured to detect an operation speed of the semiconductor memory apparatus to generate a detection signal, and a voltage line controlling unit configured to interconnect a first voltage line and a second voltage line in response to the detection signal.