Abstract:
A semiconductor apparatus includes a comparison voltage generation unit configured to generate a plurality of different comparison voltages, a reference voltage generation unit configured to receive a generation code from an external system, select one of the plurality of the different comparison voltages according to the generation code, and generate a reference voltage, and a reference voltage determination unit configured to receive the generation code and an expected reference voltage from the external system, check whether a level of the expected reference voltage is in a target range, and output a check result to the external system.
Abstract:
A semiconductor device includes a data storage unit configured to receive input data, outputs the input data with a difference in voltage level between logic levels, and output comparison data whose logic level is distinguished from the input data; a test operation unit configured to determine a logic level of test data periodically in response to a data reference voltage whose voltage level is determined in response to a level test code during a test operation period defined by a test entry command and a test exit command, and generate a test result signal by comparing a logic level of the comparison data with the logic level of the test data; and a test operation sensing signal generation unit configured to generate a test operation sensing signal that is activated in response to the test entry command and inactivated in response to the test result signal.
Abstract:
A method for converting a sink device and an apparatus for providing a content using the same are provided. The method for converting the sink device includes receiving a sink device conversion command from a first sink device, transmitting the content to a second sink device if a conversion approval of the sink device is received from the second sink device, and transmitting a control authority related to a content provision from the first sink device to the second sink device.
Abstract:
A semiconductor memory device is capable of performing a test operation in its various operation modes. Particularly, the semiconductor memory device can enter a test mode in other modes, as well as, an all bank pre-charge mode. The semiconductor memory device includes a test mode control block configured to generate a test signal enabled for a predetermined interval in an active mode, and a mode register set control block configured to enable a mode register set signal for a test operation in the predetermined interval in response to the test signal.
Abstract:
A power generation system includes a compression unit which compresses a gas, a storage which stores the compressed gas output from the compression unit, a first expansion unit which generates first power and outputs a first exhaust gas, a heating unit which heats at least the stored gas output from the storage, a second expansion unit which generates second power and outputs a second exhaust gas, a first regenerator which performs a first heat exchange between the second exhaust gas and the stored gas output from the storage, to generate a first heat exchange gas used to generate the first power and a first regenerator gas, and a second regenerator which performs a second heat exchange between the first exhaust gas and the first regenerator gas to generate a second heat exchange gas used to generate the second power after heated at the heating unit.
Abstract:
A method of testing a semiconductor memory device comprises receiving a clock, addresses, commands, and data from a test device through channels, generating an internal bank address in response to the addresses and the commands, performing a multi-bit parallel test for each of a plurality of banks based on the addresses, the commands, the data, and the internal bank address, and providing the test device with a test result signal.
Abstract:
A data output circuit of a semiconductor memory apparatus includes: a data control driver configured to drive rising data and falling data to output control rising data and control falling data or drive level data to output the control rising data and the control falling data, in response to an output level test signal; a DLL clock control unit configured to drive a rising clock and a falling clock to output a control rising clock and a control falling clock in response to an enable signal and the output level test signal; and a clock synchronization unit configured to synchronize the control rising data and the control falling data with the control rising clock and the control falling clock to output serial rising data and serial falling data.
Abstract:
A voltage stabilization circuit of a semiconductor memory apparatus includes an operation speed detecting unit configured to detect an operation speed of the semiconductor memory apparatus to generate a detection signal, and a voltage line controlling unit configured to interconnect a first voltage line and a second voltage line in response to the detection signal.
Abstract:
A method for conducting reference voltage training includes setting levels of a reference voltage in response to code signals and receiving and storing data for the respective levels of the reference voltage, and simultaneously outputting the stored data.
Abstract:
A method of testing a semiconductor memory device comprises receiving a clock, addresses, commands, and data from a test device through channels, generating an internal bank address in response to the addresses and the commands, performing a multi-bit parallel test for each of a plurality of banks based on the addresses, the commands, the data, and the internal bank address, and providing the test device with a test result signal.