公开(公告)号：US08999812B2

公开(公告)日：2015-04-07

申请号：US13475098

申请日：2012-05-18

Applicant: Wenxu Xianyu ,  Chang-youl Moon ,  Jeong-yub Lee ,  Chang-seung Lee

Inventor： Wenxu Xianyu ,  Chang-youl Moon ,  Jeong-yub Lee ,  Chang-seung Lee

IPC: H01L29/16 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/78684 ,  H01L27/1266 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/78603

Abstract: A graphene device may include a channel layer including graphene, a first electrode and second electrode on a first region and second region of the channel layer, respectively, and a capping layer covering the channel layer and the first and second electrodes. A region of the channel layer between the first and second electrodes is exposed by an opening in the capping layer. A gate insulating layer may be on the capping layer to cover the region of the channel layer, and a gate may be on the gate insulating layer.

Abstract translation: 石墨烯装置可以分别包括在沟道层的第一区域和第二区域上的包括石墨烯，第一电极和第二电极的沟道层，以及覆盖沟道层和第一和第二电极的覆盖层。 第一和第二电极之间的沟道层的区域被覆盖层中的开口暴露。 栅极绝缘层可以在覆盖层上以覆盖沟道层的区域，并且栅极可以在栅极绝缘层上。

公开(公告)号：US20130252410A1

公开(公告)日：2013-09-26

申请号：US13599980

申请日：2012-08-30

Applicant: Xianyu WENXU ,  Jeong-Yub LEE ,  Chang -Youl MOON ,  Yong-Young PARK ,  Woo Young YANG ,  Jae-Joon OH ,  In-Jun HWANG

Inventor： Xianyu WENXU ,  Jeong-Yub LEE ,  Chang -Youl MOON ,  Yong-Young PARK ,  Woo Young YANG ,  Jae-Joon OH ,  In-Jun HWANG

IPC: H01L21/28 ,  H01L21/18 ,  H01L21/283

CPC classification number: H01L21/268 ,  H01L21/28575 ,  H01L21/3245 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/517 ,  H01L29/66462

Abstract: A method for forming a selective ohmic contact for a Group III-nitride heterojunction structured device may include forming a conductive layer and a capping layer on an epitaxial substrate including at least one Group III-nitride heterojunction layer and having a defined ohmic contact region, the capping layer being formed on the conductive layer or between the conductive layer and the Group III-nitride heterojunction layer in one of the ohmic contact region and non-ohmic contact region, and applying at least one of a laser annealing process and an induction annealing process on the substrate at a temperature of less than or equal to about 750° C. to complete the selective ohmic contact in the ohmic contact region.

Abstract translation: 用于形成用于III族氮化物异质结结构器件的选择性欧姆接触的方法可包括在包括至少一个III族氮化物异质结层并且具有限定的欧姆接触区域的外延衬底上形成导电层和覆盖层， 覆盖层形成在导电层之间或在欧姆接触区域和非欧姆接触区域之一的导电层和III族氮化物异质结层之间，并且施加激光退火工艺和感应退火工艺中的至少一个 在小于或等于约750℃的温度下在衬底上完成欧姆接触区域中的选择性欧姆接触。

公开(公告)号：US20130105863A1

公开(公告)日：2013-05-02

申请号：US13489733

申请日：2012-06-06

Applicant: Jeong-yub Lee ,  Wenxu Xianyu ,  Chang-youl Moon ,  Yong-young Park ,  Woo-young Yang ,  In-jun Hwang

Inventor： Jeong-yub Lee ,  Wenxu Xianyu ,  Chang-youl Moon ,  Yong-young Park ,  Woo-young Yang ,  In-jun Hwang

IPC: H01L29/778 ,  H01L21/338 ,  B82Y99/00

CPC classification number: H01L21/28264 ,  H01L29/0843 ,  H01L29/2003 ,  H01L29/42364 ,  H01L29/49 ,  H01L29/66462 ,  H01L29/7787

Abstract: An electrode structure, a GaN-based semiconductor device including the electrode structure, and methods of manufacturing the same, may include a GaN-based semiconductor layer and an electrode structure on the GaN-based semiconductor layer. The electrode structure may include an electrode element including a conductive material and a diffusion layer between the electrode element and the GaN-based semiconductor layer. The diffusion layer may include a material which is an n-type dopant with respect to the GaN-based semiconductor layer, and the diffusion layer may contact the GaN-based semiconductor layer. A region of the GaN-based semiconductor layer contacting the diffusion layer may be doped with the n-type dopant. The material of the diffusion layer may comprise a Group 4 element.

Abstract translation: 包括电极结构的电极结构，GaN基半导体器件及其制造方法可以包括在GaN基半导体层上的GaN基半导体层和电极结构。 电极结构可以包括在电极元件和GaN基半导体层之间包括导电材料的电极元件和扩散层。 扩散层可以包括相对于GaN基半导体层为n型掺杂剂的材料，并且扩散层可以接触GaN基半导体层。 与扩散层接触的GaN基半导体层的区域可以掺杂有n型掺杂剂。 扩散层的材料可以包括第4族元素。

公开(公告)号：US20130052394A1

公开(公告)日：2013-02-28

申请号：US13562968

申请日：2012-07-31

Applicant: Jeong-yub Lee

Inventor： Jeong-yub Lee

IPC: B81B7/02 ,  B32B38/10 ,  B32B37/30 ,  G02B3/12 ,  B32B3/08

CPC classification number: B81C1/00269 ,  B81C2201/112 ,  B81C2203/019 ,  B81C2203/036 ,  G02B3/12 ,  G02B26/0833 ,  Y10T428/23 ,  Y10T428/234

Abstract: A wafer-level passivation structure of a micro-device, a micro-device including the same, and methods of manufacturing the wafer-level passivation structure and the micro-device may be provided. In particular, the passivation structure may include a spacer that is disposed on a substrate, covers a portion of the first surface, and has an elastic property, and an anti-adhesion layer that is disposed on a surface of the substrate between the spacer. The spacer may form a lattice pattern. The spacer may be formed of a silicon. The anti-adhesion layer may be a metallic film, an oxide film, or a nitride film.

Abstract translation: 可以提供微器件的晶片级钝化结构，包括微晶器件的微器件以及制造晶片级钝化结构和微器件的方法。 特别地，钝化结构可以包括设置在基板上，覆盖第一表面的一部分并且具有弹性的间隔物，以及设置在间隔件之间的基板的表面上的防粘附层。 间隔物可以形成格子图案。 间隔物可以由硅形成。 抗粘附层可以是金属膜，氧化膜或氮化物膜。

公开(公告)号：US08313197B2

公开(公告)日：2012-11-20

申请号：US12487688

申请日：2009-06-19

Applicant: Jeong-yub Lee ,  Seung-wan Lee ,  Woon-bae Kim ,  Seung-tae Choi

Inventor： Jeong-yub Lee ,  Seung-wan Lee ,  Woon-bae Kim ,  Seung-tae Choi

IPC: G03B21/26 ,  G03B3/00 ,  G02B1/06 ,  G02B3/12

CPC classification number: G01B11/25 ,  G02B3/14 ,  G02B26/004

Abstract: A pattern projecting apparatus usable with a three-dimensional imaging apparatus includes a light generator which emits a light beam, and a pattern adjusting unit disposed in front of the light generator. The pattern adjusting unit forms a projection pattern on an object, and adjusts a focus of the light beam emitted from the light generator.

Abstract translation: 可用于三维成像设备的图案投影设备包括发射光束的光发生器和布置在光发生器前面的图案调整单元。 图案调整单元在物体上形成投影图案，并且调节从光发生器发射的光束的焦点。

公开(公告)号：US08305699B2

公开(公告)日：2012-11-06

申请号：US12873461

申请日：2010-09-01

Applicant: Seung-Wan Lee ,  Woon-Bae Kim ,  Jeong-Yub Lee

Inventor： Seung-Wan Lee ,  Woon-Bae Kim ,  Jeong-Yub Lee

IPC: G02B9/00

CPC classification number: H04N5/2254 ,  G02B13/0035 ,  G02B13/0085 ,  H04N5/2257

Abstract: A wafer-level lens module with an extended depth of field (EDF) and an imaging device including the wafer-level lens module are provided. The wafer-level EDF lens module includes a plurality of wafer-scale lenses stacked with fixed distances therebetween. The plurality of wafer-scale lenses includes an effective lens having a profile which satisfies a corrected optimized aspheric function, wherein a profile of a center region of the effective lens is optimized for an infinity-focused image and a profile of an edge region of the effective lens is optimized for a macro-focused image.

Abstract translation: 提供具有扩展景深（EDF）的晶片级透镜模块和包括晶片级透镜模块的成像装置。 晶片级EDF透镜模块包括在其间具有固定距离堆叠的多个晶片级透镜。 多个晶片级透镜包括具有满足校正的优化非球面函数的轮廓的有效透镜，其中有效透镜的中心区域的轮廓对于无限远聚焦的图像和边缘区域的轮廓进行了优化 有效镜头针对宏观聚焦图像进行了优化。

公开(公告)号：US20110051254A1

公开(公告)日：2011-03-03

申请号：US12784625

申请日：2010-05-21

Applicant: Jeong-yub LEE ,  Cheol-min PARK ,  Seung-tae CHOI ,  Seung-wan LEE ,  Jong-oh KWON ,  Hee-joon JUNG

Inventor： Jeong-yub LEE ,  Cheol-min PARK ,  Seung-tae CHOI ,  Seung-wan LEE ,  Jong-oh KWON ,  Hee-joon JUNG

IPC: G02B3/14 ,  G02B3/12

CPC classification number: G02B3/14 ,  C08G77/04 ,  C08G77/16

Abstract: A variable-focus liquid lens is provided. The liquid lens includes a membrane and a fluid. The membrane is made of a transparent elastomer, and the fluid fills a predetermined space to contact at least a lens surface of the membrane. The membrane and the fluid are respectively made of materials repulsive to each other, for example, hydrophilic and hydrophobic materials or oleophilic and oleophobic materials. Accordingly, a repulsive force between the fluid and the membrane can prevent the absorption or leaking of the fluid into/through the membrane.

Abstract translation: 提供了可变焦点液体透镜。 液体透镜包括膜和流体。 膜由透明弹性体制成，并且流体填充预定空间以接触膜的至少透镜表面。 膜和流体分别由彼此排斥的材料制成，例如亲水和疏水材料或亲油和疏油材料。 因此，流体和膜之间的排斥力可以防止流体进入/穿过膜的吸收或泄漏。

公开(公告)号：US20090097140A1

公开(公告)日：2009-04-16

申请号：US12036316

申请日：2008-02-25

Applicant: Seung-tae Choi ,  Tae-sang Park ,  Jeong-yub Lee ,  Jong-oh Kwon ,  Che-heung Kim ,  Seung-wan Lee ,  Woon-bae Kim

Inventor： Seung-tae Choi ,  Tae-sang Park ,  Jeong-yub Lee ,  Jong-oh Kwon ,  Che-heung Kim ,  Seung-wan Lee ,  Woon-bae Kim

IPC: G02B7/02

CPC classification number: G02B7/08

Abstract: A varifocal optical device is provided. The varifocal optical device includes an optical lens, an actuator unit connected with the optical lens and having two areas that are bending-deformed in opposite directions to each other when a voltage is applied thereto, and a supporting unit to support the actuator unit, so that a focus of the optical lens is varied by the bending deformation when the voltage is applied to the actuator unit. Thereby, a driving displacement of the varifocal optical lens can be maximized.

Abstract translation: 提供变焦光学装置。 变焦光学装置包括光学透镜，与光学透镜连接的致动器单元，并且当施加电压时具有彼此相反方向弯曲变形的两个区域，以及支撑单元以支撑致动器单元，因此 当将电压施加到致动器单元时，光学透镜的焦点因弯曲变形而变化。 从而可以使变焦光学透镜的驱动位移最大化。

公开(公告)号：US20080089005A1

公开(公告)日：2008-04-17

申请号：US11730642

申请日：2007-04-03

Applicant: Seung-tae Choi ,  Ji-hyuk Lim ,  Woon-bae Kim ,  Eun-seok Park ,  Jeong-yub Lee

Inventor： Seung-tae Choi ,  Ji-hyuk Lim ,  Woon-bae Kim ,  Eun-seok Park ,  Jeong-yub Lee

IPC: H01G5/011 ,  H01G5/00

CPC classification number: H01G5/0132

Abstract: A tunable capacitor using an electrowetting phenomenon includes a first electrode; a second electrode which is spaced apart from the first electrode and faces the first electrode; a fluidic channel which is disposed between the first electrode and the second electrode; a first insulating layer which is disposed between the first electrode and the fluidic channel; and a conductive fluid which is disposed in the fluidic channel and moves along the fluidic channel when a direct current (DC) potential difference occurs between the first and second electrodes. Accordingly, it is possible to fabricate the tunable capacitor with the simplified fabrication process, good reliability and durability, and no restriction on the tuning range.

Abstract translation: 使用电润湿现象的可调谐电容器包括第一电极; 第二电极，与第一电极间隔开并面向第一电极; 设置在第一电极和第二电极之间的流体通道; 布置在第一电极和流体通道之间的第一绝缘层; 以及当在第一和第二电极之间发生直流（DC）电位差时，布置在流体通道中并沿着流体通道移动的导电流体。 因此，可以以简化的制造工艺，良好的可靠性和耐久性制造可调电容器，并且对调谐范围没有限制。