公开(公告)号：US20170006246A1

公开(公告)日：2017-01-05

申请号：US15187957

申请日：2016-06-21

Applicant: Katsuhiko AISU ,  Yasukazu NAKATANI ,  Kazuhiro YONEDA ,  Takaaki NEGORO ,  Yoshinori UEDA ,  Katsuyuki SAKURANO

Inventor： Katsuhiko AISU ,  Yasukazu NAKATANI ,  Kazuhiro YONEDA ,  Takaaki NEGORO ,  Yoshinori UEDA ,  Katsuyuki SAKURANO

IPC: H04N5/378 ,  H04N5/225 ,  H01L27/146

CPC classification number: H04N5/378 ,  H01L27/14601 ,  H01L31/1105 ,  H04N5/2253 ,  H04N5/363 ,  H04N5/374

Abstract: A photoelectric conversion device includes a photoelectric conversion unit which includes a phototransistor having a collector region, an emitter region, and a base region to generate an output current according to an intensity of incident light to the phototransistor, and a base potential setting unit which is configured to set up a base potential of the phototransistor so that the output current from the photoelectric conversion unit is equal to a predetermined current value.

Abstract translation: 光电转换装置包括光电转换单元，该光电转换单元包括具有集电极区域，发射极区域和基极区域的光电晶体管，以根据入射到该光电晶体管的入射光强度来产生输出电流;以及基极电位设定单元， 被配置为设置光电晶体管的基极电位，使得来自光电转换单元的输出电流等于预定电流值。

公开(公告)号：US09472706B2

公开(公告)日：2016-10-18

申请号：US14560037

申请日：2014-12-04

Applicant: Katsuyuki Sakurano ,  Takaaki Negoro ,  Katsuhiko Aisu ,  Kazuhiro Yoneda ,  Yasukazu Nakatani ,  Hirofumi Watanabe

Inventor： Katsuyuki Sakurano ,  Takaaki Negoro ,  Katsuhiko Aisu ,  Kazuhiro Yoneda ,  Yasukazu Nakatani ,  Hirofumi Watanabe

IPC: H01L31/113 ,  H01L27/146

CPC classification number: H01L31/1136 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/14643 ,  H01L27/14689

Abstract: A semiconductor device and a method of manufacturing a semiconductor device are disclosed. The method includes forming a trench, in a vertical direction of a semiconductor substrate having a plurality of photoelectric converting elements arranged on the semiconductor device, at positions between the photoelectric converting elements that are next to each other, forming a first conductive-material layer in and above the trench by implanting a first conductive material into the trench after an oxide film is formed on an inner wall of the trench, forming a first conductor by removing the first conductive-material layer excluding a first conductive portion of the first conductive-material layer implanted into the trench, and forming an upper gate electrode above the first conductor, the upper gate electrode configured to be conductive with the first conductor. The semiconductor device includes a semiconductor substrate, an image sensor, a trench, a first conductor, and an upper gate electrode.

Abstract translation: 公开了半导体器件和制造半导体器件的方法。 该方法包括在彼此相邻的光电转换元件之间的位置处形成在具有布置在半导体器件上的多个光电转换元件的半导体衬底的垂直方向上形成沟槽，形成第一导电材料层 并且在沟槽的内壁上形成氧化膜之后，通过将第一导电材料注入到沟槽中并在沟槽之上形成第一导体，通过除去除第一导电材料的第一导电部分之外的第一导电材料层 层，并且在第一导体上形成上栅电极，上栅电极被配置为与第一导体导电。 半导体器件包括半导体衬底，图像传感器，沟槽，第一导体和上部栅电极。

公开(公告)号：US20160247847A1

公开(公告)日：2016-08-25

申请号：US15019451

申请日：2016-02-09

Applicant: Yoshinori Ueda ,  Kazuhiro Yoneda ,  Katsuhiko Aisu ,  Yasukazu Nakatani ,  Takaaki Negoro ,  Katsuyuki Sakurano ,  Hirofumi Watanabe

Inventor： Yoshinori Ueda ,  Kazuhiro Yoneda ,  Katsuhiko Aisu ,  Yasukazu Nakatani ,  Takaaki Negoro ,  Katsuyuki Sakurano ,  Hirofumi Watanabe

IPC: H01L27/146

CPC classification number: H01L27/14683 ,  H01L27/1463 ,  H01L27/14681

Abstract: A semiconductor device includes a semiconductor layer, an electrode embedded from a surface of the semiconductor layer to an inside of the semiconductor layer and insulated by an insulation layer, and a structure in which a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type are formed in this order from the surface of the semiconductor layer along the electrode via the insulation layer. The electrode is arranged at a position where no inversion layer is formed by a voltage supplied to the electrode in at least one of an interface of the first semiconductor region and the second semiconductor region and an interface of the second semiconductor region and the third semiconductor region.

Abstract translation: 半导体器件包括半导体层，从半导体层的表面到半导体层的内部并被绝缘层绝缘的电极，以及其中第一导电类型的第一半导体区域，第二半导体 第二导电类型的区域和第一导电类型的第三半导体区域从半导体层的沿着电极的表面经由绝缘层依次形成。 在第一半导体区域和第二半导体区域的界面中的至少一个以及第二半导体区域和第三半导体区域的界面中的至少一个中，电极被配置在没有形成反转层的位置， 。

公开(公告)号：US20160133763A1

公开(公告)日：2016-05-12

申请号：US14935973

申请日：2015-11-09

Applicant: Takaaki Negoro ,  Yoshinori Ueda ,  Katsuyuki Sakurano ,  Yasukazu Nakatani ,  Kazuhiro Yoneda ,  Katsuhiko Aisu

Inventor： Takaaki Negoro ,  Yoshinori Ueda ,  Katsuyuki Sakurano ,  Yasukazu Nakatani ,  Kazuhiro Yoneda ,  Katsuhiko Aisu

IPC: H01L31/0224 ,  H04N5/378 ,  H04N5/361 ,  H01L31/18 ,  H01L31/0352

CPC classification number: H01L27/14681 ,  H01L27/14612

Abstract: A semiconductor device for converting incident light into an electric current includes a semiconductor substrate; an electrode embedded in the semiconductor substrate; an insulation film contacting the electrode in the semiconductor substrate; a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and a third semiconductor region of the first conductivity type, formed sequentially in a depth direction from a side of a front face of the semiconductor substrate; and a fourth semiconductor region of the second conductivity type contacting the insulation film and the second semiconductor region. An impurity concentration of the fourth semiconductor region is greater than an impurity concentration of the second semiconductor region.

Abstract translation: 将入射光转换为电流的半导体器件包括半导体衬底; 嵌入在半导体衬底中的电极; 与半导体衬底中的电极接触的绝缘膜; 第一导电类型的第一半导体区域，第二导电类型的第二半导体区域和第一导电类型的第三半导体区域沿着从半导体衬底的正面侧的深度方向依次形成; 以及与绝缘膜和第二半导体区域接触的第二导电类型的第四半导体区域。 第四半导体区域的杂质浓度大于第二半导体区域的杂质浓度。

公开(公告)号：US20160126271A1

公开(公告)日：2016-05-05

申请号：US14847567

申请日：2015-09-08

Applicant: Katsuyuki Sakurano ,  Takaaki Negoro ,  Yoshinori Ueda ,  Kazuhiro Yoneda ,  Katsuhiko Aisu ,  Yasukazu Nakatani ,  Hirofumi Watanabe

Inventor： Katsuyuki Sakurano ,  Takaaki Negoro ,  Yoshinori Ueda ,  Kazuhiro Yoneda ,  Katsuhiko Aisu ,  Yasukazu Nakatani ,  Hirofumi Watanabe

IPC: H01L27/146 ,  H01L29/868 ,  H01L29/866

CPC classification number: H01L29/868 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14643 ,  H01L29/866

Abstract: A solid-state image sensing device is provided including a first semi-conducting layer of first conductivity, a second semi-conducting layer of first conductivity disposed on the first semi-conducting layer, a semiconductor region of second conductivity different from the first conductivity disposed in the second semi-conducting layer, a deep trench configured to isolate a plurality of neighboring pixels from each other, and an electrode implanted into the deep trench, where the semiconductor region of second conductivity, the second semi-conducting layer, and the first semi-conducting layer are disposed in that order from a proximal side to a distal side, the second semi-conducting layer is split by the deep trench into sections that correspond to the pixels, an impurity concentration of first conductivity of the first semi-conducting layer is higher than an impurity concentration of first conductivity of the second semi-conducting layer, and the deep trench contacts the first semi-conducting layer.

Abstract translation: 提供一种固态图像感测装置，包括：第一导电性的第一半导体层，设置在第一半导电层上的第一导电性的第二半导体层，与第一导电性不同的第二导电性半导体区域 在第二半导电层中，深沟槽被配置为将多个相邻像素彼此隔离，以及注入到深沟槽中的电极，其中第二导电层的半导体区域，第二半导体层和第一半导体层 半导体层从近侧到远侧按顺序设置，第二半导体层被深沟槽分成与像素对应的部分，第一半导电层的第一导电性的杂质浓度 层比第二半导体层的第一导电性的杂质浓度高，并且深沟槽接触第一半导体层 制作层。

公开(公告)号：US20150070546A1

公开(公告)日：2015-03-12

申请号：US14463743

申请日：2014-08-20

Applicant: Takaaki Negoro ,  Hirofumi Watanabe ,  Katsuhiko Aisu ,  Kazuhiro Yoneda ,  Katsuyuki Sakurano

Inventor： Takaaki Negoro ,  Hirofumi Watanabe ,  Katsuhiko Aisu ,  Kazuhiro Yoneda ,  Katsuyuki Sakurano

IPC: H04N5/355 ,  H04N5/378 ,  H04N5/3745 ,  H01L27/148 ,  H01L27/146

CPC classification number: H04N5/3559 ,  H01L27/14612 ,  H01L27/14638 ,  H01L27/14681 ,  H01L27/148 ,  H04N5/35509 ,  H04N5/3745 ,  H04N5/37457 ,  H04N5/378 ,  H04N5/772 ,  H04N5/907

Abstract: An imaging device includes at least one pixel having a phototransistor which converts light energy into signal charge and varies an amplification factor relative to the intensity of the received light energy, wherein the signal charge of the phototransistor is read out while receiving the light energy with the phototransistor for each pixel.

Abstract translation: 一种成像装置包括至少一个具有光电晶体管的像素，该光电晶体管将光能转换为信号电荷，并相对于所接收的光能的强度改变放大系数，其中光电晶体管的信号电荷在接收光能时读出， 光电晶体管为每个像素。

公开(公告)号：US20130285023A1

公开(公告)日：2013-10-31

申请号：US13819059

申请日：2010-11-24

Applicant: Keiko Kurata ,  Noriyuki Matsusue ,  Kazuhiro Yoneda

Inventor： Keiko Kurata ,  Noriyuki Matsusue ,  Kazuhiro Yoneda

IPC: H01L51/52 ,  H01L51/56

CPC classification number: H01L51/5203 ,  H01L27/3211 ,  H01L51/5265 ,  H01L51/56 ,  H01L2251/558 ,  H05B33/14

Abstract: To increase light-extraction efficiency and simplify manufacturing process. An organic EL panel includes: first electrode reflecting incident light; second electrode transmitting incident light therethrough; organic light-emitting layer emitting light of corresponding color among RGB colors; first functional layer including charge injection/transport layer and at least one other layer, and disposed between the first electrode and the light-emitting layer; and second functional layer disposed between the second electrode and the light-emitting layer. The first functional layers of the RGB colors are equal in film thickness, the organic light-emitting layers of the RGB colors are equal in optical distance from the first electrode, the second functional layers of the RGB colors are equal in film thickness, the organic light-emitting layers of the RGB colors are equal in optical distance from the second electrode, and the organic light-emitting layers of the RGB colors differ in film thickness.

Abstract translation: 提高光提取效率并简化制造过程。 有机EL面板包括：反射入射光的第一电极; 第二电极透射入射光; 在RGB颜色中发射相应颜色的有机发光层; 第一功能层，包括电荷注入/传输层和至少一个其它层，并且设置在第一电极和发光层之间; 以及设置在第二电极和发光层之间的第二功能层。 RGB颜色的第一功能层的膜厚度相等，RGB颜色的有机发光层与第一电极的光学距离相等，RGB颜色的第二功能层的膜厚度相等，有机 RGB颜色的发光层在与第二电极的光学距离上相等，并且RGB颜色的有机发光层的膜厚度不同。

公开(公告)号：US20130193427A1

公开(公告)日：2013-08-01

申请号：US13819062

申请日：2010-11-24

Applicant: Keiko Kurata ,  Noriyuki Matsusue ,  Kazuhiro Yoneda

Inventor： Keiko Kurata ,  Noriyuki Matsusue ,  Kazuhiro Yoneda

IPC: H01L51/52 ,  H01L51/56

CPC classification number: H01L51/5203 ,  H01L27/3211 ,  H01L27/322 ,  H01L51/5265 ,  H01L51/56 ,  H01L2251/5315 ,  H01L2251/558 ,  H05B33/10

Abstract: To increase light-extraction efficiency and simplify manufacturing process. An organic EL panel includes: first electrode reflecting incident light; second electrode transmitting incident light therethrough; organic light-emitting layer emitting light of corresponding color among R, G, and B colors; first functional layer including charge injection/transport layer and at least one other layer, and disposed between the first electrode and the light-emitting layer; and second functional layer disposed between the second electrode and the light-emitting layer. The charge injection/transport layers of R and G colors are equal in film thickness, and differ in film thickness from the charge injection/transport layer of the B color, the at least one other layers of R, G, and B colors are equal in film thickness, the second functional layers of R, G, and B colors are equal in film thickness, and the light-emitting layers of R, G, and B colors differ in film thickness.

Abstract translation: 提高光提取效率并简化制造过程。 有机EL面板包括：反射入射光的第一电极; 第二电极透射入射光; 在R，G和B颜色中发射相应颜色的光的有机发光层; 第一功能层，包括电荷注入/传输层和至少一个其它层，并且设置在第一电极和发光层之间; 以及设置在第二电极和发光层之间的第二功能层。 R和G颜色的电荷注入/传输层的膜厚度相等，并且膜厚度与B颜色的电荷注入/传输层不同，R，G和B的至少一个其他层的颜色相等 在膜厚度上，R，G和B颜色的第二功能层的膜厚度相等，并且R，G和B颜色的发光层的膜厚度不同。

公开(公告)号：US20120241780A1

公开(公告)日：2012-09-27

申请号：US13488987

申请日：2012-06-05

Applicant: Keiko KURATA ,  Noriyuki MATSUSUE ,  Kazuhiro YONEDA

Inventor： Keiko KURATA ,  Noriyuki MATSUSUE ,  Kazuhiro YONEDA

IPC: H01L51/52 ,  H01L51/56

CPC classification number: H01L27/3211 ,  H05B33/02 ,  H05B33/10

Abstract: An organic EL panel includes reflective electrodes, a transparent electrode, organic light-emitting layers, and functional layers that are each provided between a corresponding one of the reflective electrodes and a corresponding one of the respective organic light-emitting layers. The film thicknesses of the respective functional layers of R, G, and B colors are each 60 nm or less such that a local maximum of light-emitting efficiency for a corresponding color is exhibited, and are substantially equal to each other. The optical distances between the respective organic light-emitting layers of the R, G, and B colors and the respective reflective electrodes are each 100 nm or less, and are substantially equal to each other.

Abstract translation: 有机EL面板包括反射电极，透明电极，有机发光层和功能层，其各自设置在相应的一个反射电极和相应的一个有机发光层之间。 R，G，B各功能层的膜厚分别为60nm以下，使得表现出相应颜色的发光效率的局部最大值，并且基本相同。 R，G，B各自的有机发光层与各反射电极之间的光学距离分别为100nm以下，基本相等。

公开(公告)号：US20120104423A1

公开(公告)日：2012-05-03

申请号：US13287526

申请日：2011-11-02

Applicant: Keiko KURATA ,  Noriyuki MATSUSUE ,  Kazuhiro YONEDA

Inventor： Keiko KURATA ,  Noriyuki MATSUSUE ,  Kazuhiro YONEDA

IPC: H01L51/52 ,  H01L51/56 ,  H01L27/32

CPC classification number: H05B33/28 ,  H01L51/5234 ,  H01L51/5265

Abstract: An organic light-emitting element includes a reflective anode, a first functional layer, an organic light-emitting layer that emits blue light, a second functional layer, a transparent cathode, and a coating layer. An optical thickness of the first functional layer is greater than 0 nm but not greater than 316 nm. A difference in refractive index between the transparent cathode and either a layer adjacent to the transparent cathode within the second functional layer or a layer adjacent to the transparent cathode within the coating layer is from 0.1 to 0.7 inclusive. The transparent cathode has a physical thickness greater than 0 nm but not greater than 70 nm, a refractive index from 2.0 to 2.4 inclusive, and an optical thickness greater than 0 nm but not greater than 168 nm.

Abstract translation: 有机发光元件包括反射性阳极，第一功能层，发出蓝色光的有机发光层，第二功能层，透明阴极和涂层。 第一功能层的光学厚度大于0nm但不大于316nm。 透明阴极与第二功能层内的透明阴极相邻的层或与涂层内的透明阴极相邻的层之间的折射率差为0.1〜0.7。 透明阴极的物理厚度大于0nm但不大于70nm，折射率为2.0至2.4（包括端值），光学厚度大于0nm但不大于168nm。