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    Solid-state image sensing device with electrode implanted into deep trench
    1.
    发明授权
    Solid-state image sensing device with electrode implanted into deep trench 有权
    固态摄像装置，电极植入深沟

    公开(公告)号：US09508871B2

    公开(公告)日：2016-11-29

    申请号：US14847567

    申请日：2015-09-08

    申请人： Katsuyuki Sakurano ,  Takaaki Negoro ,  Yoshinori Ueda ,  Kazuhiro Yoneda ,  Katsuhiko Aisu ,  Yasukazu Nakatani ,  Hirofumi Watanabe

    发明人： Katsuyuki Sakurano ,  Takaaki Negoro ,  Yoshinori Ueda ,  Kazuhiro Yoneda ,  Katsuhiko Aisu ,  Yasukazu Nakatani ,  Hirofumi Watanabe

    IPC分类号： H01L29/86 ,  H01L27/146 ,  H01L29/868 ,  H01L29/866

    CPC分类号： H01L29/868 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14643 ,  H01L29/866

    摘要： A solid-state image sensing device is provided including a first semi-conducting layer of first conductivity, a second semi-conducting layer of first conductivity disposed on the first semi-conducting layer, a semiconductor region of second conductivity different from the first conductivity disposed in the second semi-conducting layer, a deep trench configured to isolate a plurality of neighboring pixels from each other, and an electrode implanted into the deep trench, where the semiconductor region of second conductivity, the second semi-conducting layer, and the first semi-conducting layer are disposed in that order from a proximal side to a distal side, the second semi-conducting layer is split by the deep trench into sections that correspond to the pixels, an impurity concentration of first conductivity of the first semi-conducting layer is higher than an impurity concentration of first conductivity of the second semi-conducting layer, and the deep trench contacts the first semi-conducting layer.

    摘要翻译： 提供一种固态图像感测装置，包括：第一导电性的第一半导体层，设置在第一半导电层上的第一导电性的第二半导体层，与第一导电性不同的第二导电性半导体区域 在第二半导电层中，深沟槽被配置为将多个相邻像素彼此隔离，以及注入到深沟槽中的电极，其中第二导电层的半导体区域，第二半导体层和第一半导体层 半导体层从近侧到远侧按顺序设置，第二半导体层被深沟槽分成与像素对应的部分，第一半导电层的第一导电性的杂质浓度 层比第二半导体层的第一导电性的杂质浓度高，并且深沟槽接触第一半导体层 制作层。

    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
    半导体器件和半导体器件制造方法

    公开(公告)号：US20150171129A1

    公开(公告)日：2015-06-18

    申请号：US14560037

    申请日：2014-12-04

    申请人： Katsuyuki Sakurano ,  Takaaki Negoro ,  Katsuhiko Aisu ,  Kazuhiro Yoneda ,  Yasukazu Nakatani ,  Hirofumi Watanabe

    发明人： Katsuyuki Sakurano ,  Takaaki Negoro ,  Katsuhiko Aisu ,  Kazuhiro Yoneda ,  Yasukazu Nakatani ,  Hirofumi Watanabe

    IPC分类号： H01L27/146 ,  H01L31/113

    CPC分类号： H01L31/1136 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/14643 ,  H01L27/14689

    摘要： A semiconductor device and a method of manufacturing a semiconductor device are disclosed. The method includes forming a trench, in a vertical direction of a semiconductor substrate having a plurality of photoelectric converting elements arranged on the semiconductor device, at positions between the photoelectric converting elements that are next to each other, forming a first conductive-material layer in and above the trench by implanting a first conductive material into the trench after an oxide film is formed on an inner wall of the trench, forming a first conductor by removing the first conductive-material layer excluding a first conductive portion of the first conductive-material layer implanted into the trench, and forming an upper gate electrode above the first conductor, the upper gate electrode configured to be conductive with the first conductor. The semiconductor device includes a semiconductor substrate, an image sensor, a trench, a first conductor, and an upper gate electrode.

    摘要翻译： 公开了半导体器件和制造半导体器件的方法。 该方法包括在彼此相邻的光电转换元件之间的位置处形成在具有布置在半导体器件上的多个光电转换元件的半导体衬底的垂直方向上形成沟槽，形成第一导电材料层 并且在沟槽的内壁上形成氧化膜之后，通过将第一导电材料注入到沟槽中并在沟槽之上形成第一导体，通过除去除第一导电材料的第一导电部分之外的第一导电材料层 层，并且在第一导体上形成上栅电极，上栅电极被配置为与第一导体导电。 半导体器件包括半导体衬底，图像传感器，沟槽，第一导体和上部栅电极。

    Image sensor having a plurality of phototransistors separated by trench-gate structures and method of manufacturing the same
    6.
    发明授权
    Image sensor having a plurality of phototransistors separated by trench-gate structures and method of manufacturing the same 有权
    图像传感器具有通过沟槽栅极结构分离的多个光电晶体管及其制造方法

    公开(公告)号：US09472706B2

    公开(公告)日：2016-10-18

    申请号：US14560037

    申请日：2014-12-04

    申请人： Katsuyuki Sakurano ,  Takaaki Negoro ,  Katsuhiko Aisu ,  Kazuhiro Yoneda ,  Yasukazu Nakatani ,  Hirofumi Watanabe

    发明人： Katsuyuki Sakurano ,  Takaaki Negoro ,  Katsuhiko Aisu ,  Kazuhiro Yoneda ,  Yasukazu Nakatani ,  Hirofumi Watanabe

    IPC分类号： H01L31/113 ,  H01L27/146

    CPC分类号： H01L31/1136 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/14643 ,  H01L27/14689

    摘要： A semiconductor device and a method of manufacturing a semiconductor device are disclosed. The method includes forming a trench, in a vertical direction of a semiconductor substrate having a plurality of photoelectric converting elements arranged on the semiconductor device, at positions between the photoelectric converting elements that are next to each other, forming a first conductive-material layer in and above the trench by implanting a first conductive material into the trench after an oxide film is formed on an inner wall of the trench, forming a first conductor by removing the first conductive-material layer excluding a first conductive portion of the first conductive-material layer implanted into the trench, and forming an upper gate electrode above the first conductor, the upper gate electrode configured to be conductive with the first conductor. The semiconductor device includes a semiconductor substrate, an image sensor, a trench, a first conductor, and an upper gate electrode.

    摘要翻译： 公开了半导体器件和制造半导体器件的方法。 该方法包括在彼此相邻的光电转换元件之间的位置处形成在具有布置在半导体器件上的多个光电转换元件的半导体衬底的垂直方向上形成沟槽，形成第一导电材料层 并且在沟槽的内壁上形成氧化膜之后，通过将第一导电材料注入到沟槽中并在沟槽之上形成第一导体，通过除去除第一导电材料的第一导电部分之外的第一导电材料层 层，并且在第一导体上形成上栅电极，上栅电极被配置为与第一导体导电。 半导体器件包括半导体衬底，图像传感器，沟槽，第一导体和上部栅电极。

    SEMICONDUCTOR DEVICE, IMAGING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE, IMAGING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    半导体器件，成像装置及制造半导体器件的方法

    公开(公告)号：US20160247847A1

    公开(公告)日：2016-08-25

    申请号：US15019451

    申请日：2016-02-09

    申请人： Yoshinori Ueda ,  Kazuhiro Yoneda ,  Katsuhiko Aisu ,  Yasukazu Nakatani ,  Takaaki Negoro ,  Katsuyuki Sakurano ,  Hirofumi Watanabe

    发明人： Yoshinori Ueda ,  Kazuhiro Yoneda ,  Katsuhiko Aisu ,  Yasukazu Nakatani ,  Takaaki Negoro ,  Katsuyuki Sakurano ,  Hirofumi Watanabe

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14683 ,  H01L27/1463 ,  H01L27/14681

    摘要： A semiconductor device includes a semiconductor layer, an electrode embedded from a surface of the semiconductor layer to an inside of the semiconductor layer and insulated by an insulation layer, and a structure in which a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type are formed in this order from the surface of the semiconductor layer along the electrode via the insulation layer. The electrode is arranged at a position where no inversion layer is formed by a voltage supplied to the electrode in at least one of an interface of the first semiconductor region and the second semiconductor region and an interface of the second semiconductor region and the third semiconductor region.

    摘要翻译： 半导体器件包括半导体层，从半导体层的表面到半导体层的内部并被绝缘层绝缘的电极，以及其中第一导电类型的第一半导体区域，第二半导体 第二导电类型的区域和第一导电类型的第三半导体区域从半导体层的沿着电极的表面经由绝缘层依次形成。 在第一半导体区域和第二半导体区域的界面中的至少一个以及第二半导体区域和第三半导体区域的界面中的至少一个中，电极被配置在没有形成反转层的位置， 。

    SOLID-STATE IMAGE SENSING DEVICE
    8.
    发明申请
    SOLID-STATE IMAGE SENSING DEVICE 有权
    固态图像传感装置

    公开(公告)号：US20160126271A1

    公开(公告)日：2016-05-05

    申请号：US14847567

    申请日：2015-09-08

    申请人： Katsuyuki Sakurano ,  Takaaki Negoro ,  Yoshinori Ueda ,  Kazuhiro Yoneda ,  Katsuhiko Aisu ,  Yasukazu Nakatani ,  Hirofumi Watanabe

    发明人： Katsuyuki Sakurano ,  Takaaki Negoro ,  Yoshinori Ueda ,  Kazuhiro Yoneda ,  Katsuhiko Aisu ,  Yasukazu Nakatani ,  Hirofumi Watanabe

    IPC分类号： H01L27/146 ,  H01L29/868 ,  H01L29/866

    CPC分类号： H01L29/868 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14643 ,  H01L29/866

    摘要： A solid-state image sensing device is provided including a first semi-conducting layer of first conductivity, a second semi-conducting layer of first conductivity disposed on the first semi-conducting layer, a semiconductor region of second conductivity different from the first conductivity disposed in the second semi-conducting layer, a deep trench configured to isolate a plurality of neighboring pixels from each other, and an electrode implanted into the deep trench, where the semiconductor region of second conductivity, the second semi-conducting layer, and the first semi-conducting layer are disposed in that order from a proximal side to a distal side, the second semi-conducting layer is split by the deep trench into sections that correspond to the pixels, an impurity concentration of first conductivity of the first semi-conducting layer is higher than an impurity concentration of first conductivity of the second semi-conducting layer, and the deep trench contacts the first semi-conducting layer.

    摘要翻译： 提供一种固态图像感测装置，包括：第一导电性的第一半导体层，设置在第一半导电层上的第一导电性的第二半导体层，与第一导电性不同的第二导电性半导体区域 在第二半导电层中，深沟槽被配置为将多个相邻像素彼此隔离，以及注入到深沟槽中的电极，其中第二导电层的半导体区域，第二半导体层和第一半导体层 半导体层从近侧到远侧按顺序设置，第二半导体层被深沟槽分成与像素对应的部分，第一半导电层的第一导电性的杂质浓度 层比第二半导体层的第一导电性的杂质浓度高，并且深沟槽接触第一半导体层 制作层。