公开(公告)号：US08298305B2

公开(公告)日：2012-10-30

申请号：US12300362

申请日：2007-05-07

申请人： Toshihiko Sumida ,  Masanori Miyake ,  Hidenori Minami ,  Yoshinori Ueda

发明人： Toshihiko Sumida ,  Masanori Miyake ,  Hidenori Minami ,  Yoshinori Ueda

IPC分类号： B01J7/00

CPC分类号： B01D53/047 ,  B01D2256/16 ,  B01D2257/108 ,  C01B3/32 ,  C01B3/323 ,  C01B3/56 ,  C01B2203/0233 ,  C01B2203/0244 ,  C01B2203/043 ,  C01B2203/0495 ,  C01B2203/0822 ,  C01B2203/0827 ,  C01B2203/0872 ,  C01B2203/0888 ,  C01B2203/1041 ,  C01B2203/1064 ,  C01B2203/107 ,  C01B2203/1076 ,  C01B2203/1223 ,  C01B2203/1288 ,  C01B2203/1695 ,  H01M8/0631 ,  H01M8/0662 ,  Y02P20/128 ,  Y10T137/0357

摘要： A hydrogen manufacturing system for performing offgas flow control includes: a vaporizer (1) for heating a material mixture containing a hydrocarbon material; a reforming reactor (2) for generating hydrogen-containing reformed gas by reforming reactions of the material; a PSA separator (5) for repeating a cycle of adsorption and desorption, where in the adsorption PSA separation is performed with an adsorption tower loaded with an adsorbent to adsorb unnecessary components in the reformed gas and extract hydrogen-enriched gas out of the tower, and in the desorption the offgas containing the unnecessary components from the adsorbent and remaining hydrogen is discharged from the tower; and a buffer tank (6) for holding the offgas before supplying to the vaporizer. The offgas flow supply from the tank (6) to the vaporizer is changed continuously over time when the cycle time is changed according to load change on the separator (5).

摘要翻译： 用于进行废气流量控制的氢制造系统包括：用于加热含有烃材料的材料混合物的蒸发器（1） 用于通过所述材料的重整反应产生含氢重整气体的重整反应器（2）; 用于重复吸附和解吸循环的PSA分离器（5），其中在吸附PSA分离中，用装有吸附剂的吸附塔进行吸附，以吸附重整气体中的不必要成分并将富氢气体从塔中提取出来， 并且在解吸中，从吸附剂和剩余的氢气中含有不需要的成分的废气从塔中排出; 以及用于在蒸发器供应之前保持废气的缓冲罐（6）。 当循环时间根据分离器（5）上的负荷变化而变化时，从罐（6）到蒸发器的废气流量随时间不断变化。

公开(公告)号：US20110012170A1

公开(公告)日：2011-01-20

申请号：US12889695

申请日：2010-09-24

申请人： Masaya Ohtsuka ,  Yoshinori Ueda

发明人： Masaya Ohtsuka ,  Yoshinori Ueda

IPC分类号： H01L29/74

CPC分类号： H01L29/7816 ,  H01L27/0629 ,  H01L27/0922 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/66681 ,  H01L29/8611 ,  H02M3/155

摘要： A power supply device is disclosed that is able to satisfy the power requirements of a device in service and has high efficiency.The power supply device includes a first power supply; a voltage step-up unit that steps up an output voltage of the first power supply; a voltage step-down unit that steps down an output voltage of the voltage step-up unit; and a load that is driven to operate by an output voltage of the voltage step-down unit. The voltage step-up unit steps up the output voltage of the first power supply to a lower limit of an operating voltage of the voltage step-down unit.

摘要翻译： 公开了能够满足正在使用的设备的功率要求并具有高效率的电源装置。 电源装置包括第一电源; 升压单元，其升高第一电源的输出电压; 降压单元的输出电压的降压单元; 以及被驱动以通过降压单元的输出电压进行工作的负载。 升压单元将第一电源的输出电压升压到降压单元的工作电压的下限。

公开(公告)号：US20080006875A1

公开(公告)日：2008-01-10

申请号：US11811435

申请日：2007-06-08

申请人： Masaya Ohtsuka ,  Yoshinori Ueda

发明人： Masaya Ohtsuka ,  Yoshinori Ueda

IPC分类号： H01L29/76

CPC分类号： H01L29/7816 ,  H01L27/0629 ,  H01L27/0922 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/66681 ,  H01L29/8611 ,  H02M3/155

摘要： A power supply device is disclosed that is able to satisfy the power requirements of a device in service and has high efficiency. The power supply device includes a first power supply; a voltage step-up unit that steps up an output voltage of the first power supply; a voltage step-down unit that steps down an output voltage of the voltage step-up unit; and a load that is driven to operate by an output voltage of the voltage step-down unit. The voltage step-up unit steps up the output voltage of the first power supply to a lower limit of an operating voltage of the voltage step-down unit.

摘要翻译： 公开了能够满足正在使用的设备的功率要求并具有高效率的电源装置。 电源装置包括第一电源; 升压单元，其升高第一电源的输出电压; 降压单元的输出电压的降压单元; 以及被驱动以通过降压单元的输出电压进行工作的负载。 升压单元将第一电源的输出电压升压到降压单元的工作电压的下限。

公开(公告)号：US07208359B2

公开(公告)日：2007-04-24

申请号：US11134386

申请日：2005-05-23

申请人： Naohiro Ueda ,  Yoshinori Ueda

发明人： Naohiro Ueda ,  Yoshinori Ueda

IPC分类号： H01L21/8234

CPC分类号： H01L21/823857 ,  H01L21/823892 ,  H01L27/0922 ,  H01L27/0928

摘要： A semiconductor device is provided comprising several device components formed in the same substrate, such as a P-substrate having an offset Nch transistor including N-type source and drain each formed in a P-well spatially separated from one another, and the drain surrounded by a low concentration N-type diffusion layer; an offset Pch transistor including P-type source and drain each formed in an N-well spatially separated from one another, and the drain surrounded by a low concentration P-type diffusion layer; a triple well including a deep N-well, and a P-type IP well formed therein; a normal N-well for forming a Pch MOS transistor; and a normal P-well for forming an Nch MOS transistor; in which simultaneously formed are the low concentration N-type diffusion layer, N-well and normal N-well; the P-well and normal P-well; and the low concentration P-type diffusion layer and IP well.

摘要翻译： 提供了一种半导体器件，其包括形成在同一衬底中的若干器件组件，例如具有偏置N沟道晶体管的P衬底，其中N型晶体管包括N型源极和漏极，其各自形成在彼此空间上分离的P阱中，并且漏极包围 通过低浓度N型扩散层; 偏移Pch晶体管，包括P型源极和漏极，各自形成在空间上彼此分离的N阱中，并且由低浓度P型扩散层包围的漏极; 包括深N阱的三阱和在其中形成的P型IP阱; 用于形成Pch MOS晶体管的正常N阱; 以及用于形成Nch MOS晶体管的正常P阱; 其中同时形成低浓度N型扩散层，N阱和正常N阱; P井和正常P井; 和低浓度P型扩散层和IP井。

公开(公告)号：US20050252684A1

公开(公告)日：2005-11-17

申请号：US11113011

申请日：2005-04-25

申请人： Takeyiki Itabashi ,  Haruo Akahoshi ,  Tadashi Iida ,  Yoshinori Ueda ,  Eiji Takai ,  Naoki Nishimura

发明人： Takeyiki Itabashi ,  Haruo Akahoshi ,  Tadashi Iida ,  Yoshinori Ueda ,  Eiji Takai ,  Naoki Nishimura

IPC分类号： H05K3/46 ,  C23C18/16 ,  C23C18/31 ,  C23C18/40 ,  H05K3/18 ,  H05K1/11 ,  B05D3/04 ,  B05D3/10 ,  H01R12/04

CPC分类号： C23C18/1617 ,  C23C18/40 ,  H05K3/187

摘要： A method is provided for removing plating blocking ions, such as anions, in pairs with copper ions and oxidant ions of a copper ion reducing agent from an electroless copper plating solution and keeping a constant salt concentration in the electroless copper plating solution during plating. The electroless copper plating method uses a plating solution containing copper sulfate as copper ion sources, and a copper ion complexing agent as copper ion sources, glyoxylic acid as a copper ion reducing agent, and a pH conditioner. The method is characterized by precipitating and removing sulfuric and oxalic ions in said electroless copper plating solution and keeping an optimum concentration of at least one of sulfuric and oxalic ions in said electroless copper plating solution during plating.

摘要翻译： 提供了一种从电化学镀铜溶液中去除铜离子还原剂的铜离子和氧化剂离子的电镀阻挡离子（例如阴离子）的方法，并且在镀覆期间在化学镀铜溶液中保持恒定的盐浓度。 无电镀铜方法使用含有硫酸铜作为铜离子源的镀液，铜离子源铜离子络合剂，作为铜离子还原剂的乙醛酸和pH调节剂。 该方法的特征在于在所述化学镀铜溶液中析出和除去硫酸和草酸离子，并且在镀覆期间保持所述无电镀铜溶液中的硫酸和草酸离子中的至少一种的最佳浓度。

公开(公告)号：US06831009B2

公开(公告)日：2004-12-14

申请号：US09962249

申请日：2001-09-26

申请人： Takeyuki Itabashi ,  Haruo Akahoshi ,  Eiji Takai ,  Naoki Nishimura ,  Tadashi Iida ,  Yoshinori Ueda

发明人： Takeyuki Itabashi ,  Haruo Akahoshi ,  Eiji Takai ,  Naoki Nishimura ,  Tadashi Iida ,  Yoshinori Ueda

IPC分类号： H01L214763

CPC分类号： C23C18/40 ,  H05K3/421 ,  H05K3/422 ,  H05K3/426 ,  H05K3/429 ,  H05K2201/09518

摘要： A multilayer wiring substrate which is high in connection reliability is provided through process steps of forming more than one opening, such as a via-hole in a dielectric layer laminated on a substrate, and then applying uniform copper plating to a surface portion of the dielectric layer including the opening to thereby form a wiring layer. An electroless copper plating solution with at least one of mandelonitrile and triethyltetramine mixed therein is used to perform the intended electroless copper plating. An alternative process makes use of a electroless copper plating solution with chosen additive agents or “admixtures” containing at least one of mandelonitrile and triethyltetramine plus eriochrome black T along with at least one of 2,2′-bipyridyl, 1,10-phenanthroline, and 2,9-dimethyl-1,10-phenanthroline.

摘要翻译： 通过在层叠在基板上的电介质层中形成多个开口（例如通孔），然后对电介质的表面部分施加均匀的镀铜，通过工艺步骤提供连接可靠性高的多层布线基板 层，从而形成布线层。 使用其中混合有扁桃腈和三乙基四胺中的至少一种的无电镀铜溶液进行预期的无电镀铜。 一种替代方法利用具有选择的添加剂的无电镀铜溶液或含有扁桃腈和三乙基四胺加上色素黑T中的至少一种的“混合物”以及2,2'-联吡啶，1,10-菲咯啉， 和2,9-二甲基-1,10-菲咯啉。

公开(公告)号：US06798278B2

公开(公告)日：2004-09-28

申请号：US10376277

申请日：2003-03-03

申请人： Yoshinori Ueda

发明人： Yoshinori Ueda

IPC分类号： G05F324

CPC分类号： G05F3/24

摘要： A voltage reference generation circuit is disclosed including a voltage reference generating stage and a voltage reference output stage, in which a depletion-mode MOS transistor and an enhancement-mode MOS transistor are connected in series, and the junction formed between these MOS transistors serves as an output terminal for outputting a voltage to be input to the voltage reference output stage. In the output stage, two enhancement-mode MOS transistors having the same channel dopant profile are connected in series between a power source and the ground, the gate of one MOS transistor is connected to the output terminal of the generating stage, the gate and drain of the other MOS transistor are interconnected, and the junction formed between these MOS transistors serves as an output terminal for a voltage reference. In addition, each of the enhancement-mode MOS transistors is provided with a floating gate having a different threshold voltage depending on, the coupling coefficient between the floating gate and a gate, the amount of charge input to the floating gate, the kind of dielectric material included in the gate, or the thickness of a gate oxide layer, which is suitably utilized to supply reference voltages with improved stability to fluctuations in operating temperatures or processing parameters.

摘要翻译： 公开了一种参考电压生成电路，其包括：耗能型MOS晶体管和增强型MOS晶体管串联连接的电压基准产生级和电压基准输出级，并且在这些MOS晶体管之间形成的结为 输出端子，用于输出要输入到电压参考输出级的电压。 在输出级中，具有相同沟道掺杂分布的两个增强型MOS晶体管串联连接在电源和地之间，一个MOS晶体管的栅极连接到发生级的输出端，栅极和漏极 并且这些MOS晶体管之间形成的结用作用于电压基准的输出端子。 此外，增强型MOS晶体管中的每一个都具有取决于浮置栅极和栅极之间的耦合系数，输入到浮动栅极的电荷量，电介质的种类，具有不同阈值电压的浮置栅极 包括在栅极中的材料或栅极氧化物层的厚度，其适合用于为工作温度或处理参数的波动提供改进的稳定性的参考电压。

公开(公告)号：US5031019A

公开(公告)日：1991-07-09

申请号：US199860

申请日：1988-05-27

申请人： Daisuke Kosaka ,  Yoshinori Ueda ,  Tetsuo Hikawa ,  Masami Nishikawa

发明人： Daisuke Kosaka ,  Yoshinori Ueda ,  Tetsuo Hikawa ,  Masami Nishikawa

IPC分类号： H01L21/82 ,  H01L21/8238 ,  H01L21/8247 ,  H01L21/8249 ,  H01L27/06 ,  H01L27/092 ,  H01L27/10 ,  H01L27/115 ,  H01L27/118 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L27/11896

摘要： A method for manufacturing a Bi-CMOS device by preparing both of bipolar and MOS standard cells in a library is provided. A substrate of a first conductivity type is provided and a plurality of buried layers of a second conductivity type are formed on selected locations of the substrate. Then an epitaxial layer of the first conductivity type is formed on the substrate covering the buried layers. Then a plurality of wells of the second conductivity type are formed in the epitaxial layer such that each of the wells extends through the epitaxial layer from the top surface to at least a portion of the corresponding buried layer to thereby define a plurality of electrically isolated islands in the epitaxial layer. Then a bipolar transistor is formed in at least one of the islands with a MOS transistor formed in at least another of the islands.

摘要翻译： 提供了一种通过在库中制备双极和MOS标准单元来制造Bi-CMOS器件的方法。 提供第一导电类型的衬底，并且在衬底的选定位置上形成第二导电类型的多个掩埋层。 然后在覆盖埋层的基板上形成第一导电类型的外延层。 然后在外延层中形成第二导电类型的多个阱，使得每个阱从顶表面延伸穿过外延层至相应掩埋层的至少一部分，从而限定多个电隔离岛 在外延层中。 然后在至少一个岛上形成双极晶体管，其中MOS晶体管形成在至少另一个岛中。

公开(公告)号：US20160195431A1

公开(公告)日：2016-07-07

申请号：US14978172

申请日：2015-12-22

申请人： Katsuhiko Aisu ,  Hirofumi Watanabe ,  Takaaki Negoro ,  Yoshinori Ueda ,  Yasukazu Nakatani ,  Kazuhiro Yoneda ,  Katsuyuki Sakurano

发明人： Katsuhiko Aisu ,  Hirofumi Watanabe ,  Takaaki Negoro ,  Yoshinori Ueda ,  Yasukazu Nakatani ,  Kazuhiro Yoneda ,  Katsuyuki Sakurano

IPC分类号： G01J1/44

CPC分类号： G01J1/44 ,  G01J2001/444 ,  G01J2001/4473 ,  H04N5/361 ,  H04N5/3655 ,  H04N5/378

摘要： A photoelectric conversion device includes a pixel cell including a phototransistor, a reference cell including a reference transistor having a temperature characteristic identical to that of the phototransistor and having a fixed electrical state, an analog-to-digital converter that converts an analog output of the pixel cell into a digital output, a correction amount computation unit that computes a correction amount for the digital output of the analog-to-digital converter based on an output of the reference cell and a reference value, and a correction unit that corrects the digital output of the analog-to-digital converter based on the correction amount.

摘要翻译： 光电转换装置包括具有光电晶体管的像素单元，具有与光电晶体管的温度特性相同的具有固定电气状态的参考晶体管的参考晶体管，转换模拟输出的模数转换器 像素单元转换为数字输出;校正量计算单元，其基于所述参考单元的输出和参考值计算所述模数转换器的数字输出的校正量，以及校正单元， 基于校正量的模数转换器的输出。

公开(公告)号：US07842967B2

公开(公告)日：2010-11-30

申请号：US11811435

申请日：2007-06-08

申请人： Masaya Ohtsuka ,  Yoshinori Ueda

发明人： Masaya Ohtsuka ,  Yoshinori Ueda

IPC分类号： H01L29/66

CPC分类号： H01L29/7816 ,  H01L27/0629 ,  H01L27/0922 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/66681 ,  H01L29/8611 ,  H02M3/155

摘要： A power supply device is disclosed that is able to satisfy the power requirements of a device in service and has high efficiency.The power supply device includes a first power supply; a voltage step-up unit that steps up an output voltage of the first power supply; a voltage step-down unit that steps down an output voltage of the voltage step-up unit; and a load that is driven to operate by an output voltage of the voltage step-down unit. The voltage step-up unit steps up the output voltage of the first power supply to a lower limit of an operating voltage of the voltage step-down unit.

摘要翻译： 公开了能够满足正在使用的设备的功率要求并具有高效率的电源装置。 电源装置包括第一电源; 升压单元，其升高第一电源的输出电压; 降压单元的输出电压的降压单元; 以及被驱动以通过降压单元的输出电压进行工作的负载。 升压单元将第一电源的输出电压升压到降压单元的工作电压的下限。