METHOD AND APPARATUS FOR REDUCING POWER CONSUMPTION IN MOBILE TERMINAL
    32.
    发明申请
    METHOD AND APPARATUS FOR REDUCING POWER CONSUMPTION IN MOBILE TERMINAL 有权
    用于减少移动终端消耗电力的方法和装置

    公开(公告)号:US20100271176A1

    公开(公告)日:2010-10-28

    申请号:US12765960

    申请日:2010-04-23

    CPC classification number: H04W52/0229 Y02D70/00

    Abstract: An apparatus and a method for reducing battery consumption of a mobile terminal are provided. More particularly, an apparatus and a method for reducing battery consumption by allowing a mobile terminal to perform a wakeup process by expiration or update of a timer which coincides with a paging period in order to reduce battery consumption. The controller reduces a frequency of waking up from a sleep mode by matching a wakeup time set by a timer to a paging period with a certain condition is met.

    Abstract translation: 提供了一种用于减少移动终端的电池消耗的装置和方法。 更具体地,涉及一种用于通过允许移动终端通过到达或更新定时器来执行唤醒处理以减少电池消耗的装置和方法,该定时器与寻呼周期一致以减少电池消耗。 控制器通过将由定时器设置的唤醒时间与满足特定条件的寻呼周期相匹配来降低从睡眠模式唤醒的频率。

    High-power, broad-band, superluminescent diode and method of fabricating the same
    33.
    发明授权
    High-power, broad-band, superluminescent diode and method of fabricating the same 有权
    大功率,宽带,超发光二极管及其制造方法

    公开(公告)号:US07745836B2

    公开(公告)日:2010-06-29

    申请号:US12118543

    申请日:2008-05-09

    CPC classification number: H01L33/0045 H01L33/02

    Abstract: Provided are a superluminescent diode with a high optical power and a broad wavelength band, and a method of fabricating the same. The superluminescent diode includes: at least one high optical confinement factor (HOCF) region; and at least one low optical confinement factor (LOCF) region having a lower optical confinement factor than the HOCF region. The method includes obtaining a difference of optical confinement factors in the HOCF region and the LOCF region through a selective area growth method, the selective area growth method using a deposition thicknesses difference of thin layers according to a width difference of openings that expose a substrate.

    Abstract translation: 提供了具有高光功率和宽波长带的超发光二极管及其制造方法。 超发光二极管包括:至少一个高光限制因子(HOCF)区域; 以及具有比HOCF区域更低的光限制因子的至少一个低光限制因子(LOCF)区域。 该方法包括通过选择性区域生长方法获得HOCF区域和LOCF区域中的光限制因子的差异,所述选择性区域生长方法使用根据暴露衬底的开口的宽度差的薄层的沉积厚度差。

    WAVELENGTH-TUNABLE EXTERNAL CAVITY LASER
    34.
    发明申请
    WAVELENGTH-TUNABLE EXTERNAL CAVITY LASER 审中-公开
    波长可调外部空间激光

    公开(公告)号:US20100074282A1

    公开(公告)日:2010-03-25

    申请号:US12501916

    申请日:2009-07-13

    Abstract: Provided is a tunable external cavity laser. The tunable external cavity laser includes that a bragg grating hermetically packaged in a TO can, a superluminescent diode (SLD) using an optical source signal and an optical fiber. A lasing wavelength is decided when the optical source signal emitted from the SLD is reflected by the bragg grating and the lasing wavelength is output to the optical fiber through the SLD.

    Abstract translation: 提供了可调谐的外腔激光器。 可调谐外腔激光器包括用TO形成气密封装的布拉格光栅,使用光源信号的超发光二极管(SLD)和光纤。 当从SLD发射的光源信号被布拉格光栅反射并且通过SLD将激光波长输出到光纤时,确定激光波长。

    Distributed Bragg reflector (DBR) structure in vertical cavity surface emitting laser (VCSEL) diode, method of manufacturing the same, and VCSEL diode
    36.
    发明授权
    Distributed Bragg reflector (DBR) structure in vertical cavity surface emitting laser (VCSEL) diode, method of manufacturing the same, and VCSEL diode 有权
    垂直腔表面发射激光器(VCSEL)二极管中的分布式布拉格反射器(DBR)结构及其制造方法以及VCSEL二极管

    公开(公告)号:US07369595B2

    公开(公告)日:2008-05-06

    申请号:US11544832

    申请日:2006-10-05

    CPC classification number: H01S5/183 B82Y20/00 H01S5/34306

    Abstract: A DBR structure in a VCSEL diode, a method of manufacturing the DBR structure, and a VCSEL diode are provided. The DBR structure in the VCSEL diode includes: an InAlGaAs layer having a predetermined refractive index and disposed on an InP substrate; a first InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InAlGaAs layer; an InP layer having a lower refractive index than the InAlGaAs layer and disposed on the first InAlAs layer; and a second InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InP layer. Thus, the DBR structure can reduce optical loss due to type-II band line-up at a junction between the InAlGaAs layer and the InP layer, and thus improve device characteristics.

    Abstract translation: 提供VCSEL二极管中的DBR结构,制造DBR结构的方法和VCSEL二极管。 VCSEL二极管中的DBR结构包括:具有预定折射率并设置在InP衬底上的InAlGaAs层; 第一InAlAs层,其折射率低于InAlGaAs层并且设置在InAlGaAs层上; InP层,其折射率低于InAlGaAs层并且设置在第一InAlAs层上; 和具有比InAlGaAs层低的折射率的第二InAlAs层并且设置在InP层上。 因此,DBR结构可以减少在InAlGaAs层和InP层之间的结上的II型带阵列引起的光损耗,从而提高器件特性。

    Apparatus and method for acquiring synchronization in mobile communication system
    37.
    发明申请
    Apparatus and method for acquiring synchronization in mobile communication system 审中-公开
    用于在移动通信系统中获取同步的装置和方法

    公开(公告)号:US20080013659A1

    公开(公告)日:2008-01-17

    申请号:US11801564

    申请日:2007-05-10

    Applicant: Ki-Soo Kim

    Inventor: Ki-Soo Kim

    CPC classification number: H04J3/0682

    Abstract: An apparatus and method for simultaneously executing the same event in a plurality of mobile terminals are provided. The method includes transmitting a signal to the mobile terminals and checking a transmission time point of the signal; when a response signal for the signal is received, checking a reception time point of the response signal; calculating a signal delay time using the transmission time point of the predetermined signal, the reception time point of the response signal, and an offset time contained in the response signal; and transmitting an event execution signal to the mobile terminals and executing a corresponding event, considering the offset time and the signal delay time.

    Abstract translation: 提供了一种用于在多个移动终端中同时执行相同事件的装置和方法。 该方法包括向移动终端发送信号并检查信号的传输时间点; 当接收到信号的响应信号时,检查响应信号的接收时间点; 使用预定信号的传输时间点,响应信号的接收时间点和包含在响应信号中的偏移时间来计算信号延迟时间; 并且考虑到偏移时间和信号延迟时间,向移动终端发送事件执行信号并执行相应的事件。

    Positive photoresist layer and a method for using the same
    40.
    发明授权
    Positive photoresist layer and a method for using the same 有权
    正性光致抗蚀剂层及其使用方法

    公开(公告)号:US06338930B1

    公开(公告)日:2002-01-15

    申请号:US09654927

    申请日:2000-09-05

    CPC classification number: G03F7/0048 G03F7/0226 G03F7/162

    Abstract: A method for preparing a positive photoresist layer is provided. In this method, a photoresist composition is drop-wise applied on an insulator layer or a conductive metal layer formed on a substrate. The photoresist composition includes a polymer resin, a sensitizer for changing solubility of the photoresist layer when exposed and a solvent. The coated substrate is rotated at the speed of 1,250 to 1,350 rpm for 4.2 to 4.8 seconds. The coated substrate is then dried and the dried substrate is exposed to some form of radiation. Next, the exposed portion is removed by using an alkaline developing solution. The solvent preferably includes 3-methoxybutyl acetate and 4-butyrolactone, or includes 3-methoxybutyl acetate, 2-heptanone, and 4-butyrolactone.

    Abstract translation: 提供了制备正性光致抗蚀剂层的方法。 在该方法中,将光致抗蚀剂组合物逐滴施加在形成在基板上的绝缘体层或导电金属层上。 光致抗蚀剂组合物包括聚合物树脂,当曝光时改变光致抗蚀剂层的溶解度的敏化剂和溶剂。 涂布的基材以1,250至1350rpm的速度旋转4.2至4.8秒。 然后将涂覆的基材干燥并将干燥的基材暴露于某种形式的辐射。 接下来,通过使用碱性显影液去除曝光部分。 溶剂优选包括3-甲氧基丁酸乙酯和4-丁内酯,或包括3-甲氧基丁酸乙酯,2-庚酮和4-丁内酯。

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