公开(公告)号：US6062963A

公开(公告)日：2000-05-16

申请号：US59750

申请日：1998-04-14

Applicant: Juen-Kuen Lin ,  Chien-Hsin Lai ,  Peng-Yih Peng ,  Hao-Kuang Chiu ,  Kun-Lin Wu

Inventor： Juen-Kuen Lin ,  Chien-Hsin Lai ,  Peng-Yih Peng ,  Hao-Kuang Chiu ,  Kun-Lin Wu

IPC: B24B37/04 ,  B24B57/02 ,  B24B5/00 ,  B24B47/02

CPC classification number: B24B37/32 ,  B24B37/042 ,  B24B57/02

Abstract: A chemical-mechanical polishing machine having an improved wafer retainer ring design for the polishing head, comprising a polishing table, a polishing pad, a polishing head and a wafer retainer ring, wherein the polishing pad is above the polishing table, the polishing head is above the polishing pad, and the wafer retainer ring is mounted onto the polishing head. Improvement of the retainer ring design includes the formation of a plurality of guiding holes around the periphery of the retainer ring such that the guiding hole axis follows the centrifugal line produced by a rotating polishing head. Furthermore, the guiding hole has a gradual diffusing structure from the outer inlet to the inner outlet.

Abstract translation: 一种具有用于抛光头的改进的晶片保持环设计的化学机械抛光机，包括抛光台，抛光垫，抛光头和晶片保持环，其中抛光垫在抛光台之上，抛光头是 在抛光垫上方，并且晶片保持环安装在抛光头上。 保持环设计的改进包括围绕保持环的周边形成多个引导孔，使得引导孔轴线遵循由旋转抛光头产生的离心线。 此外，引导孔具有从外部入口到内部出口的逐渐扩散结构。

公开(公告)号：US6030892A

公开(公告)日：2000-02-29

申请号：US866131

申请日：1997-05-30

Applicant: Kun-Lin Wu ,  Hao-Kuang Chiu ,  Horng-Bor Lu ,  Jenn-Tarng Lin

Inventor： Kun-Lin Wu ,  Hao-Kuang Chiu ,  Horng-Bor Lu ,  Jenn-Tarng Lin

IPC: H01L21/3105 ,  H01L21/4763

CPC classification number: H01L21/31053

Abstract: A method of preventing overpolishing in a chemical-mechanical polishing operation includes using a spin-on polymer material instead of spin-on glass as the local planarization material. The spin-on polymer layer is further used as a polishing stop layer so as to prevent damage to components due to overpolishing, because the polishing rate of the spin-on polymer layer in a chemical-mechanical polishing operation is, in general, lower than the polishing rate of the silicon dioxide layer formed using plasma enhanced chemical vapor deposition.

Abstract translation: 在化学机械抛光操作中防止过度抛光的方法包括使用旋涂聚合物材料代替旋涂玻璃作为局部平坦化材料。 旋涂聚合物层进一步用作抛光停止层，以防止由于过度抛光而损坏组分，因为化学机械抛光操作中的旋涂聚合物层的抛光速率通常低于 使用等离子体增强化学气相沉积形成的二氧化硅层的抛光速率。

公开(公告)号：US06013559A

公开(公告)日：2000-01-11

申请号：US172465

申请日：1998-10-14

Applicant: Kun-Lin Wu ,  Horng-Bor Lu

Inventor： Kun-Lin Wu ,  Horng-Bor Lu

IPC: H01L21/762 ,  H01L21/76

CPC classification number: H01L21/76224 ,  Y10S148/05

Abstract: A method of fabricating a trench isolation structure in a semiconductor devices. First, a mask layer is formed on a substrate and patterned. Then, a trench is formed in the substrate using the mask layer as a mask. An insulating layer is formed under the mask layer to fill the trench. The insulating layer is polished to expose a portion of the mask layer and an insulating plug is left in the trench. A RTP is performed to avoid mobile ions diffuse into the substrate. There are several operating conditions for the RTP. For example the operating temperature is ranged from about 600.degree. C. to about 1300.degree. C. The duration for performing the RTP is ranged from about 5 seconds to about 5 minutes. The operating gas can be selected from one of a group of N.sub.2, O.sub.2, or N.sub.2 O. Besides, before the RTP a cleaning step is performed using SC-1 or hydrogen fluoride (HF) solution as cleaning solution.

Abstract translation: 一种在半导体器件中制造沟槽隔离结构的方法。 首先，在基板上形成掩模层并进行图案化。 然后，使用掩模层作为掩模在衬底中形成沟槽。 在掩模层之下形成绝缘层以填充沟槽。 抛光绝缘层以露出掩模层的一部分，并且绝缘插头留在沟槽中。 执行RTP以避免移动离子扩散到衬底中。 RTP有几种操作条件。 例如，操作温度范围为约600℃至约1300℃。执行RTP的持续时间为约5秒至约5分钟。 工作气体可以选自一组N2，O2或N2O中的一种。 此外，在RTP之前，使用SC-1或氟化氢（HF）溶液作为清洁溶液进行清洁步骤。