Abstract:
Provided are an EMF model synchronization method and system. The system calculates a weight based on a hierarchy for an object identifier in a changed model, when the change of the model occurs in an EMF model which has an XML element path as an attribute. The system accumulates the calculated weight to a sum of weights. When the sum of weights becomes greater than the threshold value, the system simultaneously updates all models which are changed until the sum of weights becomes greater than the threshold value, thereby synchronizing change contents. As a hierarchy of an identifier changed on an XML path becomes higher, the weight is determined to have a larger value.
Abstract:
Apparatus and methods are disclosed, such as those involving a flash memory device. One such apparatus includes a memory block including a plurality of columns. Each of the columns includes a bit line and a plurality of memory cells on the bit line. The plurality of columns include a plurality of groups of regular columns and a plurality of groups of redundant columns. The apparatus also includes a plurality of data latches. Each of the data latches is configured to store data read from a respective one group of regular columns. The apparatus further includes a plurality of redundant data latches. Each of the redundant data latches is configured to store data read from a respective one group of redundant columns. The apparatus also includes a multiplexer configured to selectively output data from the plurality of data latches and the plurality of redundant data latches.
Abstract:
A non-volatile memory array with both single level cells and multilevel cells. The single level and multilevel cells, in one embodiment, are alternated either along each bit line. An alternate embodiment alternates the single and multilevel cells along both the bit lines and the word lines so that no single level cell is adjacent to another single level cell in either the word line or the bit line directions.
Abstract:
The apparatus and systems described herein may comprise a plurality of memory cells coupled to a local wordline, and a wordline drive circuit that includes a regulator coupled to a plurality of pass transistors and a string driver. The regulator may comprise a regulator transistor having a threshold voltage that is substantially the same as the threshold voltage of the string driver during memory cell program operations. In some embodiments, the regulator may comprise a cascode-connected pair of transistors. Methods of manufacturing and operating the apparatus and systems are also described.
Abstract:
The present disclosure includes methods, devices, modules, and systems for operating memory cells. One method embodiment includes applying sensing voltages to selected access lines for sensing selected memory cells. The method also includes applying a dynamic pass voltage to unselected access lines while the sensing voltages are applied.
Abstract:
Provided is a distributed and asynchronous implicit token carrier sense multiple access/collision avoidance (CSMA/CA) protocol guaranteeing quality of service for both real time and non-real time traffic. The implicit token CSMA/CA protocol allocates a band in an entire bandwidth to voice traffic and allows the remaining bands to be used for data traffic. The implicit token CSMA/CA protocol includes applying a token passing protocol to transmit voice traffic in real time by having a band in an entire bandwidth allocated using a predetermined data frame and applying a CSMA/CA mechanism to transmit data traffic in non-real time by employing remaining bands not allocated to the voice traffic using another predetermined data frame.
Abstract:
The apparatus and systems comprise a plurality of memory cells coupled to a local wordline, and a wordline drive circuit that includes a regulator coupled to a plurality of pass transistors and a string driver. The regulator may comprise a regulator transistor having a threshold voltage that is substantially the same as the threshold voltage of the string driver during memory cell program operations. The regulator may comprise a cascode-connected pair of transistors. Methods of manufacturing and operating the apparatus and systems are also described.
Abstract:
The invention provides methods and apparatus. A NAND flash memory device receives command and address signals at a first frequency and a data signal at a second frequency that is greater than the first frequency.
Abstract:
A method, apparatus and system providing a memory device having an array of cells which may be selectively designated for either error correction code use or redundancy cell use.
Abstract:
A direct current (DC) power supply for varying an output voltage according to a load current variation is disclosed. The DC power supply includes an alternating current(AC)/DC conversion unit converting commercial AC power into DC power, a DC/DC conversion unit converting a voltage level of the DC power and outputting output power, and a control unit controlling conversion of the voltage level of the fed-back DC power according to a variation in a load current of the output power from the DC/DC conversion unit.