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31.发明授权Controlling method of forming thin film, system for said controlling method, exposure method and system for said exposure method 失效成膜薄膜的控制方法，所述控制方法的系统，所述曝光方法的曝光方法和系统
公开(公告)号：US5747201A
公开(公告)日：1998-05-05
申请号：US392196
申请日：1995-02-22
CPC分类号： G03F7/70608 , G03F7/20 , G03F7/70566 , G03F7/70583
摘要： A method for irradiating a substrate such as a semiconductor substrate, coated with a photoresist, with light to measure variations in optical properties such as reflectivity, refractive index, transmittance, polarization, spectral transmittance, for determining an optimum photoresist coating condition, an optimum photoresist baking condition, an optimum developing condition or an optimum exposure energy quantity, and forming a photoresist pattern according to the optimum condition. A system for the exposure method, a controlling method of forming a photoresist film by use of the exposure method, and a system for the controlling method, are useful for stabilization of the formation or treatment of the photoresist film, and ensure less variations in the pattern size. Furthermore, even in the case of a thin film other than a photoresist film, the formation or treatment of the thin film can be stabilized by measuring the optical property before and during or after the formation of the thin film and using the measurement results to control the condition for forming the thin film, the etching condition or the coating condition.
摘要翻译： 用于用光照射涂覆有光致抗蚀剂的半导体衬底的衬底以测量诸如反射率，折射率，透射率，极化，光谱透射率之类的光学性质的变化的方法，用于确定最佳光刻胶涂覆条件，最佳光刻胶 烘烤条件，最佳显影条件或最佳曝光能量，以及根据最佳条件形成光致抗蚀剂图案。 用于曝光方法的系统，通过曝光方法形成光致抗蚀剂膜的控制方法和用于控制方法的系统可用于稳定光致抗蚀剂膜的形成或处理，并且确保较少的变化 图案大小。 此外，即使在除了光致抗蚀剂膜之外的薄膜的情况下，也可以通过测量薄膜形成之前和之中或之后的光学特性来稳定薄膜的形成或处理，并且使用测量结果来控制 形成薄膜的条件，蚀刻条件或涂布条件。
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32.发明授权Controlling method of forming thin film, system for said controlling method, exposure method and system for said exposure method 失效成膜薄膜的控制方法，所述控制方法的系统，所述曝光方法的曝光方法和系统
公开(公告)号：US5409538A
公开(公告)日：1995-04-25
申请号：US77896
申请日：1993-06-16
CPC分类号： G03F7/70608 , G03F7/20 , G03F7/70566 , G03F7/70583
摘要： A method for irradiating a substrate such as a semiconductor substrate, coated with a photoresist, with light to measure variations in optical properties, such as reflectivity, refractive index, transmittance, polarization, spectral transmittance, for determining an optimum photoresist coating condition, an optimum photoresist baking condition, an optimum developing condition or an optimum exposure energy quantity, and forming a photoresist pattern according to the optimum condition. A system for the exposure method, a controlling method of forming a photoresist film by use of the exposure method, and a system for the controlling method, are useful for stabilization of the formation or treatment of the photoresist film, and ensure less variations in the pattern size. Furthermore, even in the case of a thin film other than a photoresist film, the formation or treatment of the thin film can be stabilized by measuring the optical property before and during or after the formation of the thin film and using the measurement results to control the condition for forming the thin film, the etching condition or the coating condition.
摘要翻译： 一种用于用光照射涂覆有光致抗蚀剂的半导体衬底的衬底以测量用于确定最佳光刻胶涂覆条件的光学性质（例如反射率，折射率，透射率，极化，光谱透射率）的变化的方法， 光刻胶烘烤条件，最佳显影条件或最佳曝光能量，以及根据最佳条件形成光致抗蚀剂图案。 用于曝光方法的系统，通过曝光方法形成光致抗蚀剂膜的控制方法和用于控制方法的系统可用于稳定光致抗蚀剂膜的形成或处理，并且确保较少的变化 图案大小。 此外，即使在除了光致抗蚀剂膜之外的薄膜的情况下，也可以通过测量薄膜形成之前和之中或之后的光学特性来稳定薄膜的形成或处理，并且使用测量结果来控制 形成薄膜的条件，蚀刻条件或涂布条件。
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公开(公告)号：US5329333A
公开(公告)日：1994-07-12
申请号：US846158
申请日：1992-03-05
申请人： Minori Noguchi , Yukio Kenbo , Yoshitada Oshida , Masataka Shiba , Yasuhiro Yoshitaka , Makoto Murayama
发明人： Minori Noguchi , Yukio Kenbo , Yoshitada Oshida , Masataka Shiba , Yasuhiro Yoshitaka , Makoto Murayama
CPC分类号： G03F7/705 , G03F7/2002 , G03F7/701 , G03F7/70125 , G03F7/70308 , G03F7/70591 , Y10S430/146
摘要： An exposure apparatus and method wherein a mask is illuminated with light and light one of transmitted through and reflected from the illuminated mask is imaged onto a substrate. At least during imaging, transmission of light one of transmitted and reflected from the illuminated mask is partially inhibited. More particularly, a spatial filter is utilized for inhibiting at least a portion of O-order diffraction light.
摘要翻译： 一种曝光装置和方法，其中用光和光照射掩模，将透射通过和从照射的掩模反射的透镜装置成像到基板上。 至少在成像期间，部分地抑制从被照射的掩模发射和反射的光的透射。 更具体地，利用空间滤波器来抑制O级衍射光的至少一部分。
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34.发明授权
公开(公告)号：US5191624A
公开(公告)日：1993-03-02
申请号：US762935
申请日：1991-09-19
申请人： Kenchi Ito , Kazumi Kawamoto , Naoya Kanda , Yasuo Hira , Hidemi Sato , Atsuko Fukushima , Masataka Shiba , Akira Inagaki , Minoru Yoshida
发明人： Kenchi Ito , Kazumi Kawamoto , Naoya Kanda , Yasuo Hira , Hidemi Sato , Atsuko Fukushima , Masataka Shiba , Akira Inagaki , Minoru Yoshida
CPC分类号： G02B6/12004 , G02F1/335 , G11B7/1245
摘要： An optical waveguide is comprised of an optical substrate and an optical thin-film optical waveguide layer and formed such that ##EQU1## where .theta. is an output angle, n.sub.o1 is an ordinary refractive index of the optical substrate for an ordinary beam, n.sub.e1 is an extraordinary refractive index of the optical substrate for an extraordinary beam, n.sub.o2 is an ordinary refractive index of the optical thin-film optical waveguide layer for the ordinary beam and n.sub.e2 is an extraordinary refractive index of the optical thin-film optical waveguide layer for the extraordinary beam, and an electrode for generating a surface acoustic wave for diffracting light is formed on the optical waveguide to construct a collinear optical deflector. A method for production of the optical thin-film optical waveguide layer is exemplified wherein a target made of tantalic lilthium niobate or tantalic lithium niobate magnesium and an optical substrate made of lithium tantalate are prepared and an optical thin-film optical waveguide layer having a composition of tantalic lithium niobate or tantalic lithium niobate magnesium is formed on the optical substrate through an ion beam sputtering process into which oxygen can be introduced. Proton substitutes for part of an element constituting the optical thin-film optical waveguide layer.
摘要翻译： 光波导包括光学基板和光学薄膜光波导层，并且被形成为使得θ是输出角度的θIMA1是普通光束的光学基板的普通折射率，ne1是 用于非常光束的光学基板的非常折射率，no2是普通光束的光学薄膜光波导层的普通折射率，ne2是非常优异的光学薄膜光波导层的非常折射率 并且在光波导上形成用于产生用于衍射光的表面声波的电极，以构成共线的光学偏转器。 制备光学薄膜光波导层的方法被制备，其中制备由钽酸铌酸锂或钽酸铌镁制成的靶和由钽酸锂制成的光学衬底，并且制备具有组成的光学薄膜光波导层 通过可以引入氧气的离子束溅射工艺在光学基板上形成铌酸锂或钽酸铌酸镁。 质子代替构成光学薄膜光波导层的元件的一部分。
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公开(公告)号：US5008702A
公开(公告)日：1991-04-16
申请号：US401619
申请日：1989-08-31
IPC分类号： G03F7/20 , H01L21/027 , H01L21/30
CPC分类号： G03F7/70216 , G03F7/2002 , G03F7/70241 , G03F7/70783 , G03F7/70791
摘要： An enlargement projection type exposure method includes the steps of deforming the shape of a substrate so as to eliminate distortion in an enlarged image of the pattern, which is formed on a mask and projected onto the substrate through an enlargement projection system. The pattern is exposed with the use of an enlargement projection optical system. An apparatus for the method comprises an enlargement projection optical system for enlarging the pattern formed on the mask, and a substrate deforming device for deforming by adsorption the substrate in shape so as to eliminate the distortion in the enlarged image of the pattern through the enlargement projection optical system.
摘要翻译： 放大投影型曝光方法包括以下步骤：使基板的形状变形，以消除形成在掩模上并通过放大投影系统投影到基板上的图案的放大图像的变形。 使用放大投影光学系统曝光图案。 一种用于该方法的装置，包括用于扩大形成在掩模上的图案的放大投影光学系统和用于通过吸收基板而变形的基板变形装置，以便通过放大投影来消除图案的放大图像中的变形 光学系统。
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公开(公告)号：US06335146B1
公开(公告)日：2002-01-01
申请号：US09542071
申请日：2000-04-03
申请人： Minori Noguchi , Yukio Kenbo , Yoshitada Oshida , Masataka Shiba , Yasuhiro Yoshitaka , Makoto Murayama
发明人： Minori Noguchi , Yukio Kenbo , Yoshitada Oshida , Masataka Shiba , Yasuhiro Yoshitaka , Makoto Murayama
IPC分类号： G03F700
CPC分类号： G03F7/705 , G03F7/2002 , G03F7/701 , G03F7/70125 , G03F7/70308 , G03F7/70591 , Y10S430/146
摘要： A production method of a semiconductor device, includes the steps of emitting an excimer laser from a light source, forming the excimer laser in a particular shape, illuminating a pattern on a mask for a phase shifter method with the particular shaped excimer laser, and exposing a resist on a wafer with the excimer laser which passed through the mask. The resist on the wafer is developed and the wafer is etched to form a pattern.
摘要翻译： 半导体器件的制造方法包括以下步骤：从光源发射准分子激光，形成特定形状的准分子激光器，照射具有特定形状的准分子激光器的移相器方法的掩模上的图案，以及曝光 具有通过掩模的准分子激光器的晶片上的抗蚀剂。 显影晶片上的抗蚀剂，蚀刻晶片以形成图案。
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公开(公告)号：US5195070A
公开(公告)日：1993-03-16
申请号：US551794
申请日：1990-07-12
申请人： Masataka Shiba , Kazumi Kawamoto , Yasuo Hira , Akira Inagaki , Hidemi Sato , Kenchi Ito , Atsuko Fukushima , Ryuichi Funatsu
发明人： Masataka Shiba , Kazumi Kawamoto , Yasuo Hira , Akira Inagaki , Hidemi Sato , Kenchi Ito , Atsuko Fukushima , Ryuichi Funatsu
CPC分类号： G11B7/131 , G11B7/0903 , G11B7/1245 , G11B7/127 , G11B7/14
摘要： Using an optical pickup, recording/reproducing of information is performed by irradiating light beams to an optical recording medium to form light spots. The optical pickup includes means for generating plural light beams, an optical waveguide for guiding the plural light beams in a row into a flat space, and a light deflecting element for deflecting the light beams, which run in the optical waveguide, within a plane formed by a vector perpendicular to a plane of the optical waveguide and a directional vector of the light beams. The light deflecting element deflects the plural light spots, which are to be arranged in a row, in a direction perpendicular to the light spot row to perform micro seek.
摘要翻译： 使用光学拾取器，通过将光束照射到光学记录介质以形成光斑来进行信息的记录/再现。 光拾取器包括用于产生多个光束的装置，用于将多个光束一行地引导到平坦空间中的光波导和用于使在光波导中延伸的光束偏转在形成的平面内的光偏转元件 通过垂直于光波导的平面的矢量和光束的方向矢量。 光偏转元件在垂直于光点行的方向上偏转排列成一列的多个光点，以执行微寻迹。
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公开(公告)号：US5070488A
公开(公告)日：1991-12-03
申请号：US372639
申请日：1989-06-28
申请人： Atsuko Fukushima , Yasuo Hira , Hidemi Sato , Kazumi Kawamoto , Kenchi Ito , Masataka Shiba , Akira Arimoto
发明人： Atsuko Fukushima , Yasuo Hira , Hidemi Sato , Kazumi Kawamoto , Kenchi Ito , Masataka Shiba , Akira Arimoto
CPC分类号： G02B6/4246 , G02B6/124 , G02B6/34 , G02B6/42 , G02F1/335 , G11B7/1245 , G11B7/125 , G11B7/1384
摘要： An optical integrated circuit and an optical apparatus used in optical communication or an opto-electronics apparatus such as an optical disk recording apparatus, in which various kinds of aberration caused by wavelength variation of a light source when a semiconductor laser is used as the light source. An aberration correcting grating having such grating pitches as to nearly satisfy the Bragg condition preferably with respect to a certain wavelength of the semiconductor laser beam is used. As a result, lowering of incidence (entrance) and radiation (exit) coupling efficiencies of the grating coupler and aberration such as chromatic aberration can be prevented. Even if a multi-mode semiconductor laser is used as a light source, the characteristics of the optical integrated circuit and optical apparatus do not vary largely.
摘要翻译： 在光通信中使用的光集成电路和光学装置或光电记录装置等光电装置，其中当使用半导体激光器作为光源时，由光源的波长变化引起的各种像差 。 使用具有这样的光栅间距几乎满足布拉格条件的像差校正光栅，优选地相对于半导体激光束的特定波长。 结果，可以防止光栅耦合器的入射（入射）和辐射（出射）耦合效率的降低以及像差等像差。 即使使用多模式半导体激光器作为光源，光集成电路和光学装置的特性也不会很大变化。
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公开(公告)号：US4906852A
公开(公告)日：1990-03-06
申请号：US305006
申请日：1989-01-31
申请人： Toshihiko Nakata , Masataka Shiba
发明人： Toshihiko Nakata , Masataka Shiba
IPC分类号： G03F9/00 , H01L21/027 , H01L21/30 , H01L21/68
CPC分类号： G03F9/7076
摘要： A projection alignment method of aligning a mask and a wafer with each other through an optical imaging system and an apparatus for performing the method are disclosed. The apparatus comprises an optical illumination system for illuminating with highly coherent illumination light an alignment pattern formed with a stepped pattern on the wafer and a flat or planar portion of the wafer in the vicinity of the alignment pattern, an optical interference system for making reflected light from the alignment pattern on the wafer and reflected light from the flat portion of the wafer illuminated by the optical illumination system interfere with each other while optically superimposing optical images of both the reflected lights obtained through the optical imaging system on each other. A photo-electric conversion element subjects an interference pattern obtained by the optical interference system to photo-electric conversion, thereby obtaining a signal having a symmetry which represents a stepped portion of the alignment pattern, whereby alignment for the wafer is performed on the basis of the signal obtained from the photoelectric conversion element. With such a construction, any influence of uneven thickness of a resist film applied on the alignment pattern can be reduced and hence a highly symmetrical signal corresponding to the stepped portion of the alignment pattern can be obtained, thereby realizing alignment with high precision.
摘要翻译： 公开了一种通过光学成像系统和用于执行该方法的装置将掩模和晶片彼此对准的投影对准方法。 该装置包括一个光学照明系统，用于以高度相干的照明光照射在晶片上形成有阶梯图案的对准图案，以及在对准图案附近的晶片的平坦或平面部分，用于制造反射光的光学干涉系统 从晶片上的对准图案和由光学照明系统照射的晶片的平坦部分的反射光彼此干涉，同时将通过光学成像系统获得的反射光的光学图像彼此光学地叠加。 光电转换元件将由光学干涉系统获得的干涉图案进行光电转换，从而获得具有对称性的信号，该对称性表示对准图案的阶梯部分，由此基于 从光电转换元件获得的信号。 通过这样的结构，可以减少施加在取向图案上的抗蚀剂膜的不均匀厚度的影响，从而可以获得与对准图案的阶梯部分对应的高度对称的信号，从而实现高精度的对准。
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公开(公告)号：US4795261A
公开(公告)日：1989-01-03
申请号：US944524
申请日：1986-12-22
CPC分类号： G03F9/7076
摘要： A reduction projection type aligner in a reduction projection exposing device for exposing a circuit pattern on a mask through a reduction projection lens onto a wafer by the step and repeat of the wafer, which comprises: a light source for irradiating coherent irradiation light, a reflection mirror for reflecting the coherent irradiation light irradiated from the light source, a detection optical system for detecting an interference pattern by optically causing interference between an alignment pattern reflection light obtained by entering the coherent irradiation light irradiated from the light source through the reduction projection lens to the alignment pattern portion of the wafer, which is then reflected at the alignment pattern portion and then passed through the reduction projection lens and a reflection light reflected at the reflection mirror, and means for aligning a mask and a wafer relatively by detecting the position of the wafer by the video image signals in the interference pattern detected by the detection optical system.
摘要翻译： 一种还原投影型对准器，用于通过晶片的步骤和重复将通过还原投影透镜将还原投影透镜上的电路图案曝露在晶片上的还原投影曝光装置中，包括：用于照射相干照射光的光源，反射 用于反射从光源照射的相干照射光的反射镜;检测光学系统，用于通过光学地引起通过将从光源经过还原投影透镜照射的相干照射光进入的对准图案反射光之间的干涉，检测干涉图案， 晶片的对准图案部分然后在对准图案部分反射然后通过还原投影透镜和在反射镜处反射的反射光，以及用于通过检测掩模和晶片的位置相对地对准掩模和晶片的位置 晶片由视频信号在干涉中 检测光学系统检测到的图案。
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