Optical information storing apparatus and method for production of
optical deflector
    1.
    发明授权
    Optical information storing apparatus and method for production of optical deflector 失效
    光学信息存储装置及其制造方法

    公开(公告)号:US5191624A

    公开(公告)日:1993-03-02

    申请号:US762935

    申请日:1991-09-19

    IPC分类号: G02B6/12 G02F1/335 G11B7/12

    摘要: An optical waveguide is comprised of an optical substrate and an optical thin-film optical waveguide layer and formed such that ##EQU1## where .theta. is an output angle, n.sub.o1 is an ordinary refractive index of the optical substrate for an ordinary beam, n.sub.e1 is an extraordinary refractive index of the optical substrate for an extraordinary beam, n.sub.o2 is an ordinary refractive index of the optical thin-film optical waveguide layer for the ordinary beam and n.sub.e2 is an extraordinary refractive index of the optical thin-film optical waveguide layer for the extraordinary beam, and an electrode for generating a surface acoustic wave for diffracting light is formed on the optical waveguide to construct a collinear optical deflector. A method for production of the optical thin-film optical waveguide layer is exemplified wherein a target made of tantalic lilthium niobate or tantalic lithium niobate magnesium and an optical substrate made of lithium tantalate are prepared and an optical thin-film optical waveguide layer having a composition of tantalic lithium niobate or tantalic lithium niobate magnesium is formed on the optical substrate through an ion beam sputtering process into which oxygen can be introduced. Proton substitutes for part of an element constituting the optical thin-film optical waveguide layer.

    摘要翻译: 光波导包括光学基板和光学薄膜光波导层,并且被形成为使得θ是输出角度的θIMA1是普通光束的光学基板的普通折射率,ne1是 用于非常光束的光学基板的非常折射率,no2是普通光束的光学薄膜光波导层的普通折射率,ne2是非常优异的光学薄膜光波导层的非常折射率 并且在光波导上形成用于产生用于衍射光的表面声波的电极,以构成共线的光学偏转器。 制备光学薄膜光波导层的方法被制备,其中制备由钽酸铌酸锂或钽酸铌镁制成的靶和由钽酸锂制成的光学衬底,并且制备具有组成的光学薄膜光波导层 通过可以引入氧气的离子束溅射工艺在光学基板上形成铌酸锂或钽酸铌酸镁。 质子代替构成光学薄膜光波导层的元件的一部分。

    Optical integrated circuit and optical apparatus
    3.
    发明授权
    Optical integrated circuit and optical apparatus 失效
    光学集成电路和光学设备

    公开(公告)号:US5070488A

    公开(公告)日:1991-12-03

    申请号:US372639

    申请日:1989-06-28

    摘要: An optical integrated circuit and an optical apparatus used in optical communication or an opto-electronics apparatus such as an optical disk recording apparatus, in which various kinds of aberration caused by wavelength variation of a light source when a semiconductor laser is used as the light source. An aberration correcting grating having such grating pitches as to nearly satisfy the Bragg condition preferably with respect to a certain wavelength of the semiconductor laser beam is used. As a result, lowering of incidence (entrance) and radiation (exit) coupling efficiencies of the grating coupler and aberration such as chromatic aberration can be prevented. Even if a multi-mode semiconductor laser is used as a light source, the characteristics of the optical integrated circuit and optical apparatus do not vary largely.

    摘要翻译: 在光通信中使用的光集成电路和光学装置或光电记录装置等光电装置,其中当使用半导体激光器作为光源时,由光源的波长变化引起的各种像差 。 使用具有这样的光栅间距几乎满足布拉格条件的像差校正光栅,优选地相对于半导体激光束的特定波长。 结果,可以防止光栅耦合器的入射(入射)和辐射(出射)耦合效率的降低以及像差等像差。 即使使用多模式半导体激光器作为光源,光集成电路和光学装置的特性也不会很大变化。

    Second harmonic generator and method of fabrication thereof
    4.
    发明授权
    Second harmonic generator and method of fabrication thereof 失效
    二次谐波发生器及其制造方法

    公开(公告)号:US5274727A

    公开(公告)日:1993-12-28

    申请号:US879361

    申请日:1992-05-07

    IPC分类号: G02F1/377 G02F1/37

    CPC分类号: G02F1/3775

    摘要: A second harmonic generator having a wide acceptance of bandwidth of temperature and/or a high conversion efficiency and a method of fabrication thereof are disclosed. An equidistant arrangement of pole-inverted grating having a rectangular sectional profile and the direction of spontaneous polarization opposite to that of a substrate within an optical waveguide has been known to produce a high conversion efficiency of the second harmonic generator A second harmonic generator having such a structure, which has so far been impossible to fabricate, is formed utilizing the liquid-phase epitaxial method and the ion-implanting method. Further, the substrate and the optical waveguide are formed of the same type of material. The temperature coefficient of the refractive index in the direction perpendicular to the substrate surface is rendered substantially equal to that of the optical waveguide, thereby improving the acceptance of bandwidth of temperature and making possible practical applications of the second harmonic generator.

    摘要翻译: 公开了具有对温度带宽的广泛接受和/或高转换效率的二次谐波发生器及其制造方法。 已知具有矩形截面轮廓和与光波导内的衬底相反的自发极化方向的等反转光栅的等距布置产生二次谐波发生器A的高转换效率二次谐波发生器具有这样的 使用液相外延法和离子注入法形成迄今为止不可能制造的结构。 此外,基板和光波导由相同类型的材料形成。 使与基板表面垂直的方向的折射率的温度系数基本上等于光波导的温度系数,从而提高了温度带宽的接受性,并且可以实现二次谐波发生器的实际应用。

    Surface acoustic waveguide device and manufacturing method
    6.
    发明授权
    Surface acoustic waveguide device and manufacturing method 失效
    表面声波导装置及其制造方法

    公开(公告)号:US5187756A

    公开(公告)日:1993-02-16

    申请号:US758608

    申请日:1991-09-12

    IPC分类号: H03H9/25 G02F1/125

    CPC分类号: G02F1/125

    摘要: The present invention relates to a surface acoustic wave element comprising a substrate, an optical waveguide layer formed on the aforesaid substrate to guide laser light from a laser light source, a surface acoustic wave portion for deflecting or modulating the laser light traveling through the aforesaid optical waveguide layer, a comb-shaped SAW electrode provided on the aforesaid optical waveguide layer to cause the aforesaid surface acoustic wave portion to generate surface acoustic wave, and a terminal provided on the aforesaid optical waveguide layer and connected to the aforesaid SAW electrode to apply a high-frequency alternating voltage thereto, wherein a protection cover is bonded by a viscoelastic adhesive having a refractive index smaller than that of the aforesaid optical waveguide layer to cover the aforesaid SAW electrode and surface acoustic wave portion with air space in such a manner that the aforesaid terminal is positioned outside thereof, and the manufacturing method of the surface acoustic wave element.

    摘要翻译: 本发明涉及一种弹性表面波元件,包括基板,形成在上述基板上的用于引导来自激光光源的激光的光波导层,用于偏转或调制通过前述光学器件行进的激光的表面声波部分 波导层,设置在上述光波导层上的梳形SAW电极,使上述声表面波部分产生声表面波;以及端子,设置在上述光波导层上,并与上述SAW电极连接, 高频交流电压,其中保护盖通过具有比上述光波导层的折射率小的折射率的粘弹性粘合剂粘结,以覆盖上述SAW电极和具有空气空间的表面声波部分,使得 上述端子位于其外侧, 声表面波元件。

    MAGNETORESISTIVE EFFECT ELEMENT AND RANDOM ACCESS MEMORY USING SAME
    8.
    发明申请
    MAGNETORESISTIVE EFFECT ELEMENT AND RANDOM ACCESS MEMORY USING SAME 审中-公开
    使用相同的磁阻效应元件和随机存取存储器

    公开(公告)号:US20130107616A1

    公开(公告)日:2013-05-02

    申请号:US13808967

    申请日:2010-07-09

    IPC分类号: H01L29/82

    摘要: A magnetoresistive effect element is provided that exhibits a low writing current density while maintaining a high TMR ratio. A laminated structure of a second ferromagnetic layer/a non-magnetic layer/a first ferromagnetic layer is employed as a recording layer. A material of bcc crystalline structure, such as CoFeB, is employed as a second ferromagnetic layer being in contact with MgO barrier layer. A material whose anisotropy field Hk⊥ in the perpendicular direction is large and that satisfies the relationship of 2πrMs

    摘要翻译: 提供了具有低写入电流密度同时保持高TMR比的磁阻效应元件。 采用第二铁磁层/非磁性层/第一铁磁层的叠层结构作为记录层。 使用诸如CoFeB的bcc晶体结构的材料作为与MgO阻挡层接触的第二铁磁层。 垂直方向的各向异性场Hk⊥大且满足2pirMs

    MAGNETIC MEMORY, METHOD OF MANUFACTURING THE SAME, AND METHOD OF DRIVING THE SAME
    9.
    发明申请
    MAGNETIC MEMORY, METHOD OF MANUFACTURING THE SAME, AND METHOD OF DRIVING THE SAME 有权
    磁记忆体,其制造方法及其驱动方法

    公开(公告)号:US20130044537A1

    公开(公告)日:2013-02-21

    申请号:US13522076

    申请日:2011-01-13

    IPC分类号: G11C11/16 H01L43/12

    摘要: There is provided a magnetic memory with using a magnetoresistive effect element of a spin-injection magnetization reversal type, in which a multi-value operation is possible and whose manufacturing and operation are simple. A preferred aim of this is solved by providing two or more magnetoresistive effect elements which are electrically connected in series to each other and by selecting one of the series-connected elements depending on a direction of a current carried in the series-connected elements, a magnitude thereof, and an order of the current thereof for performing the writing operation. For example, it is solved by differentiating plane area sizes of the respective magnetoresistive effect elements which have the same film structure from each other so as to differentiate resistance change amounts caused by respective magnetization reversal and threshold current values required for respective magnetization reversal from each other.

    摘要翻译: 提供了一种使用自旋注入磁化反转型的磁阻效应元件的磁存储器,其中多值操作是可能的,其制造和操作简单。 优选的目的是通过提供两个或更多个彼此串联电连接的磁阻效应元件来解决,并且根据串联元件中承载的电流的方向选择串联元件之一, 其大小及其电流的顺序用于执行写入操作。 例如,通过将具有相同膜结构的各个磁阻效应元件的平面面积尺寸相互分离来解决,以便区分由相应的磁化反转引起的电阻变化量和相应磁化反转所需的阈值电流值 。

    SEMICONDUCTOR DEVICE
    10.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20090310400A1

    公开(公告)日:2009-12-17

    申请号:US12545379

    申请日:2009-08-21

    IPC分类号: G11C11/02

    摘要: In MRAM using a spin-transfer torque switching, a sufficient writing operation with a small memory cell is realized, and a reading current is enlarged while a reading disturbance is suppressed. In the case where the free layer of the tunnel magneto-resistance element is located on the side of the bit line, using a PMOS transistor, and in the case where the fixed layer of the tunnel magneto-resistance element is located on the side of the bit line, using an NMOS transistor, an anti-parallel writing in a source grounding operation is performed. The reading and writing operation margin is improved by performing a reading operation in an anti-parallel writing direction.

    摘要翻译: 在使用自旋转移转矩切换的MRAM中,实现了具有小存储单元的充分的写入操作,并且在读取干扰被抑制的同时增加读取电流。 在隧道磁阻元件的自由层位于位线一侧的情况下,使用PMOS晶体管,并且在隧道磁阻元件的固定层位于 使用NMOS晶体管的位线执行源极接地操作中的反并联写入。 通过执行反并行写入方向的读取操作来提高读取和写入操作余量。