公开(公告)号：US5296391A

公开(公告)日：1994-03-22

申请号：US67017

申请日：1993-05-26

Applicant: Fumihiko Sato ,  Masahiko Nakamae ,  Mitsuhiro Sugiyama ,  Tsutomu Tashiro

Inventor： Fumihiko Sato ,  Masahiko Nakamae ,  Mitsuhiro Sugiyama ,  Tsutomu Tashiro

IPC: H01L21/331 ,  H01L29/732 ,  H01L29/737 ,  H01L21/265

CPC classification number: H01L29/66287 ,  H01L29/66242 ,  H01L29/732 ,  H01L29/7378 ,  Y10S148/01

Abstract: A method of manufacturing a semiconductor device includes a monocrystalline semiconductor layer of one conductivity type with a first insulating film covering the semiconductor layer. An aperture is selectively formed in the first insulating film to expose a part of the semiconductor layer. A first polycrystalline semiconductor film of an opposite conductivity type is formed on the first insulating film and has an overhang portion projecting over the aperture from an edge of the first insulating film defining the aperture. A second polycrystalline semiconductor film and a monocrystalline semiconductor film of the opposite conductivity type are grown simultaneously on a bottom surface of the overhang portion of the first polycrystalline semiconductor film and on the part of the monocrystalline semiconductor layer respectively until monocrystalline semiconductor film is in contact with the second polycrystalline semiconductor film, with a second insulating film selectively formed on the monocrystalline semiconductor film with leaving a part thereof to be exposed.

Abstract translation: 半导体器件的制造方法包括具有覆盖半导体层的第一绝缘膜的一种导电型单晶半导体层。 在第一绝缘膜中选择性地形成孔径以暴露半导体层的一部分。 具有相反导电型的第一多晶半导体膜形成在第一绝缘膜上，并且具有从限定孔的第一绝缘膜的边缘在孔上突出的突出部分。 在第一多晶半导体膜的突出部分的底表面和单晶半导体层的一部分上同时生长具有相反导电类型的第二多晶半导体膜和单晶半导体膜，直到单晶半导体膜与 所述第二多晶半导体膜具有选择性地形成在所述单晶半导体膜上并使其一部分露出的第二绝缘膜。

公开(公告)号：US08848138B2

公开(公告)日：2014-09-30

申请号：US13116048

申请日：2011-05-26

Applicant: Hiroshi Nakamoto ,  Mitsuhiro Sugiyama ,  Masahiro Ito

Inventor： Hiroshi Nakamoto ,  Mitsuhiro Sugiyama ,  Masahiro Ito

IPC: G02F1/1335 ,  F21V8/00

CPC classification number: G02B6/003 ,  G02B6/0016 ,  G02B6/0028 ,  G02B6/0038 ,  G02B6/0068 ,  G02F1/133514 ,  G02F1/133524 ,  G02F1/133603 ,  G02F1/133615 ,  G02F1/1368

Abstract: Provided is a liquid crystal display device includes an optical switching member; a light guide plate made of a thermoplastic material, which includes at least one light introducing portion on at least one side surface thereof; and a light source disposed on the at least one side surface, in which: the at least one light introducing portion includes, in plan view of the light guide plate: a first portion extending from a light incident surface, which is an end surface of the at least one light introducing portion, while keeping a substantially constant width; and a second portion, which extends from the first portion and has a form which widens; and at least the second portion is connected to a front surface of the light guide plate through an inclined surface which is smoothly continuous with the front surface of the light guide plate.

Abstract translation: 提供一种液晶显示装置，包括光开关元件; 由热塑性材料制成的导光板，其在至少一个侧表面上包括至少一个光引入部分; 以及设置在所述至少一个侧表面上的光源，其中：所述至少一个光导入部在所述导光板的平面图中包括从作为所述导光板的端面的光入射面延伸的第一部分 所述至少一个光导入部保持基本恒定的宽度; 以及第二部分，其从第一部分延伸并且具有变宽的形式; 并且至少第二部分通过与导光板的前表面平滑连续的倾斜表面连接到导光板的前表面。

公开(公告)号：US06417610B1

公开(公告)日：2002-07-09

申请号：US09572374

申请日：2000-05-18

Applicant: Akihito Sudo ,  Satoshi Moriwaki ,  Mitsuhiro Sugiyama

Inventor： Akihito Sudo ,  Satoshi Moriwaki ,  Mitsuhiro Sugiyama

IPC: H01J2950

CPC classification number: H01J29/503 ,  H01J29/485 ,  H01J2229/4875

Abstract: A color cathode ray has an electron gun which includes three cathodes for emitting three in-line electron beams and a plurality of electrodes fixed in a predetermined axially spaced relationship on insulating supports. At least one of the plurality of electrodes is cup-shaped and has a correction electrode therein, and edges of the correction electrode are formed with recesses and sloped portions. A distance L from a mouth of each of the recesses of the correction electrode to an inner wall of the at least one of the plurality of electrodes satisfies the following relationship: L′≦L≦15 &mgr;m, where L′ is a height of a burr caused in press-forming of the recesses.

Abstract translation: 彩色阴极射线具有电子枪，其包括用于发射三个一字形电子束的三个阴极和在绝缘支撑件上以预定的轴向间隔关系固定的多个电极。 多个电极中的至少一个是杯形的并且其中具有校正电极，并且校正电极的边缘形成有凹陷部分和倾斜部分。 从校正电极的每个凹部的口部到多个电极中的至少一个电极的内壁的距离L满足以下关系：L'<= L <=15μm，其中L'是高度 在凹部的压制成型中引起的毛刺。

公开(公告)号：US06353281B2

公开(公告)日：2002-03-05

申请号：US09833558

申请日：2001-04-13

Applicant: Mitsuhiro Sugiyama ,  Tsutomu Tojyo ,  Masahiro Ito ,  Masayoshi Misono ,  Hiroyuki Tamura

Inventor： Mitsuhiro Sugiyama ,  Tsutomu Tojyo ,  Masahiro Ito ,  Masayoshi Misono ,  Hiroyuki Tamura

IPC: H01J2950

CPC classification number: H01J29/503

Abstract: A color cathode ray tube including a panel section having a phosphor layer formed on an internal surface thereof, a neck portion having an electron gun assembly for emission of three electron beams therein, and a funnel section connecting the panel section and the neck portion. The electron gun assembly includes three cathodes and a plurality of grid electrodes disposed along a tube axis. The grid electrodes includes at least one plate-shaped electrode which has a fixed support structure. The plate-shaped electrode has three bulged portions along an electron beam passage, a first electron beam passage hole being formed in a respective bulged portion and a second electron beam passage being hole formed in a top face portion of a respective bulge portion. A diameter of the first electron beam passage hole is greater than a diameter of the second electron beam passage hole.

Abstract translation: 一种彩色阴极射线管，包括具有在其内表面上形成的荧光体层的面板部分，具有用于在其中发射三束电子束的电子枪组件的颈部和连接该面板部分和颈部的漏斗部分。 电子枪组件包括三个阴极和沿管轴设置的多个栅电极。 栅极包括至少一个具有固定支撑结构的板状电极。 板状电极沿着电子束通道具有三个凸出部分，第一电子束通孔形成在相应凸出部分中，第二电子束通道形成在相应凸起部分的顶面部分中。 第一电子束通过孔的直径大于第二电子束通过孔的直径。

公开(公告)号：US6080600A

公开(公告)日：2000-06-27

申请号：US20253

申请日：1998-02-06

Applicant: Mitsuhiro Sugiyama ,  Tsutomu Tashiro

Inventor： Mitsuhiro Sugiyama ,  Tsutomu Tashiro

IPC: H01L31/10 ,  H01L31/0352 ,  H01L31/103 ,  H01L31/18

CPC classification number: H01L31/1804 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/103 ,  Y02E10/547

Abstract: It is the object of the invention to suppress the leakage current of a semiconductor photodiode. A trench, a side wall of which is covered with and insulating layer, is formed on the surface of a semiconductor substrate of the first conductivity type. Then, an epitaxial layer of the second conductivity type is grown in the trench, where a PN-junction is constructed between the bottom surface of the epitaxial layer and the semiconductor substrate. An impurity diffusion layer of the second conductivity type with higher impurity concentration than that of an internal portion of the epitaxial semiconductor layer is formed over the side surface of the epitaxial layer of the second conductivity type. In the aforementioned structure, when a reverse bias voltage is applied to the PN-junction, a depletion layer does not extend to a neighborhood of the insulating layer, and a leakage current, which flows via surface states near the insulating layer.

Abstract translation: 本发明的目的是抑制半导体光电二极管的漏电流。 在第一导电类型的半导体衬底的表面上形成有覆盖有绝缘层的侧壁的沟槽。 然后，在沟槽中生长第二导电类型的外延层，其中在外延层的底表面和半导体衬底之间构造PN结。 在第二导电类型的外延层的侧表面上形成杂质浓度高于外延半导体层的内部部分的第二导电类型的杂质扩散层。 在上述结构中，当向PN结施加反向偏置电压时，耗尽层不会延伸到绝缘层的附近以及在绝缘层附近经由表面状态流动的漏电流。

公开(公告)号：US5999675A

公开(公告)日：1999-12-07

申请号：US934750

申请日：1997-09-22

Applicant: Mitsuhiro Sugiyama

Inventor： Mitsuhiro Sugiyama

IPC: G02B6/42 ,  H01L27/14 ,  H01L31/0232 ,  G02B6/30

CPC classification number: G02B6/423

Abstract: The present invention provides a semiconductor photodetector formed over a substrate and being positioned adjacent to an optical fiber guiding groove also formed in said substrate bounding structure, said semiconductor photodetector having an optical waveguide layer including an optical absorption layer, wherein an edge portion of said optical waveguide layer is bounded to a side portion of said optical fiber guiding groove through an insulation layer having an refractive index higher than any parts of said optical waveguide layer.

Abstract translation: 本发明提供一种半导体光电探测器，其形成在衬底上并且位于与形成在所述衬底界限结构中的光纤引导槽相邻的位置，所述半导体光电检测器具有包括光吸收层的光波导层，其中所述光学 波导层通过具有比所述光波导层的任何部分高的折射率的绝缘层限定在所述光纤引导槽的侧部。

公开(公告)号：US5886462A

公开(公告)日：1999-03-23

申请号：US916710

申请日：1997-08-25

Applicant: Akihito Sudo ,  Satoshi Moriwaki ,  Mitsuhiro Sugiyama

Inventor： Akihito Sudo ,  Satoshi Moriwaki ,  Mitsuhiro Sugiyama

IPC: H01J29/48 ,  H01J29/50

CPC classification number: H01J29/503 ,  H01J29/485 ,  H01J2229/4875

Abstract: A color cathode ray tube includes a phosphor screen, a shadow mask closely spaced from the phosphor screen and electron gun. The electron gun has a plurality of electrodes including a plurality of cathodes for emitting a plurality of in-line electron beams, a control grid having a plurality of in-line apertures centered with the cathodes, an accelerating electrode, a cup-shaped focus electrode and a cup-shaped anode fixed on insulating supports. Each of the cup-shaped focus electrode and anode has at a first end face thereof opposing the other of the cup-shaped focus electrode and anode, a single opening surrounded by a rim formed by turning in the end face thereof toward an interior thereof. Each of said cup-shaped focus electrode and anode has a correction plate electrode therein, has a step on an inner wall thereof at a position set back from the first end face thereof to provide a first portion having an inside diameter larger on an open end side thereof opposite the first end face, than that of a second portion thereof on a side of the first end face. The correction plate electrode is pressed against the step and fixed to the cup-shaped electrode, or is fixed in the second portion of the smaller inside diameter.

Abstract translation: 彩色阴极射线管包括荧光屏，与荧光屏和电子枪紧密间隔的荫罩。 电子枪具有包括用于发射多个一字形电子束的多个阴极的多个电极，具有以阴极为中心的多个直列孔的控制栅，加速电极，杯形聚焦电极 以及固定在绝缘支架上的杯形阳极。 杯形聚焦电极和阳极中的每一个在其与杯状聚焦电极和阳极中的另一个相对的第一端面处，由通过在其端面向其内部转动而形成的边缘包围的单个开口。 所述杯形聚焦电极和阳极中的每一个在其中具有校正板电极，在其内壁上具有从其第一端面设置的位置处的台阶，以提供在开口端具有较大内径的第一部分 与第一端面的与第一端面一侧的第二端面相反的一侧。 校正板电极被压靠在台阶上并固定在杯状电极上，或固定在较小内径的第二部分中。

公开(公告)号：US5763931A

公开(公告)日：1998-06-09

申请号：US531913

申请日：1995-09-21

Applicant: Mitsuhiro Sugiyama

Inventor： Mitsuhiro Sugiyama

IPC: H01L21/02 ,  H01L21/20 ,  H01L21/331 ,  H01L27/12 ,  H01L29/73 ,  H01L29/732 ,  H01L21/265 ,  H01L33/00

CPC classification number: H01L29/66265 ,  H01L29/7317

Abstract: A semiconductor device having the SOI structure is provided, which enables to reduce the size of components compared with the conventional semiconductor devices. The device contains a first insulator film formed on a semiconductor substrate, and semiconductor islands formed on the first insulator film. Each of the islands has an electronic component. The device further contains semiconductor sidewalls formed to surround the respective islands. The sidewalls are contacted with outer sides of the corresponding islands. Electrodes are formed outside the islands to be contacted with the corresponding sidewalls. A second insulator film is formed on the exposed first insulator film from the islands to laterally isolate the respective islands and the corresponding sidewalls from each other. The electronic components are electrically connected to the respective electrodes through the corresponding sidewalls. Preferably, the components provided in the islands are bipolar transistors, and the electrodes are used as collector electrodes.

Abstract translation: 提供了具有SOI结构的半导体器件，与常规半导体器件相比，能够减小元件的尺寸。 该器件包含形成在半导体衬底上的第一绝缘膜和形成在第一绝缘膜上的半导体岛。 每个岛屿都有一个电子元件。 该器件还包含形成为围绕各个岛的半导体侧壁。 侧壁与相应的岛的外侧接触。 电极形成在岛外部以与相应的侧壁接触。 在岛上暴露的第一绝缘膜上形成第二绝缘膜，以横向隔离相应的岛和相应的侧壁。 电子部件通过相应的侧壁电连接到相应的电极。 优选地，设置在岛中的部件是双极晶体管，并且电极用作集电极。

公开(公告)号：US5731622A

公开(公告)日：1998-03-24

申请号：US805224

申请日：1997-02-24

Applicant: Mitsuhiro Sugiyama ,  Tsutomu Tashiro

Inventor： Mitsuhiro Sugiyama ,  Tsutomu Tashiro

IPC: H01L31/10 ,  H01L31/0352 ,  H01L31/103 ,  H01L31/18 ,  H01L31/00

CPC classification number: H01L31/1804 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/103 ,  Y02E10/547

Abstract: It is the object of the invention to suppress the leakage current of a semiconductor photodiode. A trench, a side wall of which is covered with and insulating layer, is formed on the surface of a semiconductor substrate of the first conductivity type. Then, an epitaxial layer of the second conductivity type is grown in the trench, where a PN-junction is constructed between the bottom surface of the epitaxial layer and the semiconductor substrate. An impurity diffusion layer of the second conductivity type with higher impurity concentration than that of an internal portion of the epitaxial semiconductor layer is formed over the side surface of the epitaxial layer of the second conductivity type. In the aforementioned structure, when a reverse bias voltage is applied to the PN-junction, a depletion layer does not extend to a neighborhood of the insulating layer, and a leakage current, which flows via surface states near the insulating layer.

Abstract translation: 本发明的目的是抑制半导体光电二极管的漏电流。 在第一导电类型的半导体衬底的表面上形成有覆盖有绝缘层的侧壁的沟槽。 然后，在沟槽中生长第二导电类型的外延层，其中在外延层的底表面和半导体衬底之间构造PN结。 在第二导电类型的外延层的侧表面上形成杂质浓度高于外延半导体层的内部部分的第二导电类型的杂质扩散层。 在上述结构中，当向PN结施加反向偏置电压时，耗尽层不会延伸到绝缘层的附近以及在绝缘层附近经由表面状态流动的漏电流。