公开(公告)号：US20080099933A1

公开(公告)日：2008-05-01

申请号：US11554954

申请日：2006-10-31

Applicant: Kenric T. Choi ,  Pravin K. Narwankar ,  Shreyas S. Kher ,  Son T. Nguyen ,  Paul Deaton ,  Khai Ngo ,  Paul Chhabra ,  Alan H. Ouye ,  Dien-Yeh (Daniel) Wu

Inventor： Kenric T. Choi ,  Pravin K. Narwankar ,  Shreyas S. Kher ,  Son T. Nguyen ,  Paul Deaton ,  Khai Ngo ,  Paul Chhabra ,  Alan H. Ouye ,  Dien-Yeh (Daniel) Wu

IPC: F16K13/00 ,  B01F3/04

CPC classification number: C23C16/4481

Abstract: A method and apparatus for providing a precursor to a process chamber is described. The apparatus comprises an ampoule capable of receiving either a liquid precursor source material or a solid precursor source material. The ampoule is capable of delivering either a liquid precursor material to a vaporizer coupled to the process chamber, or a vaporized or gaseous precursor material to the process chamber. The ampoule also includes a continuous level sensor to accurately monitor the level of precursor source material within the ampoule.

Abstract translation: 描述了一种用于向处理室提供前体的方法和装置。 该装置包括能够接收液体前体源材料或固体前体源材料的安瓿。 安瓿能够将液体前体材料输送到耦合到处理室的蒸发器，或将蒸发的或气态的前体材料输送到处理室。 安瓿还包括连续液位传感器，以准确地监测安瓿内的前体源材料的含量。

公开(公告)号：US06573150B1

公开(公告)日：2003-06-03

申请号：US09686451

申请日：2000-10-10

Applicant: Randall S. Urdahl ,  Pravin K. Narwankar ,  Shankarrram A. Athreya ,  Asher K. Sinensky ,  Andrea M. Mendoza

Inventor： Randall S. Urdahl ,  Pravin K. Narwankar ,  Shankarrram A. Athreya ,  Asher K. Sinensky ,  Andrea M. Mendoza

IPC: H01L2120

CPC classification number: H01L28/75 ,  H01L21/28568 ,  H01L21/31604 ,  H01L28/40 ,  Y10S438/907

Abstract: The present invention provides a method of integrating tantalum oxide into an MIM capacitor for a semiconductor device, comprising the step of vapor-depositing the tantalum oxide from an oxygen-free liquid precursor and under process conditions comprising a deposition temperature of less than about 500° C. and a deposition pressure of less than about 96 Torr, wherein the tantalum oxide is integrated into the MIM capacitor. Also provided is a method of forming an MIM capacitor comprising the step of integrating a tantalum oxide dielectric film with a tantalum nitride or a titanium nitride bottom electrode deposited on a substrate and a titanium nitride top electrode thereby forming an MIM capacitor.

Abstract translation: 本发明提供了一种将钽氧化物整合到用于半导体器件的MIM电容器中的方法，包括从无氧液体前体气相沉积氧化钽的步骤，并且在包括小于约500°的沉积温度的工艺条件下 并且小于约96托的沉积压力，其中所述氧化钽被集成到所述MIM电容器中。 还提供了一种形成MIM电容器的方法，包括将钽氧化物电介质膜与沉积在衬底上的氮化钽或氮化钛底电极和氮化钛上电极集成的步骤，从而形成MIM电容器。

公开(公告)号：US06204203B1

公开(公告)日：2001-03-20

申请号：US09172582

申请日：1998-10-14

Applicant: Pravin K. Narwankar ,  Turgut Sahin ,  Gregory F. Redinbo ,  Patricia M. Liu ,  Huyen T. Tran

Inventor： Pravin K. Narwankar ,  Turgut Sahin ,  Gregory F. Redinbo ,  Patricia M. Liu ,  Huyen T. Tran

IPC: H01L2131

CPC classification number: H01L21/28185 ,  H01J37/32862 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: A method of forming a metal oxide dielectric film. According to the present invention an amorphous metal oxide dielectric film is deposited over a substrate utilizing a metal organic precursor. The substrate is then heated in an inert ambient to convert the amorphous metal oxide dielectric to a polycrystalline metal oxide dielectric. The polycrystalline metal dielectric is then heated in a oxygen containing ambients.

Abstract translation: 一种形成金属氧化物电介质膜的方法。 根据本发明，使用金属有机前体将非晶金属氧化物介电膜沉积在衬底上。 然后将衬底在惰性环境中加热以将非晶态金属氧化物电介质转化为多晶金属氧化物电介质。 然后在含氧环境中加热多晶金属电介质。

公开(公告)号：US6037235A

公开(公告)日：2000-03-14

申请号：US152871

申请日：1998-09-14

Applicant: Pravin K. Narwankar ,  Randall S. Urdahl ,  Turgut Sahin ,  Wong-Cheng Shih

Inventor： Pravin K. Narwankar ,  Randall S. Urdahl ,  Turgut Sahin ,  Wong-Cheng Shih

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/314 ,  H01L21/318 ,  H01L29/51 ,  H01L21/20 ,  B05D5/12 ,  H01L21/31 ,  H01L21/469 ,  H01L21/8242

CPC classification number: H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3185 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L28/56

Abstract: A method for improving the interface between a silicon nitride film and a silicon surface is described. According to the present invention a silicon nitride film is formed on a silicon surface of a substrate. While said substrate is heated the silicon nitride film is exposed to an ambient comprising hydrogen (H.sub.2). In a prefered embodiment of the present invention the ambient comprises H.sub.2 and N.sub.2.

Abstract translation: 描述了一种用于改善氮化硅膜和硅表面之间的界面的方法。 根据本发明，在衬底的硅表面上形成氮化硅膜。 当所述衬底被加热时，氮化硅膜暴露于包含氢气（H 2）的环境中。 在本发明的优选实施方案中，环境包括H 2和N 2。