Method for using a conductive tungsten nitride etch stop layer to form
conductive interconnects and tungsten nitride contact structure
    31.
    发明授权
    Method for using a conductive tungsten nitride etch stop layer to form conductive interconnects and tungsten nitride contact structure 失效
    使用导电氮化钨蚀刻停止层形成导电互连和氮化钨接触结构的方法

    公开(公告)号:US6001726A

    公开(公告)日:1999-12-14

    申请号:US822670

    申请日:1997-03-24

    CPC classification number: H01L21/32134 H01L21/76841 H01L21/76885

    Abstract: A method for forming a contact structure (10) which enables the use of ultra-shallow source/drain junctions begins by forming source and drain regions (14) and gate electrode (16). The source and drain regions (14) and the gate electrode (16) are silicided to form silicide regions (20). A conductive tungsten nitride etch stop layer (22) is formed overlying the silicide regions (20). Contact plug regions (28) are then formed to contact to the etch stop layer (22) and silicided regions (20). At this point, all of the silicide regions (20) are electrically short circuited. To remove this electric short circuit, an isotropic etch process comprising hydrogen peroxide, ammonium hydroxide, and water is used to remove portions of the tungsten nitride regions which are between the individual contact portions (28) in a self-aligned manner.

    Abstract translation: 形成能够使用超浅源极/漏极结的接触结构(10)的方法开始于形成源极和漏极区域(14)和栅极电极(16)。 源极和漏极区域(14)和栅极电极(16)被硅化以形成硅化物区域(20)。 形成覆盖硅化物区域(20)的导电氮化钨蚀刻停止层(22)。 接触塞区域(28)然后形成为与蚀刻停止层(22)和硅化区域(20)接触。 此时,所有硅化物区域(20)都电短路。 为了去除该电短路,使用包括过氧化氢,氢氧化铵和水的各向同性蚀刻工艺,以自对准的方式去除位于各个接触部分(28)之间的部分氮化钨区域。

    Pad conditioner and method
    33.
    发明授权
    Pad conditioner and method 失效
    垫调节剂和方法

    公开(公告)号:US08398463B2

    公开(公告)日:2013-03-19

    申请号:US12636644

    申请日:2009-12-11

    Applicant: Rajeev Bajaj

    Inventor: Rajeev Bajaj

    CPC classification number: B24B53/017 B23K26/3576 B24B53/095

    Abstract: A polishing pad conditioning apparatus includes a laser beam generating unit for providing a laser beam, a fluid delivery system for providing a fluid stream and a vacuum line for removing debris. The laser beam may directly impinge on a surface of a polishing pad thereby creating cutting action, while an atomized fluid stream provides cooling and pad debris along with fluid are removed thru the vacuum line. Alternatively, the laser beam may be combined with the atomized fluid stream in a region above the pad surface to substantially impart part of its energy to the fluid stream, generating high energy droplets which provide “cool” cutting action on the pad surface.

    Abstract translation: 抛光垫调节装置包括用于提供激光束的激光束产生单元,用于提供流体流的流体输送系统和用于去除碎屑的真空管线。 激光束可以直接冲击抛光垫的表面,从而产生切割作用,而雾化的流体流提供冷却和垫片碎屑以及流体通过真空管线被去除。 或者,激光束可以与垫表面上方的区域中的雾化流体流组合,以将其能量的一部分基本上赋予流体流,从而产生高能量液滴,其在焊盘表面上提供冷切割作用。

    Polishing pad composition
    34.
    发明授权
    Polishing pad composition 有权
    抛光垫组成

    公开(公告)号:US08177603B2

    公开(公告)日:2012-05-15

    申请号:US12431515

    申请日:2009-04-28

    Applicant: Rajeev Bajaj

    Inventor: Rajeev Bajaj

    CPC classification number: B24B37/24 B29C45/0013 B29L2031/736

    Abstract: Polishing pads for use in chemical mechanical planarization (CMP) or polishing elements/surfaces of such pads are made from a combination of immiscible polymers, for example polyurethane and polyolefin. The polymers are selected on the basis of interfacial interaction, melt index and ratios of melt indices between the polymer phases—a matrix phase and a dispersed phase. By selecting the polymer system such that the two polymers are immiscible in one another and preferentially form separate domains, the dispersed phase can be removed when conditioning or polishing processes expose it. The melt index of individual polymers and the ratio of melt indices determines dispersability of a smaller phase into the matrix, hence the phase size.

    Abstract translation: 用于化学机械平面化(CMP)或抛光元件/这种焊盘表面的抛光垫由不混溶的聚合物,例如聚氨酯和聚烯烃的组合制成。 基于界面相互作用,熔体指数和聚合物相之间的熔体指数(基质相和分散相)的比例选择聚合物。 通过选择聚合物体系使得两种聚合物彼此不混溶并且优先形成分离的结构域,当调理或抛光工艺暴露时,可以除去分散相。 单个聚合物的熔体指数和熔体指数的比率决定了较小相分散到基质中的分散性,因此确定了相尺寸。

    POLISHING PAD AND METHOD OF USE
    35.
    发明申请
    POLISHING PAD AND METHOD OF USE 审中-公开
    抛光垫及其使用方法

    公开(公告)号:US20110244768A1

    公开(公告)日:2011-10-06

    申请号:US13162508

    申请日:2011-06-16

    Applicant: Rajeev Bajaj

    Inventor: Rajeev Bajaj

    CPC classification number: B24B37/24 B24B37/042 H01L21/32125

    Abstract: A polishing pad has one or more polishing elements made from a hydrogel material having an intrinsic ability to absorb water. The hydrogel material may or may not have micropores, but has a water absorption capability of 4%-60% by weight, a wet tensile strength greater than 1000 psi, a flexural modulus greater than 2000 psi, and a wet Shore D hardness between 25-80, inclusive. The hydrogel material may be made from one or a combination of the following moieties: urethane, alkylene oxides, esters, ethers, acrylic acids, acrylamides, amides, imides, vinylalcohols, vinylacetates, acrylates, methacrylates, sulfones, urethanes, vinylchlorides, etheretherketones, and/or carbonates.

    Abstract translation: 抛光垫具有由具有吸收水的固有能力的水凝胶材料制成的一个或多个抛光元件。 水凝胶材料可以具有或可以不具有微孔,但是其吸水能力为4重量%-60重量%,湿拉伸强度大于1000psi,挠曲模量大于2000psi,湿肖氏D硬度为25 -80,包括 水凝胶材料可以由以下部分中的一种或组合制成:氨基甲酸酯,环氧烷,酯,醚,丙烯酸,丙烯酰胺,酰胺,酰亚胺,乙烯醇,乙酸乙烯酯,丙烯酸酯,甲基丙烯酸酯,砜,氨基甲酸酯,氯乙烯,醚醚, 和/或碳酸酯。

    Method and apparatus for improved chemical mechanical planarization and CMP pad
    36.
    发明授权
    Method and apparatus for improved chemical mechanical planarization and CMP pad 有权
    用于改进化学机械平面化和CMP垫的方法和装置

    公开(公告)号:US07846008B2

    公开(公告)日:2010-12-07

    申请号:US11697622

    申请日:2007-04-06

    Applicant: Rajeev Bajaj

    Inventor: Rajeev Bajaj

    CPC classification number: B24B37/26

    Abstract: A polishing pad includes a guide plate, a porous slurry distribution layer and a flexible under-layer. Polishing elements are interdigitated with one another through the slurry distribution layer and the guide plate. The polishing elements may be affixed to the compressible under-layer and pass through corresponding holes in the guide plate so as to be maintained in a substantially vertical orientation with respect to the compressible under-layer but be translatable in a vertical direction with respect to the guide plate. Optionally, a membrane may be positioned between the guide plate and the slurry distribution layer. The polishing pad may also include wear sensors to assist in determinations of pad wear and end-of-life.

    Abstract translation: 抛光垫包括导板,多孔浆料分布层和柔性底层。 抛光元件通过浆料分布层和引导板相互交错。 抛光元件可以固定到可压缩底层并穿过导向板中的相应孔,以便相对于可压缩底层保持基本垂直的方向,但是可以相对于可压缩底层的垂直方向平移 导板。 可选地,膜可以定位在引导板和浆料分布层之间。 抛光垫还可以包括磨损传感器,以帮助确定垫磨损和使用寿命。

    POLISHING PAD WITH ENDPOINT WINDOW AND SYSTEMS AND METHOD USING THE SAME
    37.
    发明申请
    POLISHING PAD WITH ENDPOINT WINDOW AND SYSTEMS AND METHOD USING THE SAME 有权
    具有端点窗口和系统的抛光垫及使用其的方法

    公开(公告)号:US20100130112A1

    公开(公告)日:2010-05-27

    申请号:US12616323

    申请日:2009-11-11

    Applicant: Rajeev Bajaj

    Inventor: Rajeev Bajaj

    CPC classification number: B24B37/205

    Abstract: A polishing pad includes a guide plate, a compressible foam under layer disposed adjacent to a lower surface of the guide plate, and a plurality of polishing elements that extend in a first direction substantially normal to a plane defined by the guide plate and through the guide plate. The pad further includes an optical path along the first direction and which is defined by an aperture in the compressible foam under layer and the guide plate. The optical path includes a transparent window that extends above an upper surface of the guide plate but below tips of the polishing elements, the upper surface of the guide plate being opposite the lower surface thereof. An optional slurry distribution layer may be disposed on the upper surface of the guide plate, in which case the polishing elements extend through the slurry distribution layer and the transparent window extends beyond a top surface thereof.

    Abstract translation: 抛光垫包括引导板,与导板的下表面相邻设置的可压缩泡沫底层,以及多个抛光元件,其沿基本上垂直于由导板限定的平面的第一方向延伸并穿过导向件 盘子。 衬垫还包括沿着第一方向的光路,并且由可压缩泡沫底层和引导板中的孔限定。 光路包括在导板的上表面上方但在抛光元件的顶端之上的透明窗口,导向板的上表面与其下表面相对。 可选的浆料分配层可以设置在导向板的上表面上,在这种情况下,抛光元件延伸穿过浆料分布层,并且透明窗延伸超过其顶表面。

    POLISHING PAD COMPOSITION AND METHOD OF MANUFACTURE AND USE
    38.
    发明申请
    POLISHING PAD COMPOSITION AND METHOD OF MANUFACTURE AND USE 有权
    抛光垫组合物及其制造和使用方法

    公开(公告)号:US20090270019A1

    公开(公告)日:2009-10-29

    申请号:US12431515

    申请日:2009-04-28

    Applicant: Rajeev Bajaj

    Inventor: Rajeev Bajaj

    CPC classification number: B24B37/24 B29C45/0013 B29L2031/736

    Abstract: Polishing pads for use in chemical mechanical planarization (CMP) or polishing elements/surfaces of such pads are made from a combination of immiscible polymers, for example polyurethane and polyolefin. The polymers are selected on the basis of interfacial interaction, melt index and ratios of melt indices between the polymer phases—a matrix phase and a dispersed phase. By selecting the polymer system such that the two polymers are immiscible in one another and preferentially form separate domains; the dispersed phase can be removed when conditioning or polishing processes expose it. The melt index of individual polymers and the ratio of melt indices determines dispersability of a smaller phase into the matrix, hence the phase size.

    Abstract translation: 用于化学机械平面化(CMP)或抛光元件/这种焊盘表面的抛光垫由不混溶的聚合物,例如聚氨酯和聚烯烃的组合制成。 基于界面相互作用,熔体指数和聚合物相之间的熔体指数(基质相和分散相)的比例选择聚合物。 通过选择聚合物体系使得两种聚合物彼此不混溶并优先形成分离的结构域; 当调理或抛光过程暴露时,可以去除分散相。 单个聚合物的熔体指数和熔体指数的比率决定了较小相分散到基质中的分散性,因此确定了相尺寸。

    METHOD OF REMOVAL PROFILE MODULATION IN CMP PADS
    39.
    发明申请
    METHOD OF REMOVAL PROFILE MODULATION IN CMP PADS 审中-公开
    CMP PADS中移除轮廓调制方法

    公开(公告)号:US20090011679A1

    公开(公告)日:2009-01-08

    申请号:US12141876

    申请日:2008-06-18

    CPC classification number: B24B37/26

    Abstract: A polishing pad includes a plurality of polishing surfaces, a first group of the polishing surfaces made of a first material having a first coefficient of friction and a second group of the polishing surfaces made of a second material having a second coefficient of friction. The first and second groups of polishing surfaces may be arranged over the polishing pad so as to provide a non-planar material removal profile. The polishing surface layout may be designed by evaluating a material removal profile for an existing polishing pad of known characteristics, observing how variations in polishing surface densities and/or coefficients of friction affect that material removal profile, and then mapping the polishing surface coefficients of friction and density profiles to the subject polishing pad layout.

    Abstract translation: 抛光垫包括多个抛光表面,由具有第一摩擦系数的第一材料制成的第一组抛光表面和由具有第二摩擦系数的第二材料制成的第二组抛光表面。 第一组和第二组抛光表面可以布置在抛光垫上方,以便提供非平面材料去除轮廓。 可以通过评估已知特征的现有抛光垫的材料去除轮廓来设计抛光表面布局,观察抛光表面密度和/或摩擦系数的变化如何影响材料去除曲线,然后映射抛光表面摩擦系数 以及与主体抛光垫布局的密度分布。

    Chemical mechanical polishing method and apparatus for controlling material removal profile
    40.
    发明申请
    Chemical mechanical polishing method and apparatus for controlling material removal profile 审中-公开
    化学机械抛光方法和控制材料去除特性的装置

    公开(公告)号:US20050159084A1

    公开(公告)日:2005-07-21

    申请号:US10761877

    申请日:2004-01-21

    CPC classification number: B24B37/26 B24B37/042 B24B37/245

    Abstract: A material removal apparatus employing a showerhead with non-planar topography is provided. The showerhead surface includes a plurality of fluid zones to apply a fluid pressure to a backside of a polishing pad while a front side of the polishing-pad polishes a substrate. The varying topography of the showerhead surface and the resulting variable gap between a backside of a polishing pad and the non-planar surface of showerhead provide a well-defined fluid distribution and pressure profile for each zone. Such well-defined fluid distribution and pressure profiles, in turn, establish well-defined material removal rates on the substrate as the polishing pad polishes the substrate.

    Abstract translation: 提供了采用具有非平面形貌的喷头的材料去除装置。 喷头表面包括多个流体区域,以在抛光垫的前侧抛光衬底时将流体压力施加到抛光垫的背面。 淋浴头表面的变化的形状以及抛光垫的背面与喷头的非平面表面之间产生的可变间隙为每个区域提供了明确的流体分布和压力分布。 随着抛光垫抛光衬底,这种明确定义的流体分布和压力分布进而在衬底上建立了明确的材料去除速率。

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