公开(公告)号：US08592821B2

公开(公告)日：2013-11-26

申请号：US13447446

申请日：2012-04-16

申请人： Shinobu Furukawa ,  Ryota Imahayashi

发明人： Shinobu Furukawa ,  Ryota Imahayashi

IPC分类号： H01L27/14

CPC分类号： H01L51/105 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/5203 ,  H01L51/5296

摘要： It is an object of the present invention to provide an organic transistor having a low drive voltage. It is also another object of the present invention to provide an organic transistor, in which light emission can be obtained, which can be manufactured simply and easily. According to an organic light-emitting transistor, a composite layer containing an organic compound having a hole-transporting property and a metal oxide is used as part of the electrode that injects holes among source and drain electrodes, and a composite layer containing an organic compound having an electron-transporting property and an alkaline metal or an alkaline earth metal is used as part of the electrode that injects electrons, where either composite layer has a structure of being in contact with an organic semiconductor layer.

公开(公告)号：US08501530B2

公开(公告)日：2013-08-06

申请号：US13010395

申请日：2011-01-20

申请人： Shinobu Furukawa ,  Ryota Imahayashi

发明人： Shinobu Furukawa ,  Ryota Imahayashi

IPC分类号： H01L21/00 ,  H01L51/40 ,  H01L21/22 ,  H01L21/38

CPC分类号： H01L51/0545 ,  B82Y10/00 ,  H01L27/283 ,  H01L27/3244 ,  H01L51/0046 ,  H01L51/0059 ,  H01L51/0068 ,  H01L51/0078 ,  H01L51/0562

摘要： It is an object of the present invention to form an organic transistor including an organic semiconductor having high crystallinity without loosing an interface between an organic semiconductor of a channel where carriers are spread out and a gate insulating layer and deteriorating a yield. A semiconductor device according to the present invention has a stacked structure of organic semiconductor layers, and at least the upper organic semiconductor layer is in a polycrystalline or a single crystalline state and the lower organic semiconductor layer is made of a material serving as a channel. Carrier mobility can be increased owing to the upper organic semiconductor layer having high crystallinity; thus, insufficient contact due to the upper organic semiconductor layer can be compensated by the lower organic semiconductor layer.

摘要翻译： 本发明的目的是形成具有高结晶度的有机半导体的有机晶体管，而不会失去载流子扩散的沟道的有机半导体与栅极绝缘层之间的界面，从而劣化产率。 根据本发明的半导体器件具有有机半导体层的堆叠结构，并且至少上部有机半导体层处于多晶或单晶状态，下部有机半导体层由用作沟道的材料制成。 由于具有高结晶度的上有机半导体层可以增加载流子迁移率; 因此，通过下部有机半导体层可以补偿由于上部有机半导体层引起的接触不足。

公开(公告)号：US08187953B2

公开(公告)日：2012-05-29

申请号：US12550520

申请日：2009-08-31

申请人： Yuta Endo ,  Ryota Imahayashi ,  Ryosuke Murata

发明人： Yuta Endo ,  Ryota Imahayashi ,  Ryosuke Murata

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  H01L22/12 ,  H01L22/20

摘要： An object of the present invention is to improve use efficiency of a semiconductor substrate without lowering efficiency of a fabrication process. Another object of the present invention is to achieve cost reduction by effective use of a semiconductor substrate whose thickness is reduced due to repeated use in a process of manufacturing an SOI substrate. In a process of manufacturing an SOI substrate, a semiconductor substrate is used as a bond substrate a predetermined number of times, or as long as it meets predetermined conditions. In a case where a first single crystal semiconductor substrate cannot be used as a bond substrate, it is bonded to a second single crystal semiconductor substrate. Then, a stacked-layer substrate formed from the first single crystal semiconductor substrate and the second single crystal semiconductor substrate bonded to each other is used as a bond substrate in a process of manufacturing an SOI substrate.

摘要翻译： 本发明的目的是提高半导体衬底的使用效率，而不会降低制造工艺的效率。 本发明的另一个目的是通过有效地利用在制造SOI衬底的过程中重复使用而减小厚度的半导体衬底来实现成本降低。 在制造SOI衬底的过程中，半导体衬底作为接合衬底使用预定次数，或者只要满足预定条件即可。 在第一单晶半导体衬底不能用作接合衬底的情况下，其结合到第二单晶半导体衬底。 然后，在制造SOI衬底的过程中，使用由第一单晶半导体衬底和彼此接合的第二单晶半导体衬底形成的叠层衬底作为接合衬底。

公开(公告)号：US08049208B2

公开(公告)日：2011-11-01

申请号：US11887650

申请日：2006-04-19

申请人： Ryota Imahayashi ,  Shinobu Furukawa ,  Shunpei Yamazaki

发明人： Ryota Imahayashi ,  Shinobu Furukawa ,  Shunpei Yamazaki

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L23/58

CPC分类号： H01L51/105 ,  H01L51/0062 ,  H01L51/0541 ,  H01L51/0545

摘要： It is an object of the present invention, in a case of using a conductive material as part of an electrode for an organic transistor, to provide an organic transistor having a structure whose characteristics are not controlled by the work function of the conductive material. Moreover, it is other objects of the present invention to provide an organic transistor having favorable carrier mobility and to provide an organic transistor which is excellent in durability. A composite layer containing an organic compound and an inorganic material is used for an electrode for an organic field effect transistor, that is, at least part of one of a source electrode and a drain electrode in the organic field effect transistor.

摘要翻译： 本发明的目的是，在使用导电材料作为有机晶体管的电极的一部分的情况下，提供具有不受导电材料的功函数特性控制的结构的有机晶体管。 此外，本发明的其它目的是提供具有良好的载流子迁移率的有机晶体管，并提供耐久性优异的有机晶体管。 含有有机化合物和无机材料的复合层用于有机场效应晶体管的电极，即有机场效应晶体管中的源电极和漏电极中的至少一部分。

公开(公告)号：US20110111555A1

公开(公告)日：2011-05-12

申请号：US13010395

申请日：2011-01-20

申请人： Shinobu FURUKAWA ,  Ryota IMAHAYASHI

发明人： Shinobu FURUKAWA ,  Ryota IMAHAYASHI

IPC分类号： H01L51/40

CPC分类号： H01L51/0545 ,  B82Y10/00 ,  H01L27/283 ,  H01L27/3244 ,  H01L51/0046 ,  H01L51/0059 ,  H01L51/0068 ,  H01L51/0078 ,  H01L51/0562

摘要： It is an object of the present invention to form an organic transistor including an organic semiconductor having high crystallinity without loosing an interface between an organic semiconductor of a channel where carriers are spread out and a gate insulating layer and deteriorating a yield. A semiconductor device according to the present invention has a stacked structure of organic semiconductor layers, and at least the upper organic semiconductor layer is in a polycrystalline or a single crystalline state and the lower organic semiconductor layer is made of a material serving as a channel. Carrier mobility can be increased owing to the upper organic semiconductor layer having high crystallinity; thus, insufficient contact due to the upper organic semiconductor layer can be compensated by the lower organic semiconductor layer.

摘要翻译： 本发明的目的是形成具有高结晶度的有机半导体的有机晶体管，而不会失去载流子扩散的沟道的有机半导体与栅极绝缘层之间的界面，从而劣化产率。 根据本发明的半导体器件具有有机半导体层的堆叠结构，并且至少上部有机半导体层处于多晶或单晶状态，下部有机半导体层由用作沟道的材料制成。 由于具有高结晶度的上有机半导体层可以增加载流子迁移率; 因此，通过下部有机半导体层可以补偿由于上部有机半导体层引起的接触不足。

公开(公告)号：US20110065263A1

公开(公告)日：2011-03-17

申请号：US12859547

申请日：2010-08-19

申请人： Ryota IMAHAYASHI ,  Hideto OHNUMA

发明人： Ryota IMAHAYASHI ,  Hideto OHNUMA

IPC分类号： H01L21/322 ,  H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02024 ,  H01L21/02032 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/30604 ,  H01L21/3221

摘要： It is an object of the invention is to provide a method suitable for reprocessing a semiconductor substrate having favorable planarity. Another object of the invention is to manufacture a reprocessed semiconductor substrate by using the method suitable for reprocessing a semiconductor substrate having favorable planarity, and to manufacture an SOI substrate by using the reprocessed semiconductor substrate. A projecting portion of a semiconductor substrate is removed using a method capable of selectively removing a semiconductor region which is damaged by ion irradiation or the like. Further, an oxide film is formed on a surface of the semiconductor substrate when the semiconductor substrate is planarized by a polishing treatment typified by a CMP method, whereby the semiconductor substrate is evenly polished at a uniform rate. Moreover, a reprocessed semiconductor substrate is manufactured using the aforementioned method, and an SOI substrate is manufactured using the reprocessed semiconductor substrate.

摘要翻译： 本发明的目的是提供一种适于对具有良好平坦度的半导体衬底进行再加工的方法。 本发明的另一个目的是通过使用适合于对具有良好平面性的半导体衬底进行再处理的方法来制造再处理的半导体衬底，以及通过使用再处理的半导体衬底来制造SOI衬底。 使用能够选择性地去除由离子照射等损坏的半导体区域的方法来去除半导体衬底的突出部分。 此外，当通过以CMP方法为代表的抛光处理使半导体衬底平坦化时，在半导体衬底的表面上形成氧化物膜，由此以均匀的速率均匀地抛光半导体衬底。 此外，使用上述方法制造再处理的半导体衬底，并且使用再处理半导体衬底制造SOI衬底。

公开(公告)号：US20100297809A1

公开(公告)日：2010-11-25

申请号：US12850652

申请日：2010-08-05

申请人： Ryota IMAHAYASHI ,  Shinobu FURUKAWA ,  Atsuo ISOBE ,  Yasuyuki ARAI ,  Shunpei YAMAZAKI

发明人： Ryota IMAHAYASHI ,  Shinobu FURUKAWA ,  Atsuo ISOBE ,  Yasuyuki ARAI ,  Shunpei YAMAZAKI

IPC分类号： H01L51/40

CPC分类号： H01L51/0512 ,  H01L21/02175 ,  H01L21/02244 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/31683 ,  H01L51/0002 ,  H01L51/0055 ,  H01L51/0525 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0566

摘要： It is an object to form a high quality gate insulating film which is dense and has a strong insulation resistance property, and to propose a high reliable organic transistor in which a tunnel leakage current is little. One mode of the organic transistor of the present invention has a step of forming the gate insulating film by forming the conductive layer which becomes the gate electrode activating oxygen (or gas including oxygen) or nitrogen (or gas including nitrogen) or the like using dense plasma in which density of electron is 1011 cm−3 or more, and electron temperature is a range of 0.2 eV to 2.0 eV with plasma activation, and reacting directly with a portion of the conductive layer which becomes the gate electrode to be insulated.

摘要翻译： 本发明的目的是形成致密且具有很强绝缘电阻特性的高质量栅极绝缘膜，并且提出了隧道泄漏电流很小的高可靠性有机晶体管。 本发明的有机晶体管的一种模式具有如下步骤：通过使用密集的方法形成作为活化氧（或含氧气体）或氮（或含氮气体）的栅极的导电层形成栅极绝缘膜 电子密度为1011cm -3以上的等离子体，等离子体活化时电子温度为0.2eV〜2.0eV的范围，直接与成为要被绝缘的栅电极的导体层的一部分反应。

公开(公告)号：US20100203706A1

公开(公告)日：2010-08-12

申请号：US12762600

申请日：2010-04-19

申请人： Hideto OHNUMA ,  Ryota IMAHAYASHI ,  Yoichi IIKUBO ,  Kenichiro MAKINO ,  Sho NAGAMATSU

发明人： Hideto OHNUMA ,  Ryota IMAHAYASHI ,  Yoichi IIKUBO ,  Kenichiro MAKINO ,  Sho NAGAMATSU

IPC分类号： H01L21/762

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/78654

摘要： It is an object of the present invention is to provide a method of manufacturing an SOI substrate provided with a single-crystal semiconductor layer which can be practically used even when a substrate having a low heat-resistant temperature, such as a glass substrate or the like, is used, and further, to manufacture a semiconductor device with high reliability by using such an SOI substrate. A semiconductor layer which is separated from a semiconductor substrate and bonded to a supporting substrate having an insulating surface is irradiated with electromagnetic waves, and the surface of the semiconductor layer is subjected to polishing treatment. At least part of a region of the semiconductor layer is melted by irradiation with electromagnetic waves, and a crystal defect in the semiconductor layer can be reduced. Further, the surface of the semiconductor layer can be polished and planarized by polishing treatment.

摘要翻译： 本发明的一个目的是提供一种制造具有单晶半导体层的SOI衬底的方法，即使当具有低耐热温度的衬底如玻璃衬底或 并且进一步通过使用这种SOI衬底制造具有高可靠性的半导体器件。 将与半导体基板分离并与具有绝缘面的支撑基板接合的半导体层用电磁波照射，对半导体层的表面进行抛光处理。 半导体层的区域的至少一部分通过电磁波的照射而熔融，能够降低半导体层的晶体缺陷。 此外，半导体层的表面可以通过抛光处理被抛光和平坦化。

公开(公告)号：US07749804B2

公开(公告)日：2010-07-06

申请号：US12431168

申请日：2009-04-28

申请人： Yoshiharu Hirakata ,  Tetsuji Ishitani ,  Shuji Fukai ,  Ryota Imahayashi

发明人： Yoshiharu Hirakata ,  Tetsuji Ishitani ,  Shuji Fukai ,  Ryota Imahayashi

IPC分类号： H01L51/40

CPC分类号： B82Y10/00 ,  H01L51/0024 ,  H01L51/0034 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0041 ,  H01L51/0051 ,  H01L51/0053 ,  H01L51/0093 ,  H01L51/0545

摘要： It is an object of the present invention to provide a method for manufacturing an inexpensive organic TFT which does not depend on an expensive dedicated device and does not expose an organic semiconductor to atmospheric air. Moreover, it is another object of the present invention to provide a method for manufacturing an organic TFT at low temperature so as not to cause a problem of pyrolyzing a material. In view of the foregoing problems, one feature of the present invention is that a film-like protector which serves as a protective film is provided over an organic semiconductor film. The film-like protector can be formed by being fixed to a film-like support body with an adhesive agent or the like.

摘要翻译： 本发明的目的是提供一种不依赖于昂贵的专用装置并且不将有机半导体暴露于大气中的便宜的有机TFT的制造方法。 此外，本发明的另一个目的是提供一种在低温下制造有机TFT的方法，从而不会引起材料的热解问题。 鉴于上述问题，本发明的一个特征是在有机半导体膜上设置用作保护膜的膜状保护膜。 膜状保护器可以通过用粘合剂等固定到膜状支撑体上而形成。

公开(公告)号：US07671448B2

公开(公告)日：2010-03-02

申请号：US11376198

申请日：2006-03-16

申请人： Shinobu Furukawa ,  Ryota Imahayashi

发明人： Shinobu Furukawa ,  Ryota Imahayashi

IPC分类号： H01L35/24 ,  H01L51/00 ,  H01L29/04 ,  H01L31/036 ,  H01L31/153 ,  H01L29/165

CPC分类号： H01L51/0545 ,  B82Y10/00 ,  H01L27/283 ,  H01L27/3244 ,  H01L51/0046 ,  H01L51/0059 ,  H01L51/0068 ,  H01L51/0078 ,  H01L51/0562

摘要： It is an object of the present invention to form an organic transistor including an organic semiconductor having high crystallinity without loosing an interface between an organic semiconductor of a channel where carriers are spread out and a gate insulating layer and deteriorating a yield. A semiconductor device according to the present invention has a stacked structure of organic semiconductor layers, and at least the upper organic semiconductor layer is in a polycrystalline or a single crystalline state and the lower organic semiconductor layer is made of a material serving as a channel. Carrier mobility can be increased owing to the upper organic semiconductor layer having high crystallinity; thus, insufficient contact due to the upper organic semiconductor layer can be compensated by the lower organic semiconductor layer.

摘要翻译： 本发明的目的是形成具有高结晶度的有机半导体的有机晶体管，而不会失去载流子扩散的沟道的有机半导体与栅极绝缘层之间的界面，从而劣化产率。 根据本发明的半导体器件具有有机半导体层的堆叠结构，并且至少上部有机半导体层处于多晶或单晶状态，下部有机半导体层由用作沟道的材料制成。 由于具有高结晶度的上有机半导体层可以增加载流子迁移率; 因此，通过下部有机半导体层可以补偿由于上部有机半导体层引起的接触不足。