Method of fine patterning semiconductor device
    31.
    发明申请
    Method of fine patterning semiconductor device 有权
    精细图案化半导体器件的方法

    公开(公告)号:US20090246966A1

    公开(公告)日:2009-10-01

    申请号:US12217782

    申请日:2008-07-09

    Abstract: For integrated circuit fabrication, at least one spacer support structure is formed in a first area over a semiconductor substrate, and a mask material is deposited on exposed surfaces of the spacer support structure and on a second area over the semiconductor substrate. A masking structure is formed on a portion of the mask material in the second area, and the mask material is patterned to form spacers on sidewalls of the spacer support structure and to form a mask pattern under the masking structure. The spacer support structure and the masking structure are comprised of respective high carbon content materials that have been spin-coated and have substantially a same etch selectivity.

    Abstract translation: 对于集成电路制造,在半导体衬底上的第一区域中形成至少一个间隔件支撑结构,并且掩模材料沉积在间隔件支撑结构的暴露表面上并在半导体衬底上的第二区域上。 在第二区域中的掩模材料的一部分上形成掩模结构,并且掩模材料被图案化以在间隔物支撑结构的侧壁上形成间隔物,并在掩模结构下方形成掩模图案。 间隔物支撑结构和掩蔽结构由已经旋涂并具有基本上相同蚀刻选择性的相应的高碳含量材料构成。

Patent Agency Ranking