Abstract:
For integrated circuit fabrication, at least one spacer support structure is formed in a first area over a semiconductor substrate, and a mask material is deposited on exposed surfaces of the spacer support structure and on a second area over the semiconductor substrate. A masking structure is formed on a portion of the mask material in the second area, and the mask material is patterned to form spacers on sidewalls of the spacer support structure and to form a mask pattern under the masking structure. The spacer support structure and the masking structure are comprised of respective high carbon content materials that have been spin-coated and have substantially a same etch selectivity.
Abstract:
The present invention provides polymeric films including polymers having an sp3 carbon main frame including a tetrahedral center atom. Methods of forming the same, hard marks including the same and methods of forming fine patterns using the same are also provided.
Abstract translation:本发明提供了聚合物膜,其包括具有包含四面体中心原子的sp 3 O 3碳主框的聚合物。 还提供了形成它们的方法,包括其的硬标记和使用其形成精细图案的方法。
Abstract:
A thinner composition includes propylene glycol ether acetate, methyl 2-hydroxy-2-methyl propionate, and an ester compound such as ethyl lactate, ethyl 3-ethoxy propionate or a mixture thereof.