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    Photoresist stripper compositions
    5.
    发明授权
    Photoresist stripper compositions 失效
    光刻胶剥离剂组合物

    公开(公告)号：US06589719B1

    公开(公告)日：2003-07-08

    申请号：US10116030

    申请日：2002-04-05

    申请人： Seung-Hyun Ahn ,  Sang-Mun Chon ,  Hoe-Sik Chung ,  Mi-Sook Jeon ,  Eun-Mi Bae ,  Baik-Soon Choi ,  Ok-Seok Jang

    发明人： Seung-Hyun Ahn ,  Sang-Mun Chon ,  Hoe-Sik Chung ,  Mi-Sook Jeon ,  Eun-Mi Bae ,  Baik-Soon Choi ,  Ok-Seok Jang

    IPC分类号： G03C742

    CPC分类号： G03F7/168 ,  G03F7/422

    摘要： A photoresist stripper composition is made up of a mixture of an acetic acid ester, &ggr;-butyrolactone (GBL), and a non-acetate ester or a poly alkyl alcohol derivative. The acetic acid ester may be at least one of n-butyl acetate, amyl acetate, ethyl aceto-acetate, and isopropyl acetate. The non-acetate ester may be at least one of ethyl lactate (EL), ethyl-3-ethoxy propionate (EEP) and methyl-3-methoxy (MMP). The poly alkyl alcohol derivative may be at least one of propylene glycol monomethyl ester (PGME) and propylene glycol monomethyl ester acetate (PGMEA).

    摘要翻译： 光致抗蚀剂剥离剂组合物由乙酸酯，γ-丁内酯（GBL）和非乙酸酯或多烷基醇衍生物的混合物组成。 乙酸酯可以是乙酸正丁酯，乙酸戊酯，乙酸乙酯和乙酸异丙酯中的至少一种。 非乙酸酯酯可以是乳酸乙酯（EL），乙基-3-乙氧基丙酸酯（EEP）和甲基-3-甲氧基（MMP）中的至少一种。 聚烷基醇衍生物可以是丙二醇单甲酯（PGME）和丙二醇单甲酯乙酸酯（PGMEA）中的至少一种。

    Etchant used in the manufacture of semiconductor devices and etching method using the same
    8.
    发明授权
    Etchant used in the manufacture of semiconductor devices and etching method using the same 有权

    公开(公告)号：US06613693B1

    公开(公告)日：2003-09-02

    申请号：US09696741

    申请日：2000-10-26

    申请人： Yong-woo Heo ,  Heoung-bin Lim ,  Jun-ing Gil ,  Eun-mi Bae

    发明人： Yong-woo Heo ,  Heoung-bin Lim ,  Jun-ing Gil ,  Eun-mi Bae

    IPC分类号： H01L21302

    CPC分类号： H01L21/31111

    摘要： A nitride film etchant used in the manufacture semiconductor devices, and an etching method using the etchant, are provided. A wafer having a nitride film formed thereon is introduced into a bathing tube containing an etchant which is a water solution containing phosphoric acid (H3PO4) of a concentration of 50-70% by weight and hydrofluoric acid (HF), and the nitride film is etched by the etchant. When the concentration of HF is 0.005 to 0.05% by weight, the etch rate of the nitride film is increased, and the selectivity between the nitride film and an oxide film is kept very high. Also, an etchant containing HF of a concentration of 0.05% by weight is provided as a water solution mixed with H3PO4 and HF. Addition of HF of 0.05% by weight or less increases the etch rate of the nitride film, and a high selectivity of the nitride film with respect to an oxide film is maintained.