公开(公告)号：US20100159842A1

公开(公告)日：2010-06-24

申请号：US12486707

申请日：2009-06-17

Applicant: Takashi FUKAGAWA ,  Hirohito Mukai ,  Yoichi Nakagawa ,  Tadao Inoue

Inventor： Takashi FUKAGAWA ,  Hirohito Mukai ,  Yoichi Nakagawa ,  Tadao Inoue

IPC: H04B17/00

CPC classification number: G01S5/0226 ,  G01S11/02 ,  G01S13/76

Abstract: A wireless distance measurement system and a wireless distance measurement method that measure the distance between a base station and a terminal without clock synchronization between a plurality of base stations, and without requiring input of the position relationships between a plurality of base stations. Clock phase shift section (210) shifts a clock that is used to generate transmission pulses is phase-shifted by a specific amount every 100 nanoseconds, and A/D conversion section (211) converts a signal re-radiated from terminal (103) to a digital signal using the shifted clock. Correlation calculation section (212) performs correlation calculation between the digital signal and the transmission pulse and creates a delay profile by adding digital signals in the shifted phases between same phases, and incoming wave detection section (213) detects peaks of the pulses in the delay profile. Distance calculation section (214) calculates the distance to terminal (103) based on the timings to transmit the pulses and the timings to detect peaks of the pulses.

Abstract translation: 无线距离测量系统和无线距离测量方法，其测量基站和终端之间的距离，而不需要在多个基站之间的位置关系的输入，而不需要在多个基站之间进行时钟同步。 时钟相移部（210）移位用于产生发送脉冲的时钟每100纳秒相移特定量，A / D转换部（211）将从终端（103）重新发射的信号转换为 使用移位时钟的数字信号。 相关计算部（212）进行数字信号与发送脉冲之间的相关运算，并通过在相位相位之间移位移相的数字信号相加产生延迟分布，入射波检测部（213）检测出延迟中的脉冲的峰值 个人资料 距离计算部（214）基于发送脉冲的定时和检测脉冲峰值的定时，计算与终端（103）的距离。

公开(公告)号：US20090207267A1

公开(公告)日：2009-08-20

申请号：US12364915

申请日：2009-02-03

Applicant: Tadao INOUE ,  Hiroshi DAIKU

Inventor： Tadao INOUE ,  Hiroshi DAIKU

IPC: H04N5/228 ,  H04N5/225 ,  H04N5/335

CPC classification number: H01L27/14603 ,  H01L27/14627 ,  H01L27/14685

Abstract: A method for calculating a shift amount of a microlens from a position of a light receiving element arranged in a pixel of an image pickup element is provided. The microlens collects incident light from an image pickup lens. The method comprises: acquiring an incident angle characteristic value indicating a relation between an arranged position of the pixel and an incident angle of the incident light to the pixel; calculating a sampled shift amount of the microlens from the position of the light receiving element corresponding the incident angle characteristic value based on light collection efficiency of the incident light; approximating the sampled shift amount by a second or higher order function to calculate a shift amount characteristic function indicating a relation between the arranged position and the shift amount; and calculating the shift amount of the pixel using the shift amount characteristic function.

Abstract translation: 提供了一种用于从布置在图像拾取元件的像素中的光接收元件的位置计算微透镜的偏移量的方法。 微透镜收集来自图像拾取透镜的入射光。 该方法包括：获取指示像素的布置位置与入射光与像素的入射角之间的关系的入射角特性值; 根据入射角特性值，根据入射光的光收集效率，从受光元件的位置计算微透镜的采样偏移量; 通过第二或更高阶函数近似所述采样偏移量，以计算指示所述布置位置与所述偏移量之间的关系的偏移量特征函数; 以及使用偏移量特征函数来计算像素的偏移量。

公开(公告)号：US20080002043A1

公开(公告)日：2008-01-03

申请号：US11545692

申请日：2006-10-11

Applicant: Tadao Inoue ,  Katsuyoshi Yamamoto

Inventor： Tadao Inoue ,  Katsuyoshi Yamamoto

IPC: H04N3/14 ,  H04N5/335

CPC classification number: H04N5/2353 ,  H04N5/232 ,  H04N5/23245 ,  H04N5/3532 ,  H04N5/3745

Abstract: A solid-state image pickup apparatus comprises a pixel unit consisting of a plurality of pixels; a pixel control unit for controlling the plurality of pixels; a readout unit for reading a signal of each pixel output from the pixel unit; a shutter unit for establishing a state of a light incident to the pixel unit and that of shielding the pixel unit from the light; and a control unit, comprising an exposure mode changeover unit for changing over an exposure mode to either a first exposure mode performing a simultaneous exposure for all pixels or a second exposure mode performing an exposure for each of a predetermined unit of pixels, for controlling the pixel control unit, readout unit and shutter unit according to an exposure mode changed over by the exposure mode changeover unit.

Abstract translation: 固态图像拾取装置包括由多个像素组成的像素单元; 用于控制所述多个像素的像素控制单元; 读取单元，用于读取从像素单元输出的每个像素的信号; 快门单元，用于建立入射到像素单元的光的状态以及屏蔽像素单元与光的状态; 以及控制单元，包括曝光模式切换单元，用于将曝光模式转换为对所有像素执行同时曝光的第一曝光模式或对于每个像素的预定单元执行曝光的第二曝光模式，以控制 像素控制单元，读出单元和快门单元，根据由曝光模式切换单元切换的曝光模式。

公开(公告)号：US07266308B2

公开(公告)日：2007-09-04

申请号：US11203544

申请日：2005-08-15

Applicant: Tadao Inoue ,  Tadashi Ikeuchi ,  Hiroyuki Rokugawa ,  Masaaki Kawai ,  Norio Ueno ,  Norio Murakami ,  Toru Matsuyama ,  Makoto Miki ,  Toshiyuki Takauji

Inventor： Tadao Inoue ,  Tadashi Ikeuchi ,  Hiroyuki Rokugawa ,  Masaaki Kawai ,  Norio Ueno ,  Norio Murakami ,  Toru Matsuyama ,  Makoto Miki ,  Toshiyuki Takauji

IPC: H04B10/04 ,  H04B10/12 ,  H01S3/13

CPC classification number: H01S5/0683 ,  H01S5/06825

Abstract: Using a switching signal from a coarse/fine switching and operation mode switching circuit, the width of change of a counter control value during power up is increased, and the width of change is reduced once a steady state is reached. In the steady state, the frequency of updating is limited by a control signal from an update permit control circuit. In the steady state, the frequency band of a current source in an LD driving circuit is reduced in width.

Abstract translation: 使用来自粗/精切换和动作模式切换电路的切换信号，上电期间的计数器控制值的变化幅度增大，一旦达到稳定状态，则变化幅度减小。 在稳定状态下，更新频率受来自更新许可控制电路的控制信号的限制。 在稳态中，LD驱动电路中的电流源的频带宽度减小。

公开(公告)号：US20060001754A1

公开(公告)日：2006-01-05

申请号：US11001010

申请日：2004-12-02

Applicant: Makoto Yanagisawa ,  Tadao Inoue ,  Jun Funakoshi

Inventor： Makoto Yanagisawa ,  Tadao Inoue ,  Jun Funakoshi

IPC: H04N5/335

CPC classification number: H04N5/3575 ,  H04N5/355 ,  H04N5/3745 ,  H04N5/378

Abstract: A CMOS image sensor of the present invention comprises an array of a picture element circuit, a unit of correlated double sampling one picture element line of the array, a charge pump type voltage up unit of supplying a predetermined step-up voltage to the picture element circuit that forms an array and a prevention unit of preventing the noise caused by a pumping operation of the charge pump type voltage up unit. The prevention unit may be a prohibition unit of prohibiting a pumping operation of the charge pump type voltage up unit. In the case where the charge pump type voltage up unit comprises a voltage up circuit for assigning a voltage up output in accordance with an assigned clock and a clock generation circuit for generating a clock in such a way that the voltage up output matches with the predetermined upped voltage, the prohibition unit of prohibiting a pumping operation may comprise a not-assignment unit of not assigning an output of the clock generation unit to the voltage up circuit.

Abstract translation: 本发明的CMOS图像传感器包括像素电路阵列，阵列的相关双采样一个像素线的单元，向图像元件提供预定的升压电压的电荷泵型升压单元 电路，其形成阵列和防止单元，以防止由电荷泵型升压单元的泵送操作引起的噪声。 防止单元可以是禁止电荷泵型升压单元的泵送操作的禁止单元。 在电荷泵型升压单元包括用于根据分配的时钟分配电压上升输出的升压电路和用于产生时钟的时钟产生电路的情况下，使得升压输出与预定的时间相匹配 禁止上升电压的禁止单元可以包括不将时钟发生单元的输出分配给升压电路的未分配单元。

公开(公告)号：US20050264664A1

公开(公告)日：2005-12-01

申请号：US10946060

申请日：2004-09-22

Applicant: Makoto Yanagisawa ,  Tadao Inoue ,  Katsuyoshi Yamamoto

Inventor： Makoto Yanagisawa ,  Tadao Inoue ,  Katsuyoshi Yamamoto

IPC: H01L27/146 ,  H04N5/335 ,  H04N5/357 ,  H04N5/363 ,  H04N5/374 ,  H04N5/376

CPC classification number: H04N5/3742 ,  H04N5/3577

Abstract: A shift register outputs a selection signal for selection of a horizontal sequence of pixels of a two-dimensional pixel array, and includes a vertical shift register for applying a selection signal to the pixel array from either the outer left side or the outer right side of the pixel array, and a voltage applying device for applying a power supply voltage for reading data for a horizontal sequence of pixels from an opposite side of a supply of the selection signal to the pixel array after the selection signal is output.

Abstract translation: 移位寄存器输出用于选择二维像素阵列的水平的像素序列的选择信号，并且包括垂直移位寄存器，用于从第一像素阵列的左外侧或外侧右侧的像素阵列施加选择信号 所述像素阵列和电压施加装置，用于在输出所述选择信号之后，从所述选择信号的电源的相对侧向所述像素阵列施加用于将水平像素序列的数据读取的电源电压。

公开(公告)号：US5914622A

公开(公告)日：1999-06-22

申请号：US869758

申请日：1997-06-05

Applicant: Tadao Inoue

Inventor： Tadao Inoue

IPC: H03K5/04 ,  G11B7/125 ,  H03K7/08 ,  H03K3/00 ,  G05F1/10

CPC classification number: G11B7/126 ,  H03K7/08

Abstract: There is disclosed a pulse-width controller which includes a first pulse-width adjusting section which adjusts the pulse width of a main pulse signal, a second pulse-width adjusting section which adjusts the pulse width of a reference pulse signal, a pulse-width measurement section which measures the pulse width of the reference pulse signal adjusted by the second pulse-width adjusting section, a target pulse-width setting section for setting a target pulse width to be achieved by the first pulse-width adjusting section, and a control section which outputs to the first pulse-width adjusting section a control signal for use in adjusting the pulse width of the main pulse signal in the first pulse-width adjusting section, on the basis of pulse-width information regarding the reference pulse signal measured in the pulse-width measurement section and the target pulse-width information set by the target pulse-width setting section. It becomes possible to precisely control a pulse width without being affected by the ambient state at the time of pulse-width control operations.

Abstract translation: 公开了一种脉冲宽度控制器，其包括调整主脉冲信号的脉冲宽度的第一脉冲宽度调整部，调整基准脉冲信号的脉冲宽度的第二脉冲宽度调整部，脉冲宽度 测量部分，其测量由第二脉冲宽度调节部分调整的参考脉冲信号的脉冲宽度;目标脉冲宽度设置部分，用于设置由第一脉冲宽度调节部分实现的目标脉冲宽度;以及控制 基于与所测量的参考脉冲信号有关的脉冲宽度信息，向第一脉冲宽度调整部分输出用于调整第一脉冲宽度调节部分中的主脉冲信号的脉冲宽度的控制信号的部分， 脉冲宽度测量部分和由目标脉冲宽度设置部分设置的目标脉冲宽度信息。 可以在脉冲宽度控制操作时精确地控制脉冲宽度而不受环境状态的影响。

公开(公告)号：US4351021A

公开(公告)日：1982-09-21

申请号：US235633

申请日：1981-02-18

Applicant: Mitsuo Morihisa ,  Tadao Inoue

Inventor： Mitsuo Morihisa ,  Tadao Inoue

IPC: H03K17/22 ,  G06F1/24 ,  G06F1/26 ,  H02M3/156 ,  H02M7/02

CPC classification number: H02M3/156 ,  Y10S323/901

Abstract: A power supply circuit includes a rectifier for converting an alternating voltage to a DC voltage for driving a single chip LSI microcomputer control system in, for example, a microwave oven. A switching circuit is included in the power supply circuit for developing an output DC voltage only after the DC voltage derived from the rectifier reaches a preselected level. The switching circuit includes large current transistors connected in the Darlington fashion, whereby the power supply circuit develops the output DC voltage with a short leading transient period which is required for developing an auto-clear signal in the single chip LSI microcomputer control system.

Abstract translation: 电源电路包括用于将交流电压转换为用于驱动例如微波炉中的单芯片LSI微计算机控制系统的直流电压的整流器。 只有在从整流器得到的直流电压达到预定电平之后，开关电路才包含在用于产生输出直流电压的电源电路中。 开关电路包括以达林顿方式连接的大电流晶体管，由此在单芯片LSI微机控制系统中，供电电路以短的前导暂态时间开发自动清除信号所需的输出直流电压。

公开(公告)号：US07964902B2

公开(公告)日：2011-06-21

申请号：US11861691

申请日：2007-09-26

Applicant: Tadao Inoue ,  Katsuyoshi Yamamoto ,  Hiroshi Kobayashi

Inventor： Tadao Inoue ,  Katsuyoshi Yamamoto ,  Hiroshi Kobayashi

IPC: H01L31/062

CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14645 ,  H01L31/03529 ,  H04N5/361 ,  Y02E10/50

Abstract: First diffusion region constituting a photodiode in each pixel stores carriers generated according to incident light. Second diffusion region is formed at a surface of the first diffusion region to cover a peripheral part of the first diffusion region. In the peripheral part of the first diffusion region, crystal defects tend to occur by a process of forming an isolation region and a gate electrode, so that dark current noise tends to occur. The second diffusion region functioning as a protection layer prevents crystal defects in a manufacturing process. The second diffusion region isn't formed on a center of the surface of the first diffusion region where crystal defects don't tend to occur. In the first diffusion region where the second diffusion region isn't formed, the thickness of a depletion layer increases, which improves light detection sensitivity. This improves detection sensitivity of the photodiode without increasing the dark current noise.

Abstract translation: 在每个像素中构成光电二极管的第一扩散区域存储根据入射光生成的载流子。 第二扩散区域形成在第一扩散区域的表面以覆盖第一扩散区域的周边部分。 在第一扩散区域的外围部分中，通过形成隔离区域和栅极电极的过程倾向于发生晶体缺陷，从而趋于产生暗电流噪声。 用作保护层的第二扩散区防止制造过程中的晶体缺陷。 第二扩散区域不形成在不易发生结晶缺陷的第一扩散区域的表面的中心。 在没有形成第二扩散区域的第一扩散区域中，耗尽层的厚度增加，这提高了光检测灵敏度。 这可以提高光电二极管的检测灵敏度，而不会增加暗电流噪声。

公开(公告)号：US20080001192A1

公开(公告)日：2008-01-03

申请号：US11852663

申请日：2007-09-10

Applicant: Tadao INOUE ,  Katsuyoshi YAMAMOTO ,  Narumi OHKAWA

Inventor： Tadao INOUE ,  Katsuyoshi YAMAMOTO ,  Narumi OHKAWA

IPC: H01L31/113 ,  H01L31/062

CPC classification number: H04N5/37457 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14641 ,  H01L27/14647 ,  H01L27/14652 ,  H01L27/14689

Abstract: A CMOS image sensor with an effectively increased aperture ratio and moreover with improved optical sensitivity, and a method of manufacture of such a CMOS image sensor is provided a first aspect of the invention is an image sensor, has a pixel region 10 in which are formed a plurality of pixels each having at least a photodiode, a reset transistor, and a source-follower transistor; and a peripheral circuit region 12 in which are formed peripheral circuits which process read-out signals read out from the pixel region, a well region PW2 in the pixel region PW1 is formed to be more shallow than a well region in the peripheral circuit region. Also, reset transistors or source-follower transistors are formed in the shallow well region PW2 of the pixel region 10, and a photodiode region PHD2 is embedded below the transistor well region PW2.

Abstract translation: 提供了一种具有有效提高孔径比并且还具有改善的光学灵敏度的CMOS图像传感器以及这种CMOS图像传感器的制造方法本发明的第一方面是一种图像传感器，其具有形成有像素区域10 每个具有至少一个光电二极管，复位晶体管和源极 - 跟随器晶体管的多个像素; 以及外围电路区域12，其形成有处理从像素区域读出的读出信号的外围电路，像素区域PW1中的阱区域PW2形成为比外围电路中的阱区域浅 地区。 此外，在像素区域10的浅阱区PW2中形成复位晶体管或源极跟随器晶体管，并且将光电二极管区域PHD 2嵌入晶体管阱区PW2的下方。