公开(公告)号：US06987429B2

公开(公告)日：2006-01-17

申请号：US10038459

申请日：2002-01-07

申请人： Yi-Chi Shih ,  Long Q. Bui ,  Tsuneo Shishido

发明人： Yi-Chi Shih ,  Long Q. Bui ,  Tsuneo Shishido

IPC分类号： H01P5/103

CPC分类号： H01P11/00 ,  Y10S29/016 ,  Y10T29/49016 ,  Y10T29/49018 ,  Y10T29/49052 ,  Y10T29/49064

摘要： A precision non-symmetrical L-shape waveguide end-launching probe for launching microwave signals in both vertical and horizontal polarizations is disclosed. The L-shape waveguide probe is in a form of thin plate, has a first arm and a second arm, and is precisely fabricated and attached to one end of the central metal pin of a feedthrough. The feedthrough is installed to an aperture formed in a major wall of the universal conductive housing to achieve hermetic sealing. The L-shape waveguide probe is aligned by means of a specially designed alignment tool so that long axis of the second arm is always perpendicular to the broad walls of the output waveguide, which is mounted to the universal housing with the broad walls of the output waveguide either horizontally or vertically. Hence, in this invention, an end-launching arrangement using the L-shape probes that could yield a flexible waveguide interface either in horizontal polarization or vertical polarization is provided. The impedance matching and frequency bandwidth may be adjusted by controlling dimensions and positions of the L-shape probe. A plurality of the thin plate L-shape waveguide probes is fabricated by a micro lithography and etching method to ensure reproducibility and reliability. By incorporating with an impedance transformation section having a slot, broad band performance is achieved using the L-shape waveguide probe.

公开(公告)号：US06949985B2

公开(公告)日：2005-09-27

申请号：US10629162

申请日：2003-07-30

申请人： Cindy Xing Qiu ,  Chunong Qiu ,  Yi-Chi Shih

发明人： Cindy Xing Qiu ,  Chunong Qiu ,  Yi-Chi Shih

IPC分类号： H01P1/12 ,  H01P1/10 ,  H01P5/12

CPC分类号： H01P1/127

摘要： As the basic building block of microwave and millimeter wave units and circuits, the microwave switch must fulfill several requirements including low insertion loss, high isolation and small dimensions. For conventional electrostatically actuated microwave MEMS switches, the isolation between DC and RF is achieved using an RF choke. In this invention, a miniature electrostatically actuated microwave switch with a cantilever and employing two resistive lines on a first substrate and act as the actuation electrodes is provided. The resistive lines as the actuation electrodes according to this invention allows one to minimize the switch dimensions, to facilitate the integration and minimize the interference of the propagating microwave or millimeter wave signals. Another feature of this invention is a miniature electrostatically actuated microwave switch with a cantilever and employing two resistive lines as actuation electrodes on a first substrate, and a third resistive line on a second substrate for the de-actuation of the cantilever.

公开(公告)号：US06310526B1

公开(公告)日：2001-10-30

申请号：US09400256

申请日：1999-09-21

申请人： Lap-Sum Yip ,  Cindy Xing Qiu ,  Yi-Chi Shih

发明人： Lap-Sum Yip ,  Cindy Xing Qiu ,  Yi-Chi Shih

IPC分类号： H01H5700

CPC分类号： H01H50/005 ,  H01H2050/007

摘要： Miniature double-throw microwave switches are disclosed in this invention. In one embodiment a miniature double-throw electromagnetic switch for microstrip transmission lines is provided. A cantilever, which forms a part of an input transmission line, with a permanent magnetic film can be pulled down or pushed up by an applied magnetic field to make electrical contact with either one of two output transmission lines. The applied magnetic field is generated by applying a positive or negative current to a miniature electromagnetic coil mounted under the cantilevers. In another embodiment, a miniature double-throw microwave switch with two cantilevers attached to the input transmission line is disclosed for microstrip transmission lines. The magnetic polarizations of the permanent magnetic films on the two cantilevers are controlled in such a way that when a magnetic field is applied, one cantilever will be pulled downward to make electrical contact to a first output transmission line. When a reverse magnetic field is applied, the second cantilever will be pulled downward to make electrical contact to a second output transmission line. Yet another embodiment of this invention is a multilayer thin film electromagnetic coil where the magnetic fields induced in all layers of the coils aligned in the same direction to form a strong magnetic field with reduced power consumption.

摘要翻译： 在本发明中公开了微型双掷微波开关。 在一个实施例中，提供了用于微带传输线的微型双掷电磁开关。 形成输入传输线的永久磁性膜的一部分的悬臂可以被施加的磁场下拉或向上推，以与两个输出传输线中的任一个电接触。 施加的磁场是通过将正或负电流施加到安装在悬臂下方的微型电磁线圈来产生的。 在另一个实施例中，微带传输线公开了一种具有连接到输入传输线的两个悬臂的微型双掷微波开关。 两个悬臂上的永久磁性膜的磁极化被控制成使得当施加磁场时，一个悬臂将被向下拉以与第一输出传输线电接触。 当施加反向磁场时，第二悬臂将被向下拉以与第二输出传输线电接触。 本发明的另一个实施例是多层薄膜电磁线圈，其中线圈的所有层中感应的磁场在相同方向上排列以形成具有降低的功耗的强磁场。

公开(公告)号：US6016092A

公开(公告)日：2000-01-18

申请号：US131594

申请日：1998-08-10

申请人： Cindy Xing Qiu ,  Yi-Chi Shih ,  Lap Sum Yip

发明人： Cindy Xing Qiu ,  Yi-Chi Shih ,  Lap Sum Yip

IPC分类号： H01H50/00 ,  H01P1/12 ,  H01P1/10

CPC分类号： H01P1/127 ,  H01H50/005

摘要： Methods for the fabrication of miniature electromagnetic microwave switches are disclosed in this invention. In one embodiment, on a dielectric substrate, miniature electromagnetic switches for coplanar waveguide transmission lines are fabricated. In another embodiment, miniature electromagnetic microwave switches are fabricated for microstrip transmission lines. The miniature microwave switches are built on a dielectric substrate and are accompanied by miniature electromagnetic coils on the back of the substrate. The switch is controlled by regulating the dc current applied to the electromagnetic coil. A switch is ON when a dc controlling current is applied to the electromagnetic coil and is OFF when the controlling current is cut off. A reverse dc current may also be applied to the electromagnetic coil to repel the top electrode from the bottom electrode. The use of reverse current will prevent the possible sticking of the two electrodes, thus, reducing the switching time. For the switch described in the second embodiment, the miniature electromagnetic coils are separated from the signal lines by a grounding metal layer fabricated at the back of the substrate. In yet another embodiment, switches with two planar electrodes separated by a gap and a third element, a cantilever, are built on a dielectric substrate. Under the influence of a magnetic force, the cantilever will move downwards so that the two separated electrodes are connected.

摘要翻译： 在本发明中公开了微型电磁微波开关的制造方法。 在一个实施例中，在电介质基板上制造用于共面波导传输线的微型电磁开关。 在另一个实施例中，为微带传输线制造微型电磁微波开关。 微型微波开关构建在电介质基板上，并伴随着基板背面的微型电磁线圈。 通过调节施加到电磁线圈的直流电流来控制开关。 当直流控制电流施加到电磁线圈时，开关接通，并且当控制电流被切断时，开关为断开。 也可以向电磁线圈施加反向直流电流以从底部电极排斥顶部电极。 使用反向电流将防止两个电极可能的粘附，从而减少开关时间。 对于第二实施例中描述的开关，微型电磁线圈通过在基板背面制造的接地金属层与信号线分离。 在另一个实施例中，在电介质基板上建立具有由间隙分开的两个平面电极和第三元件悬臂的开关。 在磁力的影响下，悬臂将向下移动，使得两个分开的电极连接。

公开(公告)号：US09799686B2

公开(公告)日：2017-10-24

申请号：US13987832

申请日：2013-09-09

申请人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Yi-Chi Shih

发明人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Yi-Chi Shih

IPC分类号： H01L27/13 ,  H01L21/84 ,  H01L27/12 ,  H01L29/423 ,  H01L21/02 ,  H01L21/4757 ,  H01L21/4763 ,  H01L49/02 ,  H01L29/24 ,  H01L29/66

CPC分类号： H01L27/1259 ,  H01L21/02565 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/20 ,  H01L28/40 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/66969

摘要： MMIC circuits with thin film transistors are provided without the need of grinding and etching of the substrate after the fabrication of active and passive components. Furthermore, technology for active devices based on non-toxic compound semiconductors is provided. The success in the MMIC methods and structures without substrate grinding/etching and the use of semiconductors without toxic elements for active components will reduce manufacturing time, decrease economic cost and environmental burden. MMIC structures are provided where the requirements for die or chip attachment, alignment and wire bonding are eliminated completely or minimized. This will increase the reproducibility and reduce the manufacturing time for the MMIC circuits and modules.

公开(公告)号：US20160225915A1

公开(公告)日：2016-08-04

申请号：US14544652

申请日：2015-01-30

申请人： Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Ishiang Shih ,  Chunong Qiu ,  Julia Qiu

发明人： Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Ishiang Shih ,  Chunong Qiu ,  Julia Qiu

IPC分类号： H01L29/786 ,  H01L29/49 ,  H01L29/423 ,  H01L29/24

CPC分类号： H01L29/78696 ,  H01L29/1054 ,  H01L29/24 ,  H01L29/423 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/4908 ,  H01L29/78609 ,  H01L29/7869

摘要： Transistors with a first metal oxynitride channel layer and a second metal oxynitride barrier layer are provided. The first metal oxynitride channel layer is lightly doped or without intentional doping to achieve high carrier mobility. Impurity atoms are introduced into the second metal oxynitride barrier layer and the donated carriers migrate or drift into the first metal oxynitride channel layer to effect high mobility conduction between source and drain.

摘要翻译： 提供具有第一金属氧氮化物沟道层和第二金属氮氧化物阻挡层的晶体管。 第一金属氧氮化物沟道层被轻掺杂或没有有意掺杂以实现高载流子迁移率。 杂质原子被引入到第二金属氧氮化物阻挡层中，并且所捐赠的载流子迁移或漂移到第一金属氧氮化物沟道层中以实现源极和漏极之间的高迁移率传导。

公开(公告)号：US09324884B1

公开(公告)日：2016-04-26

申请号：US14544752

申请日：2015-02-12

申请人： Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Ishiang Shih ,  Chunong Qiu ,  Julia Qiu

发明人： Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Ishiang Shih ,  Chunong Qiu ,  Julia Qiu

IPC分类号： H01L29/51 ,  H01L29/861 ,  H01L29/24 ,  H01L29/45 ,  H01L29/06 ,  H01L23/31 ,  H01L23/29

CPC分类号： H01L29/861 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66969 ,  H01L2924/0002 ,  H01L2924/00

摘要： Metal oxynitride diodes having at least a first metal oxynitride layer of a first conduction type and a second metal oxynitride layer of a second conduction type are provided. The first oxynitride layer is selectively doped or un-intentionally doped and have high carrier mobility. The second oxynitride layer is also selectively doped or un-intentionally doped and have high carrier mobility. A compensated oxynitride drift layer having a low carrier density may be adopted to increase the breakdown voltage of the device.

摘要翻译： 提供具有至少第一导电类型的第一金属氧氮化物层和第二导电类型的第二金属氧氮化物层的金属氧氮化物二极管。 第一氧氮化物层是选择性掺杂的或非有意掺杂的并且具有高载流子迁移率。 第二氧氮化物层也是选择性掺杂或非有意掺杂的并且具有高载流子迁移率。 可以采用具有低载流子密度的补偿氮氧化物漂移层来增加器件的击穿电压。

公开(公告)号：US20150263116A1

公开(公告)日：2015-09-17

申请号：US13999623

申请日：2014-03-14

申请人： Chunong Qiu ,  Jay-Hsing Wu ,  Cindy X. Qiu ,  Yi-Chi Shih ,  Ishiang Shih

发明人： Chunong Qiu ,  Jay-Hsing Wu ,  Cindy X. Qiu ,  Yi-Chi Shih ,  Ishiang Shih

IPC分类号： H01L29/423 ,  H01L29/778

CPC分类号： H01L29/7783 ,  H01L21/28581 ,  H01L21/28587 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/475

摘要： The present invention is related to high electron mobility transistors for power switching and microwave amplification and switching. More specifically, it related to a high electron mobility transistor with an improved gate to enhance the performance. When fabricating a high electron mobility thin film transistors, a first gate metal layer made of chromium alloy or tungsten alloy is deposited to reduce surface traps and to enhance the stability and integrity of the gates.

摘要翻译： 本发明涉及用于功率开关和微波放大和切换的高电子迁移率晶体管。 更具体地，它涉及具有改进的栅极以提高性能的高电子迁移率晶体管。 当制造高电子迁移率薄膜晶体管时，沉积由铬合金或钨合金制成的第一栅极金属层以减少表面陷阱并提高栅极的稳定性和完整性。

公开(公告)号：US20150069514A1

公开(公告)日：2015-03-12

申请号：US13987832

申请日：2013-09-09

申请人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Yi-Chi Shih

发明人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Yi-Chi Shih

IPC分类号： H01L27/13 ,  H01L21/84

CPC分类号： H01L27/1259 ,  H01L21/02565 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/20 ,  H01L28/40 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/66969

摘要： MMIC circuits with thin film transistors are provided without the need of grinding and etching of the substrate after the fabrication of active and passive components. Furthermore, technology for active devices based on non-toxic compound semiconductors is provided. The success in the MMIC methods and structures without substrate grinding/etching and the use of semiconductors without toxic elements for active components will reduce manufacturing time, decrease economic cost and environmental burden. MMIC structures are provided where the requirements for die or chip attachment, alignment and wire bonding are eliminated completely or minimized. This will increase the reproducibility and reduce the manufacturing time for the MMIC circuits and modules.

摘要翻译： 提供具有薄膜晶体管的MMIC电路，而不需要在制作有源和无源部件之后对衬底进行研磨和蚀刻。 此外，还提供了基于无毒化合物半导体的有源器件技术。 无衬底研磨/蚀刻的MMIC方法和结构的成功以及无活性组分的无毒元素的半导体的使用将减少制造时间，降低经济成本和环境负担。 提供了MMIC结构，其中对芯片或芯片附接，对准和引线键合的要求被完全消除或最小化。 这将增加MMIC电路和模块的再现性并缩短制造时间。

公开(公告)号：US20110180850A1

公开(公告)日：2011-07-28

申请号：US12657602

申请日：2010-01-25

申请人： Ishiang Shih ,  Chunong Qiu ,  Cindy X. Qui ,  Yi-Chi Shih

发明人： Ishiang Shih ,  Chunong Qiu ,  Cindy X. Qui ,  Yi-Chi Shih

IPC分类号： H01L29/772 ,  H01L21/335

CPC分类号： H01L21/0331 ,  H01L29/42316

摘要： The present invention provides methods for fabricating devices with low resistance structures involving a lift-off process. A radiation blocking layer is introduced between two resist layers in order to prevent intermixing of the photoresists. Cavities suitable for the formation of low resistance T-gates or L-gates can be obtained by a first exposure, developing, selective etching of blocking layer and a second exposure and developing. In another embodiment, a low resistance gate structure with pillars to enhance mechanical stability or strength is provided.

摘要翻译： 本发明提供了用于制造涉及剥离过程的具有低电阻结构的器件的方法。 在两个抗蚀剂层之间引入辐射阻挡层，以防止光致抗蚀剂的混合。 可以通过第一次曝光，显影，选择性蚀刻阻挡层和第二曝光和显影来获得适于形成低电阻T形栅极或L-栅极的腔体。 在另一个实施例中，提供了具有柱以提高机械稳定性或强度的低电阻门结构。