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公开(公告)号:US11465225B1
公开(公告)日:2022-10-11
申请号:US17692760
申请日:2022-03-11
Applicant: Yield Engineering Systems, Inc.
Inventor: Lei Jing , M Ziaul Karim , Kenneth Sautter , Kang Song
IPC: B23K1/015 , B23K1/008 , B23K3/08 , H01L23/00 , B23K101/42 , B23K101/40 , B23K1/012 , H01L21/60 , B23K1/00
Abstract: A method of using a solder reflow oven can include disposing at least one substrate including solder in a chamber of the oven. The method can include decreasing a pressure of the chamber to a first pressure between about 0.1-50 Torr. After decreasing the pressure of the chamber, the temperature of the at least one substrate can be increased to a first temperature. Formic acid vapor can be admitted into the chamber above the at least one substrate while nitrogen is discharged into the chamber below the at least one substrate. The method can also include removing at least a portion of the formic acid vapor from the enclosure. After the removing step, the temperature of the at least one substrate can be further increased to a second temperature higher than the first temperature. The at least one substrate can be maintained at the second temperature for a first time. And then, the at least one substrate can be cooled.
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公开(公告)号:US11456274B1
公开(公告)日:2022-09-27
申请号:US17686514
申请日:2022-03-04
Applicant: Yield Engineering Systems, Inc.
Inventor: M Ziaul Karim , Lei Jing , Kenneth Sautter
IPC: H01L23/00 , B23K1/008 , B23K37/04 , B23K101/40 , B23K101/42 , B23K1/015 , B23K1/012 , B23K1/00
Abstract: A method of using an oven includes supporting a substrate on a rotatable spindle in a processing chamber of the oven and rotating the substrate. The method may also include raising the spindle with the substrate to a heating zone and activating a lamp assembly to heat a top surface of the substrate. The substrate may then be lowered to a dosing zone and a chemical vapor directed into the processing chamber above the substrate. The substrate may then be further heated using the lamp assembly and cooled.
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公开(公告)号:US20220189809A1
公开(公告)日:2022-06-16
申请号:US17218697
申请日:2021-03-31
Applicant: Yield Engineering Systems, Inc.
Inventor: Mark William Curry , Ronald R. Stevens , Craig W. McCoy , Charudatta Galande , Gabriel Ormonde
IPC: H01L21/677
Abstract: A batch processing oven comprising a processing chamber and a rack configured to be positioned in the processing chamber. The rack is configured to support a plurality of substrates and a plurality of panels in a stacked manner such that one or more substrates of the plurality of substrates are positioned between at least one pair of adjacent panels of the plurality panels. Vertical gaps separate each substrate of the one or more substrates from an adjacent substrate or panel on either side of the substrate.
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公开(公告)号:US20190287835A1
公开(公告)日:2019-09-19
申请号:US16263953
申请日:2019-01-31
Applicant: YIELD ENGINEERING SYSTEMS, INC.
Inventor: WILLIAM MOFFAT , CRAIG WALTER MCCOY
IPC: H01L21/68 , H01J37/32 , H01L21/687
Abstract: A device and method for alignment of substrates on a substrate support, such as a heated chuck. An alignment ring may be placed over the substrate support to maintain placement and alignment during processing, such as plasma processing. The aligned substrate may then be accessed by a robotic arm, as it is in a pre-determined location. Alignment rings of different interior diameters may be used for different substrate sizes. The alignment rings may be inserted onto and removed from the process oven containing the substrate support through the substrate access port, without the need to fully open the process chamber.
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公开(公告)号:US10319612B2
公开(公告)日:2019-06-11
申请号:US16174260
申请日:2018-10-29
Applicant: YIELD ENGINEERING SYSTEMS, INC.
Inventor: William Moffat
Abstract: A process for the drying, and subsequent imidization, of polyimide precursors which minimizes or eliminates voids and which minimizes or eliminates discoloration. The process uses a sequential set of descending pressure operations that allow for time efficient processing of wafers. The set of descending pressure operations are interspersed with evacuation processes using heated gasses, which combine heating and byproduct evacuation. The process results in layers with reduced or eliminated voiding, discoloration, and solvent retention.
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公开(公告)号:US20170213748A1
公开(公告)日:2017-07-27
申请号:US15206318
申请日:2016-07-11
Applicant: YIELD ENGINEERING SYSTEMS, INC.
Inventor: WILLIAM MOFFAT
CPC classification number: H01L21/67034 , B32B27/281 , B32B2250/24 , B32B2274/00
Abstract: A process for the drying, and subsequent imidization, of polyimide precursors which minimizes or eliminates voids and which minimizes or eliminates discoloration. The process uses a sequential set of descending pressure operations that allow for time efficient processing of wafers. The set of descending pressure operations are interspersed with evacuation processes using heated gasses, which combine heating and byproduct evacuation. The process results in layers with reduced or eliminated voiding, discoloration, and solvent retention.
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公开(公告)号:US12138745B2
公开(公告)日:2024-11-12
申请号:US18124871
申请日:2023-03-22
Applicant: Yield Engineering Systems, Inc.
Inventor: M Ziaul Karim , Dragan Cekic
Abstract: A method of removing a coating from a substrate comprises positioning a nozzle of an apparatus such that a longitudinal axis of a distal end of the nozzle is inclined at an angle θ with a coated surface of the substrate. The nozzle including an inner conduit having an orifice and an outer conduit coaxially arranged about the inner conduit and defining an annular opening between the inner and outer conduits. Directing a liquid stream through the orifice toward the coated surface and directing a gas flow through the annular opening such that the gas flow surrounds the liquid stream, and impinging the liquid stream on the coated surface.
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公开(公告)号:US20240234198A1
公开(公告)日:2024-07-11
申请号:US18095726
申请日:2023-01-11
Applicant: Yield Engineering Systems, Inc.
Inventor: Greg Pizzo , Angelo-Jose Banzon , Alan Lee Stone , Jed Hsu , Joseph Brett
IPC: H01L21/687 , H01L21/3065 , H01L21/67
CPC classification number: H01L21/6875 , H01L21/3065 , H01L21/67115 , H01L21/67248 , H01L21/68728
Abstract: A substrate handling device may include a central hub configured to coupled to a rotatable shaft that extends along a central axis of a process chamber. The rotatable shaft may be configured to rotate in the process chamber about the central axis and translate in the process chamber along the central axis. A plurality of radially extending arms may be configured to removably coupled to the central hub. The substrate handling device may include a plurality of substrate supports removably coupled to the plurality of arms and configured to support the substrate. The substrate handling device may also include a plurality of end retainers removably coupled to the plurality of arms.
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公开(公告)号:US20240153793A1
公开(公告)日:2024-05-09
申请号:US18053980
申请日:2022-11-09
Applicant: Yield Engineering Systems, Inc.
Inventor: Craig W McCoy , Greg Pizzo , Christopher Lane
CPC classification number: H01L21/67103 , F24C3/087 , F24C15/102 , H05B3/26
Abstract: A heating unit includes a base plate and a cover plate. A passage extends through base plate such that a conduit is defined between base plate and cover plate. A first set of heaters is disposed on a side of base plate opposite passage and a second set of heaters is disposed on a side of cover plate opposite passage.
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公开(公告)号:US20240066618A1
公开(公告)日:2024-02-29
申请号:US18387093
申请日:2023-11-06
Applicant: Yield Engineering Systems, Inc.
Inventor: Lei Jing , M Ziaul Karim , Kenneth Sautter , Kang Song
CPC classification number: B23K1/015 , B23K1/008 , B23K3/085 , H01L24/742 , H01L24/75 , B23K2101/42
Abstract: A method of using a processing oven may include disposing at least one substrate in a chamber of the oven and activating a lamp assembly disposed above them to increase their temperature to a first temperature. A chemical vapor may be admitted into the chamber above the at least one substrate and an inert gas may be admitted into the chamber below the at least one substrate. The temperature of the at least one substrate may then be increased to a second temperature higher than the first temperature and then cooled down.
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