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    Electrolytic treatment of waste water
    31.
    发明授权
    Electrolytic treatment of waste water 失效
    废水电解处理

    公开(公告)号：US4014766A

    公开(公告)日：1977-03-29

    申请号：US625099

    申请日：1975-10-23

    Applicant: Yoshihisa Watanabe ,  Naohiro Nojiri

    Inventor： Yoshihisa Watanabe ,  Naohiro Nojiri

    IPC: C02F1/461 ,  C02F1/463 ,  C02F1/48 ,  C02F1/72 ,  C02C5/12 ,  C25C1/10

    CPC classification number: C02F1/488 ,  C02F1/46114 ,  C02F1/463 ,  C02F1/72 ,  C02F2101/22

    Abstract: Waste water is subjected to electrolysis in an electrolytic cell having an anode comprising an insoluble central electrode and a body of particulate iron pieces disposed therearound and in electrical contact therewith, whereby impurities in the waste water become occluded within a floc of iron hydroxide formed by electrolytic dissolution of the iron pieces, and the floc containing the impurities is subjected to oxidation processing and is thereafter separated. A magnetic field can be applied to the waste water thus treated thereby to promote sedimentation of the floc.

    Abstract translation: 废水在具有阳极的电解槽中进行电解，该阳极包含不溶性中心电极和设置在其周围并与其电接触的颗粒状铁屑体，由此废水中的杂质被吸收在由电解质形成的氢氧化铁絮凝物中 将铁片和含有杂质的絮状体的溶解进行氧化处理，然后分离。 可以对这样处理的废水施加磁场，从而促进絮凝物的沉降。

    Image forming apparatus and image forming method
    34.
    发明授权
    Image forming apparatus and image forming method 有权
    图像形成装置及图像形成方法

    公开(公告)号：US08374518B2

    公开(公告)日：2013-02-12

    申请号：US12790116

    申请日：2010-05-28

    Applicant: Yoshihisa Watanabe

    Inventor： Yoshihisa Watanabe

    IPC: G03G15/00 ,  G03G15/16 ,  G03G15/01 ,  G03G15/20

    CPC classification number: G03G15/1605 ,  G03G15/1675 ,  G03G2215/0129

    Abstract: An image forming apparatus includes a receiver to receive image information from an external device, a movable intermediate transfer member, a plurality of latent image bearing members on which a latent image is formed based on the image information, a plurality of developing devices, each of which disposed in proximity to the latent image baring member, to develop the latent image on the latent image bearing member with toner to form a toner image thereon, a transfer bias application mechanism to apply a transfer bias to the intermediate transfer member and halt temporarily and periodically application of the transfer bias in a continuous output mode in which a plurality of images are continuously formed on different recording media sheets based on the image information of the plurality of images received continuously by the receiver, and a secondary transfer member to transfer the superimposed toner image onto a recording medium.

    Abstract translation: 图像形成装置包括从外部装置接收图像信息的接收器，可移动中间转印部件，基于图像信息形成有潜像的多个潜像承载部件，多个显影装置， 其设置在潜像保护构件附近，以通过调色剂在潜像承载部件上显影以在其上形成调色剂图像;转印偏压施加机构，用于向中间转印部件施加转印偏压并暂时停止; 基于由接收器连续接收的多个图像的图像信息，在连续输出模式中周期性地施加转印偏压，其中多个图像被连续地形成在不同的记录介质片上，以及二次转印部件， 调色剂图像到记录介质上。

    BELT UNIT AND IMAGE FORMING APPARATUS EMPLOYING SAME
    35.
    发明申请
    BELT UNIT AND IMAGE FORMING APPARATUS EMPLOYING SAME 有权
    皮带单元和使用其的图像形成装置

    公开(公告)号：US20120148300A1

    公开(公告)日：2012-06-14

    申请号：US13312596

    申请日：2011-12-06

    Applicant: Tsutomu Katoh ,  Yohhei Watanabe ,  Yuji Kato ,  Yoshihisa Watanabe ,  Hajime Teraji ,  Arinobu Yoshiura

    Inventor： Tsutomu Katoh ,  Yohhei Watanabe ,  Yuji Kato ,  Yoshihisa Watanabe ,  Hajime Teraji ,  Arinobu Yoshiura

    IPC: G03G15/16

    CPC classification number: G03G15/1615 ,  G03G2215/0129

    Abstract: A belt unit is detachably attached to a housing. A holder changes a state of an endless belt by moving a transfer roller between a first state as an endless belt movement state and a second state as a detachment state. The first state allows the endless belt to circulate for image formation, and the second state allows the belt unit to be detached from the housing. The holder moves the transfer roller adjacent supporter independently of the transfer roller and lifts the opening in the endless belt to a prescribed position to expose it to the front side plate.

    Abstract translation: 带单元可拆卸地附接到壳体。 支架通过将转印辊移动到作为环形带移动状态的第一状态和作为分离状态的第二状态之间来改变环形带的状态。 第一状态允许环形带循环用于图像形成，并且第二状态允许带单元与壳体分离。 保持器独立于转印辊移动转印辊与支撑件相邻，并将环形带中的开口提升到规定位置以将其暴露于前侧板。

    NONVOLATILE SEMICONDUCTOR MEMORY, METHOD FOR READING OUT THEREOF, AND MEMORY CARD
    36.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY, METHOD FOR READING OUT THEREOF, AND MEMORY CARD 有权
    非易失性半导体存储器，其读出方法和存储卡

    公开(公告)号：US20110299339A1

    公开(公告)日：2011-12-08

    申请号：US13210431

    申请日：2011-08-16

    Applicant: Makoto Iwai ,  Yoshihisa Watanabe

    Inventor： Makoto Iwai ,  Yoshihisa Watanabe

    IPC: G11C16/26

    CPC classification number: G11C16/0483 ,  G11C11/5642 ,  G11C16/26

    Abstract: A nonvolatile semiconductor memory includes: a memory cell unit including a plurality of memory cells having an electric charge accumulation layer and a control electrode, said memory cells being electrically connected in series; a plurality of word lines, each of which is electrically connected to said control electrode of said plurality of memory cells; a source line electrically connected to said memory cells at one end of said memory cell unit; a bit line electrically connected to said memory cells at the other end of said memory cell unit; and a control signal generation circuit, which during a data readout operation staggers a timing for selecting the word line connected to said memory cells of said memory cell unit from a timing for selecting a non-selected word line connected to a non-selected memory.

    Abstract translation: 非易失性半导体存储器包括：存储单元单元，包括具有电荷累积层和控制电极的多个存储单元，所述存储单元串联电连接; 多个字线，其各自电连接到所述多个存储单元的所述控制电极; 在所述存储单元单元的一端电连接到所述存储单元的源极线; 在所述存储单元单元的另一端电连接到所述存储单元的位线; 以及控制信号生成电路，其在数据读出操作期间，从连接到未选择的存储器的未选择的字线的选择时刻开始，选择连接到所述存储单元的所述存储单元的字线的定时。

    SEMICONDUCTOR MEMORY WRITE METHOD
    37.
    发明申请
    SEMICONDUCTOR MEMORY WRITE METHOD 失效
    半导体存储器写入方法

    公开(公告)号：US20100124113A1

    公开(公告)日：2010-05-20

    申请号：US12621913

    申请日：2009-11-19

    Applicant: Yoshihisa WATANABE

    Inventor： Yoshihisa WATANABE

    IPC: G11C16/04 ,  G11C7/10 ,  G11C7/00

    CPC classification number: G11C16/3454 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/24 ,  G11C16/3459 ,  G11C2211/5621

    Abstract: A semiconductor memory write method which, when writing data at a threshold voltage level in a memory cell, is configured to perform two write operations including a preliminary data write operation of writing temporary data at a threshold voltage level lower than that of the data at the threshold voltage level, and a final data write operation of additionally writing final data at the threshold voltage level, includes making at least one of a write time of the preliminary data write operation, a word-line waiting time of verify read, and a bit-line waiting time of verify read, shorter than that of the final data write operation.

    Abstract translation: 一种半导体存储器写入方法，当在存储器单元中以阈值电压电平写入数据时，被配置为执行两个写入操作，所述写入操作包括以比在该存储器单元的数据的阈值电压电平低的阈值电压写入临时数据的初步数据写入操作 以及在阈值电压电平附加地写入最终数据的最终数据写入操作包括进行初步数据写入操作的写入时间，验证读取的字线等待时间和位的至少一个 线路等待时间验证读取，比最终数据写入操作更短。

    Nonvolatile semiconductor memory, method for reading out thereof, and memory card
    38.
    发明授权
    Nonvolatile semiconductor memory, method for reading out thereof, and memory card 失效
    非易失性半导体存储器，读出方法和存储卡

    公开(公告)号：US07710779B2

    公开(公告)日：2010-05-04

    申请号：US12361362

    申请日：2009-01-28

    Applicant: Makoto Iwai ,  Yoshihisa Watanabe

    Inventor： Makoto Iwai ,  Yoshihisa Watanabe

    IPC: G11C16/04

    CPC classification number: G11C16/0483 ,  G11C11/5642 ,  G11C16/26

    Abstract: A nonvolatile semiconductor memory includes: a memory cell unit including a plurality of memory cells having an electric charge accumulation layer and a control electrode, said memory cells being electrically connected in series; a plurality of word lines, each of which is electrically connected to said control electrode of said plurality of memory cells; a source line electrically connected to said memory cells at one end of said memory cell unit; a bit line electrically connected to said memory cells at the other end of said memory cell unit; and a control signal generation circuit, which during a data readout operation staggers a timing for selecting the word line connected to said memory cells of said memory cell unit from a timing for selecting a non-selected word line connected to a non-selected memory.

    Abstract translation: 非易失性半导体存储器包括：存储单元单元，包括具有电荷累积层和控制电极的多个存储单元，所述存储单元串联电连接; 多个字线，其各自电连接到所述多个存储单元的所述控制电极; 在所述存储单元单元的一端电连接到所述存储单元的源极线; 在所述存储单元单元的另一端电连接到所述存储单元的位线; 以及控制信号生成电路，其在数据读出操作期间，从连接到未选择的存储器的未选择的字线的选择时刻开始，选择连接到所述存储单元的所述存储单元的字线的定时。

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