Gate insulator loss free etch-stop oxide thin film transistor
    34.
    发明授权
    Gate insulator loss free etch-stop oxide thin film transistor 有权
    栅极绝缘体无损蚀刻 - 停止氧化物薄膜晶体管

    公开(公告)号:US08823003B2

    公开(公告)日:2014-09-02

    申请号:US13629537

    申请日:2012-09-27

    Applicant: Apple Inc.

    Abstract: A method is provided for fabricating a thin-film transistor (TFT). The method includes forming a semiconductor layer over a gate insulator that covers a gate electrode, and depositing an insulator layer over the semiconductor layer, as well as etching the insulator layer to form a patterned etch-stop without losing the gate insulator. The method also includes forming a source electrode and a drain electrode over the semiconductor layer and the patterned etch-stop. The method further includes removing a portion of the semiconductor layer beyond the source electrode and the drain electrode such that a remaining portion of the semiconductor layer covers the gate insulator in a first overlapping area of the source electrode and the gate electrode and a second overlapping area of the drain electrode and gate electrode.

    Abstract translation: 提供了制造薄膜晶体管(TFT)的方法。 该方法包括在覆盖栅电极的栅极绝缘体上形成半导体层,以及在半导体层上沉积绝缘体层,以及蚀刻绝缘体层以形成图案化蚀刻停止件,而不会失去栅极绝缘体。 该方法还包括在半导体层和图案化蚀刻停止物上形成源电极和漏电极。 该方法还包括:除了源电极和漏电极之外的半导体层的一部分,使得半导体层的剩余部分在源电极和栅电极的第一重叠区域和第二重叠区域中覆盖栅极绝缘体 的漏电极和栅电极。

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