公开(公告)号：US20250036033A1

公开(公告)日：2025-01-30

申请号：US18716383

申请日：2022-11-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Emil Peter SCHMITT-WEAVER ,  Kaustuve BHATTACHARYYA ,  Dong Young CHEON ,  Adriaan Johan VAN LEEST

IPC: G03F9/00 ,  G03F7/00

Abstract: A method of compensating for focus deviations on a substrate having a plurality of layers present thereon, the method includes generating a focus prediction map for the substrate. In one approach, the focus prediction map is generated by obtaining key performance indicator data on the substrate using an alignment sensor, determining a correlation between the KPI data and focus offset data for positions on the substrate, and using the correlation and the KPI data, generating a focus prediction map for the substrate. In another approach, the prediction map is generated by obtaining a first layer height map for a first layer, measuring, with a level sensor, a second layer height map for a second layer overlying the first layer, and subtracting the first height map from the second height map to obtain a delta height map for the substrate.

公开(公告)号：US20240168388A1

公开(公告)日：2024-05-23

申请号：US18533109

申请日：2023-12-07

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus MATHIJSSEN ,  Kaustuve BHATTACHARYYA

IPC: G03F7/00

CPC classification number: G03F7/70625

Abstract: A method of inferring a value for at least one local uniformity metric relating to a product structure, the method including: obtaining intensity data including an intensity image relating to at least one diffraction order obtained from a measurement on a target; obtaining at least one intensity distribution from the intensity image; determining, from the at least one intensity distribution, an intensity indicator expressing a variation of either intensity over the at least one diffraction order, or a difference in intensity between two complimentary diffraction orders over the intensity image; and inferring the value for the at least one local uniformity metric from the intensity indicator.

公开(公告)号：US20220276180A1

公开(公告)日：2022-09-01

申请号：US17634588

申请日：2020-07-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Nitesh PANDEY ,  Simon Gijsbert Josephus MATHIJSSEN ,  Kaustuve BHATTACHARYYA ,  Arie Jeffrey DEN BOEF

IPC: G01N21/95 ,  G01J3/36 ,  G03F7/20 ,  G02B27/14 ,  G02B27/10

Abstract: An illumination and detection apparatus for a metrology tool, and associated method. The apparatus includes an illumination arrangement operable to produce measurement illumination having a plurality of discrete wavelength bands and having a spectrum having no more than a single peak within each wavelength band. The detection arrangement includes a detection beamsplitter to split scattered radiation into a plurality of channels, each channel corresponding to a different one of the wavelength bands; and at least one detector for separate detection of each channel.

公开(公告)号：US20220075276A1

公开(公告)日：2022-03-10

申请号：US17419648

申请日：2019-12-24

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus MATHIJSSEN ,  Marc Johannes NOOT ,  Kaustuve BHATTACHARYYA ,  Arie Jeffrey DEN BOEF ,  Grzegorz GRZELA ,  Timothy Dugan DAVIS ,  Olger Victor ZWIER ,  Ralph Timtheus HUIJGEN ,  Peter David ENGBLOM ,  Jan-Willem GEMMINK

IPC: G03F7/20 ,  G06T7/00 ,  G01N21/47

Abstract: A method provides the steps of receiving an image from a metrology tool, determining individual units of said image and discriminating the units which provide accurate metrology values. The images are obtained by measuring the metrology target at multiple wavelengths. The discrimination between the units, when these units are pixels in said image, is based on calculating a degree of similarity between said units.

公开(公告)号：US20220074875A1

公开(公告)日：2022-03-10

申请号：US17419653

申请日：2019-12-19

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus MATHIJSSEN ,  Arie Jeffrey DEN BOEF ,  Kaustuve BHATTACHARYYA

IPC: G01N23/20 ,  G03F7/20 ,  G06T5/10

Abstract: A method includes receiving an image formed in a metrology apparatus wherein the image comprises at least the resulting effect of at least two diffraction orders, and processing the image wherein the processing comprises at least a filtering step, for example a Fourier filter. The process of applying a filter may be obtained also by placing an aperture in the detection branch of the metrology apparatus.

公开(公告)号：US20210103227A1

公开(公告)日：2021-04-08

申请号：US17124758

申请日：2020-12-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Arie Jeffrey DEN BOEF ,  Timothy Dugan DAVIS ,  Peter David ENGBLOM ,  Kaustuve BHATTACHARYYA

IPC: G03F9/00 ,  G03F7/20 ,  G01B11/27

Abstract: A method including: determining recipe consistencies between one substrate measurement recipe of a plurality of substrate measurement recipes and each other substrate measurement recipe of the plurality of substrate measurement recipes; calculating a function of the recipe consistencies; eliminating the one substrate measurement recipe from the plurality of substrate measurement recipes if the function meets a criterion; and reiterating the determining, calculating and eliminating until a termination condition is met. Also disclosed herein is a substrate measurement apparatus, including a storage configured to store a plurality of substrate measurement recipes, and a processor configured to select one or more substrate measurement recipes from the plurality of substrate measurement recipes based on recipe consistencies among the plurality of substrate measurement recipes.

公开(公告)号：US20210026256A1

公开(公告)日：2021-01-28

申请号：US17039308

申请日：2020-09-30

Applicant: ASML Netherlands B.V.

Inventor： Martin Jacobus Johan JAK ,  Kaustuve BHATTACHARYYA

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L23/544

Abstract: An overlay metrology target (T) is formed by a lithographic process. A first image (740(0)) of the target structure is obtained using with illuminating radiation having a first angular distribution, the first image being formed using radiation diffracted in a first direction (X) and radiation diffracted in a second direction (Y). A second image (740(R)) of the target structure using illuminating radiation having a second angular illumination distribution which the same as the first angular distribution, but rotated 90 degrees. The first image and the second image can be used together so as to discriminate between radiation diffracted in the first direction and radiation diffracted in the second direction by the same part of the target structure. This discrimination allows overlay and other asymmetry-related properties to be measured independently in X and Y, even in the presence of two-dimensional structures within the same part of the target structure.

公开(公告)号：US20200004164A1

公开(公告)日：2020-01-02

申请号：US16480706

申请日：2018-01-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Emil Peter SCHMITT-WEAVER ,  Kaustuve BHATTACHARYYA ,  Wim Tjibbo TEL ,  Frank STAALS ,  Leon Martin LEVASIER

IPC: G03F7/20 ,  G03F9/00

Abstract: A method for monitoring a lithographic process, and associated lithographic apparatus. The method includes obtaining height variation data relating to a substrate supported by a substrate support and fitting a regression through the height variation data, the regression approximating the shape of the substrate; residual data between the height variation data and the regression is determined; and variation of the residual data is monitored over time. The residual data may be deconvolved based on known features of the substrate support.

公开(公告)号：US20190094703A1

公开(公告)日：2019-03-28

申请号：US16135197

申请日：2018-09-19

Applicant: ASML Netherlands B.V.

Inventor： Martin Jacobus Johan JAK ,  Simon Gijsbert Josephus MATHIJSSEN ,  Kaustuve BHATTACHARYYA ,  Won-Jae JANG ,  Jinmoo BYUN

IPC: G03F7/20

Abstract: A method to determine a patterning process parameter, the method comprising: for a target, calculating a first value for an intermediate parameter from data obtained by illuminating the target with radiation comprising a central wavelength; for the target, calculating a second value for the intermediate parameter from data obtained by illuminating the target with radiation comprising two different central wavelengths; and calculating a combined measurement for the patterning process parameter based on the first and second values for the intermediate parameter.

公开(公告)号：US20190041760A1

公开(公告)日：2019-02-07

申请号：US16073362

申请日：2017-02-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Kaustuve BHATTACHARYYA

IPC: G03F7/20 ,  G01N21/47

CPC classification number: G03F7/70633 ,  G01N21/47 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70641 ,  G03F7/70683

Abstract: A method of measuring a target, an associated lithographic method, an associated computer program product and an associated litho cell is provided, wherein the method includes measuring the target subsequent to exposure of structures by a lithographic process in a current layer on a substrate over one or more preceding layers, wherein the one or more preceding layers have each undergone an etch step, and wherein the target is only in at least one of the one or more preceding layers. In this way, an after-etch measurement of the target can be obtained.