公开(公告)号：US07955990B2

公开(公告)日：2011-06-07

申请号：US12334220

申请日：2008-12-12

申请人： Jon Henri ,  Gishun Hsu ,  Robert Sculac ,  Scott Stoddard

发明人： Jon Henri ,  Gishun Hsu ,  Robert Sculac ,  Scott Stoddard

IPC分类号： H01L21/31

CPC分类号： H01L21/3146 ,  C23C16/26 ,  C23C16/448

摘要： Provided herein are improved methods of depositing carbon-based films using acetylene as a precursor. The methods involve using a low-vapor pressure solvent, e.g., dimethylfluoride (DMF) to stabilize the acetylene and delivering the acetylene to a deposition chamber. The methods provide improved wafer-to-wafer thickness uniformity and increase the usable amount of acetylene in an acetylene source to over 95%.

摘要翻译： 本文提供了使用乙炔作为前体沉积碳基膜的改进方法。 所述方法包括使用低蒸气压溶剂，例如二甲基氟（DMF）来稳定乙炔并将乙炔输送到沉积室。 这些方法提供了改进的晶片到晶片的厚度均匀性，并且将乙炔源中的乙炔的可用量增加到超过95％。

公开(公告)号：US07381644B1

公开(公告)日：2008-06-03

申请号：US11318269

申请日：2005-12-23

申请人： Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri

发明人： Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri

IPC分类号： H01L21/44

CPC分类号： H01L21/02115 ,  C23C16/26 ,  C23C16/515 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0332 ,  H01L21/3146 ,  Y10S438/942

摘要： A method for forming a PECVD deposited ashable hardmask (AHM) with less than 30% H content at a process temperature below 500° C., e.g., about 400° C. produces low H content hard masks having the property of high selectivity of the hard mask film to the underlying layers for successful integration of the film, and are suitable for use with 193 nm generation and below lithography schemes wherein high selectivity of the hard mask to the underlying layers is required. The low temperature, low H films are produced by use of a pulsed film hydrocarbon precursor plasma treatment that reduces the amount of hydrogen incorporated in the film and therefore drives down the etch rate of the hard mask thus increasing the selectivity. The lower temperature process also allows reduction of the overall thermal budget for a wafer.

摘要翻译： 在低于500℃（例如约400℃）的过程温度下形成具有小于30％H含量的PECVD沉积的可吸入硬掩模（AHM）的方法产生具有高选择性的低H含量硬掩模 硬掩模膜到底层以便成功地整合膜，并且适用于需要193nm生成和低于光刻方案，其中需要硬掩模到底层的高选择性。 通过使用脉冲膜烃前体等离子体处理来生产低温低H膜，其减少了掺入膜中的氢的量，因此降低了硬掩模的蚀刻速率，从而提高了选择性。 较低的温度过程还可以降低晶片的整体热预算。

公开(公告)号：US06793796B2

公开(公告)日：2004-09-21

申请号：US09796856

申请日：2001-02-28

申请人： Jonathan D. Reid ,  David Smith ,  Steven T. Mayer ,  Jon Henri ,  Sesha Varadarajan

发明人： Jonathan D. Reid ,  David Smith ,  Steven T. Mayer ,  Jon Henri ,  Sesha Varadarajan

IPC分类号： C25D518

CPC分类号： C25D3/38 ,  C25D5/18 ,  H01L21/2885 ,  H01L21/76877 ,  H05K3/423

摘要： Electroplating methods using an electroplating bath containing metal ions and a suppressor additive, an accelerator additive, and a leveler additive, together with controlling the current density applied to a substrate, avoid defects in plated films on substrates having features with a range of aspect ratios, while providing good filling and thickness distribution. The methods include, in succession, applying DC cathodic current densities optimized to form a conformal thin film on a seed layer, to provide bottom-up filling, preferentially on features having the largest aspect ratios, and to provide conformal plating of all features and adjacent field regions. Including a leveling agent in the electroplating bath produces films with better quality after subsequent processing.

摘要翻译： 使用含有金属离子的电镀浴和抑制剂添加剂，促进剂添加剂和矫光添加剂的电镀方法以及控制施加到基材上的电流密度，避免了具有一定范围的纵横比的特征的基板上的电镀膜的缺陷， 同时提供良好的填充和厚度分布。 这些方法依次包括施加直流阴极电流密度，其优化以在种子层上形成保形薄膜，从而优选地在具有最大纵横比的特征上提供自下而上的填充，并提供所有特征和相邻的特征的保形电镀 场地区域。 在电镀浴中包括流平剂在后续处理后产生更好质量的膜。

公开(公告)号：US06440291B1

公开(公告)日：2002-08-27

申请号：US09727431

申请日：2000-11-30

申请人： Jon Henri ,  John Floyd Ostrowski

发明人： Jon Henri ,  John Floyd Ostrowski

IPC分类号： C25D534

CPC分类号： C25D5/34 ,  C25D21/12

摘要： Methods and apparatus are used for triggering and controlling an initial induction period in which a substrate is immersed in an electrochemical bath prior to actual electrochemical processing. This is accomplished by sensing a change in cell potential upon immersion of the substrate or a counter electrode in an electrochemical bath. Appropriate logic then holds the cell potential or current at a fixed value for a defined delay period. After that period ends, the logic allows the cell potential or current to increase to a level where electrochemical processing begins.

摘要翻译： 方法和装置用于触发和控制初始诱导期，其中在实际电化学处理之前将基底浸入电化学浴中。 这是通过在基板或对电极浸入电化学浴中感测电池电位的变化来实现的。 适当的逻辑然后将单元电位或电流保持在定义的延迟周期的固定值。 在该期间结束之后，逻辑允许电池电位或电流增加到电化学处理开始的水平。