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31.发明授权Method of varying stepper exposure dose to compensate for across-wafer variations in photoresist thickness 失效改变步进曝光剂量以补偿光致抗蚀剂厚度的跨晶片变化的方法公开(公告)号：US06576385B2
公开(公告)日：2003-06-10
申请号：US09776206
申请日：2001-02-02
IPC分类号： G03F900
CPC分类号： G03F7/70558
摘要： A method of compensating for across-wafer variations in photoresist thickness is provided. The method comprises providing a wafer having a process layer formed there-above, forming a layer of photoresist above the process layer, measuring a thickness of the layer of photoresist at a plurality of locations to result in a plurality of thickness measurements, providing the thickness measurements to a controller that determines, based upon the thickness measurements, an exposure dose of an exposure process to be performed on the layer of photoresist, and performing the exposure process on the layer of photoresist using the determined exposure dose. This exposure dose may be varied on a flash-by-flash basis as the stepper tool “steps” across the surface of wafers. That is, the exposure dose for a group of flashes, or for each flash, may be varied in response to the thickness measurements.
摘要翻译： 提供了补偿光致抗蚀剂厚度的跨晶片变化的方法。 该方法包括提供具有在其上形成的处理层的晶片，在处理层上方形成光致抗蚀剂层，测量多个位置处的光致抗蚀剂层的厚度，以产生多个厚度测量值，从而提供厚度 控制器的测量，其基于厚度测量确定将在光致抗蚀剂层上进行的曝光处理的曝光剂量，以及使用确定的曝光剂量对光致抗蚀剂层进行曝光处理。 当步进工具跨越晶片表面“步进”时，该曝光剂量可以在逐闪的基础上变化。 也就是说，一组闪光或每个闪光灯的曝光剂量可以响应于厚度测量而变化。
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公开(公告)号：US07424392B1
公开(公告)日：2008-09-09
申请号：US10323502
申请日：2002-12-18
CPC分类号： G05B19/41875 , G05B2219/32135 , G05B2219/32182 , G05B2219/32184 , G05B2219/37224 , G05B2219/41146 , G05B2219/41147 , G05B2219/50065 , Y02P90/22
摘要： A method and an apparatus are provided for applying a self-adaptive filter to a drifting process. The method includes processing a workpiece, measuring an output characteristic of the processed workpiece and modifying a previous estimated process state based at least on the measured output characteristic. The method further includes estimating a next process state based at least on the modified previous estimated process state.
摘要翻译： 提供了一种用于将自适应滤波器应用于漂移过程的方法和装置。 该方法包括处理工件，测量被处理工件的输出特性，以及至少基于所测量的输出特性修改先前的估计过程状态。 该方法还包括至少基于修改的先前估计的处理状态来估计下一处理状态。
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33.发明授权Method of selectively processing wafer edge regions to increase wafer uniformity, and system for accomplishing same 有权选择性地处理晶片边缘区域以增加晶片均匀性的方法，以及用于实现晶片边缘区域的系统公开(公告)号：US06589875B1
公开(公告)日：2003-07-08
申请号：US09920997
申请日：2001-08-02
IPC分类号： H01L21311
CPC分类号： H01L21/31116 , H01L21/31144 , H01L21/32115 , H01L21/32139 , Y10S438/974
摘要： In one illustrative embodiment, the method includes providing a wafer including at least one non-production area, forming a process layer above the wafer, forming a masking layer above the process layer, the masking layer being patterned so as to expose a portion of the process layer formed above the at least one non-production area, and performing a process operation on the exposed portion of the process layer formed above the at least one non-production area. In another aspect, the present invention is directed to a system that includes a controller for identifying at least one non-production area of a wafer, a photolithography tool for forming a masking layer above the process layer, the masking layer being patterned so as to expose a portion of the process layer formed above the at least one non-production area, and an etch tool for performing an etching process on the exposed portion of the process layer formed above the at least one non-production area.
摘要翻译： 在一个说明性实施例中，该方法包括提供包括至少一个非生产区域的晶片，在晶片上形成工艺层，在工艺层上方形成掩模层，掩模层被图案化，以暴露部分 处理层，形成在至少一个非生产区域上方，并且对形成在至少一个非生产区域上方的处理层的暴露部分进行处理操作。 在另一方面，本发明涉及一种系统，其包括用于识别晶片的至少一个非生产区域的控制器，用于在工艺层上方形成掩模层的光刻工具，所述掩模层被图案化，以便 暴露形成在所述至少一个非生产区域之上的所述工艺层的一部分，以及蚀刻工具，用于对形成在所述至少一个非生产区域上方的所述工艺层的所述暴露部分进行蚀刻工艺。
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34.发明授权Dispatch and/or disposition of material based upon an expected parameter result 失效根据预期的参数结果调度和/或布置材料公开(公告)号：US06947803B1
公开(公告)日：2005-09-20
申请号：US10259064
申请日：2002-09-27
CPC分类号： H01L21/67253
摘要： A method and an apparatus for affecting dispatch and/or disposition of a workpiece. A process step upon a workpiece is performed based upon a predetermined routing plan. An end-of-line parameter is modeled based upon the process performed upon the workpiece. A workpiece routing/disposition process is performed based upon modeling an end-of-line (EOL) parameter. The workpiece routing/disposition process includes using a controller to modify the routing plan.
摘要翻译： 一种用于影响工件的调度和/或布置的方法和装置。 基于预定的布线计划执行工件上的工艺步骤。 根据在工件上执行的过程来对行尾参数进行建模。 基于对行尾（EOL）参数的建模来执行工件路线/配置过程。 工件路线/处理过程包括使用控制器修改路由计划。
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公开(公告)号：US06823231B1
公开(公告)日：2004-11-23
申请号：US10303307
申请日：2002-11-25
IPC分类号： G06F1900
CPC分类号： H01L22/12
摘要： A method and an apparatus for selectively processing a layer of a workpiece based upon dependencies with other layers in the workpiece. A process step upon the workpiece is performed. Metrology data relating to the workpiece is acquired. A process adjustment relating to a first layer on the workpiece is calculated based upon the metrology data. A determination whether an error on a second layer on the workpiece would occur in response to an implementation of the process adjustment performed on the first layer. A magnitude of the calculated process adjustment is reduced in response to a determination that the second layer would be affected in response to the implementation of the process adjustment.
摘要翻译： 一种用于基于与工件中的其它层的依赖性选择性地处理工件层的方法和装置。 执行工件上的工艺步骤。 获取与工件有关的计量数据。 基于测量数据计算与工件上的第一层有关的过程调整。 响应于在第一层上执行的过程调整的实现，确定在工件上的第二层上是否发生错误。 响应于响应于过程调整的实现而影响第二层的确定，所计算的过程调整的大小被减小。
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36.发明授权公开(公告)号：US06737208B1
公开(公告)日：2004-05-18
申请号：US10022488
申请日：2001-12-17
IPC分类号： G03F900
CPC分类号： G03F7/70525
摘要： A method for controlling a photolithography process includes forming a first layer on a selected wafer. A first overlay error associated with the first layer is measured. At least one parameter in an operating recipe for performing a photolithography process on a second layer formed on the first wafer is determined based on at least the first overlay error measurement. A processing line includes a photolithography stepper, and overlay metrology tool, and a controller. The photolithography stepper is configured to process wafers in accordance with an operating recipe. The overlay metrology tool is configured to measure overlay errors associated with the processing of the wafers in the photolithography stepper. The controller is configured to receive a first overlay error measurement associated with the formation of a first layer on a selected wafer and determine at least one parameter in the operating recipe for performing a photolithography process on a second layer formed on the selected wafer based on at least the first overlay error measurement
摘要翻译： 一种用于控制光刻工艺的方法包括在所选晶片上形成第一层。 测量与第一层相关联的第一重叠错误。 至少基于第一覆盖误差测量来确定用于在形成在第一晶片上的第二层上进行光刻工艺的操作配方中的至少一个参数。 处理线包括光刻步进机，重叠计量工具和控制器。 光刻步进器被配置为根据操作配方处理晶片。 覆盖计量工具被配置为测量与光刻步进机中的晶片的处理相关联的重叠误差。 控制器被配置为接收与所选择的晶片上形成第一层相关联的第一重叠误差测量，并确定操作配方中的至少一个参数，用于在形成于所选择的晶片上的第二层上进行光刻处理 最少重叠错误测量
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37.发明授权Method and apparatus for modeling of batch dynamics based upon integrated metrology 有权基于综合计量学的批量动力学建模方法和装置公开(公告)号：US06698009B1
公开(公告)日：2004-02-24
申请号：US10085938
申请日：2002-02-28
IPC分类号： G06F1750
CPC分类号： H01L22/20 , H01L2223/54453
摘要： A method and an apparatus for performing modeling of batch dynamics in processing of semiconductor wafers. The method includes performing the process on the first semiconductor wafer in a lot, the process being controlled by a tool model, and acquiring integrated metrology data related to the process of the first semiconductor wafer using an integrated metrology tool. The method further includes performing a lot dynamic modeling process based upon an analysis of the integrated metrology data, the lot dynamic modeling process comprising adjusting the tool model based upon analysis of the integrated metrology data, and performing the process on a second semiconductor wafer in the lot based upon the adjusted tool model.
摘要翻译： 一种用于在半导体晶片的处理中执行批量动力学建模的方法和装置。 该方法包括在第一半导体晶片上进行大量的处理，该工艺由工具模型控制，以及使用集成计量工具获取与第一半导体晶片的工艺相关的集成度量数据。 该方法还包括基于综合测量数据的分析来执行大量动态建模过程，批量动态建模过程包括基于集成测量数据的分析来调整工具模型，以及在第二半导体晶片上执行该过程 基于调整后的工具模型。
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公开(公告)号：US06665623B1
公开(公告)日：2003-12-16
申请号：US10209789
申请日：2002-07-31
IPC分类号： G01R3126
CPC分类号： G01R31/2831
摘要： A method includes measuring a characteristic of a workpiece at a plurality of locations. A uniformity profile is generated based on the characteristic measurements. At least one acceptable region of the workpiece is identified based on the uniformity profile. At least one unacceptable region of the workpiece is identified based on the uniformity profile. The uniformity profile is filtered to remove at least a portion of the characteristic measurements associated with the second unacceptable region. At least one parameter of an operating recipe for performing a process on the workpiece is determined based on the filtered uniformity profile.
摘要翻译： 一种方法包括在多个位置测量工件的特性。 基于特征测量产生均匀性曲线。 基于均匀性轮廓识别工件的至少一个可接受区域。 基于均匀性轮廓来识别工件的至少一个不可接受的区域。 过滤均匀性分布以去除与第二不可接受区域相关联的特征测量的至少一部分。 基于滤波的均匀性轮廓来确定用于在工件上执行处理的操作配方的至少一个参数。
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39.发明授权公开(公告)号：US06897075B2
公开(公告)日：2005-05-24
申请号：US10778411
申请日：2004-02-13
IPC分类号： G03F7/20 , H01L21/027 , G01R21/26
CPC分类号： G03F7/70525
摘要： A method for controlling a photolithography process includes forming a first layer on a selected wafer. A first overlay error associated with the first layer is measured. At least one parameter in an operating recipe for performing a photolithography process on a second layer formed on the first wafer is determined based on at least the first overlay error measurement. A processing line includes a photolithography stepper, and overlay metrology tool, and a controller. The photolithography stepper is configured to process wafers in accordance with an operating recipe. The overlay metrology tool is configured to measure overlay errors associated with the processing of the wafers in the photolithography stepper. The controller is configured to receive a first overlay error measurement associated with the formation of a first layer on a selected wafer and determine at least one parameter in the operating recipe for performing a photolithography process on a second layer formed on the selected wafer based on at least the first overlay error measurement.
摘要翻译： 一种用于控制光刻工艺的方法包括在所选晶片上形成第一层。 测量与第一层相关联的第一重叠错误。 至少基于第一覆盖误差测量来确定用于在形成在第一晶片上的第二层上进行光刻工艺的操作配方中的至少一个参数。 处理线包括光刻步进机，重叠计量工具和控制器。 光刻步进器被配置为根据操作配方处理晶片。 覆盖计量工具被配置为测量与光刻步进机中的晶片的处理相关联的重叠误差。 控制器被配置为接收与所选择的晶片上形成第一层相关联的第一重叠误差测量，并确定操作配方中的至少一个参数，用于在形成于所选择的晶片上的第二层上进行光刻处理 最少重叠错误测量。
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40.发明授权Dynamic lot allocation based upon wafer state characteristics, and system for accomplishing same 失效基于晶片状态特性的动态批量分配以及完成相同的系统公开(公告)号：US06746308B1
公开(公告)日：2004-06-08
申请号：US09903267
申请日：2001-07-11
IPC分类号： B24B4900
CPC分类号： H01L22/20
摘要： In one illustrative embodiment, the method comprises providing a plurality of wafer lots, each of the lots comprising a plurality of wafers, performing at least one process operation on at least some of the wafers in each of the plurality of lots, identifying processed wafers having similar characteristics, re-allocating the wafers to lots based upon the identified characteristics, and performing additional processing operations on the identified wafers having similar characteristics in the re-allocated lots. In one illustrative embodiment, the system comprises a first processing tool for performing processing operations on each of a plurality of wafers in each of a plurality of wafer lots, a controller for identifying processed wafers having similar characteristics and re-allocating the wafers to lots based upon the identified characteristics, and a second processing tool adapted to perform additional processing operations on the identified wafers having similar characteristics in the re-allocated lot.
摘要翻译： 在一个说明性实施例中，该方法包括提供多个晶片批次，每个批次包括多个晶片，对多个批次中的每一个中的至少一些晶片执行至少一个处理操作，识别处理后的晶片具有 类似的特征，基于所识别的特征将晶片重新分配到批次，以及对经重新分配的批次具有相似特征的所识别的晶片执行附加的处理操作。 在一个说明性实施例中，该系统包括用于对多个晶片批次中的每一个中的多个晶片中的每一个执行处理操作的第一处理工具，用于识别具有相似特性并且将晶片重新分配给批次的处理晶片的控制器 以及第二处理工具，其适于对所重新分配的批次中具有相似特征的所识别的晶片执行附加处理操作。
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