公开(公告)号：US06593209B2

公开(公告)日：2003-07-15

申请号：US10002260

申请日：2001-11-15

申请人： Anthony D. Kurtz ,  Alexander A. Ned

发明人： Anthony D. Kurtz ,  Alexander A. Ned

IPC分类号： H01L2176

CPC分类号： G01L9/0042

摘要： In order to close or cover micropipes, which generally are formed in SiC bulk material, one sputters or deposits or grows a layer of silicon on the backside of a micromachined silicon carbide diaphragm. This is followed by an oxidation process. In this approach, the deposition of silicon reduces or completely plugs the micropipes. After the silicon deposition, the wafer is oxidized which completely closes the otherwise reduced micropipes. Since the oxidation process is significantly faster than silicon and SiC, it is significantly easier to close even the largest of micropipes. The thickness of the silicon, the processing for depositing or growing silicon, and the process of oxidation can be adjusted to close micropipes in different SiC materials.

公开(公告)号：US5750898A

公开(公告)日：1998-05-12

申请号：US727882

申请日：1996-10-09

申请人： Anthony D. Kurtz ,  Alexander A. Ned ,  Timoteo I. Vergel de Dios

发明人： Anthony D. Kurtz ,  Alexander A. Ned ,  Timoteo I. Vergel de Dios

IPC分类号： G01L9/00 ,  H01L21/314 ,  G01L9/06

CPC分类号： H01L21/314 ,  G01L9/0055 ,  Y10S438/958

摘要： A method for passivating diamond films to substantially prevent them from oxidizing at temperatures up to 800.degree. C. in an oxygen atmosphere. The method involves depositing one or more passivating layers over the diamond film wherein one of the layers is nitride and the other layer is quartz. The passivation technique is directly applicable to diamond sensor pressure transducers and enable them to operate at temperatures above 800.degree. C. in oxygen environments. The passivation technique also provides an economical and simple method for patterning diamond films.

摘要翻译： 一种钝化金刚石膜的方法，以在氧气氛中基本上防止其在高达800℃的温度下氧化。 该方法包括在金刚石膜上沉积一个或多个钝化层，其中一层是氮化物，另一层是石英。 钝化技术直接适用于金刚石传感器压力传感器，使其能够在氧气环境中高于800℃的温度下工作。 钝化技术还提供了用于图案化金刚石膜的经济且简单的方法。

公开(公告)号：US5473944A

公开(公告)日：1995-12-12

申请号：US292406

申请日：1994-08-18

申请人： Anthony D. Kurtz ,  Alexander A. Ned

发明人： Anthony D. Kurtz ,  Alexander A. Ned

IPC分类号： G01L9/00 ,  G01L13/00

CPC分类号： G01L9/0019 ,  Y10S148/012

摘要： A pressure transducer comprising at least one diaphragm formed in a wafer of semiconducting material, the at least one diaphragm being spaced from a first surface of the wafer, a first layer of semiconducting material disposed over the at least one diaphragm, the first layer forming at least one resonating beam over the at least one diaphragm, and a plurality of resistor elements formed from a third layer of semiconducting material disposed over the at least one resonating beam, and isolation means for dielectrically isolating the at least one resonating beam from the at least one diaphragm.

摘要翻译： 一种压力传感器，包括形成在半导体材料晶片中的至少一个光阑，所述至少一个光阑与所述晶片的第一表面间隔开，设置在所述至少一个光阑上的第一层半导体材料，所述第一层形成在 在所述至少一个隔膜上的至少一个谐振束，以及由设置在所述至少一个谐振束上的第三层半导体材料形成的多个电阻元件，以及隔离装置，用于将所述至少一个谐振束与所述至少一个谐振束 一个隔膜

公开(公告)号：US08482372B2

公开(公告)日：2013-07-09

申请号：US13453685

申请日：2012-04-23

申请人： Anthony D. Kurtz ,  Alexander A. Ned

发明人： Anthony D. Kurtz ,  Alexander A. Ned

IPC分类号： G01L1/22

CPC分类号： G01L1/18 ,  C03C27/044 ,  G01L1/2287 ,  G01L9/0042 ,  G01L9/0054 ,  G01L19/0069 ,  G01L19/0084 ,  Y10T156/10

摘要： A piezoresistive sensor device and method for making the same are disclosed. The device comprises a silicon wafer having piezoresistive elements and contacts in electrical communication with the elements. The device further comprises a contact glass coupled to the silicon wafer and having apertures aligned with the contacts. The device also comprises a non-conductive frit for mounting the contact glass to a header glass, and a conductive non-lead glass frit disposed in the apertures and in electrical communication with the contacts. The method for making the device comprises bonding a contact glass to a silicon wafer such that apertures in the glass line up with contacts on the wafer, and filling the apertures with a non-lead glass frit such that the frit is in electrical communication with the contacts. The use of a lead free glass frit prevents catastrophic failure of the device in ultra high temperature applications.

摘要翻译： 公开了一种压阻传感器装置及其制造方法。 该器件包括具有压阻元件和与元件电连通的触点的硅晶片。 该装置还包括联接到硅晶片并具有与触点对准的孔的接触玻璃。 该装置还包括用于将接触玻璃安装到集管玻璃的非导电玻璃料，以及设置在孔中并与触头电连通的导电非铅玻璃料。 制造该器件的方法包括将接触玻璃接合到硅晶片，使得玻璃中的孔与晶片上的触点对齐，并用非铅玻璃料填充孔，使得玻璃料与 联系人 使用无铅玻璃料可防止器件在超高温应用中的灾难性故障。

公开(公告)号：US20120029847A1

公开(公告)日：2012-02-02

申请号：US13253139

申请日：2011-10-05

申请人： ANTHONY D. KURTZ ,  Alexander A. Ned ,  Joseph Van DeWeert

发明人： ANTHONY D. KURTZ ,  Alexander A. Ned ,  Joseph Van DeWeert

IPC分类号： G06F19/00

CPC分类号： G01L9/00 ,  G01L9/065 ,  G01L15/00 ,  G01M9/06

摘要： A system for measuring a multiplicity of pressures as those experienced by a model in a wind tunnel is depicted. The system includes individual sensor devices which are connected to an electronics module. The sensors may be connected to the electronics module via a cable in a first embodiment. In an alternate embodiment, the sensors may be connected to the electronics module via a mating connector located therebetween. A memory component which stores compensation coefficients associated with each of the sensors may also be included in the system to correct errors associated with each sensor. The advantage of the various embodiments is that each sensor does not have any compensation stored thereon and thus, the sensors can be made very small to operate at very high temperatures without any loss of accuracy.

摘要翻译： 描绘了一种用于测量如风洞中的模型所经历的多种压力的系统。 该系统包括连接到电子模块的各个传感器装置。 在第一实施例中，传感器可以经由电缆连接到电子模块。 在替代实施例中，传感器可以经由位于其间的匹配连接器连接到电子模块。 存储与每个传感器相关联的补偿系数的存储器组件也可以被包括在系统中以校正与每个传感器相关联的错误。 各种实施例的优点是每个传感器不存在其上的任何补偿，因此，可以使传感器非常小以在非常高的温度下操作而没有任何精度的损失。

公开(公告)号：US08069730B2

公开(公告)日：2011-12-06

申请号：US12291870

申请日：2008-11-14

申请人： Anthony D. Kurtz ,  Scott J. Goodman ,  Alexander A. Ned

发明人： Anthony D. Kurtz ,  Scott J. Goodman ,  Alexander A. Ned

IPC分类号： G01L9/06

CPC分类号： G01L1/18 ,  G01L19/003 ,  G01M9/06

摘要： A novel flexible transducer structure is suitable for attaching to curved surface such as the leading edge of an aircraft wing. The structure comprises a thin flexible sheet of an insulating material with a leadless transducer secured to the sheet. The sheet is then placed over the curved surface and assumes the curvature of the surface. The transducer secured to the sheet provides an output of pressure according the pressure exerted on the sheet. The sheet basically is fabricated from a thin material such as Kapton and is flexible so as to assume the curvature of the surface with the transducer being exposed to pressure applied to the curved surface. The sensor in conjunction with the flexible sheet allows pressure to be measured without disturbing the air flow patterns of the measuring surfaces and because of its construction, is moisture resistant over a large variety of atmospheric conditions.

摘要翻译： 一种新颖的柔性换能器结构适用于连接到诸如飞机机翼前缘的弯曲表面。 该结构包括具有固定到片材的无引导换能器的绝缘材料的薄柔性片。 然后将片材放置在弯曲表面上并呈现表面的曲率。 固定到片材上的传感器根据施加在片材上的压力提供压力输出。 片材基本上由诸如Kapton的薄材料制成，并且是柔性的，以便呈现表面的曲率，其中换能器暴露于施加到弯曲表面的压力。 传感器与柔性片材相结合，允许测量压力，而不会干扰测量表面的气流图案，并且由于其结构，在各种大气条件下都是防潮的。

公开(公告)号：US20110275192A1

公开(公告)日：2011-11-10

申请号：US13188511

申请日：2011-07-22

申请人： Anthony D. Kurtz ,  Alexander A. Ned

发明人： Anthony D. Kurtz ,  Alexander A. Ned

IPC分类号： H01L21/302 ,  B82Y40/00

CPC分类号： H01L21/76251

摘要： A method of fabricating a semiconductor-on-insulator device including: providing a first semiconductor wafer having an about 500 angstrom thick oxide layer thereover; etching the first semiconductor wafer to raise a pattern therein; doping the raised pattern of the first semiconductor wafer through the about 500 angstrom thick oxide layer; providing a second semiconductor wafer having an oxide thereover; and, bonding the first semiconductor wafer oxide to the second semiconductor wafer oxide at an elevated temperature.

摘要翻译： 一种制造绝缘体上半导体器件的方法，包括：提供其上具有约500埃厚的氧化物层的第一半导体晶片; 蚀刻第一半导体晶片以在其中升高图案; 通过约500埃厚的氧化物层掺杂第一半导体晶片的凸起图案; 提供其上具有氧化物的第二半导体晶片; 并且在升高的温度下将第一半导体晶片氧化物接合到第二半导体晶片氧化物。

公开(公告)号：US07439159B2

公开(公告)日：2008-10-21

申请号：US11262179

申请日：2005-10-28

申请人： Anthony D. Kurtz ,  Alexander A. Ned

发明人： Anthony D. Kurtz ,  Alexander A. Ned

IPC分类号： H01L21/30

CPC分类号： H01L21/76251

摘要： A method of fabricating a semiconductor-on-insulator device including: providing a first semiconductor wafer having an about 200 angstrom thick oxide layer thereover; etching the first semiconductor wafer to raise a pattern therein; doping the raised pattern of the first semiconductor wafer through the about 200 angstrom thick oxide layer; providing a second semiconductor wafer having an oxide thereover; and, bonding the first semiconductor wafer oxide to the second semiconductor wafer oxide at an elevated temperature.

摘要翻译： 一种制造绝缘体上半导体器件的方法，包括：提供其上具有约200埃厚的氧化物层的第一半导体晶片; 蚀刻第一半导体晶片以在其中升高图案; 通过约200埃厚的氧化物层掺杂第一半导体晶片的凸起图案; 提供其上具有氧化物的第二半导体晶片; 并且在升高的温度下将第一半导体晶片氧化物接合到第二半导体晶片氧化物。

公开(公告)号：US20080217728A1

公开(公告)日：2008-09-11

申请号：US12151644

申请日：2008-05-08

申请人： Anthony D. Kurtz ,  Alexander A. Ned

发明人： Anthony D. Kurtz ,  Alexander A. Ned

IPC分类号： H01L21/70 ,  H01L21/30

CPC分类号： H01L21/76251

摘要： A method of fabricating a semiconductor-on-insulator device including: providing a first semiconductor wafer having an about 200 angstrom thick oxide layer thereover; etching the first semiconductor wafer to raise a pattern therein; doping the raised pattern of the first semiconductor wafer through the about 200 angstrom thick oxide layer; providing a second semiconductor wafer having an oxide thereover; and, bonding the first semiconductor wafer oxide to the second semiconductor wafer oxide at an elevated temperature.

公开(公告)号：US07307325B2

公开(公告)日：2007-12-11

申请号：US11039587

申请日：2005-01-20

申请人： Anthony D. Kurtz ,  Alexander A. Ned ,  Scott J. Goodman

发明人： Anthony D. Kurtz ,  Alexander A. Ned ,  Scott J. Goodman

IPC分类号： H01L29/84 ,  H01L31/058

CPC分类号： G01L9/0055 ,  G01L19/0084

摘要： A silicon wafer is fabricated utilizing two or more semiconductor wafers. The wafers are processed using conventional wafer processing techniques and the wafer contains a plurality of output terminals which essentially are platinum titanium metallization or high temperature contacts. A glass cover member is provided which has a plurality of through holes. Each through hole is associated with a contact on the semiconductor wafer. A high temperature lead is directed through the through hole or aperture in the glass cover and is bonded directly to the appropriate contact. The lead is of a sufficient length to extend into a second non through aperture in the contact glass. The non through aperture is located on the side of the contact glass not in contact with the silicon sensor. The non through aperture is then filled with a high temperature conductive glass frit. A plurality of slots are provided. Each slot is associated with a through and a non through aperture to accommodate the wire as directed from the through aperture through the slot and into the non through aperture. The slots provide means of retaining or securing the wire as it passes from the through aperture to the non through aperture. The non through apertures as indicated are filled with a high temperature conductive glass frit which glass frit accommodates suitable pins.

摘要翻译： 利用两个或更多个半导体晶片制造硅晶片。 使用常规晶片处理技术处理晶片，并且晶片包含基本上是铂钛金属化或高温接触的多个输出端子。 提供了一种具有多个通孔的玻璃盖构件。 每个通孔与半导体晶片上的接触相关联。 高温引线通过玻璃盖中的通孔或孔直接接合到适当的接触处。 引线具有足够的长度以延伸到接触玻璃中的第二非通孔中。 非通孔位于接触玻璃的不与硅传感器接触的一侧。 然后用高温导电玻璃料填充非通孔。 提供多个槽。 每个狭槽与通孔和非通孔相关联，以便从通孔穿过狭槽引导并且进入非通孔。 这些槽提供了当线从通孔到非通孔时保持或固定的装置。 如所示的非通孔填充有玻璃料容纳适当针脚的高温导电玻璃料。