公开(公告)号：US20090078547A1

公开(公告)日：2009-03-26

申请号：US11903450

申请日：2007-09-21

申请人： Anthony D. Kurtz ,  Joseph Van DeWeert

发明人： Anthony D. Kurtz ,  Joseph Van DeWeert

IPC分类号： H01H35/24 ,  H01H35/34

CPC分类号： H01H35/34 ,  G01L1/18 ,  G01L1/20 ,  H01H1/0036 ,  H01H35/2657 ,  H01H2001/0084

摘要： A pressure switch employs semiconductor silicon on insulator (SOI) technology and utilizes a first silicon wafer which has a deflecting diaphragm. Deposited on the wafer is at least one distinct metal contact. Secured to the semiconductor wafer is a glass wafer having a central aperture defining a deflecting region. Positioned on top of the glass wafer is another metal contact which is positioned to receive the two contacts deposited on the silicon wafer when a given pressure is applied to the silicon wafer. The metal contact on the silicon wafer is connected to a header pin, via apertures formed in the glass wafer, the apertures are filled with a conductive glass metal frit so that contact is made between the header pins and the metal contacts deposited on the silicon wafer. Operation is such that when a pressure is applied of a given magnitude the contact on the silicon wafer will contact the metal contact trace on the glass wafer and therefore a connection would be made between the first metal trace and the second metal trace to create a low impedance path between the two traces thereby connecting the first trace on the silicon wafer to the second trace on the glass wafer. This creates a high impedance or open circuit in a first state and when the pressure exceeds the threshold a slow impedance or short circuit in a second state.

摘要翻译： 压力开关采用半导体绝缘体（SOI）技术，并利用具有偏转膜片的第一硅晶片。 沉积在晶片上的是至少一种不同的金属接触。 安装到半导体晶片的是具有限定偏转区域的中心孔的玻璃晶片。 位于玻璃晶片顶部的另一个金属接触件被定位成当向硅晶片施加给定的压力时接收沉积在硅晶片上的两个触点。 硅晶片上的金属接触通过形成在玻璃晶片中的孔连接到集管引脚，孔被导电玻璃金属玻璃料填充，使得在集管引脚和沉积在硅晶片上的金属触点之间形成接触 。 操作使得当施加给定幅度的压力时，硅晶片上的接触将接触玻璃晶片上的金属接触迹线，因此将在第一金属迹线和第二金属迹线之间形成连接以产生低 两个迹线之间的阻抗路径，从而将硅晶片上的第一迹线连接到玻璃晶片上的第二迹线。 这在第一状态下产生高阻抗或开路，并且当压力超过阈值时，在第二状态下产生缓慢的阻抗或短路。

公开(公告)号：US20090007680A1

公开(公告)日：2009-01-08

申请号：US11825089

申请日：2007-07-03

申请人： Anthony D. Kurtz ,  Adam Kane

发明人： Anthony D. Kurtz ,  Adam Kane

IPC分类号： G01L9/06 ,  G01L9/04

CPC分类号： G01L9/0055

摘要： A high pressure transducer has an H shaped cross-section with a center arm of the H having a top and bottom surface with the top surface of the H accommodating four strain gauges. Two strain gauges are located at the center of the top portion of the center arm of the H and are positive strain gauges, while two strain gauges are located near the periphery of the center arm of the gauge. The bottom surface of the center arm of the gauge has an active area of a smaller diameter than the circular diameter of the center arm portion of the transducer. The smaller active area is surrounded by a thicker stepped area which surrounds an active area on the pressure side of the H shaped member. The surrounding stepped area enables one to position the two negative strain gauges on the opposite surface of the center arm and near the periphery to thereby cause the negative gauges to respond to a negative stresses and therefore to enable one to provide a full Wheatstone bridge which includes the two positive strain gauges located at the center of the center arm of the H and the two negative peripheral gauges.

摘要翻译： 高压传感器具有H形横截面，H的中心臂具有顶部和底部表面，H的顶部表面容纳四个应变计。 两个应变计位于H中心臂顶部的中心，是正应变片，而两个应变计位于仪表中心臂周边附近。 量规的中心臂的底面具有比换能器的中心臂部的圆形直径小的有效面积。 较小的活动区域被围绕H形构件的压力侧上的有效区域的较厚的台阶区域包围。 周围的阶梯区域使得能够将两个负应变计定位在中心臂的相对表面上并且在周边附近，从而使负的量规响应于负应力，并且因此使得能够提供一个完整的惠斯通电桥，其包括 位于H中心臂中心的两个正应变计和两个负外围量规。

公开(公告)号：US07462977B2

公开(公告)日：2008-12-09

申请号：US11100682

申请日：2005-04-07

申请人： Anthony D. Kurtz ,  Adam Kane ,  Andrew Schwartz

发明人： Anthony D. Kurtz ,  Adam Kane ,  Andrew Schwartz

IPC分类号： H01L41/08

CPC分类号： G01L9/006 ,  G01L9/06

摘要： A high temperature pressure transducer includes an extended tubular member having an opening from a front to a back surface. The tubular member is preferably fabricated from a metal. At the front end of the tubular member is a ceramic sensor face or tip which basically is a ceramic disk having a curved front surface and having an extending stem and which is inserted into the front opening of the tubular member. The column is of a given length and terminates in a back end. The back end has a predetermined portion which consists of two flat surfaces each on opposite sides. The back end containing the flat surfaces is thinner than the thickness of the column. On these flat surfaces are positioned suitable semiconductor piezoresistors. When a force is applied to the ceramic sensor face, it is transmitted axially through the tube or column where it is received by the sensors positioned on the flats. The sensors produce an output indicative of the force applied. The sensors may be arranged in a suitable bridge configuration.

摘要翻译： 高温压力传感器包括具有从前到后表面的开口的延伸的管状构件。 管状构件优选地由金属制成。 在管状构件的前端是陶瓷传感器面或尖端，其基本上是具有弯曲前表面并且具有延伸杆并且插入到管状构件的前开口中的陶瓷盘。 该列具有给定的长度并终止于后端。 后端具有预定的部分，其由相对侧上的两个平坦表面组成。 包含平坦表面的后端比柱的厚度薄。 在这些平坦表面上定位合适的半导体压敏电阻。 当力被施加到陶瓷传感器表面时，其被轴向地传递通过管或柱，其被定位在平面上的传感器所接收。 传感器产生指示施加的力的输出。 传感器可以布置成合适的桥结构。

公开(公告)号：US20080276712A1

公开(公告)日：2008-11-13

申请号：US11409139

申请日：2006-04-21

申请人： Anthony D. Kurtz ,  Tonghuo Shang ,  Adam M. Hurst

发明人： Anthony D. Kurtz ,  Tonghuo Shang ,  Adam M. Hurst

IPC分类号： G01L7/08

CPC分类号： G01L19/0007 ,  G01L19/0609 ,  G01L19/0636 ,  G01L19/0681

摘要： A pressure transducer for measuring pressures in high temperature environments employs a tube which is terminated at one end by an acoustic micro-filter. The acoustic filter or micro-filter has a plurality of apertures extending from one end to the other end, each aperture is of a small diameter as compared to the diameter of the transducer and the damper operates to absorb acoustic waves impinging on it with limited or no reflection. Mounted to the tube is a pressure transducer with a diaphragm flush with the inner wall of the tube. The tube is mounted in an aperture in a casing of a gas turbine operating at a high temperature. The hot gases propagate through the tube where the pressure of the gases are measured by the transducer coupled to the tube and where the acoustic filter operates to absorb acoustic waves impinging on it with little or no reflection, therefore enabling the pressure transducer to be mainly responsive to high frequency waves associated with the gas turbine operation.

摘要翻译： 用于在高温环境中测量压力的压力传感器采用在一端由声学微滤器端接的管。 声学滤波器或微滤器具有从一端延伸到另一端的多个孔，每个孔与换能器的直径相比具有小直径，并且阻尼器用于吸收以有限的或有限的方式撞击在其上的声波 没有反思。 安装在管上的是具有与管内壁齐平的隔膜的压力传感器。 该管安装在高温操作的燃气轮机壳体中的孔中。 热气体通过管传播，其中通过耦合到管的换能器测量气体的压力，并且其中声学滤波器操作以吸收几乎或不反射的入射到其上的声波，因此能够使压力传感器主要响应 与燃气轮机操作相关的高频波。

公开(公告)号：US07436037B2

公开(公告)日：2008-10-14

申请号：US11651796

申请日：2007-01-10

申请人： Anthony D. Kurtz ,  Alexander A. Ned

发明人： Anthony D. Kurtz ,  Alexander A. Ned

IPC分类号： H01L29/84

CPC分类号： G01L19/147

摘要： A differential pressure sensor has a semiconductor wafer having a top and bottom surface. The top surface of the wafer has a central active area containing piezoresistive elements. These elements are passivated and covered with a layer of silicon dioxide. Each element has a contact terminal associated therewith. The semiconductor wafer has an outer peripheral silicon frame surrounding the active area. The semiconductor wafer is bonded to a glass cover member via an anodic or electrostatic bond by bonding the outer peripheral frame to the periphery of the glass wafer. An inner silicon dioxide frame forms a compression bond with the glass wafer when the glass wafer is bonded to the silicon frame. This compression bond prevents deleterious fluids from entering the active area or destroying the silicon. The above described apparatus is mounted on a header such that through holes in the glass wafer are aligned with the header terminals. The header has pins which are directed from the header terminals to enable contact to be made to the unit. Both the top and bottom surfaces of the semiconductor wafer are coated with silicon dioxide which acts to protect all the elements from deleterious substances. Thus a first pressure is applied to one surface and a second pressure is applied to the other surface to enable differential operation.

摘要翻译： 差压传感器具有具有顶表面和底表面的半导体晶片。 晶片的顶表面具有包含压阻元件的中心活动区域。 这些元件被钝化并被一层二氧化硅覆盖。 每个元件具有与其相关联的接触端子。 半导体晶片具有围绕有源区域的外周硅框架。 通过将外周框架结合到玻璃晶片的周边，通过阳极或静电键将半导体晶片接合到玻璃盖构件。 当玻璃晶片结合到硅框架时，内部二氧化硅框架与玻璃晶片形成压缩结合。 这种压接键可防止有害流体进入活性区或破坏硅。 将上述装置安装在集管上，使得玻璃晶片中的通孔与集管端子对准。 插头具有从插头端子引导的引脚，以使得能够对该单元进行接触。 半导体晶片的顶表面和底表面均涂覆有二氧化硅，其用于保护所有元素免受有害物质的影响。 因此，第一压力施加到一个表面，并且第二压力施加到另一个表面以实现差动操作。

公开(公告)号：US07331241B1

公开(公告)日：2008-02-19

申请号：US11508089

申请日：2006-08-22

申请人： Anthony D. Kurtz ,  Scott Goodman

发明人： Anthony D. Kurtz ,  Scott Goodman

IPC分类号： G01L9/00

CPC分类号： G01L9/0055 ,  G01L9/0042 ,  G01L19/0084 ,  G01L19/147 ,  G01L19/148

摘要： A low cost sensor assembly for measuring oxygen pressures contains a transistor header. The transistor header has terminal pins extending therefrom. The transistor header co-acts with a first circuit insulator board. The first circuit board has deposited thereon four hand mirror shaped contact areas each one associated with one of the terminal pins of the transistor header. The top portion of each contact areas has an aperture with the extending arm of the area directed towards the center of the board. The board is epoxied to the transistor header with the terminal pins of the header extending into the apertures of the contact board. A second contact board is then epoxied to the first contact board. The second contact board has a series of four apertures located at the center. Each of the apertures of the second board contacts the handle portion of the mirror patterns of the first board. A leadless piezoresistor sensor assembly is then positioned and secured to the second board whereby the terminals from the sensor assembly align with each of the apertures in the second board. The terminals of the sensor assembly are apertures filled with a conductive glass metal frit and each filled aperture makes contact with a terminal of the sensor. The configuration has all conductive terminals of the entire device completely isolated and insulated from the oxygen environment, thus preventing ignition of the oxygen.

摘要翻译： 用于测量氧气压力的低成本传感器组件包含晶体管接头。 晶体管集管具有从其延伸的端子引脚。 晶体管头与第一电路绝缘板共同作用。 第一电路板已经沉积有四个手镜形接触区域，每个接触区域与晶体管集管的一个端子引脚相关联。 每个接触区域的顶部具有孔，该区域的延伸臂指向板的中心。 该板被环氧化为晶体管集管，插头的端子引脚延伸到接触板的孔中。 然后将第二接触板环氧化到第一接触板。 第二接触板具有位于中心的一系列四个孔。 第二板的每个孔都接触第一板的反射镜图案的手柄部分。 然后将无引线压敏电阻传感器组件定位并固定到第二板，由此来自传感器组件的端子与第二板中的每个孔对齐。 传感器组件的端子是填充有导电玻璃金属玻璃料的孔，并且每个填充的孔与传感器的端子接触。 该结构具有整个装置的所有导电端子完全隔离并与氧气环境绝缘，从而防止氧气点燃。

公开(公告)号：US20080011087A1

公开(公告)日：2008-01-17

申请号：US11478287

申请日：2006-06-29

申请人： Anthony D. Kurtz

发明人： Anthony D. Kurtz

IPC分类号： G01L19/04

CPC分类号： G01L9/0042

摘要： A high temperature pressure transducer is fabricated from silicon carbide. A wafer of silicon carbide has reduced or active areas which act as deflecting diaphragms. Positioned on the reduced or active area is a silicon carbide sensor. The sensor is secured to the silicon carbide wafer by a glass bond. The pressure transducer is fabricated by first epitaxially growing a layer of highly N-doped 3C silicon carbide on a first silicon wafer or substrate. A second wafer of silicon carbide is selected to be a carrier wafer. The carrier wafer is etched preferentially to produce the deflecting members or reduced areas which serve as diaphragms. The 3C material on the silicon slice is patterned appropriately to provide a series of individual piezoresistors which then may be interconnected to form a Wheatstone bridge. The two wafers are joined together using a high temperature glass frit, such as a pyroceram, with the various resistor elements appropriately placed over the deflecting members of the silicon carbide wafer. The silicon on the silicon wafer is removed and various metallic contacts and interconnects are formed on the 3C silicon carbide resistor network.

摘要翻译： 高温压力传感器由碳化硅制成。 碳化硅晶片具有减小的或有效的区域，其作为偏转膜片。 位于还原或有源区域的是碳化硅传感器。 传感器通过玻璃粘合固定在碳化硅晶片上。 通过在第一硅晶片或衬底上首先外延生长高N掺杂的3C碳化硅的层来制造压力传感器。 碳化硅的第二晶片被选择为载体晶片。 优先蚀刻载体晶片以产生用作隔膜的偏转构件或缩小区域。 硅片上的3C材料被适当地图案化以提供一系列单独的压敏电阻器，然后其可以互连以形成惠斯通电桥。 使用高温玻璃料（例如热解油）将两个晶片连接在一起，其中各种电阻元件适当地放置在碳化硅晶片的偏转构件上。 去除硅晶片上的硅，并在3C碳化硅电阻网络上形成各种金属触点和互连。

公开(公告)号：US07284444B2

公开(公告)日：2007-10-23

申请号：US11322721

申请日：2005-12-30

申请人： Anthony D. Kurtz ,  Adam Kane ,  Louis DeRosa

发明人： Anthony D. Kurtz ,  Adam Kane ,  Louis DeRosa

IPC分类号： G01L1/00

CPC分类号： G01B7/18 ,  G01L1/2231

摘要： A hermetically sealed displacement sensor has strain gauges placed on thin flexible triangular shaped beams of a load beam cell. The strain gauges are enclosed in a hermetically sealed cavity which cavity is sealed by means of a cover plate placed over the load beam cell. The thin beams are connected together by a center hub and basically form two constant moment beams. There is a top isolation diaphragm member which is convoluted and to which a force is applied which applied force is transmitted to the thin flexible beams. The beams deflect and the sensors produce an output proportional to strain. The sensors on each beam are two in number wherein one sensor is placed in a longitudinal direction with respect to the beam while the other sensor is in a transverse position. The sensors may be wired to form a full Wheatstone bridge or half bridges may be employed. The electrical output from the strain gauge bridge is proportional to the deflection of the center of the sensor.

摘要翻译： 密封位移传感器具有放置在负载梁单元的薄柔性三角形梁上的应变计。 应变计被封闭在密封的空腔中，该空腔通过放置在负载梁单元上的盖板密封。 薄梁通过中心毂连接在一起，基本上形成两个恒定力矩梁。 存在顶部的隔离膜构件，其被卷绕并且施加力，施加的力被传递到薄柔性梁。 光束偏转，传感器产生与应变成比例的输出。 每个光束上的传感器是两个，其中一个传感器相对于光束被放置在纵向方向上，而另一个传感器处于横向位置。 传感器可以被布线以形成完整的惠斯登电桥，或者可以采用半桥。 应变仪桥的电气输出与传感器中心的偏转成正比。

公开(公告)号：US07124639B1

公开(公告)日：2006-10-24

申请号：US11157615

申请日：2005-06-21

申请人： Anthony D. Kurtz ,  Alexander A. Ned

发明人： Anthony D. Kurtz ,  Alexander A. Ned

IPC分类号： G01L19/04

CPC分类号： G01L19/0084 ,  G01L9/0055

摘要： An ultra high temperature hermetically protected transducer includes a sensor chip having an active area upon which is deposited piezoresistive sensing elements. The elements are located on the top surface of the silicon wafer chip and have leads and terminals extending from the active area of the chip. The active area is surrounded with an extending rim or frame. The active area is coated with an oxide layer which passivates the piezoresistive sensing network. The chip is then attached to a glass pedestal, which is larger in size than the sensor chip. The glass pedestal has a through hole or aperture at each corner. The entire composite structure is then mounted onto a high temperature header with the metallized regions of the header being exposed to the holes in the glass pedestal; a high temperature lead is then bonded directly to the metallized contact area of the sensor chip at one end. The leads are of sufficient length to extend into the through holes in the glass pedestal. A sealing cover is then attached to the entire composite sensor to hermetically seal all of the interconnections. The sealing cover is a glass structure, has a central aperture which corresponds to the aperture formed by the frame, allowing the active area of the sensor to be exposed to the pressure medium. The sealing cover is bonded to the periphery of the rim and to the glass supporting pedestal.

摘要翻译： 超高温密封保护换能器包括具有有源区域的传感器芯片，在该有源区域上形成压电感测元件。 这些元件位于硅晶片芯片的顶表面上并且具有从芯片的有源区域延伸的引线和端子。 活动区域被延伸的边缘或框架包围。 有源区域涂覆有钝化压阻感测网络的氧化物层。 然后将芯片连接到玻璃基座，其尺寸大于传感器芯片。 玻璃基座在每个角落都有一个通孔或孔。 然后将整个复合结构安装到高温集管上，其中集管的金属化区域暴露于玻璃基座中的孔; 然后将高温引线一端直接粘合到传感器芯片的金属化接触区域。 引线具有足够的长度以延伸到玻璃基座中的通孔中。 然后将密封盖连接到整个复合传感器以密封所有的互连。 密封盖是玻璃结构，具有对应于由框架形成的孔的中心孔，允许传感器的有效区域暴露于压力介质。 密封盖结合到边缘的周边和玻璃支撑基座上。

公开(公告)号：US06900108B2

公开(公告)日：2005-05-31

申请号：US10463890

申请日：2003-06-18

申请人： Anthony D. Kurtz ,  Alexander A. Ned

发明人： Anthony D. Kurtz ,  Alexander A. Ned

IPC分类号： G01K7/00 ,  G01K7/22 ,  H01L21/76

CPC分类号： G01K7/226 ,  G01K7/003 ,  Y10S438/931 ,  Y10S438/977

摘要： Semiconductor devices useful in high temperature sensing applications include a silicon carbide substrate, a silicon dioxide layer, and an outer layer of crystalline doped silicon carbide. The device is a 3C—SiC/SiO2/SiC structure. This structure can be employed to fabricate high temperature devices such as piezoresistive sensors, minority carrier devices and so on. The crystalline doped silicon carbide is dielectrically isolated from the substrate. The devices are formed by processes that include bonding a pattern wafer to a substrate wafer, selective oxidation and removal of undoped silicon, and conversion of doped silicon to crystalline silicon carbide. The level of doping and the crystalline structure of the silicon carbide can be selected according to desired properties for particular applications.

摘要翻译： 可用于高温感测应用的半导体器件包括碳化硅衬底，二氧化硅层和晶体掺杂碳化硅的外层。 该器件是3C-SiC / SiO 2 / SiC结构。 该结构可用于制造诸如压阻传感器，少数载流子装置等的高温装置。 晶体掺杂碳化硅与衬底介电隔离。 器件由包括将图案晶片结合到衬底晶片，选择性氧化和去除未掺杂硅的工艺形成，以及将掺杂硅转化为结晶碳化硅。 可以根据特定应用的所需性质来选择掺杂水平和碳化硅的晶体结构。