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公开(公告)号：US10741435B2
公开(公告)日：2020-08-11
申请号：US16393357
申请日：2019-04-24
发明人： Susmit Singha Roy , Yihong Chen , Kelvin Chan , Abhijit Basu Mallick , Srinivas Gandikota , Pramit Manna
IPC分类号： H01L21/32 , H01L21/762 , H01L21/28 , H01L21/8234 , H01L29/43
摘要： Methods comprising forming a film on at least one feature of a substrate surface are described. The film is expanded to fill the at least one feature and cause growth of the film from the at least one feature. Methods of forming self-aligned vias are also described.
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公开(公告)号：US20200227275A1
公开(公告)日：2020-07-16
申请号：US16831251
申请日：2020-03-26
发明人： Amrita B. Mullick , Abhijit Basu Mallick , Srinivas Gandikota , Susmit Singha Roy , Yingli Rao , Regina Freed , Uday Mitra
IPC分类号： H01L21/3213 , H01L21/311 , H01L21/02 , H01L21/306
摘要： Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.
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公开(公告)号：US20200027785A1
公开(公告)日：2020-01-23
申请号：US16583749
申请日：2019-09-26
IPC分类号： H01L21/768 , H01L21/02 , H01L27/11582 , H01L27/11556 , H01L23/528 , H01L21/285 , H01L23/532 , H01L21/311
摘要： Methods of dep-etch in semiconductor devices (e.g. V-NAND) are described. A metal layer is deposited in a feature. The metal layer is removed by low temperature atomic layer etching by oxidizing the surface of the metal layer and etching the oxide in a layer-by-layer fashion. After removal of the metal layer, the features are filled with a metal.
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公开(公告)号：US10410869B2
公开(公告)日：2019-09-10
申请号：US15633366
申请日：2017-06-26
发明人： Susmit Singha Roy , Kelvin Chan , Hien Minh Le , Sanjay Kamath , Abhijit Basu Mallick , Srinivas Gandikota , Karthik Janakiraman
IPC分类号： C23C16/06 , H01L21/3205 , C23C16/505 , H01L21/285 , H01L21/02 , H01L21/768 , C23C16/02 , C23C16/40 , C23C28/00 , H01L27/11582
摘要： Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.
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公开(公告)号：US10403542B2
公开(公告)日：2019-09-03
申请号：US16003827
申请日：2018-06-08
IPC分类号： H01L21/768 , H01L21/311 , H01J37/32 , H01L23/532
摘要： A first metallization layer comprises a set of first conductive lines that extend along a first direction on a first dielectric layer on a substrate. Pillars are formed on recessed first dielectric layers and a second dielectric layer covers the pillars. A dual damascene etch provides a contact hole through the second dielectric layer and an etch removes the pillars to form air gaps.
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公开(公告)号：US10403502B2
公开(公告)日：2019-09-03
申请号：US15882204
申请日：2018-01-29
IPC分类号： H01L21/033 , H01L21/02 , C23C16/50 , C23C16/34 , H01L21/311 , C23C16/02 , C23C16/32 , C23C16/505
摘要： Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of hardmask films on a substrate. In one implementation, a method of forming a hardmask layer on a substrate is provided. The method comprises forming a seed layer on a substrate by supplying a seed layer gas mixture in a processing chamber. The method further includes forming a transition layer comprising tungsten, boron and carbon on the seed layer by supplying a transition layer gas mixture in the processing chamber. The method further includes forming a bulk hardmask layer comprising tungsten, boron and carbon on the transition layer by supplying a main deposition gas mixture in the processing chamber.
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公开(公告)号：US20190259652A1
公开(公告)日：2019-08-22
申请号：US16393357
申请日：2019-04-24
发明人： Susmit Singha Roy , Yihong Chen , Kelvin Chan , Abhijit Basu Mallick , Srinivas Gandikota , Pramit Manna
IPC分类号： H01L21/762 , H01L29/43 , H01L21/28 , H01L21/32 , H01L21/8234
摘要： Methods comprising forming a film on at least one feature of a substrate surface are described. The film is expanded to fill the at least one feature and cause growth of the film from the at least one feature. Methods of forming self-aligned vias are also described.
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公开(公告)号：US20240332028A1
公开(公告)日：2024-10-03
申请号：US18192549
申请日：2023-03-29
IPC分类号： H01L21/3105 , H01J37/32 , H01L21/02
CPC分类号： H01L21/31051 , H01J37/32816 , H01L21/02164 , H01L21/02271 , H01J2237/336
摘要： Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the semiconductor processing chamber. The methods may include forming a silicon-containing material on the substrate. The silicon-containing material may be characterized by a stress of greater than or about −200 MPa. The methods may include annealing the substrate at a temperature of greater than or about 700° C.
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公开(公告)号：US20240234127A1
公开(公告)日：2024-07-11
申请号：US18615539
申请日：2024-03-25
发明人： Xinke Wang , Bhaskar Jyoti Bhuyan , Zeqing Shen , Susmit Singha Roy , Abhijit Basu Mallick , Jiecong Tang , John Sudijono , Mark Saly
CPC分类号： H01L21/02118 , C23C16/04 , C23C16/26 , C23C16/56 , H01L21/02205 , H01L21/0228 , H01L21/02304
摘要： Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate. The methods may include pre-treating the metal surface of the substrate to form a metal oxide surface on the metal surface.
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公开(公告)号：US11990369B2
公开(公告)日：2024-05-21
申请号：US17407504
申请日：2021-08-20
IPC分类号： H01L21/768 , H01L21/02 , H01L21/311 , B05D1/00
CPC分类号： H01L21/76877 , H01L21/02118 , H01L21/31133 , H01L21/76834 , H01L21/76837 , B05D1/60 , B05D1/62
摘要： Exemplary methods of semiconductor processing may include forming a layer of carbon-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The substrate may include an exposed region of a first dielectric material and an exposed region of a metal-containing material. The layer of carbon-containing material may be selectively formed over the exposed region of the metal-containing material. Forming the layer of carbon-containing material may include one or more cycles of providing a first molecular species that selectively couples with the metal-containing material. Forming the layer of carbon-containing material may include providing a second molecular species that selectively couples with the first molecular species. The methods may include selectively depositing a second dielectric material on the exposed region of the first dielectric material.
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