公开(公告)号：US20060083750A1

公开(公告)日：2006-04-20

申请号：US11123873

申请日：2005-05-05

申请人： John Edwards ,  Scott Filler ,  Donald Sheppard ,  Ashraf Ibrahim ,  Yue Fu ,  Brad Spellberg ,  Michael Yeaman

发明人： John Edwards ,  Scott Filler ,  Donald Sheppard ,  Ashraf Ibrahim ,  Yue Fu ,  Brad Spellberg ,  Michael Yeaman

IPC分类号： A61K39/00 ,  C12N1/18

CPC分类号： A61K39/0002 ,  A61K38/00 ,  A61K39/00 ,  A61K2039/505 ,  C07K14/40 ,  C07K16/14

摘要： The invention provides a vaccine including an isolated Als protein family member having cell adhesion activity, or an immunogenic fragment thereof, with an adjuvant in a pharmaceutically acceptable medium. The invention also provides a method of treating or preventing disseminated candidiasis. The method includes administering an immunogenic amount of a vaccine an isolated Als protein family member having cell adhesion activity, or an immunogenic fragment thereof, in a pharmaceutically acceptable medium. A method of treating or preventing disseminated candidiasis also is provided that includes administering an effective amount of an isolated Als protein family member having cell adhesion activity, or an functional fragment thereof, to inhibit the binding or invasion of Candida to a host cell or tissue. The Als protein family member can be derived from a Candida strain selected from the group consisting of Candida albicans, Candida krusei, Candida tropicalis, Candida glabrata and Candida parapsilosis and the Als protein family member includes Als1p, Als3p, Als5p, Als6p, Als7p or Als9p.

摘要翻译： 本发明提供了包含具有细胞粘附活性的分离的Als蛋白家族成员或其免疫原性片段的疫苗，其在药学上可接受的培养基中与佐剂一起使用。 本发明还提供了治疗或预防弥漫性念珠菌病的方法。 该方法包括在药学上可接受的培养基中施用免疫原性量的具有细胞粘附活性的分离的Als蛋白家族成员或其免疫原性片段的疫苗。 还提供了治疗或预防弥漫性念珠菌病的方法，其包括施用有效量的具有细胞粘附活性的分离的Als蛋白家族成员或其功能片段，以抑制念珠菌与宿主细胞或组织的结合或侵入。 Als蛋白家族成员可以衍生自选自白色念珠菌，克罗斯假丝酵母，热带假丝酵母，光滑假丝酵母和副假丝酵母的念珠菌菌株，Als蛋白家族成员包括Als1p，Als3p，Als5p，Als6p，Als7p或Als9p 。

公开(公告)号：US11107755B2

公开(公告)日：2021-08-31

申请号：US16871026

申请日：2020-05-10

申请人： Zhanming Li ,  Yue Fu ,  Yan-Fei Liu

发明人： Zhanming Li ,  Yue Fu ,  Yan-Fei Liu

IPC分类号： H01L23/495 ,  H01L23/00

摘要： Packaging methods and structures for lateral high voltage gallium nitride (GaN) devices achieve electrical isolation while also maintaining thermal dissipation. The electrical isolation reduces or eliminates vertical leakage current, improving high voltage performance. The packages may use or be compatible standards such as JEDEC, which reduces packaging cost and facilitates implementation of the packaged devices in conventional circuit design approaches.

公开(公告)号：US20190379374A1

公开(公告)日：2019-12-12

申请号：US16423138

申请日：2019-05-27

申请人： Zhanming Li ,  Yan-Fei Liu ,  Yue Fu ,  Wai Tung Ng

发明人： Zhanming Li ,  Yan-Fei Liu ,  Yue Fu ,  Wai Tung Ng

IPC分类号： H03K17/30 ,  H03K17/06 ,  H03K17/22

摘要： A gate driver circuit for a gallium nitride (GaN) power transistor includes a RS-flipflop that receives a first pulse train at an S input terminal and a second pulse train at an R input terminal, and produces an output pulse train, and an amplifier that amplifies the output pulse train and produces a gate driver signal for the GaN power transistor. The RS-flipflop and the amplifier may be implemented together on a GaN monolithic integrated circuit, optionally together with the GaN power transistor. The GaN power transistor may be a high-side switch of a half-bridge circuit. The RS-flipflop may be implemented with enhancement mode and depletion mode GaN high electron mobility transistors (HEMTs). Embodiments avoid drawbacks of prior hybrid (e.g., silicon-GaN) approaches, such as parasitic inductances from bonding wires and on-board metal traces, especially at high operating frequencies, as well as reduce implementation cost and improve performance.

公开(公告)号：US20140070169A1

公开(公告)日：2014-03-13

申请号：US14025511

申请日：2013-09-12

申请人： Chongwu Zhou ,  Jialu Zhang ,  Chuan Wang ,  Yue Fu

发明人： Chongwu Zhou ,  Jialu Zhang ,  Chuan Wang ,  Yue Fu

IPC分类号： H01L27/32

CPC分类号： H01L27/3274 ,  B82Y15/00 ,  B82Y30/00 ,  H01L51/0048 ,  H01L51/0545

摘要： A separated carbon nanotube-based active matrix organic light-emitting diode (AMOLED) device including a substrate and transistors. Each transistor includes an individual back gate patterned on the substrate and a gate dielectric layer disposed over the substrate. An active channel including a network of separated semiconducting nanotubes is disposed over a functionalized surface of the gate dielectric layer. A source contact and a drain contact are formed on two ends of the active channel, with the network of separated nanotubes between the source contact and the drain contact. An organic light-emitting diode (OLED) display device is coupled to the drain of one of the transistors. A system includes a display control circuit having a substrate, with scan lines, data lines, and AMOLED devices formed on the substrate, with each AMOLED device coupled to one of the scan lines and one of the data lines.

摘要翻译： 一种分离的基于碳纳米管的有源矩阵有机发光二极管（AMOLED）器件，包括衬底和晶体管。 每个晶体管包括在衬底上图案化的单个背栅和设置在衬底上的栅介质层。 包括分离的半导体纳米管的网络的有源沟道被布置在栅极电介质层的功能化表面上。 源极触点和漏极触点形成在有源沟道的两端，分离的纳米管网络在源极触点和漏极触点之间。 有机发光二极管（OLED）显示装置耦合到晶体管之一的漏极。 一种系统包括具有衬底的显示控制电路，其中形成有衬底上的扫描线，数据线和AMOLED器件，每个AMOLED器件耦合到扫描线之一和数据线之一。

公开(公告)号：US07851857B2

公开(公告)日：2010-12-14

申请号：US12182398

申请日：2008-07-30

申请人： Yue Fu ,  Ronghua Zhu ,  Vishnu K. Khemka ,  Amitava Bose ,  Todd C. Roggenbauer

发明人： Yue Fu ,  Ronghua Zhu ,  Vishnu K. Khemka ,  Amitava Bose ,  Todd C. Roggenbauer

IPC分类号： H01L29/78 ,  H01L29/76 ,  H01L21/336

CPC分类号： H01L29/7816 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/41775 ,  H01L29/4238 ,  H01L29/66681

摘要： A dual current path LDMOSFET transistor (40) is provided which includes a substrate (400), a graded buried layer (401), an epitaxial drift region (404) in which a drain region (416) is formed, a first well region (406) in which a source region (412) is formed, a gate electrode (420) formed adjacent to the source region (412) to define a first channel region (107), and a current routing structure that includes a buried RESURF layer (408) in ohmic contact with a second well region (414) formed in a predetermined upper region of the epitaxial layer (404) so as to be completely covered by the gate electrode (420), the current routing structure being spaced apart from the first well region (406) and from the drain region (416) on at least a side of the drain region to delineate separate current paths from the source region and through the epitaxial layer.

摘要翻译： 提供了双电流路径LDMOSFET晶体管（40），其包括衬底（400），渐变埋层（401），其中形成有漏极区（416）的外延漂移区（404），第一阱区 406），其中形成源区（412），与源极区（412）相邻形成以限定第一沟道区（107）的栅极（420），以及包括埋置的RESURF层的电流布线结构 408）与形成在外延层（404）的预定上部区域中的第二阱区域（414）欧姆接触，以便被栅电极（420）完全覆盖，电流布线结构与第一 阱区域（406）和漏极区域（416）之间的区域，以描绘与源极区域和通过外延层的分离的电流路径。

公开(公告)号：US20100025756A1

公开(公告)日：2010-02-04

申请号：US12182398

申请日：2008-07-30

申请人： Yue Fu ,  Ronghua Zhu ,  Vishnu K. Khemka ,  Amitava Bose ,  Todd C. Roggenbauer

发明人： Yue Fu ,  Ronghua Zhu ,  Vishnu K. Khemka ,  Amitava Bose ,  Todd C. Roggenbauer

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7816 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/41775 ,  H01L29/4238 ,  H01L29/66681

摘要： A dual current path LDMOSFET transistor (40) is provided which includes a substrate (400), a graded buried layer (401), an epitaxial drift region (404) in which a drain region (416) is formed, a first well region (406) in which a source region (412) is formed, a gate electrode (420) formed adjacent to the source region (412) to define a first channel region (107), and a current routing structure that includes a buried RESURF layer (408) in ohmic contact with a second well region (414) formed in a predetermined upper region of the epitaxial layer (404) so as to be completely covered by the gate electrode (420), the current routing structure being spaced apart from the first well region (406) and from the drain region (416) on at least a side of the drain region to delineate separate current paths from the source region and through the epitaxial layer.

摘要翻译： 提供了双电流路径LDMOSFET晶体管（40），其包括衬底（400），渐变埋层（401），其中形成有漏极区（416）的外延漂移区（404），第一阱区 406），其中形成源区（412），与源极区（412）相邻形成以限定第一沟道区（107）的栅极（420），以及包括埋置的RESURF层的电流布线结构 408）与形成在外延层（404）的预定上部区域中的第二阱区（414）欧姆接触，以便被栅电极（420）完全覆盖，电流布线结构与第一 阱区域（406）和漏极区域（416）之间的区域，以描绘与源极区域和通过外延层的分离的电流路径。

公开(公告)号：US20070077256A1

公开(公告)日：2007-04-05

申请号：US11327197

申请日：2006-01-06

申请人： John Edwards ,  Ashraf Ibrahim ,  Brad Spellberg ,  Yue Fu ,  Scott Filler ,  Michael Yeaman

发明人： John Edwards ,  Ashraf Ibrahim ,  Brad Spellberg ,  Yue Fu ,  Scott Filler ,  Michael Yeaman

IPC分类号： A61K39/02

CPC分类号： A61K39/0002 ,  A61K39/085 ,  A61K2039/5156 ,  A61K2039/58 ,  C07K16/14 ,  C07K2317/76

摘要： The invention provides a vaccine including an isolated Als protein family member having cell adhesion activity, or an immunogenic fragment thereof, with an adjuvant in a pharmaceutically acceptable medium. The invention also provides a method of treating or preventing hematogenously disseminated or mucocutaneous candidiasis. The method includes administering an immunogenic amount of a vaccine an isolated Als protein family member having cell adhesion activity, or an immunogenic fragment thereof, in a pharmaceutically acceptable medium. A method of treating or preventing disseminated candidiasis also is provided that includes administering an effective amount of an isolated Als protein family member having cell adhesion activity, or an functional fragment thereof, to inhibit the binding or invasion of Candida to a host cell or tissue. The Als protein family member can be derived from a Candida strain selected from the group consisting of Candida albicans, Candida krusei, Candida tropicalis, Candida glabrata and Candida parapsilosis and the Als protein family member includes Als1p, Als3p, Als5p, Als6p, Als7p or Als9p. Also provided is a method of treating or preventing Staphylococcus aureus infections. The method includes administering an immunogenic amount of a vaccine an isolated Als protein family member having cell adhesion activity, or an immunogenic fragment thereof, in a pharmaceutically acceptable medium.

摘要翻译： 本发明提供了包含具有细胞粘附活性的分离的Als蛋白家族成员或其免疫原性片段的疫苗，其在药学上可接受的培养基中与佐剂一起使用。 本发明还提供了治疗或预防血液弥漫性或粘膜皮肤念珠菌病的方法。 该方法包括在药学上可接受的培养基中施用免疫原性量的具有细胞粘附活性的分离的Als蛋白家族成员或其免疫原性片段的疫苗。 还提供了治疗或预防弥漫性念珠菌病的方法，其包括施用有效量的具有细胞粘附活性的分离的Als蛋白家族成员或其功能片段，以抑制念珠菌与宿主细胞或组织的结合或侵入。 Als蛋白家族成员可以衍生自选自白色念珠菌，克罗斯假丝酵母，热带假丝酵母，光滑假丝酵母和副假丝酵母的念珠菌菌株，Als蛋白家族成员包括Als1p，Als3p，Als5p，Als6p，Als7p或Als9p 。 还提供了治疗或预防金黄色葡萄球菌感染的方法。 该方法包括在药学上可接受的培养基中施用免疫原性量的具有细胞粘附活性的分离的Als蛋白家族成员或其免疫原性片段的疫苗。

公开(公告)号：US20050024803A1

公开(公告)日：2005-02-03

申请号：US10902356

申请日：2004-07-27

申请人： Jianping Ying ,  Teng Liu ,  Xingkuan Guo ,  Jianhong Zeng ,  Yue Fu

发明人： Jianping Ying ,  Teng Liu ,  Xingkuan Guo ,  Jianhong Zeng ,  Yue Fu

IPC分类号： H02M1/34 ,  H02M3/335 ,  H02H3/26

CPC分类号： H02M1/34 ,  H02M3/33576 ,  H02M2001/342 ,  Y02B70/1491

摘要： An energy-feedback clamping circuit of a power converter is proposed. The converter includes a transformer coupled to a full-wave rectifier circuit. The clamping circuit includes: two clamping diodes having two anodes coupled to each other at a common-anode terminal and two cathodes coupled to two terminals of a secondary winding of the transformer, a first clamping capacitor having a first terminal coupled to a cathode of a first rectifying diode of the rectifier circuit and a second terminal coupled to the common-anode terminal, a second clamping capacitor having a first terminal coupled to a connecting node of the output filtering inductor and capacitor of the rectifier circuit and a second terminal coupled to the common-anode terminal, and a converter circuit having an input terminal coupled to the second clamping capacitor and an output terminal for offering a power source.

摘要翻译： 提出了一种功率转换器的能量反馈钳位电路。 该转换器包括耦合到全波整流电路的变压器。 钳位电路包括：两个钳位二极管，其具有在共阳极端子处彼此耦合的两个阳极和耦合到变压器的次级绕组的两个端子的两个阴极;第一钳位电容器，具有耦合到 整流电路的第一整流二极管和耦合到共阳极端子的第二端子，第二钳位电容器，其具有耦合到输出滤波电感器和整流器电路的电容器的连接节点的第一端子，以及耦合到整流电路的第二端子 公共阳极端子和具有耦合到第二钳位电容器的输入端子的转换器电路和用于提供电源的输出端子。

公开(公告)号：US10939553B2

公开(公告)日：2021-03-02

申请号：US16254296

申请日：2019-01-22

申请人： Zhanming Li ,  Yan-Fei Liu ,  Yue Fu ,  Wai Tung Ng

发明人： Zhanming Li ,  Yan-Fei Liu ,  Yue Fu ,  Wai Tung Ng

IPC分类号： H01L27/18 ,  H05K1/18 ,  H01L23/31 ,  H01L23/34 ,  H01L29/20 ,  H01L29/778 ,  H05K1/02 ,  H05K1/11

摘要： A packaged GaN semiconductor device with improved heat dissipation is provided. A GaN device is packaged on a printed circuit board (PCB) with a vertical side of the device, and optionally the back side of the device, in thermal contact with the PCB. The packaging is compatible with surface mount technologies such as land grid array (LGA), ball grid array (BGA), and other formats. Thermal contact between the PCB and a vertical side of the device, and optionally the back side of the device, is made through solder. The solder used for the thermal contact may also connect a source terminal of the device, which also improves electrical stability of the device. The packaging is particularly suitable for GaN HEMT devices.

公开(公告)号：US10686436B2

公开(公告)日：2020-06-16

申请号：US16454078

申请日：2019-06-27

申请人： Zhanming Li ,  Yue Fu ,  Yan-Fei Liu

发明人： Zhanming Li ,  Yue Fu ,  Yan-Fei Liu

IPC分类号： H03F1/30 ,  H03K17/06 ,  H01L29/20 ,  H01L29/778 ,  H01L27/06 ,  H02M1/08 ,  H03K17/081 ,  H01L27/02 ,  H02M3/335

摘要： Voltage stabilizing and voltage regulating circuits implemented in GaN HEMT technology provide stable output voltages suitable for use in applications such as GaN power transistor gate drivers and low voltage auxiliary power supplies for GaN integrated circuits. Gate driver and voltage regulator modules include at least one GaN D-mode HEMT (DHEMT) and at least two GaN E-mode HEMTs (EHEMTs) connected together in series, so that the at least one DHEMT operates as a variable resistor and the at least two EHEMTs operate as a Zener diode that limits the output voltage. The gate driver and voltage regulator modules may be implemented as a GaN integrated circuits, and may be monolithically integrated together with other components such as amplifiers and power HEMTs on a single die to provide a GaN HEMT power module IC.