公开(公告)号：US07226817B2

公开(公告)日：2007-06-05

申请号：US10330015

申请日：2002-12-27

申请人： Yoshifumi Tanada ,  Atsuo Isobe ,  Hiroshi Shibata ,  Shunpei Yamazaki

发明人： Yoshifumi Tanada ,  Atsuo Isobe ,  Hiroshi Shibata ,  Shunpei Yamazaki

IPC分类号： H01L21/00

CPC分类号： H01L21/02683 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/04 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78675

摘要： A method of efficiently forming a circuit using a thin film transistor with a semiconductor layer in which preferable crystallinity is obtained is provided. A location on which stress concentrates according to crystallization of a semiconductor layer formed on a substrate having unevenness corresponds to the edges and their vicinities of the unevenness provided on the substrate, that is, the boundary between a concave portion and a convex portion and its vicinities. Thus, the location in which stress concentration is caused can be specified and controlled according to the shape of a slit-shaped base layer. In addition, an island-like semiconductor layer (1305) which becomes the active layer of a TFT is formed on the concave portion or the convex portion of the substrate having the unevenness. At this time, at least a portion which becomes the channel formation region of the TFT is formed without crossing the boundary between the concave portion and the convex portion. Such TFTs are used in parallel to construct a TFT having a large channel width so that fluctuation in electrical characteristics is averaged.

摘要翻译： 提供一种利用具有优选结晶度的半导体层的薄膜晶体管有效地形成电路的方法。 根据形成在具有凹凸的基板上的半导体层的结晶应力集中的位置对应于设置在基板上的凹凸的边缘及其附近，即凹部与凸部之间的边界及其附近 。 因此，可以根据狭缝状基层的形状来规定和控制应力集中的位置。 此外，在具有凹凸的基板的凹部或凸部上形成成为TFT的有源层的岛状半导体层（1305）。 此时，成为TFT的沟道形成区域的至少一部分形成为不与凹部和凸部之间的边界交叉。 并联使用这样的TFT构成具有较大沟道宽度的TFT，使得电特性的波动平均化。

公开(公告)号：US07129521B2

公开(公告)日：2006-10-31

申请号：US10406591

申请日：2003-04-04

申请人： Hiroshi Shibata ,  Osamu Nakamura ,  Shunichi Naka ,  Tohru Ueda

发明人： Hiroshi Shibata ,  Osamu Nakamura ,  Shunichi Naka ,  Tohru Ueda

IPC分类号： H01L29/04 ,  H01L29/15

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/1214 ,  H01L27/1274 ,  H01L29/04 ,  H01L29/66757

摘要： The problem is to provide a technology to reduce a light leakage current in order to obtain a good display. One kind or plurality kinds of elements chosen from argon, germanium, silicon, helium, neon, krypton, and xenon are implanted in a crystalline semiconductor layer, to distribute crystal defects due to the aforementioned element implantation by uniform and suitable density in the semiconductor film, making recombination centers of carriers, to thereby suppress alight sensitivity without spoiling a high degree of carrier movement included in a crystalline semiconductor layer.

摘要翻译： 问题在于提供减少漏光电流的技术，以获得良好的显示。 将选自氩，锗，硅，氦，氖，氪和氙的一种或多种元素注入晶体半导体层中，以通过均匀且适当的密度在半导体膜中分配由于上述元素注入引起的晶体缺陷 ，使载流子的复合中心，从而抑制光敏灵敏度而不破坏包括在晶体半导体层中的高度的载流子移动。

公开(公告)号：US07129121B2

公开(公告)日：2006-10-31

申请号：US11159278

申请日：2005-06-23

申请人： Munehiro Azami ,  Chiho Kokubo ,  Aiko Shiga ,  Atsuo Isobe ,  Hiroshi Shibata ,  Shunpei Yamazaki

发明人： Munehiro Azami ,  Chiho Kokubo ,  Aiko Shiga ,  Atsuo Isobe ,  Hiroshi Shibata ,  Shunpei Yamazaki

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/336 ,  H01L21/8234

CPC分类号： H01L21/02678 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L27/1285 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78675

摘要： A method for manufacturing a semiconductor device having steps of forming an amorphous semiconductor on a substrate having an insulating surface; patterning the amorphous semiconductor to form plural first island-like semiconductors; irradiating a linearly condensed laser beam on the plural first island-like semiconductors while relatively scanning the substrate, thus crystallizing the plural first island-like semiconductors; patterning the plural first island-like semiconductors that have been crystallized to form plural second island-like semiconductors; forming plural transistors using the plural second island-like semiconductors; and forming a unit circuit using a predetermined number of the transistors, where the second island-like semiconductors used for the predetermined number of the transistors are formed from the first island-like semiconductors that are different from each other.

公开(公告)号：US20060196649A1

公开(公告)日：2006-09-07

申请号：US10559318

申请日：2003-06-05

申请人： Hiroshi Shibata ,  Takuya Murayama

发明人： Hiroshi Shibata ,  Takuya Murayama

IPC分类号： F28F3/00

CPC分类号： F28D9/0037 ,  F28F3/04 ,  F28F9/001 ,  F28F21/065

摘要： A heat exchanger having light weight and an excellent recycling property and capable of exhibiting high sealing property of an air flow passage without using an adhesive agent. This heat exchanger is configured by alternately laminating heat transfer plates A and heat transfer plates B which are respectively integrated by vacuum molding a polystyrene sheet into heat transfer surface, air flow passage rib, air flow passage end surface, groove A, protrusion, outer peripheral rib A, outer peripheral rib B, air flow passage end surface cover, and a groove B. The groove A is brought into close contact with the groove B, upper surfaces of the outer peripheral rib A and the outer peripheral rib B are brought into close contact with the heat transfer plate, the protrusion is brought into close contact with the outer peripheral rib B and the groove B, the air flow passage end surface is brought into contact with the outer peripheral rib B, the air flow passage end surface cover is brought into contact with the end surfaces of the outer peripheral rib A and the outer peripheral rib B, and the side surfaces of the outer peripheral rib A are brought into contact with each other.

摘要翻译： 一种热交换器，其重量轻且回收性能优异，能够在不使用粘合剂的情况下表现出高的气流通道密封性。 该热交换器通过交替层叠传热板A和传热板B，传热板B和传热板B分别通过真空成型聚苯乙烯片而形成传热面，气流通道肋，气流通道端面，槽A，突出部，外周 肋A，外周肋B，空气流路端面罩和槽B.槽A与槽B紧密接触，使外周肋A和外周肋B的上表面进入 与传热板紧密接触，突起与外周肋B和槽B紧密接触，使空气流通端面与外周肋B接触，气流通道端面盖 与外周肋A和外周肋B的端面接触，外周肋A的侧面与eac接触 h其他。

公开(公告)号：US06933527B2

公开(公告)日：2005-08-23

申请号：US10330025

申请日：2002-12-27

申请人： Atsuo Isobe ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Shunpei Yamazaki ,  Mai Akiba

发明人： Atsuo Isobe ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Shunpei Yamazaki ,  Mai Akiba

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/104 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L21/02683 ,  H01L21/2022 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696

摘要： It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or off-current increase. An insulation film is formed on a substrate, and a semiconductor film is formed on the insulation film. Due to this, preferentially formed is a region in the semiconductor film to be concentratedly applied by stress during crystallization with laser light. Specifically, a stripe-formed or rectangular concavo-convex is formed on the semiconductor film. Continuous-oscillation laser light is irradiated along the striped concavo-convex or along a direction of a longer or shorter axis of rectangle.

摘要翻译： 提供一种使用能够防止在TFT沟道区域中形成晶界的激光晶体化方法的半导体器件制造系统的问题，并且进一步防止由于晶界引起的TFT迁移率的明显降低，导通电流降低或截止电流增加 。 在基板上形成绝缘膜，在绝缘膜上形成半导体膜。 由此，优选形成半导体膜中通过激光在结晶期间通过应力集中施加的区域。 具体地，在半导体膜上形成条状或矩形凹凸。 连续振荡激光沿着条纹凹凸或长轴或短轴方向照射。

公开(公告)号：US06911358B2

公开(公告)日：2005-06-28

申请号：US10330019

申请日：2002-12-27

申请人： Munehiro Azami ,  Chiho Kokubo ,  Aiko Shiga ,  Atsuo Isobe ,  Hiroshi Shibata ,  Shunpei Yamazaki

发明人： Munehiro Azami ,  Chiho Kokubo ,  Aiko Shiga ,  Atsuo Isobe ,  Hiroshi Shibata ,  Shunpei Yamazaki

IPC分类号： G02F1/1368 ,  G09F9/00 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L21/02678 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L27/1285 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78675

摘要： A method for manufacturing a semiconductor device having steps of forming an amorphous semiconductor on a substrate having an insulating surface; patterning the amorphous semiconductor to form plural first island-like semiconductors; irradiating a linearly condensed laser beam on the plural first island-like semiconductors while relatively scanning the substrate, thus crystallizing the plural first island-like semiconductors; patterning the plural first island-like semiconductors that have been crystallized to form plural second island-like semiconductors; forming plural transistors using the plural second island-like semiconductors; and forming a unit circuit using a predetermined number of the transistors, where the second island-like semiconductors used for the predetermined number of the transistors are formed from the first island-like semiconductors that are different from each other.

摘要翻译： 一种制造半导体器件的方法，具有在具有绝缘表面的衬底上形成非晶半导体的步骤; 图案化非晶半导体以形成多个第一岛状半导体; 在相对扫描基板的同时，在多个第一岛状半导体上照射线性聚集的激光束，从而使多个第一岛状半导体结晶; 图案化已经结晶以形成多个第二岛状半导体的多个第一岛状半导体; 使用多个第二岛状半导体形成多个晶体管; 并且使用预定数量的晶体管形成单位电路，其中用于预定数量的晶体管的第二岛状半导体由彼此不同的第一岛状半导体形成。

公开(公告)号：US06830994B2

公开(公告)日：2004-12-14

申请号：US10091338

申请日：2002-03-06

申请人： Toru Mitsuki ,  Takeshi Shichi ,  Shinji Maekawa ,  Hiroshi Shibata ,  Akiharu Miyanaga

发明人： Toru Mitsuki ,  Takeshi Shichi ,  Shinji Maekawa ,  Hiroshi Shibata ,  Akiharu Miyanaga

IPC分类号： H01L2120

CPC分类号： H01L29/78621 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78675

摘要： The number of grains in active regions of devices can be made uniform by making the grains of crystalline semiconductor films, obtained by thermal crystallization using a metal element, smaller. The present invention is characterized in that a semiconductor film is exposed within an atmosphere in which a gas, having as its main constituent one or a plurality of members from the group consisting of inert gas elements, nitrogen, and ammonia, is processed into a plasma, and then thermal crystallization using a metal element is performed. The concentration of crystal nuclei1 generated is thus increased, making the grain size smaller, by performing these processes. Heat treatment may also be performed, of course, after exposing the semiconductor film, to which the metal element is added, to an atmosphere in which a gas, having as its main constituent one or a plurality of members from the group consisting of inert gas elements, nitrogen, and ammonia, is processed into a plasma.

摘要翻译： 通过使通过使用金属元素的热结晶获得的结晶半导体膜的晶粒较小，可以使器件的有源区域中的晶粒数均匀。 本发明的特征在于，在由惰性气体元素，氮气和氨组成的组中作为主要成分的一个或多个成分的气体被加工成等离子体的气氛中暴露出半导体膜 ，然后进行使用金属元素的热结晶。 因此，通过进行这些处理，所产生的晶核1的浓度增加，晶粒尺寸变小。 当然也可以在将加入有金属元素的半导体膜暴露于气体中的情况下进行热处理，在该气氛中，以惰性气体为主要成分的一个或多个成分为主要成分的气体 元素，氮和氨，被加工成等离子体。

公开(公告)号：US06343249B1

公开(公告)日：2002-01-29

申请号：US09512460

申请日：2000-02-24

申请人： Hirotaka Sakai ,  Akihito Iwai ,  Kenji Suganuma ,  Hiroshi Shibata ,  Masahiro Goto ,  Minoru Okada

发明人： Hirotaka Sakai ,  Akihito Iwai ,  Kenji Suganuma ,  Hiroshi Shibata ,  Masahiro Goto ,  Minoru Okada

IPC分类号： B60Q100

CPC分类号： H04L29/06 ,  H04L12/40169 ,  H04L12/66 ,  H04L69/08 ,  H04L2012/40273

摘要： An ECU is provided with a microcomputer for performing arithmetic operation for controlling a control target by executing a program stored in a ROM and for performing the process to transmit the control data calculated by means of the arithmetic operation to a communication target. The program comprises independent program modules, that is, a program (application unit) for performing the arithmetic operation, a program (communication conversion unit) for extracting the control data to be transmitted from among the control data calculated by the application unit and for performing the process to convert the extracted control data to the communication data string corresponding to the communication protocol of the communication target, and a program (communication driver unit) for performing the process to transmit the data string according to the communication protocol.

摘要翻译： ECU具有微型计算机，用于通过执行存储在ROM中的程序来执行用于控制控制目标的算术运算，并且执行将通过算术运算计算出的控制数据发送到通信目标的处理。 该程序包括独立的程序模块，即用于执行算术运算的程序（应用单元），用于从由应用单元计算出的控制数据中提取要发送的控制数据并执行的程序（通信转换单元） 将所提取的控制数据转换为与通信对象的通信协议相对应的通信数据串的处理，以及用于执行根据通信协议发送数据串的处理的程序（通信驱动单元）。

公开(公告)号：US5613346A

公开(公告)日：1997-03-25

申请号：US635781

申请日：1996-04-22

申请人： Takahiro Yamamichi ,  Hiroshi Shibata

发明人： Takahiro Yamamichi ,  Hiroshi Shibata

IPC分类号： B65B69/00 ,  B65B35/30 ,  B65B35/50 ,  B65B43/26 ,  B67B7/16

CPC分类号： B65B69/0033

摘要： A packing material removal apparatus for removing a packing material from a package including combined articles herein and supplying the combined articles to a next process by a supplying unit, comprises a cutting unit having a suction opening for sucking the packing material to form a slack section, and a cutter for cutting the slack section, a removal unit having a pair of removal rollers which rotate in opposite directions to each other and on which the package cut by the cutting unit is put, and a drop unit having a transferring board, a shutter board for preventing the combined articles from being transferred to the supplying unit and permitting the combined articles to be sent to the supplying unit, an operation device for moving the shutter board upwardly and downwardly with respect to the transferring board, and side boards for supporting both ends of the combined articles on the transferring board.

摘要翻译： 一种用于从包括本文的组合制品的包装中取出包装材料的包装材料去除装置，并且通过供应单元将组合制品供应到下一个处理，包括具有用于吸入包装材料以形成松弛部分的抽吸开口的切割单元， 以及用于切割松弛部分的切割器，具有一对拆卸辊的拆卸单元，该对拆卸辊彼此相反的方向旋转，并且由切割单元切割的包装被放置在该拆卸滚筒上，以及具有转印板，快门 板，用于防止组合物品被转移到供应单元并允许将组合物品送到供应单元，用于相对于转印板向上和向下移动挡板的操作装置，以及用于支撑两者的侧板 转移板上组合物品的末端。

公开(公告)号：US5347485A

公开(公告)日：1994-09-13

申请号：US25250

申请日：1993-03-02

申请人： Motohisa Taguchi ,  Tatsuya Fukami ,  Kazuo Hashima ,  Yukari Toide ,  Yuji Kawano ,  Yoshio Fujii ,  Takashi Tokunaga ,  Yoshiyuki Nakaki ,  Kazuhiko Tsutsumi ,  Hiroshi Kobayashi ,  Yuzou Ohdoi ,  Shinji Tanabe ,  Hiroshi Shibata

发明人： Motohisa Taguchi ,  Tatsuya Fukami ,  Kazuo Hashima ,  Yukari Toide ,  Yuji Kawano ,  Yoshio Fujii ,  Takashi Tokunaga ,  Yoshiyuki Nakaki ,  Kazuhiko Tsutsumi ,  Hiroshi Kobayashi ,  Yuzou Ohdoi ,  Shinji Tanabe ,  Hiroshi Shibata

IPC分类号： G11C11/15 ,  G11C11/18

CPC分类号： G11C11/15 ,  G11C11/18

摘要： A magnetic thin film memory wherein the memory is composed of magnetic thin films with a layer of a higher coercive force and a layer of a lower coercive force via a nonmagnetic layer laminated repetitively, or magnetic thin films having the easy magnetization axis which lies between the perpendicular and the horizontal directions of the magnetic thin film, and information is recorded on the layer of a lower coercive force, or information is recorded by changing the direction of the magnetization by means of a magnetic field applied by two recording lines which cross the magnetic thin film, thereby to obtain a sufficient amplitude of reproduction signal even when the size of the memory is reduced.

摘要翻译： 一种磁性薄膜存储器，其中存储器由具有较高矫顽力的层的磁性薄膜和重复层叠的非磁性层的矫顽力较低的层组成，或者具有容易磁化轴的磁性薄膜位于 磁性薄膜的垂直方向和水平方向，信息被记录在矫顽力较低的层上，或通过利用穿过磁性体的两条记录线施加的磁场改变磁化方向来记录信息 从而即使当存储器的尺寸减小时也获得足够的再现信号幅度。