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公开(公告)号：US09711653B2
公开(公告)日：2017-07-18
申请号：US14409333
申请日：2014-06-20
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Meili Wang , Chunsheng Jiang , Dongfang Wang , Fengjuan Liu
IPC: H01L21/00 , H01L29/786 , H01L29/66 , H01L21/266 , H01L21/02 , H01L27/32 , H01L21/265
CPC classification number: H01L29/78696 , H01L21/02164 , H01L21/0217 , H01L21/265 , H01L21/266 , H01L27/3244 , H01L29/66742 , H01L29/66969 , H01L29/78609 , H01L29/7869
Abstract: Embodiments of the present invention provide a thin film transistor, method for fabricating the thin film transistor and display apparatus. The method includes steps of: forming an active layer pattern which has a mobility greater than a predetermined threshold from an active layer material; and performing ion implantation on the active layer pattern. The energy of a compound bond formed from the implanted ions is greater than that of a compound bond formed from ions in the active layer material, thereby reducing the chance of vacancy formation and reducing the carrier concentration. Therefore, the mobility of the active layer surface is reduced, the leakage current is reduced, the threshold voltage is adjusted to shift toward positive direction and performance of the thin film transistor is improved.
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公开(公告)号：US20170005198A1
公开(公告)日：2017-01-05
申请号：US14771526
申请日：2014-10-30
Applicant: BOE Technology Group Co., Ltd.
Inventor： Li Zhang , Meili Wang , Fengjuan Liu
IPC: H01L29/786 , H01L27/12 , H01L29/66
CPC classification number: H01L29/7869 , H01L27/1225 , H01L27/3262 , H01L29/66969 , H01L29/786
Abstract: The present disclosure provides a method for producing a thin film transistor. The method includes the steps of: forming a protective layer on an active layer of the thin film transistor and patterning the protective layer along with the active layer when the active layer is deposited; depositing a source and drain electrode layer and patterning it by a dry etching to form a source electrode and a drain electrode; and etching or passivating the protective layer located in a back channel region of the source electrode and the drain electrode. In addition, the present disclosure also discloses a thin film transistor produced by the above method, and an array substrate.
Abstract translation: 本公开提供了一种制造薄膜晶体管的方法。 该方法包括以下步骤：在薄膜晶体管的有源层上形成保护层，并且当活性层沉积时，与活性层一起构图保护层; 沉积源极和漏极电极层并通过干蚀刻对其进行构图以形成源电极和漏电极; 以及蚀刻或钝化位于源电极和漏电极的背沟道区域中的保护层。 此外，本公开还公开了通过上述方法制造的薄膜晶体管和阵列基板。
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公开(公告)号：US12268063B2
公开(公告)日：2025-04-01
申请号：US17485184
申请日：2021-09-24
Applicant: BOE Technology Group Co., Ltd.
Inventor： Fengjuan Liu , Ke Wang , Wei Liu , Tianmin Zhou
IPC: H10K59/131 , H10K50/80 , H10K59/126 , H10K102/00
Abstract: A displaying substrate and a displaying device. The displaying substrate comprises a flexible base plate; a first auxiliary electrode arranged on one side of the flexible base plate, the first auxiliary electrode being connected with a first power cord; a pixel unit arranged on a side of the flexible base plate away from a first metal layer, the pixel unit comprising: thin-film transistors arranged on the side of the flexible base plate away from the first metal layer, an insulation layer and a second auxiliary electrode, the second auxiliary electrode being connected with a second power cord, wherein the plurality of thin-film transistors comprise a drive transistor, the drive transistor has a source connected with the first auxiliary electrode and a drain connected with a first electrode of a light emitting device, a second electrode of the light emitting device is connected with the second auxiliary electrode.
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公开(公告)号：US12183409B2
公开(公告)日：2024-12-31
申请号：US17909129
申请日：2021-10-25
Applicant: BOE Technology Group Co., Ltd.
Inventor： Fengjuan Liu , Ce Ning , Wei Liu , Dini Xie , Yuhang Lu
Abstract: Provided is a shift register unit. The shift register unit includes an input circuit, a compensation control circuit, and an output circuit; wherein input circuit coupled to an input signal terminal, an input control terminal, a first power supply terminal, a reference node, and a first node; the compensation control circuit coupled to a first clock signal terminal, the reference node, and the first node; and the output circuit coupled to the first node, a second clock signal terminal, and an output terminal.
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公开(公告)号：US11985844B2
公开(公告)日：2024-05-14
申请号：US16764885
申请日：2019-12-23
Applicant: BOE Technology Group Co., Ltd.
Inventor： Hongda Sun , Youngsuk Song , Fengjuan Liu , Zhen Song
IPC: H10K50/844 , H10K50/86 , H10K59/38 , H10K71/00
CPC classification number: H10K50/844 , H10K50/865 , H10K59/38 , H10K71/00
Abstract: A display substrate panel includes a substrate and multiple OLED elements disposed on the substrate, and further includes a thin film encapsulation layer disposed on the OLED elements and a light blocking layer disposed on the thin film encapsulation layer and located between two adjacent OLED elements. A display panel includes the above display substrate panel and a cover panel which is aligned and combined into a cell with the display substrate panel, wherein the cover panel includes a color film layer, and the color film layer has a red color film, a green color film and a blue color film which are disposed to correspond to the OLED elements.
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Patent Agency Ranking
公开(公告)号：US20230329037A1
公开(公告)日：2023-10-12
申请号：US18022924
申请日：2022-03-04
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
IPC: H10K59/121 , H10K59/131 , H10K59/12
CPC classification number: H10K59/1213 , H10K59/131 , H10K59/1201 , H10K59/1216
Abstract: A display base plate, a preparation method therefor and a display panel are provided in the present disclosure. The display panel can greatly improve resolution while ensuring low power consumption. The display base plate includes a plurality of sub-pixels. Each of the plurality of sub-pixels includes a storage capacitor, a polysilicon transistor and at least one oxide transistor. The storage capacitor includes a first electrode and a second electrode oppositely arranged, and first electrode is arranged at a side of the second electrode away from the substrate. The second electrode is arranged in the same layer as a gate electrode of the polysilicon transistor. The at least one oxide transistor is arranged on a side of the first electrode away from the substrate, and the first electrode at least partially overlaps with an active layer of the at least one oxide transistor in a direction perpendicular to the substrate.
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37.发明申请公开(公告)号：US20230091604A1
公开(公告)日：2023-03-23
申请号：US17611156
申请日：2021-01-28
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jie Huang , Jiayu He , Ce Ning , Zhengliang Li , Hehe Hu , Fengjuan Liu , Nianqi Yao , Kun Zhao , Tianmin Zhou , Jiushi Wang , Zhongpeng Tian
IPC: H01L29/786 , H01L27/12 , H01L29/66
Abstract: The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include tin, and at least one of indium, gallium and zinc. The first protection layer includes praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation.
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公开(公告)号：US11563068B2
公开(公告)日：2023-01-24
申请号：US16753449
申请日：2019-08-22
Applicant: BOE Technology Group Co., Ltd.
Inventor： Hongda Sun , Youngsuk Song , Wei Liu , Jainye Zhang , Fengjuan Liu
IPC: H01L27/32 , G02F1/1362
Abstract: A substantially transparent display substrate is provided. The substantially transparent display substrate includes a base substrate; multiple insulating layers on the base substrate and in a display area of the substantially transparent display substrate; and a plurality of grooves in at least a first insulating layer of the multiple insulating layers, wherein at least one of the plurality of grooves at least partially extending into the first insulating layer. The display area includes a plurality of subpixel regions spaced apart from each other by an inter-subpixel region. A respective one of the plurality of subpixel regions includes a light emitting sub-region and a substantially transparent sub-region. At least a portion of a respective one of the plurality of grooves is about an edge of the substantially transparent sub-region of the respective one of the plurality of subpixel regions.
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公开(公告)号：US11362152B2
公开(公告)日：2022-06-14
申请号：US16768174
申请日：2019-12-17
Applicant: BOE Technology Group Co., Ltd.
Inventor： Ying Han , Wei Liu , Fengjuan Liu
Abstract: The present disclosure provides an array substrate, an electroluminescent panel and a display device, to solve the problems of more manufacturing processes and complex structures of the large-sized OLED display panel in the related art. The array substrate includes: a substrate, a plurality of light sensors on the substrate, a flat layer on the light sensor, and a connected electrode layer on the flat layer, wherein each of the light sensors includes a first electrode, a photosensitive layer and a second electrode arranged in sequence on the substrate; wherein the connected electrode layer is connected with the second electrode through a via hole penetrating through the flat layer.
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公开(公告)号：US11239259B2
公开(公告)日：2022-02-01
申请号：US16649854
申请日：2019-10-15
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Hongda Sun , Fengjuan Liu , Dini Xie , Pengfei Gu
IPC: H01L27/12 , H01L23/552 , H01L29/786
Abstract: The present disclosure provides a substrate, a manufacturing method thereof, and a transparent display device. The substrate comprising: a plurality of pixel units, at least a part of which includes a light-emitting area and a transparent area, and the light-emitting area includes a thin-film transistor; a light blocking member disposed in the light-emitting area and configured to block light that is directed to the thin-film transistor through the transparent area.
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