Abstract:
In an embodiment, light from a single mode light source may be deflected into a low index contrast (LIC) waveguide in an opto-electronic integrated circuit (OEIC) (or “opto-electronic chip”) by a 45 degree mirror. The mirror may be formed by polishing an edge of the die at a 45 degree angle and coating the polished edge with a metal layer. Light coupled into the LIC waveguide may then be transferred from the LIC waveguide to a high index contrast (HIC) waveguide by evanescent coupling.
Abstract:
A semiconductor based structure containing substantially smoothed waveguides having a rounded surface is disclosed, as well as methods of fabricating such a structure. The substantially smoothed waveguides may be formed of waveguide materials such as amorphous silicon or stoichiometric silicon nitride. The substantially smoothed waveguides are formed with an isotropic wet etch combined with sonic energy.
Abstract:
An apparatus and method for embedding a laser source on a semiconductor substrate and an optical interconnect to couple the laser source to internal components of the semiconductor substrate. An on-die waveguide is integrated on the semiconductor substrate. A package waveguide is disposed on the semiconductor substrate and evanescently coupled to the on-die waveguide. The laser source is embedded within the packaged waveguide to provide an optical signal to the on-die waveguide via the package waveguide.
Abstract:
A photosensitive device for enabling high speed detection of electromagnetic radiation. The device includes recessed electrodes for providing a generally homogeneous electric field in an active region. Carriers generated in the active region are detected using the recessed electrodes.
Abstract:
A waveguide includes a waveguide core that has a bottom surface and a top surface that defines an angle. The waveguide also includes a cladding layer adjacent to the bottom surface. The cladding layer has a thickness equal to or greater than an evanescent tail of a mode to be transmitted along the wave guide core.
Abstract:
PLC architectures and fabrication techniques for providing electrical and photonic integration of a photonic components with a semiconductor substrate. In the exemplary embodiment, the PLC is to accommodate optical input and/or output (I/O) as well as electrically couple to a microelectronic chip. One or more photonic chip or optical fiber terminal may be coupled to an optical I/O of the PLC. In embodiments the PLC includes a light modulator, photodetector and coupling regions supporting the optical I/O. Spin-on electro-optic polymer (EOP) may be utilized for the modulator while a photodefinable material is employed for a mode expander in the coupling region.
Abstract:
The waveguide in the ring and the bus waveguide in the immediate vicinity of the ring are made wider than the optimal single mode size. The bus waveguide has adiabatic tapers which serve to connect single mode portions in the bus waveguide to the wider portion of the bus waveguide to expand the mode from the narrower waveguide to the wider waveguide. Since the light is now spread out over a larger area in the wider waveguides, the scattering loss from the sidewalls is reduced and the loss is lower. This lower loss gives rise to a higher Q in the ring since the Q of the ring is directly proportional to the round trip loss.
Abstract:
A microchip includes optical layers with integrated waveguides and modulators. A continuous wave light beam coupled to incoming waveguide(s) is modulated and transmitted off-chip by outgoing waveguides coupled to optical interconnects.
Abstract:
A microchip may include an optical clocking system. The optical clocking system may include a ring resonator which multiplies the frequency of light pulses from a light source for use as optical clocking signals and distribution waveguides to distribute the optical clocking signals to different regions of the microchip.
Abstract:
An optoelectronic temperature sensor comprises a doped ferroelectric oxide thin film that exhibits a detectable change in luminescence intensity with temperature as a result of an oxide phase transition when the sensor is heated or cooled through a particular temperature range. The phase of the doped ferroelectric oxide affects the intensity of the luminescence emitted by the doped ferroelectric oxide and thereby provides a temperature dependent parameter or output. The optoelectronic temperature sensor of the present invention can comprise a rare earth or transition metal doped ferroelectric oxide thin film.